Description of field of research:

Adapting industrial CMOS technology to silicon-CMOS quantum dot qubit device fabrication is a promising road towards full-scale quantum computers. Devices currently used for successful demonstration of 1- and 2-qubit gates possess strong similarities to conventional CMOS devices, by making use of biasing gates to accumulate electrons at the Si/SiO2 interface. Understanding the influence of the electrode/gate geometry and the biasing configuration in many-electrode devices is paramount to further improvements in device design and control.

Research Area

Quantum computing

The research group is lead by Prof Andrew Dzurak and includes 8 postdoctoral staff and faculty collaborators and 11 PhD students.

This project will require the student to simulate the electrostatics of silicon quantum dot devices to capture the influence of biasing, design, cryogenic operation and real-world imperfections. The simulations will be performed with a mix of industry standard and bespoke tools to accurately describe the behaviour of the quantum dot devices.

Relevant journal articles for this project include: