Mr Matthew John Rendell
Postdoctoral Fellow

Mr Matthew John Rendell

Science
School of Physics

I am an experimental physicist in the Quantum Electronic Devices group in the School of Physics. My main area of research is hole spins in Ge and GaAs heterostructures. I am also part of the Australian Research Council Centre for Future Low-Energy Electronics Technologies (FLEET).

  • Journal articles | 2022
    Lodari M; Kong O; Rendell M; Tosato A; Sammak A; Veldhorst M; Hamilton AR; Scappucci G, 2022, 'Lightly strained germanium quantum wells with hole mobility exceeding one million', Applied Physics Letters, vol. 120, pp. 122104 - 122104, http://dx.doi.org/10.1063/5.0083161
    Journal articles | 2021
    Liles SD; Martins F; Miserev DS; Kiselev AA; Thorvaldson ID; Rendell MJ; Jin IK; Hudson FE; Veldhorst M; Itoh KM; Sushkov OP; Ladd TD; Dzurak AS; Hamilton AR, 2021, 'Electrical control of the g tensor of the first hole in a silicon MOS quantum dot', Physical Review B, vol. 104, http://dx.doi.org/10.1103/PhysRevB.104.235303
    Journal articles | 2015
    Rendell M; Klochan O; Srinivasan A; Farrer I; Ritchie DA; Hamilton AR, 2015, 'Transverse magnetic focussing of heavy holes in a (100) GaAs quantum well', Semiconductor Science and Technology, vol. 30, http://dx.doi.org/10.1088/0268-1242/30/10/102001
  • Preprints | 2022
    Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing, http://arxiv.org/abs/2204.01223v1
    Preprints | 2020
    Liles SD; Martins F; Miserev DS; Kiselev AA; Thorvaldson ID; Rendell MJ; Jin IK; Hudson FE; Veldhorst M; Itoh KM; Sushkov OP; Ladd TD; Dzurak AS; Hamilton AR, 2020, Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot