Scientia Professor Sven Rogge
Dean

Scientia Professor Sven Rogge

PhD in Physics (Stanford University, 1997)

BSc in Physics (Universität Karlsruhe, 1991)

Science
Dean's Unit, Science

Professor Sven Rogge is the Dean of the Faculty of Science at the University of New South Wales, Sydney (UNSW). Sven’s research interest is in condensed matter physics, in particular quantum electronics, at the School of Physics. Sven works on quantum computation in silicon in the ARC Centre for Quantum Computation and Communication Technology. In a team of enthusiastic researchers, they work on gaining atomistic insight into the interactions of quantum objects, like atoms and qubits, with their environment. This allows the team to manipulate quantum information and minimise decoherence. Before joining UNSW in 2011 Sven worked at the Kavli Institute for Quantum Nano Science at Delft University and Stanford University.

RESEARCH

My Research Goals

  • Control entanglement in a solid-state system, i.e. qubits
  • Study the interaction between qubits and light
  • Build and control molecular states in a solid with atomic precision

My Research in Detail

The goal of my research program is to understand the physics of qubit coupling with the environment to understand decoherence pathways and to control. The control over the electron wavefunction requires interface which lead to the loss of bulk properties of the qubit due to physical processes like the valley-orbit coupling, exchange, and many-body effects in coherent coupling. The atomistic understanding of the interaction between the environment and the qubit is essential for quantum computation since it allows the achievement of optimal coherence times and optimal robustness of the quantum gates. Optical addressing of electrons in Si is nontrivial but vastly beneficial due to the gained flexibility and unprecedented high resolution. We investigate efficient read-out and coupling schemes to open up new pathways into optical control.

Current Student Projects (PhD and Honours)

We look for enthusiastic PhD and Honours candidates for research projects. Prestigious Scholarship are available which are typically valued at $28,000 per annum with a supplement of up to $5000 per annum for first class honours or equivalent and is available for up to three-and-a-half years. The successful scholarship applicant will be expected to enrol for a PhD degree and should have an honours degree (level 1 or 2A) or equivalent, in Physics, Applied Physics, Material Science or a related subject. International applicants with a Masters degree are strongly encouraged to apply. Interested candidates should contact me to discuss possible projects and the application procedure. International applicants are very welcome! Please email an application containing a complete resume including telephone numbers, email address, and contact details of three academic referees to me. You will get a confirmation within a few days. The scholarships will remain open until filled.

Supervision Opportunities/Areas

There are always projects in the main research areas which focus on low temperature scanning-tunnelling spectroscopy, atomistic transport, and the interaction of light and matter at the atomic scale. We have a team of 15 enthusiastic researchers ranging from undergraduates to postdoctoral fellows. My group combines different research strengths and is very international. UNSW offers a first class laboratory and intellectual environment for atomic-scale electronics research.

Courses I teach

PHY3118: Quantum Physics of Solids and Devices

Professional affiliations and service positions

I am the Vice-President of the Australian Institute of Physics

Phone
+61 2 9385 5979
Location
Newton Building (2nd floor)
  • Book Chapters | 2012
    2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15
  • Journal articles | 2022
    Mikhail D; Voisin B; St Medar DD; Buchs G; Rogge S; Rachel S, 2022, 'Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation', Physical Review B, vol. 106, http://dx.doi.org/10.1103/PhysRevB.106.195408
    Journal articles | 2021
    Kobayashi T; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl HJ; Simmons MY; Rogge S, 2021, 'Engineering long spin coherence times of spin–orbit qubits in silicon', Nature Materials, vol. 20, pp. 38 - 42, http://dx.doi.org/10.1038/s41563-020-0743-3
    Journal articles | 2021
    Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2021, 'Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits', npj Quantum Information, vol. 7, http://dx.doi.org/10.1038/s41534-021-00386-2
    Journal articles | 2020
    De Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars MJ; Rogge S, 2020, 'High-resolution spectroscopy of individual erbium ions in strong magnetic fields', Physical Review B, vol. 102, http://dx.doi.org/10.1103/PhysRevB.102.155309
    Journal articles | 2020
    Everts JR; King GGG; Lambert NJ; Kocsis S; Rogge S; Longell JJ, 2020, 'Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare-earth ion spins', Physical Review B, vol. 101, http://dx.doi.org/10.1103/PhysRevB.101.214414
    Journal articles | 2020
    Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, 'Scanned Single-Electron Probe inside a Silicon Electronic Device', ACS Nano, vol. 14, pp. 9449 - 9455, http://dx.doi.org/10.1021/acsnano.0c00736
    Journal articles | 2020
    Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, vol. 11, pp. 6124, http://dx.doi.org/10.1038/s41467-020-19835-1
    Journal articles | 2019
    Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, 'Hole spin echo envelope modulations', Physical Review B, vol. 100, http://dx.doi.org/10.1103/PhysRevB.100.125402
    Journal articles | 2019
    Zhang Q; Hu G; De Boo GG; Rančić M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2019, 'Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors', Nano Letters, vol. 19, pp. 5025 - 5030, http://dx.doi.org/10.1021/acs.nanolett.9b01281
    Journal articles | 2019
    Zhang Y; Shi L; Hu D; Chen S; Xie S; Lu Y; Cao Y; Zhu Z; Jin L; Guan BO; Rogge S; Li X, 2019, 'Full-visible multifunctional aluminium metasurfaces by: In situ anisotropic thermoplasmonic laser printing', Nanoscale Horizons, vol. 4, pp. 601 - 609, http://dx.doi.org/10.1039/c9nh00003h
    Journal articles | 2018
    Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2018, 'Entanglement control and magic angles for acceptor qubits in Si', Applied Physics Letters, vol. 113, http://dx.doi.org/10.1063/1.5036521
    Journal articles | 2018
    Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, vol. 8, http://dx.doi.org/10.1103/PhysRevX.8.041032
    Journal articles | 2018
    Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, 'Gigahertz Single-Electron Pumping Mediated by Parasitic States', Nano Letters, vol. 18, pp. 4141 - 4147, http://dx.doi.org/10.1021/acs.nanolett.8b00874
    Journal articles | 2018
    Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, vol. 8, http://dx.doi.org/10.1103/PhysRevX.8.031049
    Journal articles | 2018
    Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, vol. 97, http://dx.doi.org/10.1103/PhysRevB.97.195301
    Journal articles | 2018
    van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, vol. 4, pp. eaat9199, http://dx.doi.org/10.1126/sciadv.aat9199
    Journal articles | 2017
    Agundez RR; Hill CD; Hollenberg LCL; Rogge S; Blaauboer M, 2017, 'Superadiabatic quantum state transfer in spin chains', Physical Review A, vol. 95, http://dx.doi.org/10.1103/PhysRevA.95.012317
    Journal articles | 2017
    Klymenko MV; Rogge S; Remacle F, 2017, 'Electronic states and valley-orbit coupling in linear and planar molecules formed by coupled P donors in silicon', Physical Review B, vol. 95, http://dx.doi.org/10.1103/PhysRevB.95.205301
    Journal articles | 2017
    Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, vol. 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362
    Journal articles | 2016
    House MG; Bartlett I; Pakkiam P; Koch M; Peretz E; Van Der Heijden J; Kobayashi T; Rogge S; Simmons MY, 2016, 'High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation', Physical Review Applied, vol. 6, http://dx.doi.org/10.1103/PhysRevApplied.6.044016
    Journal articles | 2016
    Salfi J; Mol JA; Culcer D; Rogge S, 2016, 'Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon', Physical Review Letters, vol. 116, http://dx.doi.org/10.1103/PhysRevLett.116.246801
    Journal articles | 2016
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, vol. 7, http://dx.doi.org/10.1038/ncomms11342
    Journal articles | 2016
    Salfi J; Tong M; Rogge S; Culcer D, 2016, 'Quantum computing with acceptor spins in silicon', Nanotechnology, vol. 27, http://dx.doi.org/10.1088/0957-4484/27/24/244001
    Journal articles | 2016
    Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2016, 'Donor wave functions in Si gauged by STM images', Physical Review B, vol. 93, http://dx.doi.org/10.1103/PhysRevB.93.045303
    Journal articles | 2016
    Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, vol. 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83
    Journal articles | 2015
    Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal', Physical Review A - Atomic, Molecular, and Optical Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevA.92.062313
    Journal articles | 2015
    Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, vol. 107, http://dx.doi.org/10.1063/1.4929827
    Journal articles | 2015
    Hill CD; Peretz E; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY; Hollenberg LCL, 2015, 'Quantum Computing: A surface code quantum computer in silicon', Science Advances, vol. 1, http://dx.doi.org/10.1126/sciadv.1500707
    Journal articles | 2015
    House MG; Kobayashi T; Weber B; Hile SJ; Watson TF; Van Der Heijden J; Rogge S; Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, vol. 6, http://dx.doi.org/10.1038/ncomms9848
    Journal articles | 2015
    Klymenko MV; Rogge S; Remacle F, 2015, 'Multivalley envelope function equations and effective potentials for phosphorus impurity in silicon', Physical Review B - Condensed Matter and Materials Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevB.92.195302
    Journal articles | 2015
    Urdampilleta M; Chatterjee A; Lo CC; Kobayashi T; Mansir J; Barraud S; Betz AC; Rogge S; Gonzalez-Zalba MF; Morton JJL, 2015, 'Charge dynamics and spin blockade in a hybrid double quantum dot in silicon', Physical Review X, vol. 5, http://dx.doi.org/10.1103/PhysRevX.5.031024
    Journal articles | 2015
    Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, vol. 91, http://dx.doi.org/10.1103/PhysRevB.91.245209
    Journal articles | 2015
    Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, vol. 27, http://dx.doi.org/10.1088/0953-8984/27/15/154207
    Journal articles | 2015
    Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, vol. 27, http://dx.doi.org/10.1088/0953-8984/27/15/154203
    Journal articles | 2014
    Rossi A; Tanttu T; Tan KY; Iisakka I; Zhao R; Chan KW; Tettamanzi GC; Rogge S; Dzurak AS; Möttönen M, 2014, 'An accurate single-electron pump based on a highly tunable silicon quantum dot', Nano Letters, vol. 14, pp. 3405 - 3411, http://dx.doi.org/10.1021/nl500927q
    Journal articles | 2014
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, vol. 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941
    Journal articles | 2014
    Tettamanzi GC; Wacquez R; Rogge S, 2014, 'Charge pumping through a single donor atom', New Journal of Physics, vol. 16, http://dx.doi.org/10.1088/1367-2630/16/6/063036
    Journal articles | 2014
    Van Der Heijden J; Salfi J; Mol JA; Verduijn J; Tettamanzi GC; Hamilton AR; Collaert N; Rogge S, 2014, 'Probing the spin states of a single acceptor atom', Nano Letters, vol. 14, pp. 1492 - 1496, http://dx.doi.org/10.1021/nl4047015
    Journal articles | 2013
    Simmons MY; Miwa JA; Mol J; Rogge S; Salfi J, 2013, 'Transport through a single donor in p-type silicon', Applied Physics Letters, vol. 103, pp. 043106, http://dx.doi.org/10.1063/1.4816439
    Journal articles | 2013
    Simmons MY; Miwa JA; Rogge S; Mol J; Salfi J, 2013, 'Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants', Physical Review B, vol. 87, pp. 245417, http://dx.doi.org/10.1103/PhysRevB.87.245417
    Journal articles | 2013
    Verduijn A; Tettamanzi G; Rogge S, 2013, 'Wave function control over a single donor atom', Nano Letters, vol. 14, pp. 1476 - 1480, http://dx.doi.org/10.1021/nl304518v
    Journal articles | 2013
    Yin CM; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, 'Optical addressing of an individual erbium ion in silicon', Nature, vol. 497, pp. 91 - 94, http://dx.doi.org/10.1038/nature12081
    Journal articles | 2013
    Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2013, 'Silicon Quantum Electronics', Reviews of Modern Physics, vol. 85, pp. 961 - 1019, http://dx.doi.org/10.1103/RevModPhys.85.961
    Journal articles | 2012
    Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn JA; Tettamanzi G; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M, 2012, 'Few electron limit of n-type metal oxide semiconductor single electron transistors', Nanotechnology, vol. 23, pp. 215204-1 - 215204-5, http://dx.doi.org/10.1088/0957-4484/23/21/215204
    Journal articles | 2012
    Tettamanzi G; Verduijn JA; Lansbergen G; Blaauboer M; Calderon M; Aquado R; Rogge S, 2012, 'Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor', Physical Review Letters, vol. 108, pp. 46803 - 046807, http://dx.doi.org/10.1103/PhysRevLett.108.046803
    Journal articles | 2011
    Lansbergen G; Rahman R; Verduijn A; Tettamanzi G; Collaert N; Biesemans S; Klimeck G; Rogge S; Hollenberg L, 2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, vol. 107, pp. 136602-1 - 136602-5, http://dx.doi.org/10.1103/PhysRevLett.107.136602
    Journal articles | 2011
    Mol J; Verduijn A; Levine RD; Remacle F; Rogge S, 2011, 'Integrated logic circuits using single-atom transistors', Proceedings of the National Academy of Sciences of the United States of America, vol. 108, pp. 13969 - 13972, http://dx.doi.org/10.1073/pnas.1109935108
    Journal articles | 2011
    Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, vol. 83, http://dx.doi.org/10.1103/PhysRevB.83.239904
    Journal articles | 2011
    Rahman R; Verduijn JA; Kharche N; Lansbergen G; Klimeck ; Hollenberg ; Rogge S, 2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, vol. 83, pp. 195323-1 - 195323-5, http://dx.doi.org/10.1103/PhysRevB.83.195323
    Journal articles | 2010
    Calderon M; Verduijn J; Lansbergen G; Tettamanzi G; Rogge S; Koiller B, 2010, 'Heterointerface effects on the charging energy of the shallow D− ground state in silicon: Role of dielectric mismatch', Physical Review - Section B - Condensed Matter, vol. 82, pp. 075317-1 - 075317-7, http://dx.doi.org/10.1103/PhysRevB.82.075317
    Journal articles | 2010
    Johnson BC; Tettamanzi G; Alves A; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, 'Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation', Applied Physics Letters, vol. 96, pp. 264102-1 - 264102-3, http://dx.doi.org/10.1063/1.3458783
    Journal articles | 2010
    Klein M; Mol JA; Verduijn J; Lansbergen G; Rogge S; Levine RD; Remacle F, 2010, 'Ternary logic implemented on a single dopant atom field effect silicon transistor', Applied Physics Letters, vol. 96, pp. 043107, http://dx.doi.org/10.1063/1.3297906
    Journal articles | 2010
    Nguyen HM; Dundar MA; Van der heijden RW; Van der drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact Mach-Zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics Express, vol. 18, pp. 6437 - 6446, http://dx.doi.org/10.1364/OE.18.006437
    Journal articles | 2010
    Tettamanzi G; Paul A; Lansbergen G; Verduijn J; Lee S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Thermionic emission as a tool to study transport in undoped nFinFETs', IEEE Electron Device Letters, vol. 31, pp. 150 - 152, http://dx.doi.org/10.1109/LED.2009.2036134
    Journal articles | 2010
    Yan Y; Mol JA; Verduijn J; Rogge S; Levine RD; Remacle F, 2010, 'Electrically addressing a molecule-like donor pair in silicon: An atomic scale cyclable full Adder logic', Journal of Physical Chemistry C, vol. 114, pp. 20380 - 20386, http://dx.doi.org/10.1021/jp103524d
    Journal articles | 2009
    Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, vol. 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314
    Journal articles | 2008
    Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, vol. 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994
    Journal articles | 2007
    Klein M; Rogge S; Remacle F; Levine RD, 2007, 'Transcending binary logic by gating three coupled quantum dots', Nano Letters, vol. 7, pp. 2795 - 2799, http://dx.doi.org/10.1021/nl071376e
    Journal articles | 2007
    Sellier H; Lansbergen G; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2007, 'Subthreshold channels at the edges of nanoscale triple-gate silicon transistors', Applied Physics Letters, vol. 90, pp. 073502-1 - 073502-3, http://dx.doi.org/10.1063/1.2476343
    Journal articles | 2006
    Craciun MF; Rogge S; den Boer M-JL; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Electronic Transport through Electron-Doped Metal Phthalocyanine Materials', Advanced Materials, vol. 18, pp. 320 - 324, http://dx.doi.org/10.1002/adma.200501268
    Journal articles | 2006
    Sellier H; Lansbergen GP; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2006, 'Transport spectroscopy of a single dopant in a gated silicon nanowire', Physical Review Letters, vol. 97, http://dx.doi.org/10.1103/PhysRevLett.97.206805
    Journal articles | 2006
    Snijders P; Rogge S; Weitering H, 2006, 'Competing periodicities in fractionally filled one-dimensional bands', Physical Review Letters, vol. 96, pp. 076801-1 - 076801-4, http://dx.doi.org/10.1103/PhysRevLett.96.076801
    Journal articles | 2005
    Craciun MF; Rogge S; Morpurgo AF, 2005, 'Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped metal-phthalocyanine compounds', Journal of the American Chemical Society, vol. 127, pp. 12210 - 12211, http://dx.doi.org/10.1021/ja054468j
    Journal articles | 2005
    de Boer R; Stassen A; Craciun MF; Mulder C; Molinari A; Rogge S; Morpurgo AF, 2005, 'Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors', Applied Physics Letters, vol. 86, pp. 262109-1 - 262109-3, http://dx.doi.org/10.1063/1.1984093
    Journal articles | 2002
    Smit G; Rogge S; Klapwijk T, 2002, 'Enhanced tunneling across nanometer-scale metal-semiconductor interfaces', Applied Physics Letters, vol. 80, pp. 2568 - 2570, http://dx.doi.org/10.1063/1.1467980
    Journal articles | 2002
    Smit G; Rogge S; Klapwijk T, 2002, 'Scaling of nano-Schottky-diodes', Applied Physics Letters, vol. 81, pp. 3852 - 3854, http://dx.doi.org/10.1063/1.1521251
    Journal articles | 2001
    Rogge S; Timmerman R; Scholte P; Geerligs L; Salemink HWM, 2001, 'Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001)', Journal of Vacuum Science and Technology B, vol. 19, pp. 659 - 665, http://dx.doi.org/10.1116/1.1372925
  • Preprints | 2021
    Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, http://dx.doi.org/10.48550/arxiv.2105.02904

2000 Fellow of the Royal Dutch Academy of Science (KNAW)

2010 ARC Future Fellow (professorial level)

2015 Distinguished Professorship (Scientia Professor) UNSW

2015 Fellow Australian Institute of Physics (FAIP)

2015 Fellow Royal Society of New South Wales (FRSN)

2016 Fellow of the American Physical Society (FAPS)