Fiacre Rougieux

Senior Lecturer

Bio: Fiacre Rougieux has a PhD from the Australian National University in the field of photovoltaics and semiconductor materials. Between 2012 and 2015, he was an ARENA Post-doctoral Fellow at the ANU where he developed high-efficiency and low-cost solar cell concepts. One of the outcomes of his research was three consecutive world efficiency records for solar cells made with Updgraded Metallurgical Grade silicon. This technology now widely is used in the industry blended with other materials. Between 2016 and 2018, he was an ARC DECRA fellow at the ANU where he explored the physics of defects in high efficiency devices and successfully developed a wide range of processes to remove defects in solar cells and improve their efficiency. Typical process: oxygen dissolution, tabula rasa, vacancy-defect dissociation. Example of outcomes: 20% increase in relative efficiency. Fiacre is currently a Senior Lecturer at UNSW. He has published and co-authored more than 70 papers. His research interests include solar grade silicon, growth-related defects and advanced solar cells processes. 

Our goal is to engineer the materials and devices required to accelerate our transition to a decarbonised and circular economy. Our work lies at the intersection of materials science, nanotechnology, solid-state chemistry, solar cells and semiconductor physics. As a result of intensified research activities, our international research network has grown significantly and we collaborate with many the leading photovoltaics laboratories across the globe, including student research exchanges. We also welcome international and domestic visitors in our group. Some of our recent research successes include the development of advanced characterisation techniques to measure dilute defects in ultra-high efficiency solar cells, the successful development of novel defect imaging techniques for defects in semiconductors, the creation of advanced defect analysis capability (Deep Level Transient Spectroscopy) at UNSW and the development of new recombination analysis theoretical framework and advanced measurement methods to link strain and recombination activity in photovoltaic materials.

We are currently looking for students enthusiastic about producing technologies to mitigate the negative impacts of defects on high-efficiency solar cells.  The student would contribute to the development of novel solar cell processes to enable defect-free silicon and the development of new characterization techniques to image defects in silicon wafers allowing high efficiency solar cells to overcome their current limits and reach their true potential.

For a detailed description of all our topics please email us directly.

We also welcome students to suggest their own research project.

 

Course:

Solar Cells SOLA3507

Applied PV SOLA2540

Journal articles
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Zhu Y; Rougieux F; Grant NE; De Guzman JAT; Murphy JD; Markevich VP; Coletti G; Peaker AR; Hameiri Z, 2021, 'Electrical characterization of thermally activated defects in n-type float-zone silicon', IEEE Journal of Photovoltaics, vol. 11, pp. 26 - 35, http://dx.doi.org/10.1109/jphotov.2020.3031382
2021
Basnet R; Sio H; Siriwardhana M; Rougieux FE; Macdonald D, 2021, 'Ring-Like Defect Formation in N-Type Czochralski-Grown Silicon Wafers during Thermal Donor Formation', Physica Status Solidi (A) Applications and Materials Science, vol. 218, http://dx.doi.org/10.1002/pssa.202000587
2021
Sun C; Zhu Y; Juhl M; Yang W; Rougieux F; Hameiri Z; Macdonald D, 2021, 'The role of charge and recombination-enhanced defect reaction effects in the dissociation of FeB pairs in p-type silicon under carrier injection', Physica Status Solidi - Rapid Research Letters, http://dx.doi.org/10.1002/pssr.202000520
2021
Siriwardhana M; Zhu Y; Hameiri Z; Macdonald D; Rougieux F, 2021, 'Photoconductance determination of carrier capture cross sections of slow traps in silicon through variable pulse filling', IEEE Journal of Photovoltaics, http://dx.doi.org/10.1109/JPHOTOV.2020.3043835
2021
Jafari S; Zhu Y; Rougieux F; De Guzman JAT; Markevich VP; Peaker AR; Hameiri Z, 2021, 'On the correlation between light-induced degradation and minority carrier traps in boron-doped Czochralski silicon', ACS Applied Materials & Interfaces, http://dx.doi.org/10.1021/acsami.0c17549
2021
Rougieux FE; Sun C; Juhl M, 2020, 'Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results', Solar Energy Materials and Solar Cells, vol. 210, http://dx.doi.org/10.1016/j.solmat.2020.110481
2020
Chen D; Hamer P; Kim M; Chan C; Ciesla nee Wenham A; Rougieux F; Zhang Y; Abbott M; Hallam B, 2020, 'Hydrogen-induced degradation: Explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon', Solar Energy Materials and Solar Cells, vol. 207, http://dx.doi.org/10.1016/j.solmat.2019.110353
2020
Basnet R; Phang SP; Sun C; Rougieux FE; MacDonald D, 2020, 'Onset of ring defects in n-type Czochralski-grown silicon wafers', Journal of Applied Physics, vol. 127, http://dx.doi.org/10.1063/5.0005899
2020
Basnet R; Weigand W; Yu ZJ; Sun C; Phang SP; Sio HC; Rougieux FE; Holman ZC; Macdonald D, 2020, 'Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells', Solar Energy Materials and Solar Cells, vol. 205, http://dx.doi.org/10.1016/j.solmat.2019.110287
2020
Raj V; Rougieux F; Fu L; Tan HH; Jagadish C, 2020, 'Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts', IEEE Journal of Photovoltaics, vol. 10, pp. 1657 - 1666, http://dx.doi.org/10.1109/JPHOTOV.2019.2961615
2020
Sun C; Chen D; Rougieux F; basnet R; Hallam B; macdonald D, 2019, 'Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon', Solar Energy Materials and Solar Cells, http://dx.doi.org/10.1016/j.solmat.2019.03.016
2019
Rougieux FE; Kwapil W; Heinz F; Siriwardhana M; Schubert MC, 2019, 'Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption', Scientific Reports, vol. 9, http://dx.doi.org/10.1038/s41598-019-49804-8
2019
Raj V; Dos Santos TS; Rougieux F; Vora K; Lysevych M; Fu L; Mokkapati S; Tan HH; Jagadish C, 2018, 'Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer', Journal of Physics D: Applied Physics, vol. 51, http://dx.doi.org/10.1088/1361-6463/aad7e3
2018
Rougieux FE; Sun C; Macdonald D, 2018, 'Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review', Solar Energy Materials and Solar Cells, vol. 187, pp. 263 - 272, http://dx.doi.org/10.1016/j.solmat.2018.07.029
2018
Basnet R; Rougieux FE; Sun C; Phang SP; Samundsett C; Einhaus R; Degoulange J; Macdonald D, 2018, 'Methods to improve bulk lifetime in n-type czochralski-grown upgraded metallurgical-grade silicon wafers', IEEE Journal of Photovoltaics, vol. 8, pp. 990 - 996, http://dx.doi.org/10.1109/JPHOTOV.2018.2834944
2018
Basnet R; Sun C; Wu H; Nguyen HT; Rougieux FE; Macdonald D, 2018, 'Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman', Journal of Applied Physics, vol. 124, http://dx.doi.org/10.1063/1.5057724
2018
Rougieux FE; Nguyen HT; Macdonald DH; Mitchell B; Falster R, 2017, 'Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon', IEEE Journal of Photovoltaics, vol. 7, pp. 735 - 740, http://dx.doi.org/10.1109/JPHOTOV.2017.2678840
2017
Shen D; Sun C; Zheng P; Macdonald D; Rougieux F, 2017, 'Carrier induced degradation in compensated n-type silicon solar cells: Impact of light-intensity, forward bias voltage, and temperature on the reaction kinetics', Japanese Journal of Applied Physics, vol. 56, http://dx.doi.org/10.7567/JJAP.56.08MB23
2017
Sun C; Nguyen HT; Sio HC; Rougieux FE; Macdonald D, 2017, 'Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence', IEEE Journal of Photovoltaics, vol. 7, pp. 988 - 995, http://dx.doi.org/10.1109/JPHOTOV.2017.2705420
2017
Sun C; Nguyen HT; Rougieux FE; Macdonald D, 2017, 'Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging', Journal of Crystal Growth, vol. 460, pp. 98 - 104, http://dx.doi.org/10.1016/j.jcrysgro.2016.12.084
2017
Zheng P; Rougieux FE; Zhang X; Degoulange J; Einhaus R; Rivat P; MacDonald DH, 2017, '21.1% UMG Silicon Solar Cells', IEEE Journal of Photovoltaics, vol. 7, pp. 58 - 61, http://dx.doi.org/10.1109/JPHOTOV.2016.2616192
2017
Nguyen HT; Rougieux FE; Yan D; Wan Y; Mokkapati S; De Nicolas SM; Seif JP; De Wolf S; MacDonald D, 2016, 'Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy', Solar Energy Materials and Solar Cells, vol. 145, pp. 403 - 411, http://dx.doi.org/10.1016/j.solmat.2015.11.006
2016
Grant NE; Markevich VP; Mullins J; Peaker AR; Rougieux F; Macdonald D, 2016, 'Thermal activation and deactivation of grown-in defects limiting the lifetime of float-zone silicon', Physica Status Solidi - Rapid Research Letters, vol. 10, pp. 443 - 447, http://dx.doi.org/10.1002/pssr.201600080
2016
Sun C; Rougieux FE; Degoulange J; Einhaus R; Macdonald D, 2016, 'Reassessment of the recombination properties of aluminium–oxygen complexes in n- and p-type Czochralski-grown silicon', Physica Status Solidi (B) Basic Research, vol. 253, pp. 2079 - 2084, http://dx.doi.org/10.1002/pssb.201600363
2016
Grant NE; Markevich VP; Mullins J; Peaker AR; Rougieux F; Macdonald D; Murphy JD, 2016, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', Physica Status Solidi (A) Applications and Materials Science, vol. 213, pp. 2844 - 2849, http://dx.doi.org/10.1002/pssa.201600360
2016
Zheng P; Rougieux FE; Samundsett C; Yang X; Wan Y; Degoulange J; Einhaus R; Rivat P; Macdonald D, 2016, 'Upgraded metallurgical-grade silicon solar cells with efficiency above 20%', Applied Physics Letters, vol. 108, http://dx.doi.org/10.1063/1.4944788
2016
Rougieux F; Samundsett C; Fong KC; Fell A; Zheng P; MacDonald D; Degoulange J; Einhaus R; Forster M, 2016, 'High efficiency UMG silicon solar cells: Impact of compensation on cell parameters', Progress in Photovoltaics: Research and Applications, vol. 24, pp. 725 - 734, http://dx.doi.org/10.1002/pip.2729
2016
Nguyen HT; Rougieux FE; Baker-Finch SC; MacDonald D, 2015, 'Impact of carrier profile and rear-side reflection on photoluminescence spectra in planar crystalline silicon wafers at different temperatures', IEEE Journal of Photovoltaics, vol. 5, pp. 77 - 81, http://dx.doi.org/10.1109/JPHOTOV.2014.2359737
2015
Nguyen HT; Rougieux FE; Wang F; Tan H; Macdonald D, 2015, 'Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon', IEEE Journal of Photovoltaics, vol. 5, pp. 799 - 804, http://dx.doi.org/10.1109/JPHOTOV.2015.2407158
2015
Zheng P; Rougieux FE; Grant NE; Macdonald D, 2015, 'Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon', IEEE Journal of Photovoltaics, vol. 5, pp. 183 - 188, http://dx.doi.org/10.1109/JPHOTOV.2014.2366687
2015
Grant NE; Rougieux FE; MacDonald D; Bullock J; Wan Y, 2015, 'Grown-in defects limiting the bulk lifetime of p -type float-zone silicon wafers', Journal of Applied Physics, vol. 117, http://dx.doi.org/10.1063/1.4907804
2015
Rougieux FE; Grant NE; Barugkin C; MacDonald D; Murphy JD, 2015, 'Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon', IEEE Journal of Photovoltaics, vol. 5, pp. 495 - 498, http://dx.doi.org/10.1109/JPHOTOV.2014.2367912
2015
Sun C; Liu AY; Phang SP; Rougieux FE; MacDonald D, 2015, 'Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon', Journal of Applied Physics, vol. 118, http://dx.doi.org/10.1063/1.4929757
2015
Sun C; Rougieux FE; Macdonald D, 2015, 'A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon', Journal of Applied Physics, vol. 117, http://dx.doi.org/10.1063/1.4906465
2015
Nguyen HT; Rougieux FE; Mitchell B; Macdonald D, 2014, 'Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence', Journal of Applied Physics, vol. 115, http://dx.doi.org/10.1063/1.4862912
2014
Sun C; Rougieux FE; Macdonald D, 2014, 'Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon', Journal of Applied Physics, vol. 115, http://dx.doi.org/10.1063/1.4881497
2014
Hameiri Z; Rougieux F; Sinton R; Trupke T, 2014, 'Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements', Applied Physics Letters, vol. 104, pp. 073506, http://dx.doi.org/10.1063/1.4865804
2014
Zheng P; Rougieux FE; MacDonald D; Cuevas A, 2014, 'Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level', IEEE Journal of Photovoltaics, vol. 4, pp. 560 - 565, http://dx.doi.org/10.1109/JPHOTOV.2013.2294755
2014
Rougieux FE; MacDonald D, 2014, 'Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density', Applied Physics Letters, vol. 104, http://dx.doi.org/10.1063/1.4870002
2014
Forster M; Wagner P; Degoulange J; Einhaus R; Galbiati G; Rougieux FE; Cuevas A; Fourmond E, 2014, 'Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells', Solar Energy Materials and Solar Cells, vol. 120, pp. 390 - 395, http://dx.doi.org/10.1016/j.solmat.2013.06.014
2014
Lim SY; Rougieux FE; Macdonald D, 2013, 'Boron-oxygen defect imaging in p-type Czochralski silicon', Applied Physics Letters, vol. 103, http://dx.doi.org/10.1063/1.4819096
2013
Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2013, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', IEEE Journal of Photovoltaics, vol. 3, pp. 108 - 113, http://dx.doi.org/10.1109/JPHOTOV.2012.2210032
2013
Rougieux FE; Grant NE; Macdonald D, 2013, 'Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers', Physica Status Solidi - Rapid Research Letters, vol. 7, pp. 616 - 618, http://dx.doi.org/10.1002/pssr.201308053
2013
Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2013, 'Incomplete Ionization and Carrier Mobility in Compensated $p$-Type and $n$-Type Silicon', 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, pp. 1 - 6
2013
Forster M; Fourmond E; Rougieux FE; Cuevas A; Gotoh R; Fujiwara K; Uda S; Lemiti M, 2012, 'Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron', Applied Physics Letters, vol. 100, http://dx.doi.org/10.1063/1.3680205
2012
Forster M; Cuevas A; Fourmond E; Rougieux FE; Lemiti M, 2012, 'Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon', Journal of Applied Physics, vol. 111, http://dx.doi.org/10.1063/1.3686151
2012
MacDonald D; Phang SP; Rougieux FE; Lim SY; Paterson D; Howard DL; De Jonge MD; Ryan CG, 2012, 'Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering', Semiconductor Science and Technology, vol. 27, http://dx.doi.org/10.1088/0268-1242/27/12/125016
2012
Rougieux FE; Zheng P; Thiboust M; Tan J; Grant NE; MacDonald DH; Cuevas A, 2012, 'A contactless method for determining the carrier mobility sum in silicon wafers', IEEE Journal of Photovoltaics, vol. 2, pp. 41 - 46, http://dx.doi.org/10.1109/JPHOTOV.2011.2175705
2012
Tan J; MacDonald D; Rougieux F; Cuevas A, 2011, 'Accurate measurement of the formation rate of iron-boron pairs in silicon', Semiconductor Science and Technology, vol. 26, http://dx.doi.org/10.1088/0268-1242/26/5/055019
2011
Rougieux FE; Forster M; MacDonald D; Cuevas A; Lim B; Schmidt J, 2011, 'Recombination activity and impact of the boron-oxygen-related defect in compensated N-type silicon', IEEE Journal of Photovoltaics, vol. 1, pp. 54 - 58, http://dx.doi.org/10.1109/JPHOTOV.2011.2165698
2011
Rougieux FE; Lim B; Schmidt J; Forster M; MacDonald D; Cuevas A, 2011, 'Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon', Journal of Applied Physics, vol. 110, http://dx.doi.org/10.1063/1.3633492
2011
MacDonald D; Rougieux F; Mansoulie Y; Tan J; Paterson D; Howard DL; De Jonge MD; Ryan CG, 2010, 'Scanning X-ray fluorescence microspectroscopy of metallic impurities in solar-grade silicon', Physica Status Solidi (A) Applications and Materials Science, vol. 207, pp. 1807 - 1810, http://dx.doi.org/10.1002/pssa.201026137
2010
Rougieux FE; MacDonald D; Cuevas A; Ruffell S; Schmidt J; Lim B; Knights AP, 2010, 'Electron and hole mobility reduction and Hall factor in phosphorus-compensated p -type silicon', Journal of Applied Physics, vol. 108, http://dx.doi.org/10.1063/1.3456076
2010
Rougieux FE; MacDonald D; McIntosh KR; Cuevas A, 2010, 'Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon', Semiconductor Science and Technology, vol. 25, http://dx.doi.org/10.1088/0268-1242/25/5/055009
2010
MacDonald D; Rougieux F; Cuevas A; Lim B; Schmidt J; Di Sabatino M; Geerligs LJ, 2009, 'Light-induced boron-oxygen defect generation in compensated p -type Czochralski silicon', Journal of Applied Physics, vol. 105, http://dx.doi.org/10.1063/1.3121208
2009
Conference Papers
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Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2021, 'Electronic Properties of the Boron-oxygen Defect Precursor in Silicon', in 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), IEEE, presented at 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 20 June 2021 - 25 June 2021, http://dx.doi.org/10.1109/pvsc43889.2021.9519027
2021
Jafari S; Zhu Y; Rougieux F; De Guzman JAT; Markevich VP; Peaker AR; Hameiri Z, 2020, 'Boron-oxygen related light-induced degradation of Si solar cells: Transformation between minority carrier trapping and recombination active centers', Virtual, presented at 47th IEEE Photovoltaics Specialists Conference, Virtual, 15 June 2020 - 21 August 2020
2020
Jafari S; Zhu Y; Rougieux F; De Guzman JA; Markevich V; Peaker A; Hameiri Z, 2020, 'Boron-oxygen-related traps in Czochralski grown silicon', Online, presented at Asia Pacific Solar Research Conference, Online, 30 November 2020
2020
Siriwardhana M; Rougieux FE; MacDonald D, 2020, 'Defect luminescence from thermal donors in silicon: Impact of dopant type and thermal donor concentration', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2652 - 2654, http://dx.doi.org/10.1109/PVSC45281.2020.9300685
2020
Rougieux F; Sun C; Juhl M, 2020, 'The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2522 - 2524, http://dx.doi.org/10.1109/PVSC45281.2020.9300431
2020
Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Canberra, presented at Asia-Pacific Solar Research Conference, Canberra, 03 December 2019
2019
Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 09 September 2019 - 13 September 2019
2019
Zhu Y; Rougieux F; Grant N; Mullins J; Ann De Guzman J; Murphy J; Markevich V; Coletti G; Peaker A; Hameiri Z, 2019, 'New insights into the thermally activated defects in n-type float-zone silicon', Leuven, presented at 9th International Conference on Silicon Photovoltaics, Leuven, 08 April 2019 - 10 April 2019
2019
Basnet R; Weigand W; Yu ZJ; Sun C; Phang SP; Rougieux FE; Einhaus R; Degoulange J; Holman Z; Macdonald D, 2018, 'Impact of Tabula Rasa and Phosphorus Diffusion Gettering on 21% Heterojunction Solar Cells Based on n-Type Czochralski-Grown Upgrade Metallurgical-Grade Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 1687 - 1691, http://dx.doi.org/10.1109/PVSC.2018.8548218
2018
Rougieux FE; Sun C; Zhu Y; MacDonald DH, 2018, 'Accurate defect recombination parameters: What are the limitations of current analyses?', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 2520 - 2523, http://dx.doi.org/10.1109/PVSC.2018.8547585
2018
Juhl MK; Heinz FD; Coletti G; MacDonald D; Rougieux FE; Schindle F; Niewelt T; Schubert MC, 2018, 'An Open Source Based Repository for Defects in Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 328 - 332, http://dx.doi.org/10.1109/PVSC.2018.8547621
2018
Juhl MK; Heinz FD; Coletti G; Macdonald D; Rougieux FE; Schindle F; Niewelt T; Schubert MC, 2018, 'An Open Source Based Repository For Defects in Silicon', in 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), IEEE, Waikoloa, HI, pp. 0328 - 0332, presented at 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC, Waikoloa, HI, 10 June 2018 - 15 June 2018, http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000469200400077&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
2018
Siriwardhana M; Macdonald D; Heinz FD; Rougieux FE, 2018, 'Slow minority carrier trapping and de-trapping in Czochralski silicon: Influence of thermal donors and the doping density', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3312 - 3314, http://dx.doi.org/10.1109/PVSC.2018.8547946
2018
Rougieux F; Nguyen H; Maconald D; Mitchell B; Falster R, 2017, 'Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime', in Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime, WIP-Renewable Energies, Munich, Germany, Amsterdam, presented at 35th European Photovoltaic Solar Energy Conference, Amsterdam, 24 September 2017 - 28 September 2017
2017
Grant NE; Rougieux FE; Macdonald D, 2016, 'Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers', in Solid State Phenomena, pp. 120 - 125, http://dx.doi.org/10.4028/www.scientific.net/SSP.242.120
2016
Shen D; Sun C; Zheng P; Macdonald D; Rougieux F, 2016, 'Carrier induced degradation in compensated n-type silicon solar cells', in Carrier induced degradation in compensated n-type silicon solar cells, 26th Photovoltaic Science and Engineering Conference, Singapore, presented at 26th Photovoltaic Science and Engineering Conference, Singapore, 24 October 2016 - 28 October 2016
2016
Sun C; Nguyen HT; Rougieux FE; Macdonald D, 2016, 'Characterization of Cu and Ni Precipitates in n- and p-type Czochralski-grown Silicon by Photoluminescence', in Energy Procedia, pp. 880 - 885, http://dx.doi.org/10.1016/j.egypro.2016.07.097
2016
Zheng P; Rougieux FE; Samundsett C; Yang X; Wan Y; Degoulange J; Einhaus R; Rivat P; MacDonald D, 2016, 'Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell', in Energy Procedia, pp. 434 - 442, http://dx.doi.org/10.1016/j.egypro.2016.07.124
2016
Macdonald D; Liu A; Nguyen HT; Lim SY; Rougieux F, 2015, 'Physical Modelling of Luminescence Spectra from Crystalline Silicon', in Physical Modelling of Luminescence Spectra from Crystalline Silicon, WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 31st European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 14 September 2015 - 18 September 2015
2015
Nguyen HT; Rougieux FE; Wang F; Macdonald D, 2015, 'Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon', in Energy Procedia, pp. 619 - 625, http://dx.doi.org/10.1016/j.egypro.2015.07.089
2015
Sun C; Liu A; Rougieux FE; MacDonald D, 2015, 'Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon', in Energy Procedia, pp. 646 - 650, http://dx.doi.org/10.1016/j.egypro.2015.07.092
2015
Rougieux FE; Grant NE; Macdonald D; Murphy JD, 2015, 'Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?', in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, http://dx.doi.org/10.1109/PVSC.2015.7355687
2015
Rougieux FE; Grant NE; Macdonald D, 2014, 'Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers', in Energy Procedia, pp. 81 - 84, http://dx.doi.org/10.1016/j.egypro.2014.12.346
2014
Grant N; Markevich VP; Mullins J; Peaker A; Rougieux FIACRE; Macdonald D; Murphy JD, 2014, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', in Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon, European Materials Research Society Spring Meeting, Lille, presented at European Materials Research Society Spring Meeting, Lille, 26 May 2014 - 28 May 2014
2014
Nguyen HT; Rougieux FE; Baker-Finch S; Macdonald D, 2014, 'Temperature Dependence of Band-Band Absorption and Radiative Re-combination in Crystalline Silicon from Spectral Photoluminescence', in Temperature Dependence of Band-Band Absorption and Radiative Re-combination in Crystalline Silicon from Spectral Photoluminescence, 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, Denver, presented at 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, Denver, 08 June 2014 - 13 June 2014
2014
Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level: Extension to p-type Silicon', in 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), IEEE, Denver, CO, pp. 125 - 130, presented at 40th IEEE Photovoltaic Specialists Conference (PVSC), Denver, CO, 08 June 2014 - 13 June 2014, http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000366638900029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
2014
Macdonald D; Zheng P; Rougieux F, 2014, 'Limiting defects in high-lifetime n-type silicon wafers', in Limiting defects in high-lifetime n-type silicon wafers, 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, presented at 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, 27 July 2014 - 30 July 2014
2014
Grant NE; Rougieux FE; Macdonald D; Bullock J; Wan Y, 2014, 'Recombination active defects limiting the lifetime of float-zone silicon', in Recombination active defects limiting the lifetime of float-zone silicon, 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, presented at 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, 27 July 2014 - 30 July 2014
2014
Rougieux F; Samundsett C; Zheng P; Fong K; Macdonald D, 2014, 'Towards high efficiency UMG silicon solar cells', in Towards high efficiency UMG silicon solar cells, 24th Photovoltaic Science and Engineering Conference, Kyoto, Japan,, Kyoto, presented at 24th Photovoltaic Science and Engineering Conference, Kyoto, Japan,, Kyoto, 23 October 2014 - 27 October 2014
2014
Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon', in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, pp. 129 - 134, http://dx.doi.org/10.1109/PVSC.2014.6925391
2014
Lim S; Rougieux FE; Macdonald D, 2013, 'Boron-oxygen defect imaging in p-type Czochralskisilicon', in Boron-oxygen defect imaging in p-type Czochralskisilicon, 23rdWorkshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, Breckenridge, presented at 23rdWorkshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, Breckenridge, 28 July 2013 - 31 July 2013
2013
Grant NE; McIntosh KR; Tan J; Rougieux FE; Wan Y; Barugkin C, 2013, 'Light Enhanced Hydrofluoric Acid Passivation for Evaluating Silicon Bulk Lifetimes', in Light Enhanced Hydrofluoric Acid Passivation for Evaluating Silicon Bulk Lifetimes, 28th European Photovoltaic Solar Energy Conference, Paris, France, Paris, presented at 28th European Photovoltaic Solar Energy Conference, Paris, France, Paris, 30 September 2013 - 04 October 2013
2013
Rougieux F; Phang SP; Shalav A; Lim B; Macdonald D, 2012, 'Acceptor-related metastable defects in compensated n-type silicon', in Acceptor-related metastable defects in compensated n-type silicon, 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, presented at 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, 05 November 2012 - 09 November 2012
2012
Rougieux F; Forster M; Macdonald D; Cuevas A, 2012, 'Impact of minority-impurity scattering on the carrier mobility in compensated silicon', in Impact of minority-impurity scattering on the carrier mobility in compensated silicon, 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, presented at 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, 05 November 2012 - 09 November 2012
2012
Cuevas A; Forster M; Rougieux F; Macdonald D, 2012, 'Compensation engineering for silicon solar cells', in Energy Procedia, pp. 67 - 77, http://dx.doi.org/10.1016/j.egypro.2012.02.008
2012
Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2012, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', in 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, IEEE, presented at 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 03 June 2012 - 08 June 2012, http://dx.doi.org/10.1109/pvsc-vol2.2013.6656739
2012
Rougieux FE; MacDonald D; Cuevas A, 2011, 'Transport properties of p-type compensated silicon at room temperature', in Progress in Photovoltaics: Research and Applications, pp. 787 - 793, http://dx.doi.org/10.1002/pip.1036
2011
Rougieux F; Thiboust M; Zheng P; Tan J; Grant N; Macdonald D; Cuevas A, 2011, 'A contactless method for determining the carrier mobility sum in silicon wafers for solar cells', in A contactless method for determining the carrier mobility sum in silicon wafers for solar cells, 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, presented at 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, 19 June 2011 - 24 June 2011
2011
Rougieux F, 2011, 'Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon', in Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon, 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, presented at 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, 19 June 2011 - 24 June 2011
2011
Rougieux FE; Thiboust M; Grant N; Tan J; Macdonald D; Cuevas A, 2011, 'Contactless determination of the injection dependent carrier mobility sum in silicon', in 2011 37th IEEE Photovoltaic Specialists Conference, IEEE, presented at 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 19 June 2011 - 24 June 2011, http://dx.doi.org/10.1109/pvsc.2011.6186558
2011
Rougieux FE; Macdonald D; Cuevas A; Lim B; Schmidt J, 2011, 'Formation kinetics and extent of the boron oxygen defect in compensated n-type silicon', in 2011 37th IEEE Photovoltaic Specialists Conference, IEEE, presented at 2011 37th IEEE Photovoltaic Specialists Conference (PVSC 2011), 19 June 2011 - 24 June 2011, http://dx.doi.org/10.1109/pvsc.2011.6186682
2011
Lim B; Rougieux F; MacDonald D; Bothe K; Schmidt J, 2010, 'Generation and annihilation of boron-oxygen-related recombination centers in compensated p - And n -type silicon', in Journal of Applied Physics, http://dx.doi.org/10.1063/1.3511741
2010
Rougieux F; Macdonald D; Cuevas A; Ruffel S; Schmidt J; Lim B, 2010, 'Electron and hole mobility reduction and Hall Factor in compensated p-type silicon', in Electron and hole mobility reduction and Hall Factor in compensated p-type silicon, WIP-Renewable Energies, Munich, Germany, Valenci, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valenci, 06 September 2010 - 10 September 2010
2010
Tan J; Macdonald D; Rougieux F; Cuevas A, 2010, 'revised equation for the formation rate of iron-boron pairs in silicon', in revised equation for the formation rate of iron-boron pairs in silicon, WIP-Renewable Energies, Munich, Germany, Valencia, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valencia, 06 September 2010 - 10 September 2010
2010
Lim B; Liu A; Rougieux F; Macdonald D; Bothe K; Schmidt J, 2010, 'Boron-Oxygen-Related Recombination Centers in Compensated Silicon', in Boron-Oxygen-Related Recombination Centers in Compensated Silicon, WIP-Renewable Energies, Munich, Germany, Valencia, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valencia, 06 September 2010 - 10 September 2010
2010
Rougieux F; Macdonald D; McIntosh K; Cuevas A, 2009, 'Oxidation-induced inversion layer in compensated p-type silicon', in Oxidation-induced inversion layer in compensated p-type silicon, WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 21 September 2009 - 25 September 2009
2009
Macdonald D; Rougieux F; Cuevas A; Lim B; Schmidt J; Di Sabatino M; Geerligs LJ, 2009, 'Boron-oxygen defects in compensated p-type Czochralski silicon', in Boron-oxygen defects in compensated p-type Czochralski silicon, WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 21 September 2009 - 25 September 2009
2009
Conference Presentations
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Chen D; Hamer P; Kim M; Mullins J; Sen C; Khan M; Oshima T; Abe H; Liu S; Ciesla A; Chan C; Chen R; Rougieux F; Zhou Z; Wright B; Varshney U; Vicari Stefani B; Soeriyadi A; Vargas Castrillon C; Samadi A; Hameiri Z; zhang X; Jin H; Qi W; Abbott M; Chong C; Peaker A; Hallam B, 2019, 'Will LeTID remain a commercial problem? Evaluating the solutions and a possible root cause. (LeTID仍是一个商业难题吗?根源分析和问题解决)', presented at 18th Issue PV WE CLASS-Crystalline Silicon Advanced Technology and Materials Forum, Wuxi, China, 24 April 2019 - 24 May 2019
2019
Ciesla A; Chen R; Rougieux F; Hallam B; Chan C; Chen D; Chong C; Abbott M; Wenham S, 2019, 'Hydrogen Charge States & Recombination Activity in PV Silicon', presented at 18th Conference - Gettering and Defect Engineering in Semiconductor Technology - GADEST, Zeuthen, Germany, 22 September 2019 - 27 September 2019
2019
Rougieux F; Grant N; Macdonald D; Murphy J, 2014, 'Nature of some recombination active defect in CZ and FZ n-type silicon for high efficiency solar cells', presented at European Materials Research Society Spring Meeting, Lille, France,, 26 April 2014 - 30 April 2014
2014
Rougieux F; Grant NE; Macdonald D, 2013, 'Multi-millisecond n-type Si wafers for high efficiency silicon solar cells: spatial homogeneity and defect engineering', presented at 3rdnPVWorkshop,Chambery, France,, 22 April 2013 - 23 April 2013
2013
Conference Posters
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Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 09 September 2019 - 13 September 2019
2019
Chen D; Hamer P; Ciesla A; Chan C; Chen R; Rougieux F; Liu S; Kim M; Samadi A; Wright B; Vargas C; Zhang X; Hameiri Z; Hao J; Wenham S; Abbott M; Hallam B, 2019, 'Hydrogen-Induced Degradation: An explanation of Light-and Elevated Temperature-Induced Degradation Mechanisms in n-and p-type Silicon', Leuven, Belgium, presented at 9thInternational Conference on Crystalline Silicon Photovoltaics 2019, Leuven, Belgium, 08 April 2019
2019

Publications and grants:

Take a look at my publication and citation record at Google Scholar or ORCIDID.

I have a been awarded more than 10 grants as first (two personal fellowships) and/or partner investigators in the past 5 years.