Miss Danielle Holmes

Miss Danielle Holmes

Research Associate
Engineering
Electrical Engineering and Telecommunications

Danielle Holmes is a Postdoctoral Researcher in the School of Electrical Engineering and Telecommunications, in the Faculty of Engineering at UNSW Sydney. She is pursuing the realisation of scalable quantum computers through ion implanted donor spin qubits in silicon, with a focus on high nuclear spin qubits, deterministic implantation using single ion detectors and the isotopic enrichment of silicon to provide a spin-free environment for donor qubits. During her PhD she researched donor activation and isotopic enrichment of silicon via ion implantation for quantum computing and was awarded best PhD completion talk in the School of Physics, University of Melbourne. Danielle received her MSci and BA from the University of Cambridge in Physical Natural Sciences. 

  • Journal articles | 2024
    Holmes D; Wilhelm B; Jakob AM; Yu X; Hudson FE; Itoh KM; Dzurak AS; Jamieson DN; Morello A, 2024, 'Improved Placement Precision of Donor Spin Qubits in Silicon using Molecule Ion Implantation', Advanced Quantum Technologies, 7, http://dx.doi.org/10.1002/qute.202300316
    Journal articles | 2024
    Jakob AM; Robson SG; Firgau HR; Mourik V; Schmitt V; Holmes D; Posselt M; Mayes ELH; Spemann D; McCallum JC; Morello A; Jamieson DN, 2024, 'Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon', Advanced Materials, http://dx.doi.org/10.1002/adma.202405006
    Journal articles | 2021
    Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2021, 'Isotopic enrichment of silicon by high fluence 28Si- ion implantation', Physical Review Materials, 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.014601
    Journal articles | 2021
    Robson SG; Jakob AM; Holmes D; Lim SQ; Johnson BC; Jamieson DN, 2021, 'High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 487, pp. 1 - 7, http://dx.doi.org/10.1016/j.nimb.2020.11.005
    Journal articles | 2019
    Holmes D; Lawrie WIL; Johnson BC; Asadpoordarvish A; McCallum JC; McCamey DR; Jamieson DN, 2019, 'Activation and electron spin resonance of near-surface implanted bismuth donors in silicon', Physical Review Materials, 3, http://dx.doi.org/10.1103/PhysRevMaterials.3.083403
  • Preprints | 2024
    Yu X; Wilhelm B; Holmes D; Vaartjes A; Schwienbacher D; Nurizzo M; Kringhøj A; Blankenstein MRV; Jakob AM; Gupta P; Hudson FE; Itoh KM; Murray RJ; Blume-Kohout R; Ladd TD; Dzurak AS; Sanders BC; Jamieson DN; Morello A, 2024, Creation and manipulation of Schrödinger cat states of a nuclear spin qudit in silicon, http://arxiv.org/abs/2405.15494v1
    Preprints | 2023
    Holmes D; Wilhelm B; Jakob AM; Yu X; Hudson FE; Itoh KM; Dzurak AS; Jamieson DN; Morello A, 2023, Improved placement precision of implanted donor spin qubits in silicon using molecule ions, , http://arxiv.org/abs/2308.04117v1
    Preprints | 2020
    Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2020, Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation, , http://dx.doi.org/10.48550/arxiv.2009.08594