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Miss Danielle Holmes
Research Associate

Miss Danielle Holmes

Engineering
Electrical Engineering and Telecommunications
  • Journal articles | 2021
    Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2021, 'Isotopic enrichment of silicon by high fluence 28Si- ion implantation', Physical Review Materials, 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.014601
    Journal articles | 2021
    Robson SG; Jakob AM; Holmes D; Lim SQ; Johnson BC; Jamieson DN, 2021, 'High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 487, pp. 1 - 7, http://dx.doi.org/10.1016/j.nimb.2020.11.005
    Journal articles | 2019
    Holmes D; Lawrie WIL; Johnson BC; Asadpoordarvish A; McCallum JC; McCamey DR; Jamieson DN, 2019, 'Activation and electron spin resonance of near-surface implanted bismuth donors in silicon', Physical Review Materials, 3, http://dx.doi.org/10.1103/PhysRevMaterials.3.083403
  • Preprints | 2023
    Holmes D; Wilhelm B; Jakob AM; Yu X; Hudson FE; Itoh KM; Dzurak AS; Jamieson DN; Morello A, 2023, Improved placement precision of implanted donor spin qubits in silicon using molecule ions, , http://arxiv.org/abs/2308.04117v1
    Preprints | 2020
    Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2020, Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation, , http://dx.doi.org/10.48550/arxiv.2009.08594