Professor Rajib Rahman

Professor

PhD, Purdue University, USA, 2009.

Masters, Purdue University, USA, 2005.

Bachelor of Arts, Gettysburg College, USA, 2002.

Science

School of Physics

I am a computational physicist who develops advanced simulation techniques to understand quantum materials and devices. My research is interdisciplinary in scope and spreads over condensed matter physics, electrical engineering, material science, and computational science. My objective is to develop future electronics and computing technologies utilizing novel quantum phenomena in condensed matter. Solid-state quantum computing is one of my active areas of research. I have developed computational tools that can simulate various aspects of semiconductor qubits such as electronic structure, response to electric and magnetic fields, many-body interactions, and spin-lattice and spin-spin interactions. I am also interested in emerging 2D and topological materials for low energy electronics.

Phone

+61 2 9065 1880

E-mail

rajib.rahman@unsw.edu.au

Location

Old Main Bldg, G57D

Book Chapters | 2015

Ahmed S; Kharche N; Rahman R; Usman M; Lee S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2015, 'Multimillion Atom Simulation of Electronic and Optical Properties of Nanoscale Devices Using NEMO 3-D', in Encyclopedia of Complexity and Systems Science, Springer Berlin Heidelberg, pp. 1 - 69, http://dx.doi.org/10.1007/978-3-642-27737-5_343-2

Book Chapters | 2013

Rahman R; Hollenberg LCL; Klimeck G, 2013, 'Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon', in Prati E; Shinada T (ed.), SINGLE-ATOM NANOELECTRONICS, PAN STANFORD PUBLISHING PTE LTD, pp. 41 - 59

Book Chapters | 2013

Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10

Book Chapters | 2012

, 2012, 'Dopant Metrology in Advanced FinFETs', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 417 - 443, http://dx.doi.org/10.1201/b13063-16

Book Chapters | 2012

, 2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15

Book Chapters | 2012

Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034

Book Chapters | 2012

Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034

Book Chapters | 2009

Ahmed* S; Kharche* N; Rahman* R; Usman* M; Lee* S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2009, 'Multimillion Atom Simulations with Nemo3D', in Encyclopedia of Complexity and Systems Science, Springer New York, pp. 5745 - 5783, http://dx.doi.org/10.1007/978-0-387-30440-3_343
Journal articles | 2025

Geng H; Kiczynski M; Timofeev AV; Osika EN; Keith D; Rowlands J; Kranz L; Rahman R; Chung Y; Keizer JG; Gorman SK; Simmons MY, 2025, 'High-fidelity sub-microsecond single-shot electron spin readout above 3.5 K', Nature Communications, 16, http://dx.doi.org/10.1038/s41467-025-58279-3

Journal articles | 2024

Aliyar T; Ma H; Krishnan R; Singh G; Chong BQ; Wang Y; Verzhbitskiy I; Yu Wong CP; Johnson Goh KE; Shen ZX; Koh TS; Rahman R; Weber B, 2024, 'Symmetry Breaking and Spin-Orbit Coupling for Individual Vacancy-Induced In-Gap States in MoS2 Monolayers', Nano Letters, 24, pp. 2142 - 2148, http://dx.doi.org/10.1021/acs.nanolett.3c03681

Journal articles | 2024

Cifuentes JD; Tanttu T; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Serrano S; Otter D; Dunmore D; Mai PY; Schlattner F; Feng MK; Itoh K; Abrosimov N; Pohl HJ; Thewalt M; Laucht A; Yang CH; Escott CC; Lim WH; Hudson FE; Rahman R; Dzurak AS; Saraiva A, 2024, 'Bounds to electron spin qubit variability for scalable CMOS architectures', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-48557-x

Journal articles | 2024

Cifuentes JD; Tanttu T; Steinacker P; Serrano S; Hansen I; Slack-Smith JP; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Stuyck ND; Itoh K; Abrosimov N; Pohl HJ; Thewalt M; Laucht A; Yang CH; Escott CC; Hudson FE; Lim WH; Rahman R; Dzurak AS; Saraiva A, 2024, 'Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays', Physical Review B, 110, http://dx.doi.org/10.1103/PhysRevB.110.125414

Journal articles | 2024

Hsueh YL; Keith D; Chung Y; Gorman SK; Kranz L; Monir S; Kembrey Z; Keizer JG; Rahman R; Simmons MY, 2024, 'Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale', Advanced Materials, 36, http://dx.doi.org/10.1002/adma.202312736

Journal articles | 2024

Kranz L; Osika EN; Monir S; Hsueh YL; Fricke L; Hile SJ; Chung Y; Keizer JG; Rahman R; Simmons MY, 2024, 'Exploiting Atomic Control to Show When Atoms Become Molecules', Advanced Functional Materials, 34, http://dx.doi.org/10.1002/adfm.202307285

Journal articles | 2024

Krishnan R; Gan BY; Hsueh YL; Huq AMSE; Kenny J; Rahman R; Koh TS; Simmons MY; Weber B, 2024, 'Measurement of Enhanced Spin-Orbit Coupling Strength for Donor-Bound Electron Spins in Silicon', Advanced Materials, 36, http://dx.doi.org/10.1002/adma.202405916

Journal articles | 2024

Ma H; Cullen JH; Monir S; Rahman R; Culcer D, 2024, 'Spin-Hall effect in topological materials: evaluating the proper spin current in systems with arbitrary degeneracies', npj Spintronics, 2, http://dx.doi.org/10.1038/s44306-024-00057-w

Journal articles | 2024

Monir S; Osika EN; Gorman SK; Thorvaldson I; Hsueh YL; Macha P; Kranz L; Reiner J; Simmons MY; Rahman R, 2024, 'Impact of measurement backaction on nuclear spin qubits in silicon', Physical Review B, 109, http://dx.doi.org/10.1103/PhysRevB.109.035157

Journal articles | 2024

Munia MM; Monir S; Osika EN; Simmons MY; Rahman R, 2024, 'Superexchange coupling of donor qubits in silicon', Physical Review Applied, 21, http://dx.doi.org/10.1103/PhysRevApplied.21.014038

Journal articles | 2024

Reiner J; Chung Y; Misha SH; Lehner C; Moehle C; Poulos D; Monir S; Charde KJ; Macha P; Kranz L; Thorvaldson I; Thorgrimsson B; Keith D; Hsueh YL; Rahman R; Gorman SK; Keizer JG; Simmons MY, 2024, 'High-fidelity initialization and control of electron and nuclear spins in a four-qubit register', Nature Nanotechnology, 19, pp. 605 - 611, http://dx.doi.org/10.1038/s41565-023-01596-9

Journal articles | 2024

Wang X; Van Mechelen T; Bharadwaj S; Roknuzzaman M; Bao F; Rahman R; Jacob Z, 2024, 'Exploiting universal nonlocal dispersion in optically active materials for spectro-polarimetric computational imaging', eLight, 4, http://dx.doi.org/10.1186/s43593-024-00078-2

Journal articles | 2023

Cifuentes J; Tanttu T; Gilbert W; Huang J; Vahapoglu E; Leon R; Serrano S; Otter D; Dunmore D; Mai P; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang C-H; Escott C; Lim WH; Hudson F; Rahman R; Dzurak A; Saraiva A, 2023, 'Bounds to electron spin qubit variability for scalable CMOS architectures', , http://dx.doi.org/10.21203/rs.3.rs-3057916/v1

Journal articles | 2023

Donnelly MB; Munia MM; Keizer JG; Chung Y; Huq AMSE; Osika EN; Hsueh YL; Rahman R; Simmons MY, 2023, 'Multi-Scale Modeling of Tunneling in Nanoscale Atomically Precise Si:P Tunnel Junctions', Advanced Functional Materials, 33, http://dx.doi.org/10.1002/adfm.202214011

Journal articles | 2023

Hsueh YL; Kranz L; Keith D; Monir S; Chung Y; Gorman SK; Rahman R; Simmons MY, 2023, 'Hyperfine-mediated spin relaxation in donor-atom qubits in silicon', Physical Review Research, 5, http://dx.doi.org/10.1103/PhysRevResearch.5.023043

Journal articles | 2023

Jiang Y; Zhou S; Mofarah SS; Niu R; Sun Y; Rawal A; Ma H; Xue K; Fang X; Toe CY; Chen WF; Chen YS; Cairney JM; Rahman R; Chen Z; Koshy P; Wang D; Sorrell CC, 2023, 'Efficient and stable piezo-photocatalytic splitting of water and seawater by interfacial engineering of Na0.5Bi0.5TiO3/Na0.5Bi4.5Ti4O15 self-generated heterojunctions', Nano Energy, 116, http://dx.doi.org/10.1016/j.nanoen.2023.108830

Journal articles | 2023

Jones MT; Monir MS; Krauth FN; Macha P; Hsueh YL; Worrall A; Keizer JG; Kranz L; Gorman SK; Chung Y; Rahman R; Simmons MY, 2023, 'Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates', ACS Nano, 17, pp. 22601 - 22610, http://dx.doi.org/10.1021/acsnano.3c06668

Journal articles | 2023

Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202201625

Journal articles | 2023

Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202370039

Journal articles | 2023

Krishnan R; Biswas S; Hsueh YL; Ma H; Rahman R; Weber B, 2023, 'Spin-Valley Locking for In-Gap Quantum Dots in a MoS2 Transistor', Nano Letters, 23, pp. 6171 - 6177, http://dx.doi.org/10.1021/acs.nanolett.3c01779

Journal articles | 2023

Losert MP; Eriksson MA; Joynt R; Rahman R; Scappucci G; Coppersmith SN; Friesen M, 2023, 'Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells', Physical Review B, 108, http://dx.doi.org/10.1103/PhysRevB.108.125405

Journal articles | 2023

Roknuzzaman M; Bharadwaj S; Wang Y; Khandekar C; Jiao D; Rahman R; Jacob Z, 2023, 'First-principles study of large gyrotropy in MnBi for infrared thermal photonics', Physical Review B, 108, http://dx.doi.org/10.1103/PhysRevB.108.224307

Journal articles | 2023

Sun W; Bharadwaj S; Yang LP; Hsueh YL; Wang Y; Jiao D; Rahman R; Jacob Z, 2023, 'Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.064038

Journal articles | 2022

Cao C; Zhong Y; Chandula Wasalathilake K; Tadé MO; Xu X; Rabiee H; Roknuzzaman M; Rahman R; Shao Z, 2022, 'A low resistance and stable lithium-garnet electrolyte interface enabled by a multifunctional anode additive for solid-state lithium batteries', Journal of Materials Chemistry A, 10, pp. 2519 - 2527, http://dx.doi.org/10.1039/d1ta07804f

Journal articles | 2022

Gardin A; Monaghan RD; Whittaker T; Rahman R; Tettamanzi GC, 2022, 'Nonadiabatic quantum control of valley states in silicon', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.075406

Journal articles | 2022

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006

Journal articles | 2022

Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach', Communications Physics, 5, http://dx.doi.org/10.1038/s42005-022-00948-6

Journal articles | 2022

Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Author Correction: Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach (Communications Physics, (2022), 5, 1, (165), 10.1038/s42005-022-00948-6)', Communications Physics, 5, http://dx.doi.org/10.1038/s42005-022-01014-x

Journal articles | 2022

McJunkin T; Harpt B; Feng Y; Losert MP; Rahman R; Dodson JP; Wolfe MA; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Joynt R; Eriksson MA, 2022, 'SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits', Nature Communications, 13, http://dx.doi.org/10.1038/s41467-022-35510-z

Journal articles | 2022

Osika EN; Gorman SK; Monir S; Hsueh YL; Borscz M; Geng H; Thorgrimsson B; Simmons MY; Rahman R, 2022, 'Shelving and latching spin readout in atom qubits in silicon', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.075418

Journal articles | 2022

Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007

Journal articles | 2022

Paquelet Wuetz B; Losert MP; Koelling S; Stehouwer LEA; Zwerver AMJ; Philips SGJ; Mądzik MT; Xue X; Zheng G; Lodari M; Amitonov SV; Samkharadze N; Sammak A; Vandersypen LMK; Rahman R; Coppersmith SN; Moutanabbir O; Friesen M; Scappucci G, 2022, 'Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots', Nature Communications, 13, http://dx.doi.org/10.1038/s41467-022-35458-0

Journal articles | 2022

Poursoti Z; Sun W; Bharadwaj S; Malac M; Iyer S; Khosravi F; Cui K; Qi L; Nazemifard N; Jagannath R; Rahman R; Jacob Z, 2022, 'Deep ultra-violet plasmonics: exploiting momentum-resolved electron energy loss spectroscopy to probe germanium', Optics Express, 30, pp. 12630 - 12638, http://dx.doi.org/10.1364/OE.447017

Journal articles | 2022

Sarkar A; Hochstetter J; Kha A; Hu X; Simmons MY; Rahman R; Culcer D, 2022, 'Optimisation of electron spin qubits in electrically driven multi-donor quantum dots', npj Quantum Information, 8, http://dx.doi.org/10.1038/s41534-022-00646-9

Journal articles | 2022

Tankasala A; Voisin B; Kembrey Z; Salfi J; Hsueh YL; Osika EN; Rogge S; Rahman R, 2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.155158

Journal articles | 2022

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', MATERIALS FOR QUANTUM TECHNOLOGY, 2, http://dx.doi.org/10.1088/2633-4356/ac5d1d

Journal articles | 2021

Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2021, 'Exchange Coupling in a Linear Chain of Three Quantum-Dot Spin Qubits in Silicon', Nano Letters, 21, pp. 1517 - 1522, http://dx.doi.org/10.1021/acs.nanolett.0c04771

Journal articles | 2021

Gyure MF; Kiselev AA; Ross RS; Rahman R; Van de Walle CG, 2021, 'Materials and device simulations for silicon qubit design and optimization', MRS Bulletin, 46, pp. 634 - 641, http://dx.doi.org/10.1557/s43577-021-00140-1

Journal articles | 2021

Voisin B; Salfi J; Rahman R; Rogge S, 2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, 46, pp. 616 - 622, http://dx.doi.org/10.1557/s43577-021-00136-x

Journal articles | 2020

Mazzola F; Chen CY; Rahman R; Zhu XG; Polley CM; Balasubramanian T; King PDC; Hofmann P; Miwa JA; Wells JW, 2020, 'The sub-band structure of atomically sharp dopant profiles in silicon', npj Quantum Materials, 5, http://dx.doi.org/10.1038/s41535-020-0237-1

Journal articles | 2020

Sengupta P; Khandekar C; Van Mechelen T; Rahman R; Jacob Z, 2020, 'Electron g -factor engineering for nonreciprocal spin photonics', Physical Review B, 101, http://dx.doi.org/10.1103/PhysRevB.101.035412

Journal articles | 2020

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, 11, http://dx.doi.org/10.1038/s41467-020-19835-1

Journal articles | 2019

Ameen TA; Ilatikhameneh H; Fay P; Seabaugh A; Rahman R; Klimeck G, 2019, 'Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs', IEEE Transactions on Electron Devices, 66, pp. 736 - 742, http://dx.doi.org/10.1109/TED.2018.2877753

Journal articles | 2019

Nakamura J; Fallahi S; Sahasrabudhe H; Rahman R; Liang S; Gardner GC; Manfra MJ, 2019, 'Aharonov–Bohm interference of fractional quantum Hall edge modes', Nature Physics, 15, pp. 563 - 569, http://dx.doi.org/10.1038/s41567-019-0441-8

Journal articles | 2019

Pang CS; Chen CY; Ameen T; Zhang S; Ilatikhameneh H; Rahman R; Klimeck G; Chen Z, 2019, 'WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing', Small, 15, http://dx.doi.org/10.1002/smll.201902770

Journal articles | 2019

Wu P; Ameen T; Zhang H; Bendersky LA; Ilatikhameneh H; Klimeck G; Rahman R; Davydov AV; Appenzeller J, 2019, 'Complementary Black Phosphorus Tunneling Field-Effect Transistors', ACS Nano, 13, pp. 377 - 385, http://dx.doi.org/10.1021/acsnano.8b06441

Journal articles | 2018

Ameen TA; Ilatikhameneh H; Tankasala A; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Rahman R; Klimeck G, 2018, 'Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot', Beilstein Journal of Nanotechnology, 9, pp. 1075 - 1084, http://dx.doi.org/10.3762/bjnano.9.99

Journal articles | 2018

Chen CY; Ameen TA; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2018, 'Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs', IEEE Transactions on Electron Devices, 65, pp. 4614 - 4621, http://dx.doi.org/10.1109/TED.2018.2862408

Journal articles | 2018

Chen F; Ilatikhameneh H; Tan Y; Klimeck G; Rahman R, 2018, 'Switching Mechanism and the Scalability of Vertical-TFETs', IEEE Transactions on Electron Devices, 65, pp. 3065 - 3068, http://dx.doi.org/10.1109/TED.2018.2831688

Journal articles | 2018

Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Sahasrabudhe H; Klimeck G; Morello A; Dzurak AS; Rahman R, 2018, 'Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability', Physical Review B, 97, http://dx.doi.org/10.1103/PhysRevB.97.241401

Journal articles | 2018

Ferdous R; Kawakami E; Scarlino P; Nowak MP; Ward DR; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Eriksson MA; Vandersypen LMK; Rahman R, 2018, 'Valley dependent anisotropic spin splitting in silicon quantum dots', npj Quantum Information, 4, http://dx.doi.org/10.1038/s41534-018-0075-1

Journal articles | 2018

Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, 4, pp. eaaq1459, http://dx.doi.org/10.1126/sciadv.aaq1459

Journal articles | 2018

Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2018, 'Dramatic impact of dimensionality on the electrostatics of P-N junctions and its sensing and switching applications', IEEE Transactions on Nanotechnology, 17, pp. 293 - 298, http://dx.doi.org/10.1109/TNANO.2018.2799960

Journal articles | 2018

Ilatikhameneh H; Ameen TA; Chen C; Klimeck G; Rahman R, 2018, 'Sensitivity Challenge of Steep Transistors', IEEE Transactions on Electron Devices, 65, pp. 1633 - 1639, http://dx.doi.org/10.1109/TED.2018.2808040

Journal articles | 2018

Sahasrabudhe H; Novakovic B; Nakamura J; Fallahi S; Povolotskyi M; Klimeck G; Rahman R; Manfra MJ, 2018, 'Optimization of edge state velocity in the integer quantum Hall regime', Physical Review B, 97, http://dx.doi.org/10.1103/PhysRevB.97.085302

Journal articles | 2018

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.031049

Journal articles | 2018

Shekhar P; Pendharker S; Sahasrabudhe H; Vick D; Malac M; Rahman R; Jacob Z, 2018, 'Extreme ultraviolet plasmonics and Cherenkov radiation in silicon', Optica, 5, pp. 1590 - 1596, http://dx.doi.org/10.1364/OPTICA.5.001590

Journal articles | 2018

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, 97, pp. 195301, http://dx.doi.org/10.1103/PhysRevB.97.195301

Journal articles | 2018

Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', npj Quantum Information, 4, http://dx.doi.org/10.1038/s41534-018-0111-1

Journal articles | 2017

Ameen TA; Ilatikhameneh H; Huang JZ; Povolotskyi M; Rahman R; Klimeck G, 2017, 'Combination of Equilibrium and Nonequilibrium Carrier Statistics into an Atomistic Quantum Transport Model for Tunneling Heterojunctions', IEEE Transactions on Electron Devices, 64, pp. 2512 - 2518, http://dx.doi.org/10.1109/TED.2017.2690626

Journal articles | 2017

Chen FW; Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2017, 'Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene', IEEE Electron Device Letters, 38, pp. 130 - 133, http://dx.doi.org/10.1109/LED.2016.2627538

Journal articles | 2017

Huang JZ; Long P; Povolotskyi M; Ilatikhameneh H; Ameen TA; Rahman R; Rodwell MJW; Klimeck G, 2017, 'A Multiscale Modeling of Triple-Heterojunction Tunneling FETs', IEEE Transactions on Electron Devices, 64, pp. 2728 - 2735, http://dx.doi.org/10.1109/TED.2017.2690669

Journal articles | 2017

Rahman R; Ilatikhameneh H; Ameen T; Klimeck G, 2017, '(Invited) Energy Efficient Transistors with 2D Materials', ECS Meeting Abstracts, MA2017-01, pp. 990 - 990, http://dx.doi.org/10.1149/ma2017-01/16/990

Journal articles | 2017

Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, 3, http://dx.doi.org/10.1126/sciadv.1602811

Journal articles | 2017

Zheng C; Zhang Q; Weber B; Ilatikhameneh H; Chen F; Sahasrabudhe H; Rahman R; Li S; Chen Z; Hellerstedt J; Zhang Y; Duan WH; Bao Q; Fuhrer MS, 2017, 'Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures', ACS Nano, 11, pp. 2785 - 2793, http://dx.doi.org/10.1021/acsnano.6b07832

Journal articles | 2016

Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R, 2016, 'Few-layer phosphorene: An ideal 2D material for tunnel transistors', Scientific Reports, 6, http://dx.doi.org/10.1038/srep28515

Journal articles | 2016

Chen FW; Ilatikhameneh H; Klimeck G; Chen Z; Rahman R, 2016, 'Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET', IEEE Journal of the Electron Devices Society, 4, pp. 124 - 128, http://dx.doi.org/10.1109/JEDS.2016.2539919

Journal articles | 2016

Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R, 2016, 'Saving Moore's Law Down to 1 nm Channels with Anisotropic Effective Mass', Scientific Reports, 6, http://dx.doi.org/10.1038/srep31501

Journal articles | 2016

Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2016, 'Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots', IEEE Journal of Quantum Electronics, 52, http://dx.doi.org/10.1109/JQE.2016.2573959

Journal articles | 2016

Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2016, 'Design rules for high performance tunnel transistors from 2-D materials', IEEE Journal of the Electron Devices Society, 4, pp. 260 - 265, http://dx.doi.org/10.1109/JEDS.2016.2568219

Journal articles | 2016

Ilatikhameneh H; Klimeck G; Rahman R, 2016, 'Can Homojunction Tunnel FETs Scale below 10 nm?', IEEE Electron Device Letters, 37, pp. 115 - 118, http://dx.doi.org/10.1109/LED.2015.2501820

Journal articles | 2016

Ilatikhameneh H; Salazar RB; Klimeck G; Rahman R; Appenzeller J, 2016, 'From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling', IEEE Transactions on Electron Devices, 63, pp. 2871 - 2878, http://dx.doi.org/10.1109/TED.2016.2565582

Journal articles | 2016

Mohiyaddin FA; Kalra R; Laucht A; Rahman R; Klimeck G; Morello A, 2016, 'Transport of spin qubits with donor chains under realistic experimental conditions', Physical Review B, 94, http://dx.doi.org/10.1103/PhysRevB.94.045314

Journal articles | 2016

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, 7, http://dx.doi.org/10.1038/ncomms11342

Journal articles | 2016

Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83

Journal articles | 2016

Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques (vol 6, 31830, 2016)', SCIENTIFIC REPORTS, 6, http://dx.doi.org/10.1038/srep38120

Journal articles | 2016

Wang Y; Chen CY; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques', Scientific Reports, 6, http://dx.doi.org/10.1038/srep31830

Journal articles | 2016

Wang Y; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2016, 'Highly tunable exchange in donor qubits in silicon', npj Quantum Information, 2, http://dx.doi.org/10.1038/npjqi.2016.8

Journal articles | 2015

Chu T; Ilatikhameneh H; Klimeck G; Rahman R; Chen Z, 2015, 'Electrically Tunable Bandgaps in Bilayer MoS2', Nano Letters, 15, pp. 8000 - 8007, http://dx.doi.org/10.1021/acs.nanolett.5b03218

Journal articles | 2015

Ilatikhameneh H; Ameen TA; Klimeck G; Appenzeller J; Rahman R, 2015, 'Dielectric Engineered Tunnel Field-Effect Transistor', IEEE Electron Device Letters, 36, pp. 1097 - 1100, http://dx.doi.org/10.1109/LED.2015.2474147

Journal articles | 2015

Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2015, 'Scaling Theory of Electrically Doped 2D Transistors', IEEE Electron Device Letters, 36, pp. 726 - 728, http://dx.doi.org/10.1109/LED.2015.2436356

Journal articles | 2015

Ilatikhameneh H; Tan Y; Novakovic B; Klimeck G; Rahman R; Appenzeller J, 2015, 'Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials', IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 1, pp. 12 - 18, http://dx.doi.org/10.1109/JXCDC.2015.2423096

Journal articles | 2015

Laucht A; Muhonen J; Mohiyaddin F; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak A; Morello A, 2015, 'Electrically controlling single-spin qubits in a continuous microwave field', Science Advances, http://dx.doi.org/10.1126/sciadv.1500022

Journal articles | 2015

Li W; Sharmin S; Ilatikhameneh H; Rahman R; Lu Y; Wang J; Yan X; Seabaugh A; Klimeck G; Jena D; Fay P, 2015, 'Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors', IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 1, pp. 28 - 34, http://dx.doi.org/10.1109/JXCDC.2015.2426433

Journal articles | 2015

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, 106, pp. 203110, http://dx.doi.org/10.1063/1.4921640

Journal articles | 2015

Neupane MR; Rahman R; Lake RK, 2015, 'Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals', Physical Chemistry Chemical Physics, 17, pp. 2484 - 2493, http://dx.doi.org/10.1039/c4cp03711a

Journal articles | 2015

Salazar RB; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2015, 'A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations', Journal of Applied Physics, 118, http://dx.doi.org/10.1063/1.4934682

Journal articles | 2015

Tosi G; Mohiyaddin FA; Tenberg S; Rahman R; Klimeck G; Morello A, 2015, 'Silicon quantum processor with robust long-distance qubit couplings', arxiv, http://arxiv.org/pdf/1509.08538v1.pdf

Journal articles | 2015

Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, 91, pp. 245209, http://dx.doi.org/10.1103/PhysRevB.91.245209

Journal articles | 2015

Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154207

Journal articles | 2015

Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154203

Journal articles | 2014

Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R; Buch H, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, 113, pp. 246406, http://dx.doi.org/10.1103/PhysRevLett.113.246406

Journal articles | 2014

Pla JJ; Mohiyaddin FA; Tan KY; Dehollain JP; Rahman R; Klimeck G; Jamieson DN; Dzurak AS; Morello A, 2014, 'Coherent control of a single Si 29 nuclear spin qubit', Physical Review Letters, 113, http://dx.doi.org/10.1103/PhysRevLett.113.246801

Journal articles | 2014

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941

Journal articles | 2014

Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2014, 'Spin blockade and exchange in Coulomb-confined silicon double quantum dots', Nature Nanotechnology, 9, pp. 430 - 435, http://dx.doi.org/10.1038/nnano.2014.63

Journal articles | 2013

Buch H; Mahapatra S; Rahman R; Morello A; Simmons MY, 2013, 'Spin readout and addressability of phosphorus-donor clusters in silicon', Nature communications, 4, pp. Article number: 2017, http://dx.doi.org/10.1038/ncomms3017

Journal articles | 2013

Mohiyaddin FA; Rahman R; Kalra R; Klimeck ; Hollenberg ; Pla JJ; Dzurak AS; Morello A, 2013, 'Noninvasive spatial metrology of single-atom devices', Nano Letters, 13, pp. 1903 - 1909, http://dx.doi.org/10.1021/nl303863s

Journal articles | 2013

Nguyen KT; Lilly MP; Nielsen E; Bishop N; Rahman R; Young R; Wendt J; Dominguez J; Pluym T; Stevens J; Lu TM; Muller R; Carroll MS, 2013, 'Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot', Nano Letters, 13, pp. 5785 - 5790, http://dx.doi.org/10.1021/nl4020759

Journal articles | 2013

Tettamanzi G, 2013, 'Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade (vol 107, 136602, 2011)', Physical Review Letters, 110, pp. 49901 - 049901, http://dx.doi.org/10.1103/PhysRevLett.110.049901

Journal articles | 2012

Neupane MR; Lake RK; Rahman R, 2012, 'Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores', Journal of Applied Physics, 112, http://dx.doi.org/10.1063/1.4739715

Journal articles | 2012

Nielsen E; Rahman R; Muller RP, 2012, 'A many-electron tight binding method for the analysis of quantum dot systems', Journal of Applied Physics, 112, http://dx.doi.org/10.1063/1.4759256

Journal articles | 2012

Rahman R; Nielsen E; Muller RP; Carroll MS, 2012, 'Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric', Physical Review B - Condensed Matter and Materials Physics, 85, http://dx.doi.org/10.1103/PhysRevB.85.125423

Journal articles | 2012

Witzel WM; Rahman R; Carroll MS, 2012, 'Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge', Physical Review B - Condensed Matter and Materials Physics, 85, http://dx.doi.org/10.1103/PhysRevB.85.205312

Journal articles | 2011

Lansbergen G; Rahman R; Verduijn A; Tettamanzi G; Collaert N; Biesemans S; Klimeck G; Rogge S; Hollenberg L, 2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, 107, pp. 136602-1 - 136602-5, http://dx.doi.org/10.1103/PhysRevLett.107.136602

Journal articles | 2011

Neupane MR; Lake RK; Rahman R, 2011, 'Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals', Journal of Applied Physics, 110, http://dx.doi.org/10.1063/1.3642970

Journal articles | 2011

Rahman ; Lansbergen ; Verduijn A; Tettamanzi G; Park ; Collaert ; Biesemans ; Klimeck ; Hollenberg ; Rogge S, 2011, 'Electric field reduced charging energies and two-electron bound excited states of single donors in silicon', Physical Review B, 84, pp. 115458-1 - 115458-7, http://dx.doi.org/10.1103/PhysRevB.84.115428

Journal articles | 2011

Rahman R; Park SH; Klimeck G; Hollenberg LCL, 2011, 'Stark tuning of the charge states of a two-donor molecule in silicon', Nanotechnology, 22, http://dx.doi.org/10.1088/0957-4484/22/22/225202

Journal articles | 2011

Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, 83, http://dx.doi.org/10.1103/PhysRevB.83.239904

Journal articles | 2011

Rahman R; Verduijn JA; Kharche N; Lansbergen G; Klimeck ; Hollenberg ; Rogge S, 2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, 83, pp. 195323-1 - 195323-5, http://dx.doi.org/10.1103/PhysRevB.83.195323

Journal articles | 2010

Rahman R; Muller RP; Levy JE; Carroll MS; Klimeck G; Greentree AD; Hollenberg LCL, 2010, 'Coherent electron transport by adiabatic passage in an imperfect donor chain', Physical Review B - Condensed Matter and Materials Physics, 82, http://dx.doi.org/10.1103/PhysRevB.82.155315

Journal articles | 2009

Park SH; Rahman R; Klimeck G; Hollenberg LCL, 2009, 'Mapping donor electron wave function deformations at a sub-bohr orbit resolution', Physical Review Letters, 103, http://dx.doi.org/10.1103/PhysRevLett.103.106802

Journal articles | 2009

Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314

Journal articles | 2009

Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg L, 2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, 80, pp. 155301-1 - 155301-5, http://dx.doi.org/10.1103/PhysRevB.80.155301

Journal articles | 2009

Rahman R; Park SH; Cole JH; Greentree AD; Muller RP; Klimeck G; Hollenberg LCL, 2009, 'Atomistic simulations of adiabatic coherent electron transport in triple donor systems', Physical Review B - Condensed Matter and Materials Physics, 80, http://dx.doi.org/10.1103/PhysRevB.80.035302

Journal articles | 2008

Lansbergen G; Rahman R; Wellard C; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, 1067, pp. 12 - 17, http://dx.doi.org/10.1557/proc-1067-b03-07

Journal articles | 2008

Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994

Journal articles | 2008

Lansbergen GP; Rahman R; Wellard CJ; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, 1117, pp. 1 - 6, http://dx.doi.org/10.1557/proc-1117-j01-03

Journal articles | 2008

Naumov M; Lee S; Haley B; Bae H; Clark S; Rahman R; Ryu H; Saied F; Klimeck G, 2008, 'Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D', Journal of Computational Electronics, 7, pp. 297 - 300, http://dx.doi.org/10.1007/s10825-008-0223-5

Journal articles | 2007

Klimeck G; Ahmed SS; Bae H; Clark S; Haley B; Lee S; Naumov M; Ryu H; Saied F; Prada M; Korkusinski M; Boykin TB; Rahman R, 2007, 'Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks', IEEE Transactions on Electron Devices, 54, pp. 2079 - 2089, http://dx.doi.org/10.1109/TED.2007.902879

Journal articles | 2007

Rahman R; Wellard CJ; Bradbury FR; Prada M; Cole JH; Klimeck G; Hollenberg LCL, 2007, 'High precision quantum control of single donor spins in silicon', Physical Review Letters, 99, http://dx.doi.org/10.1103/PhysRevLett.99.036403
Working Papers | 2023

Cifuentes J; Tanttu T; Gilbert W; Huang J; Vahapoglu E; Leon R; Serrano S; Otter D; Dunmore D; Mai P; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang C-H; Escott C; Lim WH; Hudson F; Rahman R; Dzurak A; Saraiva A, 2023, Bounds to electron spin qubit variability for scalable CMOS architectures, http://dx.doi.org10.21203/rs.3.rs-3057916/v1, https://doi.org/10.21203/rs.3.rs-3057916/v1
Preprints | 2025

Sarkar A; Chowdhury P; Hu X; Saraiva A; Dzurak AS; Hamilton AR; Rahman R; Sarma SD; Culcer D, 2025, Effect of disorder and strain on the operation of planar Ge hole spin qubits, http://dx.doi.org/10.48550/arxiv.2502.06949

Preprints | 2024

Aliyar T; Ma H; Krishnan R; Singh G; Chong BQ; Wang Y; Verzhbitskiy I; Wong CPY; Goh KEJ; Shen ZX; Koh TS; Rahman R; Weber B, 2024, Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers, http://dx.doi.org/10.48550/arxiv.2402.01193

Preprints | 2024

Krishnan R; Gan BY; Hsueh Y-L; Huq AMS-E; Kenny J; Rahman R; Koh TS; Simmons MY; Weber B, 2024, Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon, http://dx.doi.org/10.48550/arxiv.2404.15762

Preprints | 2024

Ma H; Cullen JH; Monir S; Rahman R; Culcer D, 2024, Spin-Hall effect in topological materials: Evaluating the proper spin current in systems with arbitrary degeneracies, http://dx.doi.org/10.1038/s44306-024-00057-w

Preprints | 2023

Cifuentes JD; Tanttu T; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Serrano S; Otter D; Dunmore D; Mai PY; Schlattner F; Feng M; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Lim WH; Hudson FE; Rahman R; Dzurak AS; Saraiva A, 2023, Bounds to electron spin qubit variability for scalable CMOS architectures, http://dx.doi.org/10.1038/s41467-024-48557-x

Preprints | 2023

Cifuentes JD; Tanttu T; Steinacker P; Serrano S; Hansen I; Slack-Smith JP; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Stuyck ND; Itoh K; Abrosimov N; Pohl H-J; Thewalt M; Laucht A; Yang CH; Escott CC; Hudson FE; Lim WH; Rahman R; Dzurak AS; Saraiva A, 2023, Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays, http://dx.doi.org/10.1103/PhysRevB.110.125414

Preprints | 2023

Krishnan R; Biswas S; Hsueh Y-L; Ma H; Rahman R; Weber B, 2023, Spin-valley locking for in-gap quantum dots in a MoS2 transistor, http://dx.doi.org/10.48550/arxiv.2306.13542

Preprints | 2023

Losert MP; Eriksson MA; Joynt R; Rahman R; Scappucci G; Coppersmith SN; Friesen M, 2023, Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells, http://dx.doi.org/10.48550/arxiv.2303.02499

Preprints | 2023

Monir S; Osika EN; Gorman SK; Thorvaldson I; Hsueh Y-L; Macha P; Kranz L; Reiner J; Simmons MY; Rahman R, 2023, Impact of measurement backaction on nuclear spin qubits in silicon, http://dx.doi.org/10.48550/arxiv.2310.12656

Preprints | 2023

Munia MM; Monir S; Osika EN; Simmons MY; Rahman R, 2023, Superexchange coupling of donor qubits in silicon, http://dx.doi.org/10.48550/arxiv.2309.00276

Preprints | 2023

Roknuzzaman M; Bharadwaj S; Wang Y; Khandekar C; Jiao D; Rahman R; Jacob Z, 2023, First-Principles Study of Large Gyrotropy in MnBi for Infrared Thermal Photonics, http://dx.doi.org/10.48550/arxiv.2306.09233

Preprints | 2022

Sarkar A; Hochstetter J; Kha A; Hu X; Simmons MY; Rahman R; Culcer D, 2022, Optimisation of electrically-driven multi-donor quantum dot qubits, http://dx.doi.org/10.48550/arxiv.2203.16553

Preprints | 2022

Sun W; Bharadwaj S; Yang L-P; Hsueh Y-L; Wang Y; Jiao D; Rahman R; Jacob Z, 2022, Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations, http://dx.doi.org/10.48550/arxiv.2207.09441

Preprints | 2021

Gardin A; Monaghan RD; Whittaker T; Rahman R; Tettamanzi GC, 2021, Non-adiabatic quantum control of valley states in silicon, http://dx.doi.org/10.48550/arxiv.2105.13668

Preprints | 2021

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, http://dx.doi.org/10.48550/arxiv.2105.02906

Preprints | 2021

McJunkin T; Harpt B; Feng Y; Losert MP; Rahman R; Dodson JP; Wolfe MA; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Joynt R; Eriksson MA, 2021, SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits, http://dx.doi.org/10.48550/arxiv.2112.09765

Preprints | 2021

Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, http://dx.doi.org/10.48550/arxiv.2105.02904

Preprints | 2021

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2021, Valley interference and spin exchange at the atomic scale in silicon, http://dx.doi.org/10.48550/arxiv.2105.10931

Preprints | 2021

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2021, Valley population of donor states in highly strained silicon, http://dx.doi.org/10.48550/arxiv.2109.08540

Preprints | 2021

Voisin B; Salfi J; Rahman R; Rogge S, 2021, Novel characterisation of dopant-based qubits, http://dx.doi.org/10.48550/arxiv.2107.00784

Preprints | 2021

Wuetz BP; Losert MP; Koelling S; Stehouwer LEA; Zwerver A-MJ; Philips SGJ; Mądzik MT; Xue X; Zheng G; Lodari M; Amitonov SV; Samkharadze N; Sammak A; Vandersypen LMK; Rahman R; Coppersmith SN; Moutanabbir O; Friesen M; Scappucci G, 2021, Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots, http://dx.doi.org/10.48550/arxiv.2112.09606

Preprints | 2020

Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2020, Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon, http://dx.doi.org/10.48550/arxiv.2004.07666

Preprints | 2019

Mazzola F; Chen C-Y; Rahman R; Zhu X-G; Polley CM; Balasubramanian T; King PDC; Hofmann P; Miwa JA; Wells JW, 2019, The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon, http://dx.doi.org/10.48550/arxiv.1904.10929

Preprints | 2019

Nakamura J; Fallahi S; Sahasrabudhe H; Rahman R; Liang S; Gardner GC; Manfra MJ, 2019, Aharonov-Bohm interference of fractional quantum Hall edge modes, http://dx.doi.org/10.48550/arxiv.1901.08452

Preprints | 2019

Sengupta P; Khandekar C; Van Mechelen T; Rahman R; Jacob Z, 2019, Electron g-factor engineering for non-reciprocal spin photonics, http://dx.doi.org/10.48550/arxiv.1908.06393

Preprints | 2018

Chen C-Y; Ameen TA; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2018, Channel thickness optimization for ultra thin and 2D chemically doped TFETs, http://dx.doi.org/10.48550/arxiv.1804.11034

Preprints | 2018

Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, Addressable electron spin resonance using donors and donor molecules in silicon, http://dx.doi.org/10.48550/arxiv.1807.10290

Preprints | 2017

Ameen TA; Ilatikhameneh H; Huang JZ; Povolotskyi M; Rahman R; Klimeck G, 2017, Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions, http://dx.doi.org/10.48550/arxiv.1702.01248

Preprints | 2017

Chen F; Ilatikhameneh H; Tan Y; Klimeck G; Rahman R, 2017, Switching Mechanism and the Scalability of vertical-TFETs, http://dx.doi.org/10.48550/arxiv.1711.01832

Conference Papers | 2017

Chen F; Ilatikhameneh H; Tan Y; Valencia D; Klimeck G; Rahman R, 2017, 'Transport in vertically stacked hetero-structures from 2D materials', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/864/1/012053

Conference Papers | 2017

Fay P; Li W; Digiovanni D; Cao L; Ilatikhameneh H; Chen F; Ameen T; Rahman R; Klimeck G; Lund C; Keller S; Islam SM; Chaney A; Cho Y; Jena D, 2017, 'III-N heterostructure devices for low-power logic', in China Semiconductor Technology International Conference 2017, CSTIC 2017, http://dx.doi.org/10.1109/CSTIC.2017.7919743

Preprints | 2017

Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Klimeck G; Morello A; Dzurak AS; Rahman R, 2017, Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability, http://dx.doi.org/10.48550/arxiv.1703.03840

Preprints | 2017

Ferdous R; Kawakami E; Scarlino P; Nowak MP; Ward DR; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Eriksson MA; Vandersypen LMK; Rahman R, 2017, Valley dependent anisotropic spin splitting in silicon quantum dots, http://dx.doi.org/10.48550/arxiv.1702.06210

Preprints | 2017

Huang JZ; Long P; Povolotskyi M; Ilatikhameneh H; Ameen T; Rahman R; Rodwell MJW; Klimeck G, 2017, A Multiscale Modeling of Triple-Heterojunction Tunneling FETs, http://dx.doi.org/10.48550/arxiv.1701.00480

Preprints | 2017

Ilatikhameneh H; Ameen T; Chen C; Klimeck G; Rahman R, 2017, Sensitivity Challenge of Steep Transistors, http://dx.doi.org/10.48550/arxiv.1709.06276

Preprints | 2017

Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2017, Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions, http://dx.doi.org/10.48550/arxiv.1704.05488

Conference Papers | 2017

Nishat MRK; Tankasala A; Kharche N; Rahman R; Ahmed SS, 2017, 'Multiscale-multiphysics modeling of nonpolar InGaN LEDs', in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017, pp. 85 - 88, http://dx.doi.org/10.1109/NANO.2017.8117449

Preprints | 2017

Sahasrabudhe H; Novakovic B; Nakamura J; Fallahi S; Povolotskyi M; Klimeck G; Rahman R; Manfra MJ, 2017, Optimization of edge state velocity in the integer quantum Hall regime, http://dx.doi.org/10.48550/arxiv.1705.07005

Preprints | 2017

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, http://dx.doi.org/10.48550/arxiv.1706.09261

Preprints | 2017

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, http://dx.doi.org/10.48550/arxiv.1703.04175

Conference Papers | 2017

Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Electron spin relaxation of single phosphorus donors and donor clusters in atomically engineered silicon devices', in 2017 Silicon Nanoelectronics Workshop, SNW 2017, pp. 23 - 24, http://dx.doi.org/10.23919/SNW.2017.8242278

Preprints | 2016

Chen F; Ilatikhameneh H; Tan Y; Valencia D; Klimeck G; Rahman R, 2016, Transport in vertically stacked hetero-structures from 2D materials, http://dx.doi.org/10.48550/arxiv.1608.05057

Preprints | 2016

Chen FW; Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2016, Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene, http://dx.doi.org/10.48550/arxiv.1607.04065

Conference Papers | 2016

Fay P; Li W; Cao L; Pourang K; Islam SM; Lund C; Saima S; Ilatikhameneh H; Amin T; Huang J; Rahman R; Jena D; Keller S; Klimeck G, 2016, 'Novel III-N heterostructure devices for low-power logic and more', in 16th International Conference on Nanotechnology - IEEE NANO 2016, pp. 767 - 769, http://dx.doi.org/10.1109/NANO.2016.7751336

Conference Papers | 2016

Huang JZ; Long P; Ilatikhameneh H; Ameen T; Rahman R; Povolotskyi M; Rodwell MJW; Klimeck G, 2016, 'Multiscale Transport Simulation of Nanoelectronic Devices with NEMO5', in 2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS), IEEE, PEOPLES R CHINA, Shanghai, pp. 914 - 914, presented at Progress in Electromagnetic Research Symposium (PIERS), PEOPLES R CHINA, Shanghai, 08 August 2016 - 11 August 2016, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000400013900313&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Preprints | 2016

Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2016, Impact of Dimensionality on PN Junctions, http://dx.doi.org/10.48550/arxiv.1611.08784

Preprints | 2016

Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R, 2016, Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass, http://dx.doi.org/10.48550/arxiv.1605.03979

Preprints | 2016

Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2016, Design Rules for High Performance Tunnel Transistors from 2D Materials, http://dx.doi.org/10.48550/arxiv.1603.09402

Conference Papers | 2016

Long P; Huang JZ; Povolotskyi M; Verreck D; Klimeck G; Rodwell MJW, 2016, 'High-current InP-based triple heterojunction tunnel transistors', in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), IEEE, pp. 1 - 2, presented at 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)], 26 June 2016 - 30 June 2016, http://dx.doi.org/10.1109/iciprm.2016.7528592

Conference Papers | 2016

Long P; Povolotskyi M; Huang JZ; Ilatikhameneh H; Ameen T; Rahman R; Kubis T; Klimeck G; Rodwell MJW, 2016, 'Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors', in Device Research Conference - Conference Digest, DRC, http://dx.doi.org/10.1109/DRC.2016.7548424

Preprints | 2016

Mohiyaddin FA; Kalra R; Laucht A; Rahman R; Klimeck G; Morello A, 2016, Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions, http://dx.doi.org/10.48550/arxiv.1602.07058

Preprints | 2016

Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LLC, 2016, Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision, http://dx.doi.org/10.48550/arxiv.1601.02326

Preprints | 2016

Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, Characterizing Si:P quantum dot qubits with spin resonance techniques, http://dx.doi.org/10.48550/arxiv.1607.01086

Preprints | 2015

Ameen T; Ilatikhameneh H; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Wenner BR; Rahman R; Klimeck G, 2015, Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots, http://dx.doi.org/10.48550/arxiv.1502.07726

Preprints | 2015

Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R, 2015, Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors, http://dx.doi.org/10.48550/arxiv.1512.05021

Conference Papers | 2015

Ameen TA; Ilatikhameneh H; Valencia D; Rahman R; Klimeck G, 2015, 'Engineering the optical transitions of self-assembled quantum dots', in 18th International Workshop on Computational Electronics, IWCE 2015, http://dx.doi.org/10.1109/IWCE.2015.7301940

Preprints | 2015

Chen FW; Ilatikhameneh H; Klimeck G; Chen Z; Rahman R, 2015, Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET, http://dx.doi.org/10.48550/arxiv.1509.03593

Conference Papers | 2015

Chen FW; Ilatikhameneh H; Klimeck G; Rahman R; Chu T; Chen Z, 2015, 'Achieving a higher performance in bilayer graphene FET - Strain engineering', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 177 - 181, http://dx.doi.org/10.1109/SISPAD.2015.7292288

Preprints | 2015

Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Spin-lattice relaxation times of single donors and donor clusters in silicon, http://dx.doi.org/10.48550/arxiv.1501.04089

Preprints | 2015

Ilatikhameneh H; Ameen T; Klimeck G; Rahman R, 2015, Universal Behavior of Strain in Quantum Dots, http://dx.doi.org/10.48550/arxiv.1509.08004

Preprints | 2015

Ilatikhameneh H; Ameen TA; Klimeck G; Appenzeller J; Rahman R, 2015, Dielectric Engineered Tunnel Field-Effect Transistor, http://dx.doi.org/10.48550/arxiv.1508.00453

Conference Papers | 2015

Ilatikhameneh H; Chen FW; Rahman R; Klimeck G, 2015, 'Electrically doped 2D material tunnel transistor', in 18th International Workshop on Computational Electronics, IWCE 2015, http://dx.doi.org/10.1109/IWCE.2015.7301966

Preprints | 2015

Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2015, Scaling Theory of Electrically Doped 2D Transistors, http://dx.doi.org/10.48550/arxiv.1504.03387

Conference Papers | 2015

Ilatikhameneh H; Klimeck G; Rahman R, 2015, '2D tunnel transistors for ultra-low power applications: Promises and challenges', in 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings, http://dx.doi.org/10.1109/E3S.2015.7336792

Preprints | 2015

Ilatikhameneh H; Klimeck G; Rahman R, 2015, Can Tunnel Transistors Scale Below 10nm?, http://dx.doi.org/10.48550/arxiv.1509.08032

Conference Papers | 2015

Ilatikhameneh H; Novakovic B; Tan Y; Salmani-Jelodar M; Kubis T; Povolotskyi M; Rahman R; Klimeck G, 2015, 'Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348606

Conference Papers | 2015

Ilatikhameneh H; Rahman R; Appenzeller J; Klimeck G, 2015, 'Electrically doped WTe2 tunnel transistors', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 270 - 272, http://dx.doi.org/10.1109/SISPAD.2015.7292311

Preprints | 2015

Ilatikhameneh H; Salazar RB; Klimeck G; Rahman R; Appenzeller J, 2015, From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling, http://dx.doi.org/10.48550/arxiv.1509.08170

Preprints | 2015

Ilatikhameneh H; Tan Y; Novakovic B; Klimeck G; Rahman R; Appenzeller J, 2015, Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials, http://dx.doi.org/10.48550/arxiv.1502.01760

Preprints | 2015

Laucht A; Muhonen JT; Mohiyaddin FA; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2015, Electrically controlling single spin qubits in a continuous microwave field, http://dx.doi.org/10.48550/arxiv.1503.05985

Conference Papers | 2015

Mohiyaddin FA; Rahman R; Kalra R; Lee S; Klimeck G; Hollenberg LCL; Yang CH; Rossi A; Dzurak AS; Morello A, 2015, 'Designing a large scale quantum computer with atomistic simulations', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348565

Preprints | 2015

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, http://dx.doi.org/10.48550/arxiv.1501.05669

Preprints | 2015

Rahman R; Verduijn J; Wang Y; Yin C; De Boo G; Klimeck G; Rogge S, 2015, Bulk and sub-surface donor bound excitons in silicon under electric fields, http://dx.doi.org/10.48550/arxiv.1510.00065

Preprints | 2015

Salazar RB; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2015, A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations, http://dx.doi.org/10.48550/arxiv.1506.00077

Preprints | 2015

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2015, Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon, http://dx.doi.org/10.48550/arxiv.1507.06125

Conference Papers | 2015

Tan YHM; Ryu H; Weber B; Lee S; Rahman R; Hollenberg LCL; Simmons MY; Klimeck G, 2015, 'Statistical modeling of ultra-scaled donor-based silicon phosphorus devices', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348589

Preprints | 2015

Tosi G; Mohiyaddin FA; Schmitt V; Tenberg S; Rahman R; Klimeck G; Morello A, 2015, Silicon quantum processor with robust long-distance qubit couplings, http://dx.doi.org/10.48550/arxiv.1509.08538

Preprints | 2015

Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon, http://dx.doi.org/10.48550/arxiv.1504.06370

Preprints | 2015

Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, Spatially resolved resonant tunneling on single atoms in silicon, http://dx.doi.org/10.48550/arxiv.1501.05042

Preprints | 2015

Wang YE; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Engineering inter-qubit exchange coupling between donor bound electrons in silicon, http://dx.doi.org/10.48550/arxiv.1507.08009

Conference Papers | 2015

Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Lee S; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2015, 'Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348550

Conference Papers | 2014

Ameen T; Ilatikhameneh H; Charles J; Hsueh Y; Chen S; Fonseca J; Povolotskyi M; Rahman R; Klimeck G, 2014, 'Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots', in Proceedings of the IEEE Conference on Nanotechnology, pp. 921 - 924, http://dx.doi.org/10.1109/NANO.2014.6968137

Preprints | 2014

Pla JJ; Mohiyaddin FA; Tan KY; Dehollain JP; Rahman R; Klimeck G; Jamieson DN; Dzurak AS; Morello A, 2014, Coherent Control of a Single Silicon-29 Nuclear Spin Qubit, http://dx.doi.org/10.48550/arxiv.1408.1347

Preprints | 2014

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, Spatially Resolving Valley Quantum Interference of a Donor in Silicon, http://dx.doi.org/10.48550/arxiv.1403.4648

Preprints | 2014

Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2014, Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory, http://dx.doi.org/10.48550/arxiv.1410.1951

Preprints | 2012

Nielsen E; Rahman R; Muller RP, 2012, A many-electron tight binding method for the analysis of quantum dot systems, http://dx.doi.org/10.48550/arxiv.1202.4931

Preprints | 2011

Lansbergen GP; Rahman R; Tettamanzi GC; Verduijn J; Hollenberg LCL; Klimeck G; Rogge S, 2011, Dopant metrology in advanced FinFETs, http://dx.doi.org/10.48550/arxiv.1111.4238

Conference Papers | 2011

Neupane MR; Rahman R; Lake RK, 2011, 'Carrier leakage in Ge/Si core-shell nanocrystals for lasers: Core size and strain effects', in Proceedings of SPIE - The International Society for Optical Engineering, http://dx.doi.org/10.1117/12.894153

Preprints | 2011

Rahman R; Lansbergen GP; Verduijn J; Tettamanzi GC; Park SH; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, http://dx.doi.org/10.48550/arxiv.1107.2701

Preprints | 2011

Rahman R; Nielsen E; Muller RP; Carroll MS, 2011, Voltage controlled exchange energies of a two electron silicon double quantum dot with and without charge defects in the dielectric, http://dx.doi.org/10.48550/arxiv.1112.4025

Preprints | 2011

Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon, http://dx.doi.org/10.48550/arxiv.1102.5311

Preprints | 2011

Witzel WM; Rahman R; Carroll MS, 2011, SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge, http://dx.doi.org/10.48550/arxiv.1110.4143

Preprints | 2010

Lansbergen GP; Rahman R; Verduijn J; Tettamanzi GC; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2010, Lifetime enhanced transport in silicon due to spin and valley blockade, http://dx.doi.org/10.48550/arxiv.1008.1381

Preprints | 2010

Rahman R; Muller RP; Levy JE; Carroll MS; Klimeck G; Greentree AD; Hollenberg LCL, 2010, Coherent electron transport by adiabatic passage in an imperfect donor chain, http://dx.doi.org/10.48550/arxiv.1008.1494

Conference Papers | 2010

Tettamanzi G; Lansbergen G; Verduijn J; Rahman R; Paul A; Lee SH; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Innovative characterization techniques for ultra-scaled FinFETs', in Proceedings of the 10th IEEE International Conference on Nanotechnology, IEEE, Korea, pp. 25 - 30, presented at 10th IEEE International Conference on Nanotechnology joint Symposium with Nano Korea 2010, Korea, 17 August 2010 - 20 August 2010, http://dx.doi.org/10.1109/NANO.2010.5698069

Preprints | 2009

Ahmed S; Kharche N; Rahman R; Usman M; Lee S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2009, Multimillion Atom Simulations with NEMO 3-D, http://dx.doi.org/10.48550/arxiv.0901.1890

Conference Papers | 2009

Lansbergen GP; Rahman R; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2009, '+Level spectrum of single gated as donors', in AIP Conference Proceedings, pp. 93 - 94, http://dx.doi.org/10.1063/1.3295570

Preprints | 2009

Park SH; Rahman R; Klimeck G; Hollenberg LCL, 2009, Mapping donor electron wave function deformations at sub-Bohr orbit resolution, http://dx.doi.org/10.48550/arxiv.0902.1515

Preprints | 2009

Rahman R; Lansbergen GP; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg LCL, 2009, Orbital Stark effect and quantum confinement transition of donors in silicon, http://dx.doi.org/10.48550/arxiv.0904.4281

Preprints | 2009

Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg LCL, 2009, Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors, http://dx.doi.org/10.48550/arxiv.0905.3200

Preprints | 2009

Rahman R; Park SH; Cole JH; Greentree AD; Muller RP; Klimeck G; Hollenberg LCL, 2009, Atomistic simulations of adiabatic coherent electron transport in triple donor systems, http://dx.doi.org/10.48550/arxiv.0903.1142

Preprints | 2009

Rahman R; Park SH; Klimeck G; Hollenberg LCL, 2009, Stark tuning of the charge states of a two-donor molecule in silicon, http://dx.doi.org/10.48550/arxiv.0907.3929

Conference Papers | 2009

Verduijn J; Lansbergen GP; Tettamanzi GC; Rahman R; Biesemans S; Colleart N; Klimeck G; L. Hollenberg LC; Rogge S, 2009, 'From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs', in Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, presented at 2009 International Conference on Solid State Devices and Materials, 06 October 2009 - 09 October 2009, http://dx.doi.org/10.7567/ssdm.2009.k-1-1

Conference Papers | 2008

Lansbergen GP; Rahman R; Wellard CJ; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Transport-based dopant metrology in advanced FinFETs', in Technical Digest - International Electron Devices Meeting, IEDM, http://dx.doi.org/10.1109/IEDM.2008.4796794

Conference Papers | 2008

Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 164 - 167, http://dx.doi.org/10.1109/ICONN.2008.4639272

Conference Papers | 2008

Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/109/1/012003

Conference Papers | 2007

Ahmed S; Usman M; Heitzinger C; Rahman R; Schliwa A; Klimeck G, 2007, 'Symmetry breaking and fine structure splitting in zincblende quantum dots: Atomistic simulations of long-range strain and piezoelectric field', in AIP Conference Proceedings, pp. 849 - 850, http://dx.doi.org/10.1063/1.2730157

Preprints | 2007

Rahman R; Wellard CJ; Bradbury FR; Prada M; Cole JH; Klimeck G; Hollenberg LCL, 2007, High precision quantum control of single donor spins in silicon, http://dx.doi.org/10.48550/arxiv.0705.2079

"Multi-nuclear spin register quantum computing in silicon", US Army Research Office, 2023-2027.
"Atomic scale control over quantum materials", ARC LIEF 2022.
“Enlightening single rare-earth atoms in scanning tunneling microscopy”, ARC Discovery Project 2021, (1/12021-31/12/2024).
“Engineering giant momentum asymmetry of quantum vacuum”, US DARPA, Dec 2020-Dec2021.
“Accelerated donor device development through atomistic modeling”, Silicon Quantum Computing Pty. Ltd. (May 2020-May 2024).
“Donor based quantum computing in silicon”, US Army Research Office, Jan 2017-May 2021.
“Designing quantum fluctuational meta-molecules for giant co-operative light-matter interaction beyond spectral boundaries”, US DARPA, Aug 2018-Feb 2020.

My Research Supervision

Research Associates:

Dr. Yuling Hsueh (Lecturer)

Dr. Md. Serajum Monir

Dr. Mushita Masud Munia

PhD Students:

Pratik Chowdhury

Hannan Mousavi

Sarinle Yusuf

Priyangana Chatterjee

Alumni:

Dr. Hongyang Ma

Dr. Edyta Osika (Postdoc)

Dr. Abu Mohammed Saffat-ee Huq (PhD)

Dr. Md. Serajum Monir (PhD)

Dr. Mushita Masud Munia (PhD)

Angus Worrall (Honours)

Zachary Kembrey (Honours)

My Teaching

First Year Physics: Mechanics, Thermal Physics and Waves: Physics 1121/1131 (1A)

Experimental and Computational Physics 3112

Quantum mechanics of solids Physics 3118

Past:

Electromagnetism Physics 2114

First Year Lab Director

Follow

Professor Rajib Rahman

Follow me