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Associate Professor Rajib Rahman
Associate Professor

Associate Professor Rajib Rahman

PhD, Purdue University, USA, 2009.

Masters, Purdue University, USA, 2005.

Bachelor of Arts, Gettysburg College, USA, 2002.

Science
School of Physics

I am a computational physicist who develops advanced simulation techniques to understand quantum materials and devices. My research is interdisciplinary in scope and spreads over condensed matter physics, electrical engineering, material science, and computational science. My objective is to develop future electronics and computing technologies utilizing novel quantum phenomena in condensed matter. Solid-state quantum computing is one of my active areas of research. I have developed computational tools that can simulate various aspects of semiconductor qubits such as electronic structure, response to electric and magnetic fields, many-body interactions, and spin-lattice and spin-spin interactions. I am also interested in emerging 2D and topological materials for low energy electronics. 
Phone
+61 2 9065 1880
E-mail
rajib.rahman@unsw.edu.au
Location
Old Main Bldg, G57D
  • Book Chapters | 2015
    Ahmed S; Kharche N; Rahman R; Usman M; Lee S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2015, 'Multimillion Atom Simulation of Electronic and Optical Properties of Nanoscale Devices Using NEMO 3-D', in Encyclopedia of Complexity and Systems Science, Springer Berlin Heidelberg, pp. 1 - 69, http://dx.doi.org/10.1007/978-3-642-27737-5_343-2
    Book Chapters | 2013
    Rahman R; Hollenberg LCL; Klimeck G, 2013, 'Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon', in Prati E; Shinada T (ed.), SINGLE-ATOM NANOELECTRONICS, PAN STANFORD PUBLISHING PTE LTD, pp. 41 - 59, http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000328280800004&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
    Book Chapters | 2013
    Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10
    Book Chapters | 2012
    2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15
    Book Chapters | 2012
    Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034
    Book Chapters | 2012
    Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034
    Book Chapters | 2009
    Ahmed* S; Kharche* N; Rahman* R; Usman* M; Lee* S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2009, 'Multimillion Atom Simulations with Nemo3D', in Encyclopedia of Complexity and Systems Science, Springer New York, pp. 5745 - 5783, http://dx.doi.org/10.1007/978-0-387-30440-3_343
  • Journal articles | 2023
    Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)', Advanced Materials, vol. 35, pp. 2370039 - 2370039, http://dx.doi.org/10.1002/adma.202370039
    Journal articles | 2022
    Cao C; Zhong Y; Chandula Wasalathilake K; Tadé MO; Xu X; Rabiee H; Roknuzzaman M; Rahman R; Shao Z, 2022, 'A low resistance and stable lithium-garnet electrolyte interface enabled by a multifunctional anode additive for solid-state lithium batteries', Journal of Materials Chemistry A, vol. 10, pp. 2519 - 2527, http://dx.doi.org/10.1039/d1ta07804f
    Journal articles | 2022
    Gardin A; Monaghan RD; Whittaker T; Rahman R; Tettamanzi GC, 2022, 'Nonadiabatic quantum control of valley states in silicon', Physical Review B, vol. 105, http://dx.doi.org/10.1103/PhysRevB.105.075406
    Journal articles | 2022
    Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2022, 'The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors', Advanced Materials, pp. e2201625, http://dx.doi.org/10.1002/adma.202201625
    Journal articles | 2022
    Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, vol. 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006
    Journal articles | 2022
    Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach', Communications Physics, vol. 5, http://dx.doi.org/10.1038/s42005-022-00948-6
    Journal articles | 2022
    Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Author Correction: Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach (Communications Physics, (2022), 5, 1, (165), 10.1038/s42005-022-00948-6)', Communications Physics, vol. 5, http://dx.doi.org/10.1038/s42005-022-01014-x
    Journal articles | 2022
    McJunkin T; Harpt B; Feng Y; Losert MP; Rahman R; Dodson JP; Wolfe MA; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Joynt R; Eriksson MA, 2022, 'SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits', Nature Communications, vol. 13, http://dx.doi.org/10.1038/s41467-022-35510-z
    Journal articles | 2022
    Osika EN; Gorman SK; Monir S; Hsueh YL; Borscz M; Geng H; Thorgrimsson B; Simmons MY; Rahman R, 2022, 'Shelving and latching spin readout in atom qubits in silicon', Physical Review B, vol. 106, http://dx.doi.org/10.1103/PhysRevB.106.075418
    Journal articles | 2022
    Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, vol. 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007
    Journal articles | 2022
    Paquelet Wuetz B; Losert MP; Koelling S; Stehouwer LEA; Zwerver AMJ; Philips SGJ; Mądzik MT; Xue X; Zheng G; Lodari M; Amitonov SV; Samkharadze N; Sammak A; Vandersypen LMK; Rahman R; Coppersmith SN; Moutanabbir O; Friesen M; Scappucci G, 2022, 'Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots', Nature Communications, vol. 13, pp. 7730, http://dx.doi.org/10.1038/s41467-022-35458-0
    Journal articles | 2022
    Poursoti Z; Sun W; Bharadwaj S; Malac M; Iyer S; Khosravi F; Cui K; Qi L; Nazemifard N; Jagannath R; Rahman R; Jacob Z, 2022, 'Deep ultra-violet plasmonics: exploiting momentum-resolved electron energy loss spectroscopy to probe germanium', Optics Express, vol. 30, pp. 12630 - 12638, http://dx.doi.org/10.1364/OE.447017
    Journal articles | 2022
    Sarkar A; Hochstetter J; Kha A; Hu X; Simmons MY; Rahman R; Culcer D, 2022, 'Optimisation of electron spin qubits in electrically driven multi-donor quantum dots', npj Quantum Information, vol. 8, http://dx.doi.org/10.1038/s41534-022-00646-9
    Journal articles | 2022
    Tankasala A; Voisin B; Kembrey Z; Salfi J; Hsueh YL; Osika EN; Rogge S; Rahman R, 2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, vol. 105, http://dx.doi.org/10.1103/PhysRevB.105.155158
    Journal articles | 2022
    Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', Materials for Quantum Technology, vol. 2, pp. 025002 - 025002, http://dx.doi.org/10.1088/2633-4356/ac5d1d
    Journal articles | 2021
    Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2021, 'Exchange Coupling in a Linear Chain of Three Quantum-Dot Spin Qubits in Silicon', Nano Letters, vol. 21, pp. 1517 - 1522, http://dx.doi.org/10.1021/acs.nanolett.0c04771
    Journal articles | 2021
    Gyure MF; Kiselev AA; Ross RS; Rahman R; Van de Walle CG, 2021, 'Materials and device simulations for silicon qubit design and optimization', MRS Bulletin, vol. 46, pp. 634 - 641, http://dx.doi.org/10.1557/s43577-021-00140-1
    Journal articles | 2021
    Voisin B; Salfi J; Rahman R; Rogge S, 2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, vol. 46, pp. 616 - 622, http://dx.doi.org/10.1557/s43577-021-00136-x
    Journal articles | 2020
    Mazzola F; Chen CY; Rahman R; Zhu XG; Polley CM; Balasubramanian T; King PDC; Hofmann P; Miwa JA; Wells JW, 2020, 'The sub-band structure of atomically sharp dopant profiles in silicon', npj Quantum Materials, vol. 5, http://dx.doi.org/10.1038/s41535-020-0237-1
    Journal articles | 2020
    Sengupta P; Khandekar C; Van Mechelen T; Rahman R; Jacob Z, 2020, 'Electron g -factor engineering for nonreciprocal spin photonics', Physical Review B, vol. 101, http://dx.doi.org/10.1103/PhysRevB.101.035412
    Journal articles | 2020
    Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, vol. 11, pp. 6124, http://dx.doi.org/10.1038/s41467-020-19835-1
    Journal articles | 2019
    Ameen TA; Ilatikhameneh H; Fay P; Seabaugh A; Rahman R; Klimeck G, 2019, 'Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs', IEEE Transactions on Electron Devices, vol. 66, pp. 736 - 742, http://dx.doi.org/10.1109/TED.2018.2877753
    Journal articles | 2019
    Nakamura J; Fallahi S; Sahasrabudhe H; Rahman R; Liang S; Gardner GC; Manfra MJ, 2019, 'Aharonov–Bohm interference of fractional quantum Hall edge modes', Nature Physics, vol. 15, pp. 563 - 569, http://dx.doi.org/10.1038/s41567-019-0441-8
    Journal articles | 2019
    Pang CS; Chen CY; Ameen T; Zhang S; Ilatikhameneh H; Rahman R; Klimeck G; Chen Z, 2019, 'WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing', Small, vol. 15, http://dx.doi.org/10.1002/smll.201902770
    Journal articles | 2019
    Wu P; Ameen T; Zhang H; Bendersky LA; Ilatikhameneh H; Klimeck G; Rahman R; Davydov AV; Appenzeller J, 2019, 'Complementary Black Phosphorus Tunneling Field-Effect Transistors', ACS Nano, vol. 13, pp. 377 - 385, http://dx.doi.org/10.1021/acsnano.8b06441
    Journal articles | 2018
    Ameen TA; Ilatikhameneh H; Tankasala A; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Rahman R; Klimeck G, 2018, 'Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot', Beilstein Journal of Nanotechnology, vol. 9, pp. 1075 - 1084, http://dx.doi.org/10.3762/bjnano.9.99
    Journal articles | 2018
    Chen CY; Ameen TA; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2018, 'Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs', IEEE Transactions on Electron Devices, vol. 65, pp. 4614 - 4621, http://dx.doi.org/10.1109/TED.2018.2862408
    Journal articles | 2018
    Chen F; Ilatikhameneh H; Tan Y; Klimeck G; Rahman R, 2018, 'Switching Mechanism and the Scalability of Vertical-TFETs', IEEE Transactions on Electron Devices, vol. 65, pp. 3065 - 3068, http://dx.doi.org/10.1109/TED.2018.2831688
    Journal articles | 2018
    Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Sahasrabudhe H; Klimeck G; Morello A; Dzurak AS; Rahman R, 2018, 'Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability', Physical Review B, vol. 97, http://dx.doi.org/10.1103/PhysRevB.97.241401
    Journal articles | 2018
    Ferdous R; Kawakami E; Scarlino P; Nowak MP; Ward DR; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Eriksson MA; Vandersypen LMK; Rahman R, 2018, 'Valley dependent anisotropic spin splitting in silicon quantum dots', npj Quantum Information, vol. 4, http://dx.doi.org/10.1038/s41534-018-0075-1
    Journal articles | 2018
    Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, vol. 4, http://dx.doi.org/10.1126/sciadv.aaq1459
    Journal articles | 2018
    Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2018, 'Dramatic impact of dimensionality on the electrostatics of P-N junctions and its sensing and switching applications', IEEE Transactions on Nanotechnology, vol. 17, pp. 293 - 298, http://dx.doi.org/10.1109/TNANO.2018.2799960
    Journal articles | 2018
    Ilatikhameneh H; Ameen TA; Chen C; Klimeck G; Rahman R, 2018, 'Sensitivity Challenge of Steep Transistors', IEEE Transactions on Electron Devices, vol. 65, pp. 1633 - 1639, http://dx.doi.org/10.1109/TED.2018.2808040
    Journal articles | 2018
    Sahasrabudhe H; Novakovic B; Nakamura J; Fallahi S; Povolotskyi M; Klimeck G; Rahman R; Manfra MJ, 2018, 'Optimization of edge state velocity in the integer quantum Hall regime', Physical Review B, vol. 97, http://dx.doi.org/10.1103/PhysRevB.97.085302
    Journal articles | 2018
    Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, vol. 8, http://dx.doi.org/10.1103/PhysRevX.8.031049
    Journal articles | 2018
    Shekhar P; Pendharker S; Sahasrabudhe H; Vick D; Malac M; Rahman R; Jacob Z, 2018, 'Extreme ultraviolet plasmonics and Cherenkov radiation in silicon', Optica, vol. 5, pp. 1590 - 1596, http://dx.doi.org/10.1364/OPTICA.5.001590
    Journal articles | 2018
    Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, vol. 97, http://dx.doi.org/10.1103/PhysRevB.97.195301
    Journal articles | 2018
    Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', npj Quantum Information, vol. 4, http://dx.doi.org/10.1038/s41534-018-0111-1
    Journal articles | 2017
    Ameen TA; Ilatikhameneh H; Huang JZ; Povolotskyi M; Rahman R; Klimeck G, 2017, 'Combination of Equilibrium and Nonequilibrium Carrier Statistics into an Atomistic Quantum Transport Model for Tunneling Heterojunctions', IEEE Transactions on Electron Devices, vol. 64, pp. 2512 - 2518, http://dx.doi.org/10.1109/TED.2017.2690626
    Journal articles | 2017
    Chen FW; Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2017, 'Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene', IEEE Electron Device Letters, vol. 38, pp. 130 - 133, http://dx.doi.org/10.1109/LED.2016.2627538
    Journal articles | 2017
    Huang JZ; Long P; Povolotskyi M; Ilatikhameneh H; Ameen TA; Rahman R; Rodwell MJW; Klimeck G, 2017, 'A Multiscale Modeling of Triple-Heterojunction Tunneling FETs', IEEE Transactions on Electron Devices, vol. 64, pp. 2728 - 2735, http://dx.doi.org/10.1109/TED.2017.2690669
    Journal articles | 2017
    Rahman R; Ilatikhameneh H; Ameen T; Klimeck G, 2017, '(Invited) Energy Efficient Transistors with 2D Materials', ECS Meeting Abstracts, vol. MA2017-01, pp. 990 - 990, http://dx.doi.org/10.1149/ma2017-01/16/990
    Journal articles | 2017
    Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, vol. 3, http://dx.doi.org/10.1126/sciadv.1602811
    Journal articles | 2017
    Zheng C; Zhang Q; Weber B; Ilatikhameneh H; Chen F; Sahasrabudhe H; Rahman R; Li S; Chen Z; Hellerstedt J; Zhang Y; Duan WH; Bao Q; Fuhrer MS, 2017, 'Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures', ACS Nano, vol. 11, pp. 2785 - 2793, http://dx.doi.org/10.1021/acsnano.6b07832
    Journal articles | 2016
    Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R, 2016, 'Few-layer phosphorene: An ideal 2D material for tunnel transistors', Scientific Reports, vol. 6, http://dx.doi.org/10.1038/srep28515
    Journal articles | 2016
    Chen FW; Ilatikhameneh H; Klimeck G; Chen Z; Rahman R, 2016, 'Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET', IEEE Journal of the Electron Devices Society, vol. 4, pp. 124 - 128, http://dx.doi.org/10.1109/JEDS.2016.2539919
    Journal articles | 2016
    Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R, 2016, 'Saving Moore's Law Down to 1 nm Channels with Anisotropic Effective Mass', Scientific Reports, vol. 6, http://dx.doi.org/10.1038/srep31501
    Journal articles | 2016
    Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2016, 'Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots', IEEE Journal of Quantum Electronics, vol. 52, http://dx.doi.org/10.1109/JQE.2016.2573959
    Journal articles | 2016
    Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2016, 'Design rules for high performance tunnel transistors from 2-D materials', IEEE Journal of the Electron Devices Society, vol. 4, pp. 260 - 265, http://dx.doi.org/10.1109/JEDS.2016.2568219
    Journal articles | 2016
    Ilatikhameneh H; Klimeck G; Rahman R, 2016, 'Can Homojunction Tunnel FETs Scale below 10 nm?', IEEE Electron Device Letters, vol. 37, pp. 115 - 118, http://dx.doi.org/10.1109/LED.2015.2501820
    Journal articles | 2016
    Ilatikhameneh H; Salazar RB; Klimeck G; Rahman R; Appenzeller J, 2016, 'From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling', IEEE Transactions on Electron Devices, vol. 63, pp. 2871 - 2878, http://dx.doi.org/10.1109/TED.2016.2565582
    Journal articles | 2016
    Mohiyaddin FA; Kalra R; Laucht A; Rahman R; Klimeck G; Morello A, 2016, 'Transport of spin qubits with donor chains under realistic experimental conditions', Physical Review B, vol. 94, http://dx.doi.org/10.1103/PhysRevB.94.045314
    Journal articles | 2016
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, vol. 7, http://dx.doi.org/10.1038/ncomms11342
    Journal articles | 2016
    Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, vol. 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83
    Journal articles | 2016
    Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques (vol 6, 31830, 2016)', SCIENTIFIC REPORTS, vol. 6, http://dx.doi.org/10.1038/srep38120
    Journal articles | 2016
    Wang Y; Chen CY; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques', Scientific Reports, vol. 6, http://dx.doi.org/10.1038/srep31830
    Journal articles | 2016
    Wang Y; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2016, 'Highly tunable exchange in donor qubits in silicon', npj Quantum Information, vol. 2, http://dx.doi.org/10.1038/npjqi.2016.8
    Journal articles | 2015
    Chu T; Ilatikhameneh H; Klimeck G; Rahman R; Chen Z, 2015, 'Electrically Tunable Bandgaps in Bilayer MoS2', Nano Letters, vol. 15, pp. 8000 - 8007, http://dx.doi.org/10.1021/acs.nanolett.5b03218
    Journal articles | 2015
    Ilatikhameneh H; Ameen TA; Klimeck G; Appenzeller J; Rahman R, 2015, 'Dielectric Engineered Tunnel Field-Effect Transistor', IEEE Electron Device Letters, vol. 36, pp. 1097 - 1100, http://dx.doi.org/10.1109/LED.2015.2474147
    Journal articles | 2015
    Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2015, 'Scaling Theory of Electrically Doped 2D Transistors', IEEE Electron Device Letters, vol. 36, pp. 726 - 728, http://dx.doi.org/10.1109/LED.2015.2436356
    Journal articles | 2015
    Ilatikhameneh H; Tan Y; Novakovic B; Klimeck G; Rahman R; Appenzeller J, 2015, 'Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials', IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 1, pp. 12 - 18, http://dx.doi.org/10.1109/JXCDC.2015.2423096
    Journal articles | 2015
    Laucht A; Muhonen J; Mohiyaddin F; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak A; Morello A, 2015, 'Electrically controlling single-spin qubits in a continuous microwave field', Science Advances, vol. 1, http://dx.doi.org/10.1126/sciadv.1500022
    Journal articles | 2015
    Li W; Sharmin S; Ilatikhameneh H; Rahman R; Lu Y; Wang J; Yan X; Seabaugh A; Klimeck G; Jena D; Fay P, 2015, 'Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors', IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 1, pp. 28 - 34, http://dx.doi.org/10.1109/JXCDC.2015.2426433
    Journal articles | 2015
    Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, vol. 106, http://dx.doi.org/10.1063/1.4921640
    Journal articles | 2015
    Neupane MR; Rahman R; Lake RK, 2015, 'Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals', Physical Chemistry Chemical Physics, vol. 17, pp. 2484 - 2493, http://dx.doi.org/10.1039/c4cp03711a
    Journal articles | 2015
    Salazar RB; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2015, 'A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations', Journal of Applied Physics, vol. 118, http://dx.doi.org/10.1063/1.4934682
    Journal articles | 2015
    Tosi G; Mohiyaddin FA; Tenberg S; Rahman R; Klimeck G; Morello A, 2015, 'Silicon quantum processor with robust long-distance qubit couplings', arxiv, vol. 8, http://dx.doi.org/10.1038/s41467-017-00378-x
    Journal articles | 2015
    Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, vol. 91, http://dx.doi.org/10.1103/PhysRevB.91.245209
    Journal articles | 2015
    Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, vol. 27, http://dx.doi.org/10.1088/0953-8984/27/15/154207
    Journal articles | 2015
    Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, vol. 27, http://dx.doi.org/10.1088/0953-8984/27/15/154203
    Journal articles | 2014
    Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.246406
    Journal articles | 2014
    Pla JJ; Mohiyaddin FA; Tan KY; Dehollain JP; Rahman R; Klimeck G; Jamieson DN; Dzurak AS; Morello A, 2014, 'Coherent control of a single Si 29 nuclear spin qubit', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.246801
    Journal articles | 2014
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, vol. 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941
    Journal articles | 2014
    Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2014, 'Spin blockade and exchange in Coulomb-confined silicon double quantum dots', Nature Nanotechnology, vol. 9, pp. 430 - 435, http://dx.doi.org/10.1038/nnano.2014.63
    Journal articles | 2013
    Buch H; Mahapatra S; Rahman R; Morello A; Simmons MY, 2013, 'Spin readout and addressability of phosphorus-donor clusters in silicon', Nature communications, vol. 4, pp. Article number: 2017, http://dx.doi.org/10.1038/ncomms3017
    Journal articles | 2013
    Mohiyaddin FA; Rahman R; Kalra R; Klimeck ; Hollenberg ; Pla JJ; Dzurak AS; Morello A, 2013, 'Noninvasive spatial metrology of single-atom devices', Nano Letters, vol. 13, pp. 1903 - 1909, http://dx.doi.org/10.1021/nl303863s
    Journal articles | 2013
    Nguyen KT; Lilly MP; Nielsen E; Bishop N; Rahman R; Young R; Wendt J; Dominguez J; Pluym T; Stevens J; Lu TM; Muller R; Carroll MS, 2013, 'Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot', Nano Letters, vol. 13, pp. 5785 - 5790, http://dx.doi.org/10.1021/nl4020759
    Journal articles | 2013
    Tettamanzi G, 2013, 'Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade (vol 107, 136602, 2011)', Physical Review Letters, vol. 110, pp. 49901 - 049901, http://dx.doi.org/10.1103/PhysRevLett.110.049901
    Journal articles | 2012
    Neupane MR; Lake RK; Rahman R, 2012, 'Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores', Journal of Applied Physics, vol. 112, http://dx.doi.org/10.1063/1.4739715
    Journal articles | 2012
    Nielsen E; Rahman R; Muller RP, 2012, 'A many-electron tight binding method for the analysis of quantum dot systems', Journal of Applied Physics, vol. 112, http://dx.doi.org/10.1063/1.4759256
    Journal articles | 2012
    Rahman R; Nielsen E; Muller RP; Carroll MS, 2012, 'Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric', Physical Review B - Condensed Matter and Materials Physics, vol. 85, http://dx.doi.org/10.1103/PhysRevB.85.125423
    Journal articles | 2012
    Witzel WM; Rahman R; Carroll MS, 2012, 'Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge', Physical Review B - Condensed Matter and Materials Physics, vol. 85, http://dx.doi.org/10.1103/PhysRevB.85.205312
    Journal articles | 2011
    Lansbergen G; Rahman R; Verduijn A; Tettamanzi G; Collaert N; Biesemans S; Klimeck G; Rogge S; Hollenberg L, 2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, vol. 107, pp. 136602-1 - 136602-5, http://dx.doi.org/10.1103/PhysRevLett.107.136602
    Journal articles | 2011
    Neupane MR; Lake RK; Rahman R, 2011, 'Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals', Journal of Applied Physics, vol. 110, http://dx.doi.org/10.1063/1.3642970
    Journal articles | 2011
    Rahman ; Lansbergen ; Verduijn A; Tettamanzi G; Park ; Collaert ; Biesemans ; Klimeck ; Hollenberg ; Rogge S, 2011, 'Electric field reduced charging energies and two-electron bound excited states of single donors in silicon', Physical Review B, vol. 84, pp. 115458-1 - 115458-7, http://dx.doi.org/10.1103/PhysRevB.84.115428
    Journal articles | 2011
    Rahman R; Park SH; Klimeck G; Hollenberg LCL, 2011, 'Stark tuning of the charge states of a two-donor molecule in silicon', Nanotechnology, vol. 22, http://dx.doi.org/10.1088/0957-4484/22/22/225202
    Journal articles | 2011
    Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, vol. 83, http://dx.doi.org/10.1103/PhysRevB.83.239904
    Journal articles | 2011
    Rahman R; Verduijn JA; Kharche N; Lansbergen G; Klimeck ; Hollenberg ; Rogge S, 2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, vol. 83, pp. 195323-1 - 195323-5, http://dx.doi.org/10.1103/PhysRevB.83.195323
    Journal articles | 2010
    Rahman R; Muller RP; Levy JE; Carroll MS; Klimeck G; Greentree AD; Hollenberg LCL, 2010, 'Coherent electron transport by adiabatic passage in an imperfect donor chain', Physical Review B - Condensed Matter and Materials Physics, vol. 82, http://dx.doi.org/10.1103/PhysRevB.82.155315
    Journal articles | 2009
    Park SH; Rahman R; Klimeck G; Hollenberg LCL, 2009, 'Mapping donor electron wave function deformations at a sub-bohr orbit resolution', Physical Review Letters, vol. 103, http://dx.doi.org/10.1103/PhysRevLett.103.106802
    Journal articles | 2009
    Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, vol. 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314
    Journal articles | 2009
    Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg L, 2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, vol. 80, pp. 155301-1 - 155301-5, http://dx.doi.org/10.1103/PhysRevB.80.155301
    Journal articles | 2009
    Rahman R; Park SH; Cole JH; Greentree AD; Muller RP; Klimeck G; Hollenberg LCL, 2009, 'Atomistic simulations of adiabatic coherent electron transport in triple donor systems', Physical Review B - Condensed Matter and Materials Physics, vol. 80, http://dx.doi.org/10.1103/PhysRevB.80.035302
    Journal articles | 2008
    Lansbergen G; Rahman R; Wellard C; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, vol. 1067, pp. 12 - 17, http://dx.doi.org/10.1557/proc-1067-b03-07
    Journal articles | 2008
    Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, vol. 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994
    Journal articles | 2008
    Lansbergen GP; Rahman R; Wellard CJ; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, vol. 1117, pp. 1 - 6, http://dx.doi.org/10.1557/proc-1117-j01-03
    Journal articles | 2008
    Naumov M; Lee S; Haley B; Bae H; Clark S; Rahman R; Ryu H; Saied F; Klimeck G, 2008, 'Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D', Journal of Computational Electronics, vol. 7, pp. 297 - 300, http://dx.doi.org/10.1007/s10825-008-0223-5
    Journal articles | 2007
    Klimeck G; Ahmed SS; Bae H; Clark S; Haley B; Lee S; Naumov M; Ryu H; Saied F; Prada M; Korkusinski M; Boykin TB; Rahman R, 2007, 'Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks', IEEE Transactions on Electron Devices, vol. 54, pp. 2079 - 2089, http://dx.doi.org/10.1109/TED.2007.902879
    Journal articles | 2007
    Rahman R; Wellard CJ; Bradbury FR; Prada M; Cole JH; Klimeck G; Hollenberg LCL, 2007, 'High precision quantum control of single donor spins in silicon', Physical Review Letters, vol. 99, http://dx.doi.org/10.1103/PhysRevLett.99.036403
  • Preprints | 2022
    Sarkar A; Hochstetter J; Kha A; Hu X; Simmons MY; Rahman R; Culcer D, 2022, Optimisation of electrically-driven multi-donor quantum dot qubits, http://dx.doi.org/10.48550/arxiv.2203.16553
    Preprints | 2022
    Sun W; Bharadwaj S; Yang L-P; Hsueh Y-L; Wang Y; Jiao D; Rahman R; Jacob Z, 2022, Limits to two-spin-qubit gate fidelity from thermal and vacuum fluctuations, http://dx.doi.org/10.48550/arxiv.2207.09441
    Preprints | 2021
    Gardin A; Monaghan RD; Whittaker T; Rahman R; Tettamanzi GC, 2021, Non-adiabatic quantum control of valley states in silicon, http://dx.doi.org/10.48550/arxiv.2105.13668
    Preprints | 2021
    Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, http://dx.doi.org/10.48550/arxiv.2105.02906
    Preprints | 2021
    McJunkin T; Harpt B; Feng Y; Losert MP; Rahman R; Dodson JP; Wolfe MA; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Joynt R; Eriksson MA, 2021, SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits, http://dx.doi.org/10.48550/arxiv.2112.09765
    Preprints | 2021
    Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, http://dx.doi.org/10.48550/arxiv.2105.02904
    Preprints | 2021
    Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2021, Valley interference and spin exchange at the atomic scale in silicon, http://dx.doi.org/10.48550/arxiv.2105.10931
    Preprints | 2021
    Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2021, Valley population of donor states in highly strained silicon, http://dx.doi.org/10.48550/arxiv.2109.08540
    Preprints | 2021
    Voisin B; Salfi J; Rahman R; Rogge S, 2021, Novel characterisation of dopant-based qubits, http://dx.doi.org/10.48550/arxiv.2107.00784
    Preprints | 2021
    Wuetz BP; Losert MP; Koelling S; Stehouwer LEA; Zwerver A-MJ; Philips SGJ; Mądzik MT; Xue X; Zheng G; Lodari M; Amitonov SV; Samkharadze N; Sammak A; Vandersypen LMK; Rahman R; Coppersmith SN; Moutanabbir O; Friesen M; Scappucci G, 2021, Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots, http://dx.doi.org/10.48550/arxiv.2112.09606
    Preprints | 2020
    Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2020, Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon, http://dx.doi.org/10.48550/arxiv.2004.07666
    Preprints | 2019
    Mazzola F; Chen C-Y; Rahman R; Zhu X-G; Polley CM; Balasubramanian T; King PDC; Hofmann P; Miwa JA; Wells JW, 2019, The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon, http://dx.doi.org/10.48550/arxiv.1904.10929
    Preprints | 2019
    Nakamura J; Fallahi S; Sahasrabudhe H; Rahman R; Liang S; Gardner GC; Manfra MJ, 2019, Aharonov-Bohm interference of fractional quantum Hall edge modes, http://dx.doi.org/10.48550/arxiv.1901.08452
    Preprints | 2019
    Sengupta P; Khandekar C; Van Mechelen T; Rahman R; Jacob Z, 2019, Electron g-factor engineering for non-reciprocal spin photonics, http://dx.doi.org/10.48550/arxiv.1908.06393
    Preprints | 2018
    Chen C-Y; Ameen TA; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2018, Channel thickness optimization for ultra thin and 2D chemically doped TFETs, http://dx.doi.org/10.48550/arxiv.1804.11034
    Preprints | 2018
    Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, Addressable electron spin resonance using donors and donor molecules in silicon, http://dx.doi.org/10.48550/arxiv.1807.10290
    Preprints | 2017
    Ameen TA; Ilatikhameneh H; Huang JZ; Povolotskyi M; Rahman R; Klimeck G, 2017, Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions, http://dx.doi.org/10.48550/arxiv.1702.01248
    Preprints | 2017
    Chen F; Ilatikhameneh H; Tan Y; Klimeck G; Rahman R, 2017, Switching Mechanism and the Scalability of vertical-TFETs, http://dx.doi.org/10.48550/arxiv.1711.01832
    Conference Papers | 2017
    Chen F; Ilatikhameneh H; Tan Y; Valencia D; Klimeck G; Rahman R, 2017, 'Transport in vertically stacked hetero-structures from 2D materials', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/864/1/012053
    Conference Papers | 2017
    Fay P; Li W; Digiovanni D; Cao L; Ilatikhameneh H; Chen F; Ameen T; Rahman R; Klimeck G; Lund C; Keller S; Islam SM; Chaney A; Cho Y; Jena D, 2017, 'III-N heterostructure devices for low-power logic', in China Semiconductor Technology International Conference 2017, CSTIC 2017, http://dx.doi.org/10.1109/CSTIC.2017.7919743
    Preprints | 2017
    Ferdous R; Chan KW; Veldhorst M; Hwang JCC; Yang CH; Klimeck G; Morello A; Dzurak AS; Rahman R, 2017, Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability, http://dx.doi.org/10.48550/arxiv.1703.03840
    Preprints | 2017
    Ferdous R; Kawakami E; Scarlino P; Nowak MP; Ward DR; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Eriksson MA; Vandersypen LMK; Rahman R, 2017, Valley dependent anisotropic spin splitting in silicon quantum dots, http://dx.doi.org/10.48550/arxiv.1702.06210
    Preprints | 2017
    Huang JZ; Long P; Povolotskyi M; Ilatikhameneh H; Ameen T; Rahman R; Rodwell MJW; Klimeck G, 2017, A Multiscale Modeling of Triple-Heterojunction Tunneling FETs, http://dx.doi.org/10.48550/arxiv.1701.00480
    Preprints | 2017
    Ilatikhameneh H; Ameen T; Chen C; Klimeck G; Rahman R, 2017, Sensitivity Challenge of Steep Transistors, http://dx.doi.org/10.48550/arxiv.1709.06276
    Preprints | 2017
    Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2017, Dramatic Impact of Dimensionality on the Electrostatics of PN Junctions, http://dx.doi.org/10.48550/arxiv.1704.05488
    Conference Papers | 2017
    Nishat MRK; Tankasala A; Kharche N; Rahman R; Ahmed SS, 2017, 'Multiscale-multiphysics modeling of nonpolar InGaN LEDs', in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017, pp. 85 - 88, http://dx.doi.org/10.1109/NANO.2017.8117449
    Preprints | 2017
    Sahasrabudhe H; Novakovic B; Nakamura J; Fallahi S; Povolotskyi M; Klimeck G; Rahman R; Manfra MJ, 2017, Optimization of edge state velocity in the integer quantum Hall regime, http://dx.doi.org/10.48550/arxiv.1705.07005
    Preprints | 2017
    Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, http://dx.doi.org/10.48550/arxiv.1706.09261
    Preprints | 2017
    Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, http://dx.doi.org/10.48550/arxiv.1703.04175
    Conference Papers | 2017
    Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Electron spin relaxation of single phosphorus donors and donor clusters in atomically engineered silicon devices', in 2017 Silicon Nanoelectronics Workshop, SNW 2017, pp. 23 - 24, http://dx.doi.org/10.23919/SNW.2017.8242278
    Preprints | 2016
    Chen F; Ilatikhameneh H; Tan Y; Valencia D; Klimeck G; Rahman R, 2016, Transport in vertically stacked hetero-structures from 2D materials, http://dx.doi.org/10.48550/arxiv.1608.05057
    Preprints | 2016
    Chen FW; Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2016, Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene, http://dx.doi.org/10.48550/arxiv.1607.04065
    Conference Papers | 2016
    Fay P; Li W; Cao L; Pourang K; Islam SM; Lund C; Saima S; Ilatikhameneh H; Amin T; Huang J; Rahman R; Jena D; Keller S; Klimeck G, 2016, 'Novel III-N heterostructure devices for low-power logic and more', in 16th International Conference on Nanotechnology - IEEE NANO 2016, pp. 767 - 769, http://dx.doi.org/10.1109/NANO.2016.7751336
    Conference Papers | 2016
    Huang JZ; Long P; Ilatikhameneh H; Ameen T; Rahman R; Povolotskyi M; Rodwell MJW; Klimeck G, 2016, 'Multiscale Transport Simulation of Nanoelectronic Devices with NEMO5', in 2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS), IEEE, PEOPLES R CHINA, Shanghai, pp. 914 - 914, presented at Progress in Electromagnetic Research Symposium (PIERS), PEOPLES R CHINA, Shanghai, 08 August 2016 - 11 August 2016, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000400013900313&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
    Preprints | 2016
    Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2016, Impact of Dimensionality on PN Junctions, http://dx.doi.org/10.48550/arxiv.1611.08784
    Preprints | 2016
    Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R, 2016, Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass, http://dx.doi.org/10.48550/arxiv.1605.03979
    Preprints | 2016
    Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2016, Design Rules for High Performance Tunnel Transistors from 2D Materials, http://dx.doi.org/10.48550/arxiv.1603.09402
    Conference Papers | 2016
    Long P; Huang JZ; Povolotskyi M; Verreck D; Klimeck G; Rodwell MJW, 2016, 'High-current InP-based triple heterojunction tunnel transistors', in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), IEEE, presented at 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)], 26 June 2016 - 30 June 2016, http://dx.doi.org/10.1109/iciprm.2016.7528592
    Conference Papers | 2016
    Long P; Povolotskyi M; Huang JZ; Ilatikhameneh H; Ameen T; Rahman R; Kubis T; Klimeck G; Rodwell MJW, 2016, 'Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors', in Device Research Conference - Conference Digest, DRC, http://dx.doi.org/10.1109/DRC.2016.7548424
    Preprints | 2016
    Mohiyaddin FA; Kalra R; Laucht A; Rahman R; Klimeck G; Morello A, 2016, Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions, http://dx.doi.org/10.48550/arxiv.1602.07058
    Preprints | 2016
    Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LLC, 2016, Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision, http://dx.doi.org/10.48550/arxiv.1601.02326
    Preprints | 2016
    Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, Characterizing Si:P quantum dot qubits with spin resonance techniques, http://dx.doi.org/10.48550/arxiv.1607.01086
    Preprints | 2015
    Ameen T; Ilatikhameneh H; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Wenner BR; Rahman R; Klimeck G, 2015, Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots, http://dx.doi.org/10.48550/arxiv.1502.07726
    Preprints | 2015
    Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R, 2015, Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors, http://dx.doi.org/10.48550/arxiv.1512.05021
    Conference Papers | 2015
    Ameen TA; Ilatikhameneh H; Valencia D; Rahman R; Klimeck G, 2015, 'Engineering the optical transitions of self-assembled quantum dots', in 18th International Workshop on Computational Electronics, IWCE 2015, http://dx.doi.org/10.1109/IWCE.2015.7301940
    Preprints | 2015
    Chen FW; Ilatikhameneh H; Klimeck G; Chen Z; Rahman R, 2015, Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET, http://dx.doi.org/10.48550/arxiv.1509.03593
    Conference Papers | 2015
    Chen FW; Ilatikhameneh H; Klimeck G; Rahman R; Chu T; Chen Z, 2015, 'Achieving a higher performance in bilayer graphene FET - Strain engineering', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 177 - 181, http://dx.doi.org/10.1109/SISPAD.2015.7292288
    Preprints | 2015
    Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Spin-lattice relaxation times of single donors and donor clusters in silicon, http://dx.doi.org/10.48550/arxiv.1501.04089
    Preprints | 2015
    Ilatikhameneh H; Ameen T; Klimeck G; Rahman R, 2015, Universal Behavior of Strain in Quantum Dots, http://dx.doi.org/10.48550/arxiv.1509.08004
    Preprints | 2015
    Ilatikhameneh H; Ameen TA; Klimeck G; Appenzeller J; Rahman R, 2015, Dielectric Engineered Tunnel Field-Effect Transistor, http://dx.doi.org/10.48550/arxiv.1508.00453
    Conference Papers | 2015
    Ilatikhameneh H; Chen FW; Rahman R; Klimeck G, 2015, 'Electrically doped 2D material tunnel transistor', in 18th International Workshop on Computational Electronics, IWCE 2015, http://dx.doi.org/10.1109/IWCE.2015.7301966
    Preprints | 2015
    Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2015, Scaling Theory of Electrically Doped 2D Transistors, http://dx.doi.org/10.48550/arxiv.1504.03387
    Conference Papers | 2015
    Ilatikhameneh H; Klimeck G; Rahman R, 2015, '2D tunnel transistors for ultra-low power applications: Promises and challenges', in 2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings, http://dx.doi.org/10.1109/E3S.2015.7336792
    Preprints | 2015
    Ilatikhameneh H; Klimeck G; Rahman R, 2015, Can Tunnel Transistors Scale Below 10nm?, http://dx.doi.org/10.48550/arxiv.1509.08032
    Conference Papers | 2015
    Ilatikhameneh H; Novakovic B; Tan Y; Salmani-Jelodar M; Kubis T; Povolotskyi M; Rahman R; Klimeck G, 2015, 'Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348606
    Conference Papers | 2015
    Ilatikhameneh H; Rahman R; Appenzeller J; Klimeck G, 2015, 'Electrically doped WTe2 tunnel transistors', in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 270 - 272, http://dx.doi.org/10.1109/SISPAD.2015.7292311
    Preprints | 2015
    Ilatikhameneh H; Salazar RB; Klimeck G; Rahman R; Appenzeller J, 2015, From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling, http://dx.doi.org/10.48550/arxiv.1509.08170
    Preprints | 2015
    Ilatikhameneh H; Tan Y; Novakovic B; Klimeck G; Rahman R; Appenzeller J, 2015, Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials, http://dx.doi.org/10.48550/arxiv.1502.01760
    Preprints | 2015
    Laucht A; Muhonen JT; Mohiyaddin FA; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2015, Electrically controlling single spin qubits in a continuous microwave field, http://dx.doi.org/10.48550/arxiv.1503.05985
    Conference Papers | 2015
    Mohiyaddin FA; Rahman R; Kalra R; Lee S; Klimeck G; Hollenberg LCL; Yang CH; Rossi A; Dzurak AS; Morello A, 2015, 'Designing a large scale quantum computer with atomistic simulations', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348565
    Preprints | 2015
    Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, http://dx.doi.org/10.48550/arxiv.1501.05669
    Preprints | 2015
    Rahman R; Verduijn J; Wang Y; Yin C; De Boo G; Klimeck G; Rogge S, 2015, Bulk and sub-surface donor bound excitons in silicon under electric fields, http://dx.doi.org/10.48550/arxiv.1510.00065
    Preprints | 2015
    Salazar RB; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2015, A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations, http://dx.doi.org/10.48550/arxiv.1506.00077
    Preprints | 2015
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2015, Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon, http://dx.doi.org/10.48550/arxiv.1507.06125
    Conference Papers | 2015
    Tan YHM; Ryu H; Weber B; Lee S; Rahman R; Hollenberg LCL; Simmons MY; Klimeck G, 2015, 'Statistical modeling of ultra-scaled donor-based silicon phosphorus devices', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348589
    Preprints | 2015
    Tosi G; Mohiyaddin FA; Schmitt V; Tenberg S; Rahman R; Klimeck G; Morello A, 2015, Silicon quantum processor with robust long-distance qubit couplings, http://dx.doi.org/10.48550/arxiv.1509.08538
    Preprints | 2015
    Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon, http://dx.doi.org/10.48550/arxiv.1504.06370
    Preprints | 2015
    Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, Spatially resolved resonant tunneling on single atoms in silicon, http://dx.doi.org/10.48550/arxiv.1501.05042
    Preprints | 2015
    Wang YE; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Engineering inter-qubit exchange coupling between donor bound electrons in silicon, http://dx.doi.org/10.48550/arxiv.1507.08009
    Conference Papers | 2015
    Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Lee S; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2015, 'Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348550
    Conference Papers | 2014
    Ameen T; Ilatikhameneh H; Charles J; Hsueh Y; Chen S; Fonseca J; Povolotskyi M; Rahman R; Klimeck G, 2014, 'Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots', in Proceedings of the IEEE Conference on Nanotechnology, pp. 921 - 924, http://dx.doi.org/10.1109/NANO.2014.6968137
    Preprints | 2014
    Pla JJ; Mohiyaddin FA; Tan KY; Dehollain JP; Rahman R; Klimeck G; Jamieson DN; Dzurak AS; Morello A, 2014, Coherent Control of a Single Silicon-29 Nuclear Spin Qubit, http://dx.doi.org/10.48550/arxiv.1408.1347
    Preprints | 2014
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, Spatially Resolving Valley Quantum Interference of a Donor in Silicon, http://dx.doi.org/10.48550/arxiv.1403.4648
    Preprints | 2014
    Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2014, Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory, http://dx.doi.org/10.48550/arxiv.1410.1951
    Preprints | 2011
    Lansbergen GP; Rahman R; Tettamanzi GC; Verduijn J; Hollenberg LCL; Klimeck G; Rogge S, 2011, Dopant metrology in advanced FinFETs, http://dx.doi.org/10.48550/arxiv.1111.4238
    Conference Papers | 2011
    Neupane MR; Rahman R; Lake RK, 2011, 'Carrier leakage in Ge/Si core-shell nanocrystals for lasers: Core size and strain effects', in Proceedings of SPIE - The International Society for Optical Engineering, http://dx.doi.org/10.1117/12.894153
    Preprints | 2011
    Rahman R; Lansbergen GP; Verduijn J; Tettamanzi GC; Park SH; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, http://dx.doi.org/10.48550/arxiv.1107.2701
    Preprints | 2011
    Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon, http://dx.doi.org/10.48550/arxiv.1102.5311
    Preprints | 2011
    Witzel WM; Rahman R; Carroll MS, 2011, SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge, http://dx.doi.org/10.48550/arxiv.1110.4143
    Preprints | 2010
    Lansbergen GP; Rahman R; Verduijn J; Tettamanzi GC; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2010, Lifetime enhanced transport in silicon due to spin and valley blockade, http://dx.doi.org/10.48550/arxiv.1008.1381
    Preprints | 2010
    Rahman R; Muller RP; Levy JE; Carroll MS; Klimeck G; Greentree AD; Hollenberg LCL, 2010, Coherent electron transport by adiabatic passage in an imperfect donor chain, http://dx.doi.org/10.48550/arxiv.1008.1494
    Conference Papers | 2010
    Tettamanzi G; Lansbergen G; Verduijn J; Rahman R; Paul A; Lee SH; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Innovative characterization techniques for ultra-scaled FinFETs', in Proceedings of the 10th IEEE International Conference on Nanotechnology, IEEE, Korea, pp. 25 - 30, presented at 10th IEEE International Conference on Nanotechnology joint Symposium with Nano Korea 2010, Korea, 17 August 2010 - 20 August 2010, http://dx.doi.org/10.1109/NANO.2010.5698069
    Preprints | 2009
    Ahmed S; Kharche N; Rahman R; Usman M; Lee S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2009, Multimillion Atom Simulations with NEMO 3-D, http://dx.doi.org/10.48550/arxiv.0901.1890
    Conference Papers | 2009
    Lansbergen GP; Rahman R; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2009, '+Level spectrum of single gated as donors', in Caldas MJ; Studart N (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Rio de Janeiro, BRAZIL, pp. 93 - 94, presented at 29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, 27 July - 01 August 2008, http://dx.doi.org/10.1063/1.3295570
    Preprints | 2009
    Park SH; Rahman R; Klimeck G; Hollenberg LCL, 2009, Mapping donor electron wave function deformations at sub-Bohr orbit resolution, http://dx.doi.org/10.48550/arxiv.0902.1515
    Preprints | 2009
    Rahman R; Lansbergen GP; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg LCL, 2009, Orbital Stark effect and quantum confinement transition of donors in silicon, http://dx.doi.org/10.48550/arxiv.0904.4281
    Preprints | 2009
    Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg LCL, 2009, Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors, http://dx.doi.org/10.48550/arxiv.0905.3200
    Preprints | 2009
    Rahman R; Park SH; Cole JH; Greentree AD; Muller RP; Klimeck G; Hollenberg LCL, 2009, Atomistic simulations of adiabatic coherent electron transport in triple donor systems, http://dx.doi.org/10.48550/arxiv.0903.1142
    Preprints | 2009
    Rahman R; Park SH; Klimeck G; Hollenberg LCL, 2009, Stark tuning of the charge states of a two-donor molecule in silicon, http://dx.doi.org/10.48550/arxiv.0907.3929
    Conference Papers | 2009
    Verduijn J; Lansbergen GP; Tettamanzi GC; Rahman R; Biesemans S; Colleart N; Klimeck G; L. Hollenberg LC; Rogge S, 2009, 'From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs', in Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, presented at 2009 International Conference on Solid State Devices and Materials, 06 October 2009 - 09 October 2009, http://dx.doi.org/10.7567/ssdm.2009.k-1-1
    Conference Papers | 2008
    Lansbergen GP; Rahman R; Wellard CJ; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Transport-based dopant metrology in advanced FinFETs', in Technical Digest - International Electron Devices Meeting, IEDM, IEEE, San Francisco, CA, pp. 713 - +, presented at IEEE International Electron Devices Meeting, San Francisco, CA, 15 - 17 December 2008, http://dx.doi.org/10.1109/IEDM.2008.4796794
    Conference Papers | 2008
    Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 164 - 167, http://dx.doi.org/10.1109/ICONN.2008.4639272
    Conference Papers | 2008
    Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/109/1/012003
    Conference Papers | 2007
    Ahmed S; Usman M; Heitzinger C; Rahman R; Schliwa A; Klimeck G, 2007, 'Symmetry breaking and fine structure splitting in zincblende quantum dots: Atomistic simulations of long-range strain and piezoelectric field', in AIP Conference Proceedings, pp. 849 - 850, http://dx.doi.org/10.1063/1.2730157
    Preprints | 2007
    Rahman R; Wellard CJ; Bradbury FR; Prada M; Cole JH; Klimeck G; Hollenberg LCL, 2007, High precision quantum control of single donor spins in silicon, http://dx.doi.org/10.48550/arxiv.0705.2079

  • "Atomic scale control over quantum materials", ARC LIEF 2022.
  • “Enlightening single rare-earth atoms in scanning tunneling microscopy”, ARC Discovery Project 2021,  (1/12021-31/12/2024).
  • “Engineering giant momentum asymmetry of quantum vacuum”, US DARPA, Dec 2020-Dec2021.
  • “Accelerated donor device development through atomistic modeling”, Silicon Quantum Computing Pty. Ltd. (May 2020-May 2024).
  • “Donor based quantum computing in silicon”, US Army Research Office, Jan 2017-May 2021.
  • “Designing quantum fluctuational meta-molecules for giant co-operative light-matter interaction beyond spectral boundaries”, US DARPA, Aug 2018-Feb 2020. 

My Research Supervision

Postdoctoral Research Associates:

Dr. Yuling Hsueh 

Dr. Edyta Osika

Dr. Hongyang Ma

PhD Students:

Md. Serajum Monir

Mushita Masud Munia

Saffat Huq

Pratik Chowdhury

Honours:

Angus Worrall

Zachary Kembrey

Undergraduates:

Hugo Sebastian

My Teaching

First Year Physics 1121/1131

Electromagnetism Physics 2114

Experimental and Computational Physics 3112

First Year Lab Director