Scientia Professor Sven Rogge
Dean

Scientia Professor Sven Rogge

PhD in Physics (Stanford University, 1997)

BSc in Physics (Universität Karlsruhe, 1991)

Science
Dean's Unit, Science

Professor Sven Rogge is the Dean of the Faculty of Science at the University of New South Wales, Sydney (UNSW). Sven’s research interest is in condensed matter physics, in particular quantum electronics, at the School of Physics. Sven works on quantum computation in silicon in the ARC Centre for Quantum Computation and Communication Technology. In a team of enthusiastic researchers, they work on gaining atomistic insight into the interactions of quantum objects, like atoms and qubits, with their environment. This allows the team to manipulate quantum information and minimise decoherence. Before joining UNSW in 2011 Sven worked at the Kavli Institute for Quantum Nano Science at Delft University and Stanford University.

RESEARCH

My Research Goals

  • Control entanglement in a solid-state system, i.e. qubits
  • Study the interaction between qubits and light
  • Build and control molecular states in a solid with atomic precision

My Research in Detail

The goal of my research program is to understand the physics of qubit coupling with the environment to understand decoherence pathways and to control. The control over the electron wavefunction requires interface which lead to the loss of bulk properties of the qubit due to physical processes like the valley-orbit coupling, exchange, and many-body effects in coherent coupling. The atomistic understanding of the interaction between the environment and the qubit is essential for quantum computation since it allows the achievement of optimal coherence times and optimal robustness of the quantum gates. Optical addressing of electrons in Si is nontrivial but vastly beneficial due to the gained flexibility and unprecedented high resolution. We investigate efficient read-out and coupling schemes to open up new pathways into optical control.

Current Student Projects (PhD and Honours)

We look for enthusiastic PhD and Honours candidates for research projects. Prestigious Scholarship are available which are typically valued at $36,000 per annum for up to three-and-a-half years. The successful scholarship applicant will be expected to enrol for a PhD degree and should have an honours degree (level 1 or 2A) or equivalent, in Physics, Applied Physics, Material Science or a related subject. International applicants with a Masters degree are strongly encouraged to apply. Interested candidates should contact me to discuss possible projects and the application procedure. International applicants are very welcome! Please email an application containing a complete resume including telephone numbers, email address, and contact details of three academic referees to me. You will get a confirmation within a few days. The scholarships will remain open until filled.

Supervision Opportunities/Areas

There are always projects in the main research areas which focus on low temperature scanning-tunnelling spectroscopy, atomistic transport, and the interaction of light and matter at the atomic scale. We have a team of 15 enthusiastic researchers ranging from undergraduates to postdoctoral fellows. My group combines different research strengths and is very international. UNSW offers a first class laboratory and intellectual environment for atomic-scale electronics research.

Courses I teach

PHY3118: Quantum Physics of Solids and Devices

Professional affiliations and service positions

I am the President of the Australian Institute of Physics

Phone
+61 2 9385 5979
Location
Newton Building (2nd floor)
  • Book Chapters | 2013
    2013, 'Circuits with Single-Atom Devices', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-15
    Book Chapters | 2013
    2013, 'Circuits with Single-Atom Devices', in Prati E; Shinada T (ed.), Single Atom Nanoelectronics, PAN STANFORD PUBLISHING PTE LTD, pp. 329 - 343, http://dx.doi.org/10.4032/9789814316699
    Book Chapters | 2013
    2013, 'Orbital Structure and Transport Characteristics of Single Donors', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-10
    Book Chapters | 2013
    2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10
    Book Chapters | 2012
    2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034
    Book Chapters | 2012
    2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15
    Book Chapters | 2012
    2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034
    Book Chapters | 2012
    2012, 'New tools for the direct characterisation of FinFETS', in CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications, pp. 361
  • Journal articles | 2023
    2023, 'Observing Er3+ Sites in Si with an in Situ Single-Photon Detector', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.014037
    Journal articles | 2022
    Hu G; De Boo GG; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Erratum: Time-Resolved Photoionization Detection of a Single Er3+Ion in Silicon (Nano Letters (2022) 22:1 (396-401) DOI: 10.1021/acs.nanolett.1c04072)', Nano Letters, 22, pp. 1456 - 1456, http://dx.doi.org/10.1021/acs.nanolett.2c00173
    Journal articles | 2022
    Hu G; De Boo GG; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Time-Resolved Photoionization Detection of a Single Er3+Ion in Silicon', Nano Letters, 22, pp. 396 - 401, http://dx.doi.org/10.1021/acs.nanolett.1c04072
    Journal articles | 2022
    Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', Materials for Quantum Technology, 2, pp. 025002 - 025002, http://dx.doi.org/10.1088/2633-4356/ac5d1d
    Journal articles | 2022
    Yang J; Fan W; Zhang Y; Duan C; De Boo GG; Ahlefeldt RL; Longdell JJ; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, 'Zeeman and hyperfine interactions of a single Er 3+ 167 ion in Si', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.235306
    Journal articles | 2022
    Yang J; Wang J; Fan W; Zhang Y; Duan C; Hu G; De Boo GG; Johnson BC; McCallum JC; Rogge S; Yin C; Du J, 2022, 'Spectral Broadening of a Single Er3+ Ion in a Si Nanotransistor', Physical Review Applied, 18, http://dx.doi.org/10.1103/PhysRevApplied.18.034018
    Journal articles | 2022
    2022, 'Certified random-number generation from quantum steering', Physical Review A, 106, http://dx.doi.org/10.1103/PhysRevA.106.L050401
    Journal articles | 2022
    2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006
    Journal articles | 2022
    2022, 'Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.195408
    Journal articles | 2022
    2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.155158
    Journal articles | 2022
    2022, 'Single site optical spectroscopy of coupled Er3+ion pairs in silicon', Quantum Science and Technology, 7, http://dx.doi.org/10.1088/2058-9565/ac56c7
    Journal articles | 2022
    2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007
    Journal articles | 2021
    Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2021, 'Isotopic enrichment of silicon by high fluence 28Si- ion implantation', Physical Review Materials, 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.014601
    Journal articles | 2021
    Kobayashi T; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl HJ; Simmons MY; Rogge S, 2021, 'Engineering long spin coherence times of spin–orbit qubits in silicon', Nature Materials, 20, pp. 38 - 42, http://dx.doi.org/10.1038/s41563-020-0743-3
    Journal articles | 2021
    Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2021, 'Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits', npj Quantum Information, 7, http://dx.doi.org/10.1038/s41534-021-00386-2
    Journal articles | 2021
    Xu BB; De Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2021, 'Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators', Physical Review Applied, 15, http://dx.doi.org/10.1103/PhysRevApplied.15.044014
    Journal articles | 2021
    2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, 46, pp. 616 - 622, http://dx.doi.org/10.1557/s43577-021-00136-x
    Journal articles | 2021
    2021, 'Tunable Electrical Conductivity of Flexible Metal-Organic Frameworks', CHEMISTRY OF MATERIALS, 34, pp. 254 - 265, http://dx.doi.org/10.1021/acs.chemmater.1c03236
    Journal articles | 2020
    De Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars MJ; Rogge S, 2020, 'High-resolution spectroscopy of individual erbium ions in strong magnetic fields', Physical Review B, 102, http://dx.doi.org/10.1103/PhysRevB.102.155309
    Journal articles | 2020
    Everts JR; King GGG; Lambert NJ; Kocsis S; Rogge S; Longell JJ, 2020, 'Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare-earth ion spins', Physical Review B, 101, http://dx.doi.org/10.1103/PhysRevB.101.214414
    Journal articles | 2020
    Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, 'Scanned Single-Electron Probe inside a Silicon Electronic Device', ACS Nano, 14, pp. 9449 - 9455, http://dx.doi.org/10.1021/acsnano.0c00736
    Journal articles | 2020
    Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, 11, pp. 6124, http://dx.doi.org/10.1038/s41467-020-19835-1
    Journal articles | 2020
    2020, 'Certification of spin-based quantum simulators', Physical Review A, 101, http://dx.doi.org/10.1103/PhysRevA.101.052344
    Journal articles | 2020
    2020, 'The role of science in the international response to COVID-19 and the imminent cuts to stem education', Australian Physics, 57, pp. 7
    Journal articles | 2019
    Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, 'Hole spin echo envelope modulations', Physical Review B, 100, http://dx.doi.org/10.1103/PhysRevB.100.125402
    Journal articles | 2019
    Zhang Q; Hu G; De Boo GG; Rančić M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2019, 'Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors', Nano Letters, 19, pp. 5025 - 5030, http://dx.doi.org/10.1021/acs.nanolett.9b01281
    Journal articles | 2019
    Zhang Y; Shi L; Hu D; Chen S; Xie S; Lu Y; Cao Y; Zhu Z; Jin L; Guan BO; Rogge S; Li X, 2019, 'Full-visible multifunctional aluminium metasurfaces by: In situ anisotropic thermoplasmonic laser printing', Nanoscale Horizons, 4, pp. 601 - 609, http://dx.doi.org/10.1039/c9nh00003h
    Journal articles | 2019
    2019, 'シリコン中のアクセプタ不純物スピン状態の制御による長いコヒーレンス時間の実現', , pp. 265 - 265, http://dx.doi.org/10.11316/jpsgaiyo.73.2.0_265
    Journal articles | 2018
    Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2018, 'Entanglement control and magic angles for acceptor qubits in Si', Applied Physics Letters, 113, http://dx.doi.org/10.1063/1.5036521
    Journal articles | 2018
    Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.041032
    Journal articles | 2018
    Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, 'Gigahertz Single-Electron Pumping Mediated by Parasitic States', Nano Letters, 18, pp. 4141 - 4147, http://dx.doi.org/10.1021/acs.nanolett.8b00874
    Journal articles | 2018
    Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.031049
    Journal articles | 2018
    Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, 97, http://dx.doi.org/10.1103/PhysRevB.97.195301
    Journal articles | 2018
    van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, 4, pp. eaat9199, http://dx.doi.org/10.1126/sciadv.aat9199
    Journal articles | 2018
    2018, 'Spin Echo Study of Boron in 28Si at Millikelvin Temperature', , pp. 1023 - 1023, http://dx.doi.org/10.11316/jpsgaiyo.72.2.0_1023
    Journal articles | 2017
    Agundez RR; Hill CD; Hollenberg LCL; Rogge S; Blaauboer M, 2017, 'Superadiabatic quantum state transfer in spin chains', Physical Review A, 95, http://dx.doi.org/10.1103/PhysRevA.95.012317
    Journal articles | 2017
    Fresch B; Bocquel J; Hiluf D; Rogge S; Levine RD; Remacle F, 2017, 'Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon', ChemPhysChem, 18, pp. 1790 - 1797, http://dx.doi.org/10.1002/cphc.201700222
    Journal articles | 2017
    Fresch B; Bocquel J; Rogge S; Levine RD; Remacle F, 2017, 'A Probabilistic Finite State Logic Machine Realized Experimentally on a Single Dopant Atom', Nano Letters, 17, pp. 1846 - 1852, http://dx.doi.org/10.1021/acs.nanolett.6b05149
    Journal articles | 2017
    Klymenko MV; Rogge S; Remacle F, 2017, 'Electronic states and valley-orbit coupling in linear and planar molecules formed by coupled P donors in silicon', Physical Review B, 95, http://dx.doi.org/10.1103/PhysRevB.95.205301
    Journal articles | 2017
    Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362
    Journal articles | 2017
    Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LC L, 2017, 'Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon', Nanoscale, 9, pp. 17013 - 17019, http://dx.doi.org/10.1039/c7nr05081j
    Journal articles | 2017
    Van Der Heijden J; Tettamanzi GC; Rogge S, 2017, 'Dynamics of a single-atom electron pump', Scientific Reports, 7, http://dx.doi.org/10.1038/srep44371
    Journal articles | 2017
    2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies (vol 11, pg 2444, 2017)', ACS NANO, 11, pp. 3420 - 3420, http://dx.doi.org/10.1021/acsnano.6b08154
    Journal articles | 2016
    House MG; Bartlett I; Pakkiam P; Koch M; Peretz E; Van Der Heijden J; Kobayashi T; Rogge S; Simmons MY, 2016, 'High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation', Physical Review Applied, 6, http://dx.doi.org/10.1103/PhysRevApplied.6.044016
    Journal articles | 2016
    Kobayashi T; Van Der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, 'Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system', Applied Physics Letters, 108, http://dx.doi.org/10.1063/1.4945736
    Journal articles | 2016
    Salfi J; Mol JA; Culcer D; Rogge S, 2016, 'Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon', Physical Review Letters, 116, http://dx.doi.org/10.1103/PhysRevLett.116.246801
    Journal articles | 2016
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, 7, http://dx.doi.org/10.1038/ncomms11342
    Journal articles | 2016
    Salfi J; Tong M; Rogge S; Culcer D, 2016, 'Quantum computing with acceptor spins in silicon', Nanotechnology, 27, http://dx.doi.org/10.1088/0957-4484/27/24/244001
    Journal articles | 2016
    Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2016, 'Donor wave functions in Si gauged by STM images', Physical Review B, 93, http://dx.doi.org/10.1103/PhysRevB.93.045303
    Journal articles | 2016
    Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83
    Journal articles | 2015
    Agundez RR; Salfi J; Rogge S; Blaauboer M, 2015, 'Local Kondo temperatures in atomic chains', Physical Review B - Condensed Matter and Materials Physics, 91, http://dx.doi.org/10.1103/PhysRevB.91.041117
    Journal articles | 2015
    Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal', Physical Review A - Atomic, Molecular, and Optical Physics, 92, http://dx.doi.org/10.1103/PhysRevA.92.062313
    Journal articles | 2015
    Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4929827
    Journal articles | 2015
    Hill CD; Peretz E; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY; Hollenberg LCL, 2015, 'Quantum Computing: A surface code quantum computer in silicon', Science Advances, 1, http://dx.doi.org/10.1126/sciadv.1500707
    Journal articles | 2015
    House MG; Kobayashi T; Weber B; Hile SJ; Watson TF; Van Der Heijden J; Rogge S; Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, 6, http://dx.doi.org/10.1038/ncomms9848
    Journal articles | 2015
    Klymenko MV; Rogge S; Remacle F, 2015, 'Multivalley envelope function equations and effective potentials for phosphorus impurity in silicon', Physical Review B - Condensed Matter and Materials Physics, 92, http://dx.doi.org/10.1103/PhysRevB.92.195302
    Journal articles | 2015
    Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, 106, http://dx.doi.org/10.1063/1.4921640
    Journal articles | 2015
    Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, 'A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4928589
    Journal articles | 2015
    Schofield SR; Rogge S, 2015, 'Single dopants in semiconductors', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/150301
    Journal articles | 2015
    Urdampilleta M; Chatterjee A; Lo CC; Kobayashi T; Mansir J; Barraud S; Betz AC; Rogge S; Gonzalez-Zalba MF; Morton JJL, 2015, 'Charge dynamics and spin blockade in a hybrid double quantum dot in silicon', Physical Review X, 5, http://dx.doi.org/10.1103/PhysRevX.5.031024
    Journal articles | 2015
    Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, 91, http://dx.doi.org/10.1103/PhysRevB.91.245209
    Journal articles | 2015
    Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154207
    Journal articles | 2015
    Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154203
    Journal articles | 2014
    Rossi A; Tanttu T; Tan KY; Iisakka I; Zhao R; Chan KW; Tettamanzi GC; Rogge S; Dzurak AS; Möttönen M, 2014, 'An accurate single-electron pump based on a highly tunable silicon quantum dot', Nano Letters, 14, pp. 3405 - 3411, http://dx.doi.org/10.1021/nl500927q
    Journal articles | 2014
    Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941
    Journal articles | 2014
    Tettamanzi GC; Wacquez R; Rogge S, 2014, 'Charge pumping through a single donor atom', New Journal of Physics, 16, http://dx.doi.org/10.1088/1367-2630/16/6/063036
    Journal articles | 2014
    Van Der Heijden J; Salfi J; Mol JA; Verduijn J; Tettamanzi GC; Hamilton AR; Collaert N; Rogge S, 2014, 'Probing the spin states of a single acceptor atom', Nano Letters, 14, pp. 1492 - 1496, http://dx.doi.org/10.1021/nl4047015
    Journal articles | 2014
    Verduijn J; Vinet M; Rogge S, 2014, 'Radio-frequency dispersive detection of donor atoms in a field-effect transistor', Applied Physics Letters, 104, pp. 102107-1 - 102107-4, http://dx.doi.org/10.1063/1.4868423
    Journal articles | 2013
    Rogge S; Sellars MJ, 2013, 'Quantum computing: Atomic clocks in the solid state', Nature Nanotechnology, 8, pp. 544 - 545, http://dx.doi.org/10.1038/nnano.2013.152
    Journal articles | 2013
    Simmons MY; Miwa JA; Rogge S; Mol J; Salfi J, 2013, 'Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants', Physical Review B, 87, pp. 245417, http://dx.doi.org/10.1103/PhysRevB.87.245417
    Journal articles | 2013
    Verduijn A; Tettamanzi G; Rogge S, 2013, 'Wave function control over a single donor atom', Nano Letters, 14, pp. 1476 - 1480, http://dx.doi.org/10.1021/nl304518v
    Journal articles | 2013
    Yin CM; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, 'Optical addressing of an individual erbium ion in silicon', Nature, 497, pp. 91 - 94, http://dx.doi.org/10.1038/nature12081
    Journal articles | 2013
    Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2013, 'Silicon Quantum Electronics', Reviews of Modern Physics, 85, pp. 961 - 1019, http://dx.doi.org/10.1103/RevModPhys.85.961
    Journal articles | 2013
    2013, 'Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade (vol 107, 136602, 2011)', Physical Review Letters, 110, pp. 49901 - 049901, http://dx.doi.org/10.1103/PhysRevLett.110.049901
    Journal articles | 2013
    2013, 'Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system', Physical Review B, 87, pp. Article number235407, http://dx.doi.org/10.1103/PhysRevB.87.235407
    Journal articles | 2013
    2013, 'Multi project: Multi-valued and parallel molecular logic', International Journal of Unconventional Computing, 8, pp. 307 - 312
    Journal articles | 2013
    2013, 'Non-local coupling of two donor-bound electrons', New Journal of Physics, 15, http://dx.doi.org/10.1088/1367-2630/15/3/033020
    Journal articles | 2013
    2013, 'Transport through a single donor in p-type silicon', Applied Physics Letters, 103, pp. 043106, http://dx.doi.org/10.1063/1.4816439
    Journal articles | 2012
    Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn JA; Tettamanzi G; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M, 2012, 'Few electron limit of n-type metal oxide semiconductor single electron transistors', Nanotechnology, 23, pp. 215204-1 - 215204-5, http://dx.doi.org/10.1088/0957-4484/23/21/215204
    Journal articles | 2012
    Tettamanzi G; Verduijn JA; Lansbergen G; Blaauboer M; Calderon M; Aquado R; Rogge S, 2012, 'Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor', Physical Review Letters, 108, pp. 46803 - 046807, http://dx.doi.org/10.1103/PhysRevLett.108.046803
    Journal articles | 2012
    2012, 'Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs', Journal of Applied Physics, 110, pp. 124507 - 124516, http://dx.doi.org/10.1063/1.3660697
    Journal articles | 2012
    2012, 'Querying a quasi-classical Oracle: One-bit function identification problem implemented in a single atom transistor', Europhysics Letters, 99, pp. 28004-1 - 28004-6, http://dx.doi.org/10.1209/0295-5075/99/28004
    Journal articles | 2011
    Jehl X; Roche B; Sanquer M; Voisin B; Wacquez R; Deshpande V; Previtali B; Vinet M; Verduijn J; Tettamanzi GC; Rogge S; Kotekar-Patil D; Ruoff M; Kern D; Wharam DA; Belli M; Prati E; Fanciulli M, 2011, 'Mass production of silicon MOS-SETs: Can we live with nano-devices' variability?', Procedia Computer Science, 7, pp. 266 - 268, http://dx.doi.org/10.1016/j.procs.2011.09.016
    Journal articles | 2011
    Lansbergen G; Rahman R; Verduijn A; Tettamanzi G; Collaert N; Biesemans S; Klimeck G; Rogge S; Hollenberg L, 2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, 107, pp. 136602-1 - 136602-5, http://dx.doi.org/10.1103/PhysRevLett.107.136602
    Journal articles | 2011
    Mol J; Verduijn A; Levine RD; Remacle F; Rogge S, 2011, 'Integrated logic circuits using single-atom transistors', Proceedings of the National Academy of Sciences of the United States of America, 108, pp. 13969 - 13972, http://dx.doi.org/10.1073/pnas.1109935108
    Journal articles | 2011
    Rahman ; Lansbergen ; Verduijn A; Tettamanzi G; Park ; Collaert ; Biesemans ; Klimeck ; Hollenberg ; Rogge S, 2011, 'Electric field reduced charging energies and two-electron bound excited states of single donors in silicon', Physical Review B, 84, pp. 115458-1 - 115458-7, http://dx.doi.org/10.1103/PhysRevB.84.115428
    Journal articles | 2011
    Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LC L; Rogge S, 2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, 83, http://dx.doi.org/10.1103/PhysRevB.83.239904
    Journal articles | 2011
    Rahman R; Verduijn JA; Kharche N; Lansbergen G; Klimeck ; Hollenberg ; Rogge S, 2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, 83, pp. 195323-1 - 195323-5, http://dx.doi.org/10.1103/PhysRevB.83.195323
    Journal articles | 2011
    Tettamanzi G; Paul A; Lee SH; Mehrotra S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2011, 'Interface trap density metrology of state-of-the-art undoped Si n-FinFETs', IEEE Electron Device Letters, 32, pp. 440 - 442, http://dx.doi.org/10.1109/LED.2011.2106150
    Journal articles | 2011
    Tung BT; Nguyen HM; Dao DV; Rogge S; Salemink HW M; Sugiyama S, 2011, 'Strain sensitive effect in a triangular lattice photonic crystal hole-modified nanocavity', IEEE Sensors Journal, 11, pp. 2657 - 2663, http://dx.doi.org/10.1109/JSEN.2011.2157122
    Journal articles | 2011
    2011, 'Balanced ternary addition using a gated silicon nanowire', Applied Physics Letters, 99, pp. 263109-1 - 263109-3, http://dx.doi.org/10.1063/1.3669536
    Journal articles | 2011
    2011, 'Single-electron capacitance spectroscopy of individual dopants in silicon', Nano Letters, 11, pp. 5208 - 5212, http://dx.doi.org/10.1021/nl2025163
    Journal articles | 2010
    Calderon M; Verduijn J; Lansbergen G; Tettamanzi G; Rogge S; Koiller B, 2010, 'Heterointerface effects on the charging energy of the shallow D− ground state in silicon: Role of dielectric mismatch', Physical Review - Section B - Condensed Matter, 82, pp. 075317-1 - 075317-7, http://dx.doi.org/10.1103/PhysRevB.82.075317
    Journal articles | 2010
    Johnson BC; Tettamanzi G; Alves A; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, 'Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation', Applied Physics Letters, 96, pp. 264102-1 - 264102-3, http://dx.doi.org/10.1063/1.3458783
    Journal articles | 2010
    Klein M; Mol JA; Verduijn J; Lansbergen G; Rogge S; Levine RD; Remacle F, 2010, 'Ternary logic implemented on a single dopant atom field effect silicon transistor', Applied Physics Letters, 96, pp. 043107, http://dx.doi.org/10.1063/1.3297906
    Journal articles | 2010
    Lansbergen G; Tettamanzi G; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'Tunable Kondo effect in a single donor atom', Nano Letters, 10, pp. 455 - 460, http://dx.doi.org/10.1021/nl9031132
    Journal articles | 2010
    Nguyen HM; Dundar MA; Van der heijden RW; Van der drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact Mach-Zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics Express, 18, pp. 6437 - 6446, http://dx.doi.org/10.1364/OE.18.006437
    Journal articles | 2010
    Nguyen HM; Dundar MA; van der Heijden RW; van der Drift EW J M; Salemink HW M; Rogge S; Caro J, 2010, 'Compact mach-zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics InfoBase Conference Papers
    Journal articles | 2010
    Rogge S, 2010, 'Nanoelectronics: Single dopants learn their place', Nature Nanotechnology, 5, pp. 100 - 101, http://dx.doi.org/10.1038/nnano.2010.11
    Journal articles | 2010
    Tettamanzi GC; Lansbergen GP; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'A novel Kondo effect in single atom transistors', ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, pp. 319 - 321, http://dx.doi.org/10.1109/ICONN.2010.6045240
    Journal articles | 2010
    Tung BT; Dao DV; Susumu S; Nguyen HM; Rogge S; Salemink HW M, 2010, 'Strain sensitivity of a modified single-defect photonic crystal nanocavity for mechanical sensing', Proceedings of IEEE Sensors, pp. 2585 - 2588, http://dx.doi.org/10.1109/ICSENS.2010.5690169
    Journal articles | 2010
    2010, 'A low temperature surface preparation method for STM nano-lithography on Si(100)', Applied Surface Science, 256, pp. 5042 - 5045, http://dx.doi.org/10.1016/j.apsusc.2010.03.052
    Journal articles | 2010
    2010, 'Coherent transport through a double donor system in silicon', Applied Physics Letters, 96, pp. 072110-1 - 072110-3, http://dx.doi.org/10.1063/1.3318271
    Journal articles | 2010
    2010, 'Electrically addressing a molecule-like donor pair in silicon: An atomic scale cyclable full Adder logic', Journal of Physical Chemistry C, 114, pp. 20380 - 20386, http://dx.doi.org/10.1021/jp103524d
    Journal articles | 2010
    2010, 'Single Dopant Implantation into a Nanoscale MOSFET Devices', ECS Meeting Abstracts, MA2010-02, pp. 1570 - 1570, http://dx.doi.org/10.1149/ma2010-02/23/1570
    Journal articles | 2010
    2010, 'Sub-threshold study of undoped trigate nFinFET', Thin Solid Films, 518, pp. 2521 - 2523, http://dx.doi.org/10.1016/j.tsf.2009.10.114
    Journal articles | 2010
    2010, 'Thermionic emission as a tool to study transport in undoped nFinFETs', IEEE Electron Device Letters, 31, pp. 150 - 152, http://dx.doi.org/10.1109/LED.2009.2036134
    Journal articles | 2009
    Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; van den Brink J, 2009, 'Evidence for the formation of a Mott state in potassium-intercalated pentacene', Physical Review - Section B - Condensed Matter, 79, pp. 125116-1 - 125116-8, http://dx.doi.org/10.1103/PhysRevB.79.125116
    Journal articles | 2009
    Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314
    Journal articles | 2009
    Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg L, 2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, 80, pp. 155301-1 - 155301-5, http://dx.doi.org/10.1103/PhysRevB.80.155301
    Journal articles | 2009
    2009, 'Reconfigurable Logic Devices on a Single Dopant Atom—Operation up to a Full Adder by Using Electrical Spectroscopy', Chemphyschem, 10, pp. 162 - 173, http://dx.doi.org/10.1002/cphc.200800568
    Journal articles | 2008
    Lansbergen G; Rahman R; Wellard C; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, 1067, pp. 12 - 17, http://dx.doi.org/10.1557/proc-1067-b03-07
    Journal articles | 2008
    Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994
    Journal articles | 2008
    Lansbergen GP; Rahman R; Wellard CJ; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LC L; Rogge S, 2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, 1117, pp. 1 - 6, http://dx.doi.org/10.1557/proc-1117-j01-03
    Journal articles | 2008
    Nguyen MH; Rogge S; Caro J; van der Drift E; Salemink H, 2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', Optics InfoBase Conference Papers
    Journal articles | 2008
    2008, 'Transmission measurement of the photonic band gap of GaN photonic crystal slabs', Applied Physics Letters, 93, pp. 051117-1 - 051117-3, http://dx.doi.org/10.1063/1.2967744
    Journal articles | 2007
    Klein M; Rogge S; Remacle F; Levine RD, 2007, 'Transcending binary logic by gating three coupled quantum dots', Nano Letters, 7, pp. 2795 - 2799, http://dx.doi.org/10.1021/nl071376e
    Journal articles | 2007
    Sellier H; Lansbergen G; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2007, 'Subthreshold channels at the edges of nanoscale triple-gate silicon transistors', Applied Physics Letters, 90, pp. 073502-1 - 073502-3, http://dx.doi.org/10.1063/1.2476343
    Journal articles | 2007
    2007, 'Controlled self-organization of atom vacancies in monatomic gallium layers', Physical Review Letters, 99, pp. 116102-1 - 116102-4, http://dx.doi.org/10.1103/PhysRevLett.99.116102
    Journal articles | 2006
    Craciun MF; Rogge S; den Boer M-JL; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Electronic Transport through Electron-Doped Metal Phthalocyanine Materials', Advanced Materials, 18, pp. 320 - 324, http://dx.doi.org/10.1002/adma.200501268
    Journal articles | 2006
    Lansbergen GP; Sellier H; Collaert N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 351 - 354, http://dx.doi.org/10.1109/ICONN.2006.340624
    Journal articles | 2006
    Margadonna S; Prassides K; Iwasa Y; Taguchi Y; Craciun MF; Rogge S; Morpurgo AF, 2006, 'Potassium Phthalocyanine, KPc: One-Dimensional Molecular Stacks Bridged by K+ Ions', Inorganic Chemistry, 45, pp. 10472 - 10478, http://dx.doi.org/10.1021/ic060727
    Journal articles | 2006
    Sellier H; Lansbergen GP; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2006, 'Transport spectroscopy of a single dopant in a gated silicon nanowire', Physical Review Letters, 97, http://dx.doi.org/10.1103/PhysRevLett.97.206805
    Journal articles | 2006
    Snijders P; Rogge S; Weitering H, 2006, 'Competing periodicities in fractionally filled one-dimensional bands', Physical Review Letters, 96, pp. 076801-1 - 076801-4, http://dx.doi.org/10.1103/PhysRevLett.96.076801
    Journal articles | 2006
    Snijders PC; Rogge S; Weitering HH, 2006, 'Density waves in atomic necklaces', Europhysics News, 37, pp. 27 - 30, http://dx.doi.org/10.1051/epn:2006506
    Journal articles | 2006
    2006, 'Alkali-doped Metal-phthalocyanines: Electronic Properties and Structure', ECS Meeting Abstracts, MA2005-01, pp. 922 - 922, http://dx.doi.org/10.1149/ma2005-01/25/922
    Journal articles | 2006
    2006, 'Inside Front Cover: Electronic Transport through Electron-Doped Metal Phthalocyanine Materials (Adv. Mater. 3/2006)', Advanced Materials, 18, pp. NA - NA, http://dx.doi.org/10.1002/adma.200690014
    Journal articles | 2005
    Snijders PC; Rogge S; Gonzalez C; Perez R; Ortega J; Flores F; Weitering HH, 2005, 'Ga-induced atom wire formation and passivation of stepped Si(112)', Physical Review - Section B - Condensed Matter, 72, pp. 125343-1 - 125343-12, http://dx.doi.org/10.1103/PhysRevB.72.125343
    Journal articles | 2005
    de Boer R; Stassen A; Craciun MF; Mulder C; Molinari A; Rogge S; Morpurgo AF, 2005, 'Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors', Applied Physics Letters, 86, pp. 262109-1 - 262109-3, http://dx.doi.org/10.1063/1.1984093
    Journal articles | 2005
    2005, 'Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped metal-phthalocyanine compounds', Journal of the American Chemical Society, 127, pp. 12210 - 12211, http://dx.doi.org/10.1021/ja054468j
    Journal articles | 2004
    Caro J; Vink ID; Smit GD J; Rogge S; Klapwijk TM; Loo R; Caymax M, 2004, 'Direct observation by resonant tunneling of the B+ level in a delta-doped silicon barrier', Physical Review - Section B - Condensed Matter, 69, pp. 125324-1 - 125324-5, http://dx.doi.org/10.1103/PhysRevB.69.125324
    Journal articles | 2004
    Craciun MF; Rogge S; den Boer MJ L; Klapwijk TM; Morpurgo AF, 2004, 'Electron transport and tunnelling spectroscopy in alkali doped metal phthalocyanines', Journal de Physique Iv, 114, pp. 607 - 610, http://dx.doi.org/10.1051/jp4:2004114144
    Journal articles | 2004
    Gonzalez C; Snijders PC; Ortega J; Perez R; Flores F; Rogge S; Weitering HH, 2004, 'Formation of atom wires on vicinal silicon', Physical Review Letters, 93, pp. 126106-1 - 126106-4, http://dx.doi.org/10.1103/PhysRevLett.93.126106
    Journal articles | 2004
    Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Stark effect in shallow impurities in Si', Physical Review - Section B - Condensed Matter, 70, pp. 035206-1 - 035206-10, http://dx.doi.org/10.1103/PhysRevB.70.035206
    Journal articles | 2004
    Smit GD J; Rogge S; Caro J; Klapwijk TM, 2004, 'Group-theoretical analysis of double acceptors in a magnetic field: Identification of the Si : B+ ground state', Physical Review - Section B - Condensed Matter, 69, pp. 085211-1 - 085211-7, http://dx.doi.org/10.1103/PhysRevB.69.085211
    Journal articles | 2004
    2004, 'Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics', Physical Review - Section B - Condensed Matter, 69, pp. 035338-1 - 035338-5, http://dx.doi.org/10.1103/PhysRevB.69.035338
    Journal articles | 2003
    Rogge S; Durkut M; Klapwijk TM, 2003, 'Single domain transport measurements of C-60 films', PHYSICAL REVIEW B, 67, http://dx.doi.org/10.1103/PhysRevB67.033410
    Journal articles | 2003
    Smit G; Rogge S; Caro J; Klapwijk T, 2003, 'Gate-induced ionization of single dopant atoms', Physical Review - Section B - Condensed Matter, 68, pp. 193302-1 - 193302-4, http://dx.doi.org/10.1103/PhysRevB.68.193302
    Journal articles | 2003
    2003, 'New Structural Model of the Si(112)6 × 1-Ga Interface', AIP Conference Proceedings, http://dx.doi.org/10.1063/1.1639773
    Journal articles | 2003
    2003, 'Scanning Tunnelling Microscopy and Spectroscopy on Alkali Doped Copper Phthalocyanine', AIP Conference Proceedings, http://dx.doi.org/10.1063/1.1639741
    Journal articles | 2003
    2003, 'Single domain transport measurements of C-60 films', Physical Review - Section B - Condensed Matter, 67, pp. 033410-1 - 033410-4, http://dx.doi.org/10.1103/PhysRevB.67.033410
    Journal articles | 2002
    Smit G; Rogge S; Klapwijk T, 2002, 'Enhanced tunneling across nanometer-scale metal-semiconductor interfaces', Applied Physics Letters, 80, pp. 2568 - 2570, http://dx.doi.org/10.1063/1.1467980
    Journal articles | 2002
    Smit G; Rogge S; Klapwijk T, 2002, 'Scaling of nano-Schottky-diodes', Applied Physics Letters, 81, pp. 3852 - 3854, http://dx.doi.org/10.1063/1.1521251
    Journal articles | 2002
    2002, 'Scaling of micro-fabricated nanometer-sized Schottky diodes', Microelectronic Engineering, 64, pp. 429 - 433, http://dx.doi.org/10.1016/S0167-9317(02)00817-1
    Journal articles | 2001
    Rogge S; Timmerman R; Scholte P; Geerligs L; Salemink HWM, 2001, 'Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001)', Journal of Vacuum Science and Technology B, 19, pp. 659 - 665, http://dx.doi.org/10.1116/1.1372925
    Journal articles | 2000
    2000, 'Electrical transport through ultrathin ordered K3C60 films on Si', Carbon, 38, pp. 1647 - 1651, http://dx.doi.org/10.1016/S0008-6223(00)00052-X
    Journal articles | 2000
    2000, 'Surface polymerization of epitaxial Sb wires on Si(001)', Physical Review - Section B - Condensed Matter, 62, pp. 15341 - 15344, http://dx.doi.org/10.1103/PhysRevB.62.15341
    Journal articles | 1999
    Wilken HC; Rogge S; Götze O; Werfel T; Zwirner J, 1999, 'Specific detection by flow cytometry of histidine-tagged ligands bound to their receptors using a tag-specific monoclonal antibody', Journal of Immunological Methods, 226, pp. 139 - 145, http://dx.doi.org/10.1016/S0022-1759(99)00064-2
    Journal articles | 1998
    1998, 'Contact and alignment marker technology for atomic scale device fabrication', Microelectronic Engineering, 42, pp. 567 - 570, http://dx.doi.org/10.1016/S0167-9317(98)00133-6
    Journal articles | 1997
    Rogge S; Natelson D; Osheroff DD, 1997, '3He immersion cell for ultralow temperature study of amorphous solids', Review of Scientific Instruments, 68, pp. 1831 - 1834, http://dx.doi.org/10.1063/1.1148055
    Journal articles | 1997
    1997, 'He-3 immersion cell for ultralow temperature study of amorphous solids', Review of Scientific Instruments, 68, pp. 1831 - 1834, http://dx.doi.org/10.1063/1.1148055
    Journal articles | 1997
    1997, 'Nonequilibrium and hysteretic low temperature dielectric response to strain in glasses', Journal of Low Temperature Physics, 106, pp. 717 - 725, http://dx.doi.org/10.1007/BF02395933
    Journal articles | 1997
    1997, 'Nonlinear dielectric response of glasses at low temperature', Physical Review - Section B - Condensed Matter, 55, pp. 11256 - 11262, http://dx.doi.org/10.1103/PhysRevB.55.11256
    Journal articles | 1996
    1996, 'Anomalous behavior of epsilon(omega) in glasses at low temperature due to bias application', Czechoslovak Journal of Physics, 46, pp. 2263 - 2264, http://dx.doi.org/10.1007/BF02571123
    Journal articles | 1996
    1996, 'Anomalous dielectric properties of amorphous solids at low temperatures', Physica B - Condensed Matter, 219-220, pp. 243 - 246, http://dx.doi.org/10.1016/0921-4526(95)00708-3
    Journal articles | 1996
    1996, 'Dielectric response of two level systems to strain fields at low temperatures', Czechoslovak Journal of Physics, 46, pp. 2265 - 2266, http://dx.doi.org/10.1007/BF02571124
    Journal articles | 1996
    1996, 'Evidence for the importance of interactions between active defects in glasses', Physical Review Letters, 76, pp. 3136 - 3139, http://dx.doi.org/10.1103/PhysRevLett.76.3136
    Journal articles | 1996
    1996, 'Interactions between active defects in glasses at low temperatures', Czechoslovak Journal of Physics, 46, pp. 3295 - 3302, http://dx.doi.org/10.1007/BF02548143
    Journal articles | 1994
    1994, 'Low Temperature ac Dielectric Response of Glasses to High dc Electric Fields', Physical Review Letters, 73, pp. 268 - 271, http://dx.doi.org/10.1103/PhysRevLett.73.268
    Journal articles | 1994
    1994, 'Low temperature time and electric field dependence of the dielectric constant in amorphous materials', Physica B - Condensed Matter, 194-196, pp. 407 - 408, http://dx.doi.org/10.1016/0921-4526(94)90533-9
  • Preprints | 2022
    Zhang Y; Fan W; Yang J; Guan H; Zhang Q; Qin X; Duan C; de Boo GG; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution, , http://dx.doi.org/10.48550/arxiv.2212.00440
    Conference Papers | 2022
    2022, 'In-Situ Single-Photon Detection of Er Sites in Si', in 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings, Optica Publishing Group, presented at CLEO: QELS_Fundamental Science, http://dx.doi.org/10.1364/cleo_qels.2022.fm5d.5
    Preprints | 2022
    2022, Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation, , http://dx.doi.org/10.48550/arxiv.2208.03906
    Preprints | 2022
    2022, Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor, , http://dx.doi.org/10.1103/PhysRevApplied.18.034018
    Preprints | 2022
    2022, The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si, , http://dx.doi.org/10.1103/PhysRevB.105.235306
    Preprints | 2021
    Berkman IR; Lyasota A; de Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu B-B; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2021, Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection, , http://dx.doi.org/10.48550/arxiv.2108.07090
    Patents | 2021
    2021, Advanced processing apparatus, Patent No. Australian 2021 pat no.2015252051
    Preprints | 2021
    2021, Certified Random Number Generation from Quantum Steering, , http://dx.doi.org/10.48550/arxiv.2111.09506
    Preprints | 2021
    2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02906
    Preprints | 2021
    2021, Novel characterisation of dopant-based qubits, , http://dx.doi.org/10.48550/arxiv.2107.00784
    Preprints | 2021
    2021, Optical and Zeeman spectroscopy of individual Er ion pairs in silicon, , http://dx.doi.org/10.48550/arxiv.2108.07442
    Preprints | 2021
    2021, Spin-photon coupling for atomic qubit devices in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02904
    Preprints | 2021
    2021, Valley interference and spin exchange at the atomic scale in silicon, , http://dx.doi.org/10.48550/arxiv.2105.10931
    Preprints | 2021
    2021, Valley population of donor states in highly strained silicon, , http://dx.doi.org/10.48550/arxiv.2109.08540
    Preprints | 2020
    2020, Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation, , http://dx.doi.org/10.48550/arxiv.2009.08594
    Preprints | 2020
    2020, Scanned single-electron probe inside a silicon electronic device, , http://dx.doi.org/10.48550/arxiv.2001.10225
    Preprints | 2020
    2020, Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators, , http://dx.doi.org/10.48550/arxiv.2011.14792
    Patents | 2019
    2019, A Quantum Processor, Patent No. Australia patent no. 2015252050; Switzerland patent no. 3016034; Germany patent no. 602015048909.8; Spain patent no. E15192761; France patent no. 3016034; United Kingdom patent no. 3016034; Ireland patent no. 3016034; Netherlands patent no. 3016034, https://worldwide.espacenet.com/publicationDetails/biblio?II=1&ND=3&adjacent=true&locale=en_EP&FT=D&date=20160519&CC=AU&NR=2015252050A1&KC=A1
    Preprints | 2019
    2019, Certification of spin-based quantum simulators, , http://dx.doi.org/10.48550/arxiv.1905.01724
    Preprints | 2019
    2019, High resolution spectroscopy of individual erbium ions in strong magnetic fields, , http://dx.doi.org/10.48550/arxiv.1912.05795
    Preprints | 2019
    2019, Hole-Spin-Echo Envelope Modulations, , http://dx.doi.org/10.48550/arxiv.1906.11953
    Preprints | 2019
    2019, Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits, , http://dx.doi.org/10.48550/arxiv.1911.11143
    Preprints | 2019
    2019, Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare earth ion spins, , http://dx.doi.org/10.48550/arxiv.1911.11311
    Preprints | 2018
    2018, Engineering long spin coherence times of spin-orbit systems, , http://dx.doi.org/10.48550/arxiv.1809.10859
    Preprints | 2018
    2018, Gigahertz Single-Electron Pumping Mediated by Parasitic States, , http://dx.doi.org/10.48550/arxiv.1803.00791
    Preprints | 2018
    2018, Single rare-earth ions as atomic-scale probes in ultra-scaled transistors, , http://dx.doi.org/10.48550/arxiv.1803.01573
    Preprints | 2018
    2018, Single-shot single-gate RF spin readout in silicon, , http://dx.doi.org/10.48550/arxiv.1809.01802
    Patents | 2017
    De Boo G; Mccallum J; Rancic M; Rogge S; Sellars M; Stavrias N; Yin C, 2017, Optical addressing of individual targets in solids, Patent No. 2013360022-B2, http://pericles.ipaustralia.gov.au/ols/auspat/pdfSource.do?fileQuery=%87%A0%A4%98%92%9Al%A0%A4%98%92%9AU%95%98%9B%94%9D%90%9C%94lp%84a_%60bbe__aaqaa_%60f_c_e%5D%9F%93%95U%93%9E%96l%93%9E%96
    Patents | 2017
    Mol J; Rogge S; Salfi J, 2017, Quantum computing with acceptor-based qubits, Australia, Patent No. 2014234949, https://worldwide.espacenet.com/publicationDetails/biblio?CC=AU&NR=2014234949B2&KC=B2&FT=D#
    Preprints | 2017
    2017, Entanglement control and magic angles for acceptor qubits in Si, , http://dx.doi.org/10.48550/arxiv.1706.08858
    Preprints | 2017
    2017, Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies, , http://dx.doi.org/10.48550/arxiv.1702.08569
    Preprints | 2017
    2017, Spin-orbit dynamics of single acceptor atoms in silicon, , http://dx.doi.org/10.48550/arxiv.1703.03538
    Preprints | 2017
    2017, Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon, , http://dx.doi.org/10.48550/arxiv.1706.09981
    Preprints | 2017
    2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, , http://dx.doi.org/10.48550/arxiv.1703.04175
    Preprints | 2017
    2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, , http://dx.doi.org/10.48550/arxiv.1706.09261
    Conference Papers | 2016
    2016, 'A single-atom spin-orbit qubit in Si (Conference Presentation)', in Drouhin H-J; Wegrowe J-E; Razeghi M (eds.), Spintronics IX, SPIE, presented at Spintronics IX, 28 August 2016 - 01 September 2016, http://dx.doi.org/10.1117/12.2231059
    Preprints | 2016
    2016, Dynamics of a single-atom electron pump, , http://dx.doi.org/10.48550/arxiv.1607.08696
    Preprints | 2016
    2016, Linear and planar molecules formed by coupled P donors in silicon, , http://dx.doi.org/10.48550/arxiv.1611.07154
    Preprints | 2016
    2016, Multi-valley envelope function equations and effective potentials for P impurity in silicon, , http://dx.doi.org/10.48550/arxiv.1611.05908
    Preprints | 2016
    2016, Quantum Computing with Acceptor Spins in Silicon, , http://dx.doi.org/10.48550/arxiv.1606.04697
    Preprints | 2016
    2016, Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot, , http://dx.doi.org/10.48550/arxiv.1604.04020
    Preprints | 2016
    2016, Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision, , http://dx.doi.org/10.48550/arxiv.1601.02326
    Preprints | 2016
    2016, Superadiabatic quantum state transfer in spin chains, , http://dx.doi.org/10.48550/arxiv.1604.04885
    Preprints | 2015
    Fernandez-Gonzalvo X; Chen Y-H; Yin C; Rogge S; Longdell JJ, 2015, Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal, , http://dx.doi.org/10.48550/arxiv.1501.02014
    Conference Papers | 2015
    Fernandez-Gonzalvo X; Williamson LA; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Upconversion of microwave to optical photons using erbium impurities in a solid', in Conference on Lasers and Electro-Optics Europe - Technical Digest
    Conference Papers | 2015
    Rossi A; Tanttu T; Tan KY; Zhao R; Chan KW; Iisakka I; Tettamanzi GC; Rogge S; Dzurak AS; Mottonen M, 2015, 'A silicon single-electron pump with tunable electrostatic confinement', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348563
    Conference Papers | 2015
    Van Der Heijden J; Salfi J; Mol JA; Verduijn J; Tettamanzi GC; Hamilton AR; Collaert N; Rogge S, 2015, 'Probing a single acceptor in a silicon nanotransistor', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348587
    Conference Papers | 2015
    Van Der Heijden J; Tettamanzi GC; Rogge S, 2015, 'Modeling the pumping of electrons through a single dopant atom in a Si MOSFET', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, pp. 89 - 90, http://dx.doi.org/10.1109/SNW.2014.7348561
    Preprints | 2015
    2015, A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures, , http://dx.doi.org/10.48550/arxiv.1506.01224
    Preprints | 2015
    2015, Bulk and sub-surface donor bound excitons in silicon under electric fields, , http://dx.doi.org/10.48550/arxiv.1510.00065
    Preprints | 2015
    2015, Charge dynamics and spin blockade in a hybrid double quantum dot in silicon, , http://dx.doi.org/10.48550/arxiv.1503.01049
    Preprints | 2015
    2015, Charge-insensitive single-atom spin-orbit qubit in silicon, , http://dx.doi.org/10.48550/arxiv.1508.04259
    Preprints | 2015
    2015, Donor Wavefunctions in Si Gauged by STM Images, , http://dx.doi.org/10.48550/arxiv.1508.02772
    Preprints | 2015
    2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, , http://dx.doi.org/10.48550/arxiv.1501.05669
    Preprints | 2015
    2015, Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon, , http://dx.doi.org/10.48550/arxiv.1507.06125
    Preprints | 2015
    2015, Radio frequency reflectometry and charge sensing of a precision placed donor in silicon, , http://dx.doi.org/10.48550/arxiv.1509.03315
    Preprints | 2015
    2015, Spatially resolved resonant tunneling on single atoms in silicon, , http://dx.doi.org/10.48550/arxiv.1501.05042
    Preprints | 2015
    2015, Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon, , http://dx.doi.org/10.48550/arxiv.1504.06370
    Conference Papers | 2014
    Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2014, 'Frequency up-conversion of microwave photons to the telecommunications band in an Er: YSO crystal', in Optics InfoBase Conference Papers
    Conference Papers | 2014
    Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2014, 'Frequency up-conversion of microwave photons to the telecommunications band in an Er: YSO crystal', in Optics InfoBase Conference Papers
    Patents | 2014
    Rogge S; Sellars MJ; Yin C; McCallum JC; De Boo GG; Rancic M; Stavrias N, 2014, Optical addressing of individual targets in solids, Patent No. WO/2014/089621, Patent Agent:FB RICE & CO, http://patentscope.wipo.int/search/en/WO2014089621
    Conference Papers | 2014
    Rossi A; Tanttu T; Tan KY; Zhao R; Chan KW; Iisakka I; Tettamanzi GC; Rogge S; Möttönen M; Dzurak AS, 2014, 'Effects of electrostatic confinement in a silicon single-electron pump', in CPEM Digest (Conference on Precision Electromagnetic Measurements), pp. 440 - 441, http://dx.doi.org/10.1109/CPEM.2014.6898448
    Conference Papers | 2014
    Tettamanzi GC; Van Der Heijden J; Rogge S, 2014, 'Charge pumping through isolated dopant atoms', in 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, pp. 298 - 300, http://dx.doi.org/10.1109/COMMAD.2014.7038716
    Conference Papers | 2014
    Tettamanzi GC; Van Der Heijden J; Rogge S, 2014, 'Charge pumping through isolated dopant atoms', in 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, pp. 298 - 300, http://dx.doi.org/10.1109/COMMAD.2014.7038716
    Preprints | 2014
    2014, An accurate single-electron pump based on a highly tunable silicon quantum dot, , http://dx.doi.org/10.48550/arxiv.1406.1267
    Preprints | 2014
    2014, Charge Pumping Through a Single Donor Atom, , http://dx.doi.org/10.48550/arxiv.1401.3080
    Preprints | 2014
    2014, Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory, , http://dx.doi.org/10.48550/arxiv.1410.1951
    Preprints | 2014
    2014, Local Kondo temperatures in atomic chains, , http://dx.doi.org/10.48550/arxiv.1408.6447
    Preprints | 2014
    2014, Spatially Resolving Valley Quantum Interference of a Donor in Silicon, , http://dx.doi.org/10.48550/arxiv.1403.4648
    Preprints | 2013
    2013, Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants, , http://dx.doi.org/10.48550/arxiv.1303.2712
    Preprints | 2013
    2013, Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system, , http://dx.doi.org/10.48550/arxiv.1301.4235
    Preprints | 2013
    2013, Optical addressing of an individual erbium ion in silicon, , http://dx.doi.org/10.48550/arxiv.1304.2117
    Preprints | 2013
    2013, Radio-frequency dispersive detection of donor atoms in a field-effect transistor, , http://dx.doi.org/10.48550/arxiv.1312.3363
    Conference Papers | 2012
    2012, 'Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor', in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings, IEEE, Piscataway, NJ, United States, pp. 197 - 198, presented at 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC., 12 December 2012 - 14 December 2012, http://dx.doi.org/10.1109/COMMAD.2012.6472428
    Preprints | 2012
    2012, Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors, , http://dx.doi.org/10.48550/arxiv.1203.4811
    Preprints | 2012
    2012, Non-local coupling of two donor-bound electrons, , http://dx.doi.org/10.48550/arxiv.1209.4726
    Preprints | 2012
    2012, Silicon Quantum Electronics, , http://dx.doi.org/10.48550/arxiv.1206.5202
    Preprints | 2011
    2011, Balanced ternary addition using a gated silicon nanowire, , http://dx.doi.org/10.48550/arxiv.1108.5527
    Preprints | 2011
    2011, Dopant metrology in advanced FinFETs, , http://dx.doi.org/10.48550/arxiv.1111.4238
    Preprints | 2011
    2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, , http://dx.doi.org/10.48550/arxiv.1107.2701
    Preprints | 2011
    2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon, , http://dx.doi.org/10.48550/arxiv.1102.5311
    Preprints | 2011
    2011, Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs, , http://dx.doi.org/10.48550/arxiv.1102.0140
    Preprints | 2011
    2011, Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor, , http://dx.doi.org/10.48550/arxiv.1102.2977
    Preprints | 2011
    2011, New tools for the direct characterisation of FinFETs, , http://dx.doi.org/10.48550/arxiv.1111.5655
    Conference Papers | 2010
    Nguyen HM; van der Drift EW J M; Caro J; Rogge S; Salemink HW M, 2010, 'Photonic crystal Mach-Zehnder interferometer operating in the self-collimation mode of light', in Adibi A; Lin SY; Scherer A (eds.), Proceedings of SPIE - The International Society for Optical Engineering, SPIE-INT SOC OPTICAL ENGINEERING, San Francisco, CA, presented at Conference on Photonic and Phononic Crystal Materials and Devices X, San Francisco, CA, 26 - 28 January 2010, http://dx.doi.org/10.1117/12.841701
    Conference Papers | 2010
    2010, 'Innovative characterization techniques for ultra-scaled FinFETs', in Proceedings of the 10th IEEE International Conference on Nanotechnology, IEEE, Korea, pp. 25 - 30, presented at 10th IEEE International Conference on Nanotechnology joint Symposium with Nano Korea 2010, Korea, 17 August 2010 - 20 August 2010, http://dx.doi.org/10.1109/NANO.2010.5698069
    Preprints | 2010
    2010, Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation, , http://dx.doi.org/10.48550/arxiv.1007.5190
    Preprints | 2010
    2010, Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch, , http://dx.doi.org/10.48550/arxiv.1005.1237
    Preprints | 2010
    2010, Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs, , http://dx.doi.org/10.48550/arxiv.1011.2582
    Preprints | 2010
    2010, Lifetime enhanced transport in silicon due to spin and valley blockade, , http://dx.doi.org/10.48550/arxiv.1008.1381
    Preprints | 2010
    2010, Thermionic Emission as a tool to study transport in undoped nFinFETs, , http://dx.doi.org/10.48550/arxiv.1003.5441
    Conference Papers | 2009
    Lansbergen GP; Rahman R; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LC L; Rogge S, 2009, '+Level spectrum of single gated as donors', in Caldas MJ; Studart N (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Rio de Janeiro, BRAZIL, pp. 93 - 94, presented at 29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, 27 July - 01 August 2008, http://dx.doi.org/10.1063/1.3295570
    Conference Papers | 2009
    2009, 'From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs', in Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, presented at 2009 International Conference on Solid State Devices and Materials, 06 October 2009 - 09 October 2009, http://dx.doi.org/10.7567/ssdm.2009.k-1-1
    Preprints | 2009
    2009, Coherent transport through a double donor system in silicon, , http://dx.doi.org/10.48550/arxiv.0912.2196
    Preprints | 2009
    2009, Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors, , http://dx.doi.org/10.48550/arxiv.0905.3200
    Preprints | 2009
    2009, Orbital Stark effect and quantum confinement transition of donors in silicon, , http://dx.doi.org/10.48550/arxiv.0904.4281
    Preprints | 2009
    2009, Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon, , http://dx.doi.org/10.48550/arxiv.0904.2617
    Preprints | 2009
    2009, Tunable Kondo effect in a single donor atom, , http://dx.doi.org/10.48550/arxiv.0909.5602
    Conference Papers | 2008
    Lansbergen GP; Rahman R; Wellard CJ; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Transport-based dopant metrology in advanced FinFETs', in Technical Digest - International Electron Devices Meeting, IEDM, IEEE, San Francisco, CA, pp. 713 - +, presented at IEEE International Electron Devices Meeting, San Francisco, CA, 15 - 17 December 2008, http://dx.doi.org/10.1109/IEDM.2008.4796794
    Conference Papers | 2008
    Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LC L; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 164 - 167, http://dx.doi.org/10.1109/ICONN.2008.4639272
    Conference Papers | 2008
    Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/109/1/012003
    Conference Papers | 2008
    2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', in Optics InfoBase Conference Papers, http://dx.doi.org/10.1364/ipnra.2008.ima5
    Preprints | 2008
    2008, Evidence for the formation of a Mott state in potassium-intercalated pentacene, , http://dx.doi.org/10.48550/arxiv.0802.2813
    Conference Papers | 2007
    Lansbergen GP; Sellier H; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2007, 'One-dimensional sub-threshold channels in nanoscale triple-gate silicon transistors', in Jantsch W; Schaffler F (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Vienna, AUSTRIA, pp. 1397 - 1398, presented at 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, 24 - 28 July 2006, http://dx.doi.org/10.1063/1.2730426
    Conference Papers | 2006
    Lansbergen GP; Sellier H; Collaer N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', in 2006 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, VOLS 1 AND 2, IEEE, AUSTRALIA, Brisbane, pp. 675 - +, presented at International Conference on Nanoscience and Nanotechnology, AUSTRALIA, Brisbane, 03 July 2006 - 07 July 2006, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000249051500174&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
    Preprints | 2006
    2006, Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped Metal-Phthalocyanine compounds, , http://dx.doi.org/10.48550/arxiv.cond-mat/0602329
    Preprints | 2006
    2006, Evolution of the conductivity of potassium-doped pentacene films, , http://dx.doi.org/10.48550/arxiv.cond-mat/0603261
    Preprints | 2006
    2006, Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors, , http://dx.doi.org/10.48550/arxiv.cond-mat/0603430
    Preprints | 2006
    2006, Transport spectroscopy of a single dopant in a gated silicon nanowire, , http://dx.doi.org/10.48550/arxiv.cond-mat/0608159
    Conference Papers | 2005
    Caro J; Smit GD J; Sellier H; Loo R; Caymax M; Rogge S; Klapwijk TM, 2005, 'Towards tunneling through a single dopant atom', in Menendez J; VanDeWalle CG (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Flagstaff, AZ, pp. 1587 - 1588, presented at 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, AZ, 26 - 30 July 2004, http://dx.doi.org/10.1063/1.1994725
    Preprints | 2005
    2005, Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors, , http://dx.doi.org/10.48550/arxiv.cond-mat/0503282
    Preprints | 2005
    2005, Competing periodicities in fractionally filled one-dimensional bands, , http://dx.doi.org/10.48550/arxiv.cond-mat/0510574
    Preprints | 2005
    2005, Ga-induced atom wire formation and passivation of stepped Si(112), , http://dx.doi.org/10.48550/arxiv.cond-mat/0505343
    Preprints | 2004
    2004, Electronic transport through electron-doped Metal-Phthalocyanine Materials, , http://dx.doi.org/10.48550/arxiv.cond-mat/0401036
    Preprints | 2004
    2004, Formation of atom wires on vicinal silicon, , http://dx.doi.org/10.48550/arxiv.cond-mat/0404285
    Preprints | 2003
    2003, Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier, , http://dx.doi.org/10.48550/arxiv.cond-mat/0309139
    Preprints | 2002
    2002, Single domain transport measurements of C60 films, , http://dx.doi.org/10.48550/arxiv.cond-mat/0206221
    Conference Papers | 2000
    Bisch C; Rogge S; Melin T; Janssen GC A M, 2000, 'Selective aluminum CVD on Si(100) from DMAH', in Gonis A; Turchi PE A; Ardell AJ (eds.), Materials Research Society Symposium - Proceedings, MATERIALS RESEARCH SOCIETY, BOSTON, MA, pp. 141 - 146, presented at Symposium on Nucleation and Growth Processes in Materials held at the 1999 MRS Fall Meeting, BOSTON, MA, 29 November - 01 December 1999, http://dx.doi.org/10.1557/PROC-580-141
    Conference Papers | 1999
    Palasantzas G; Ilge B; Rogge S; Geerligs LJ, 1999, 'Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface', in Microelectronic Engineering, pp. 133 - 136, http://dx.doi.org/10.1016/S0167-9317(99)00035-0
    Conference Papers | 1992
    TIGNER B; SALVINO DJ; ROGGE S; OSHEROFF DD, 1992, 'LOW-TEMPERATURE HISTORY-DEPENDENT DIELECTRIC-CONSTANT IN AMORPHOUS SIO2 AND SIO1.8 FILMS', in Meissner M; Pohl RO (ed.), PHONON SCATTERING IN CONDENSED MATTER VII, SPRINGER-VERLAG BERLIN, NY, CORNELL UNIV, ITHACA, pp. 285 - 286, presented at 7th International Conference on Phonon Scattering in Condensed Matter, NY, CORNELL UNIV, ITHACA, 03 August 1992 - 07 August 1992, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993BB68D00112&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
    Conference Papers | 1959
    1959, 'SENSITOMETRIC EVALUATION WITH BASIC DATA PROCESSING EQUIPMENT', in PHOTOGRAPHIC SCIENCE AND ENGINEERING, I S & T - SOC IMAGING SCIENCE TECHNOLOGY, pp. 250 - 250, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1959XG21500026&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

2000 Fellow of the Royal Dutch Academy of Science (KNAW)

2010 ARC Future Fellow (professorial level)

2015 Distinguished Professorship (Scientia Professor) UNSW

2015 Fellow Australian Institute of Physics (FAIP)

2015 Fellow Royal Society of New South Wales (FRSN)

2016 Fellow of the American Physical Society (FAPS)