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Dr Yu-Ling Hsueh
Postdoctoral Fellow

Dr Yu-Ling Hsueh

Science
School of Physics

Yu-Ling Hsueh obtained her PhD degree in Electrical and Computer Engineering from Purdue University, USA. She joined UNSW as a postdoctoral research associate in January 2020. Her work is about modelling and theoretical development of the properties of donor-spin-quantum-bits in silicon to help design optimized quantum computer building blocks.
E-mail
y.hsueh@unsw.edu.au
  • Journal articles | 2022
    Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, vol. 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007
    Journal articles | 2022
    Tankasala A; Voisin B; Kembrey Z; Salfi J; Hsueh YL; Osika EN; Rogge S; Rahman R, 2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, vol. 105, http://dx.doi.org/10.1103/PhysRevB.105.155158
    Journal articles | 2018
    Ameen TA; Ilatikhameneh H; Tankasala A; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Rahman R; Klimeck G, 2018, 'Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot', Beilstein Journal of Nanotechnology, vol. 9, pp. 1075 - 1084, http://dx.doi.org/10.3762/bjnano.9.99
    Journal articles | 2018
    Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', npj Quantum Information, vol. 4, http://dx.doi.org/10.1038/s41534-018-0111-1
    Journal articles | 2017
    Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, vol. 3, http://dx.doi.org/10.1126/sciadv.1602811
    Journal articles | 2015
    Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, vol. 106, http://dx.doi.org/10.1063/1.4921640
    Journal articles | 2014
    Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.246406
  • Preprints | 2021
    Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon
    Conference Papers | 2017
    Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Electron spin relaxation of single phosphorus donors and donor clusters in atomically engineered silicon devices', in 2017 Silicon Nanoelectronics Workshop, SNW 2017, pp. 23 - 24, http://dx.doi.org/10.23919/SNW.2017.8242278
    Preprints | 2015
    Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon
    Conference Papers | 2014
    Ameen T; Ilatikhameneh H; Charles J; Hsueh Y; Chen S; Fonseca J; Povolotskyi M; Rahman R; Klimeck G, 2014, 'Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots', in Proceedings of the IEEE Conference on Nanotechnology, pp. 921 - 924, http://dx.doi.org/10.1109/NANO.2014.6968137