Yu-Ling Hsueh obtained her PhD degree in Electrical and Computer Engineering from Purdue University, USA. She joined UNSW as a postdoctoral research associate in January 2020. Her work is about modelling and theoretical development of the properties of donor-spin-quantum-bits in silicon to help design optimized quantum computer building blocks.
Hsueh YL; Kranz L; Keith D; Monir S; Chung Y; Gorman SK; Rahman R; Simmons MY, 2023, 'Hyperfine-mediated spin relaxation in donor-atom qubits in silicon', Physical Review Research, 5, http://dx.doi.org/10.1103/PhysRevResearch.5.023043
Journal articles | 2023
Jones MT; Monir MS; Krauth FN; Macha P; Hsueh YL; Worrall A; Keizer JG; Kranz L; Gorman SK; Chung Y; Rahman R; Simmons MY, 2023, 'Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates', ACS Nano, 17, pp. 22601 - 22610, http://dx.doi.org/10.1021/acsnano.3c06668
Journal articles | 2023
Krishnan R; Biswas S; Hsueh YL; Ma H; Rahman R; Weber B, 2023, 'Spin-Valley Locking for In-Gap Quantum Dots in a MoS2 Transistor', Nano Letters, 23, pp. 6171 - 6177, http://dx.doi.org/10.1021/acs.nanolett.3c01779
Journal articles | 2023
Sun W; Bharadwaj S; Yang LP; Hsueh YL; Wang Y; Jiao D; Rahman R; Jacob Z, 2023, 'Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.064038
Journal articles | 2022
Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach', Communications Physics, 5, http://dx.doi.org/10.1038/s42005-022-00948-6
Journal articles | 2022
Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Author Correction: Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach (Communications Physics, (2022), 5, 1, (165), 10.1038/s42005-022-00948-6)', Communications Physics, 5, http://dx.doi.org/10.1038/s42005-022-01014-x
Journal articles | 2022
Osika EN; Gorman SK; Monir S; Hsueh YL; Borscz M; Geng H; Thorgrimsson B; Simmons MY; Rahman R, 2022, 'Shelving and latching spin readout in atom qubits in silicon', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.075418
Ameen TA; Ilatikhameneh H; Tankasala A; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Rahman R; Klimeck G, 2018, 'Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot', Beilstein Journal of Nanotechnology, 9, pp. 1075 - 1084, http://dx.doi.org/10.3762/bjnano.9.99
Journal articles | 2018
Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', Npj Quantum Information, 4, http://dx.doi.org/10.1038/s41534-018-0111-1
Journal articles | 2017
Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, 3, http://dx.doi.org/10.1126/sciadv.1602811
Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R; Buch H, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, 113, pp. 246406, http://dx.doi.org/10.1103/PhysRevLett.113.246406
Preprints | 2024
Krishnan R; Gan BY; Hsueh Y-L; Huq AMS-E; Kenny J; Rahman R; Koh TS; Simmons MY; Weber B, 2024, Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon, http://dx.doi.org/10.48550/arxiv.2404.15762
Preprints | 2023
Krishnan R; Biswas S; Hsueh Y-L; Ma H; Rahman R; Weber B, 2023, Spin-valley locking for in-gap quantum dots in a MoS2 transistor, http://dx.doi.org/10.48550/arxiv.2306.13542
Sun W; Bharadwaj S; Yang L-P; Hsueh Y-L; Wang Y; Jiao D; Rahman R; Jacob Z, 2022, Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations, http://dx.doi.org/10.48550/arxiv.2207.09441
Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Electron spin relaxation of single phosphorus donors and donor clusters in atomically engineered silicon devices', in 2017 Silicon Nanoelectronics Workshop Snw 2017, pp. 23 - 24, http://dx.doi.org/10.23919/SNW.2017.8242278
Preprints | 2015
Ameen T; Ilatikhameneh H; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Wenner BR; Rahman R; Klimeck G, 2015, Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots, http://dx.doi.org/10.48550/arxiv.1502.07726
Preprints | 2015
Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Spin-lattice relaxation times of single donors and donor clusters in silicon, http://dx.doi.org/10.48550/arxiv.1501.04089
Ameen T; Ilatikhameneh H; Charles J; Hsueh Y; Chen S; Fonseca J; Povolotskyi M; Rahman R; Klimeck G, 2014, 'Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots', in Proceedings of the IEEE Conference on Nanotechnology, pp. 921 - 924, http://dx.doi.org/10.1109/NANO.2014.6968137
