Dr Yu-Ling Hsueh

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Yu-Ling Hsueh obtained her PhD degree in Electrical and Computer Engineering from Purdue University, USA. She joined UNSW as a postdoctoral research associate in January 2020. Her work is about modelling and theoretical development of the properties of donor-spin-quantum-bits in silicon to help design optimized quantum computer building blocks.

E-mail

y.hsueh@unsw.edu.au

Journal articles | 2023

Donnelly MB; Munia MM; Keizer JG; Chung Y; Huq AMSE; Osika EN; Hsueh YL; Rahman R; Simmons MY, 2023, 'Multi-Scale Modeling of Tunneling in Nanoscale Atomically Precise Si:P Tunnel Junctions', Advanced Functional Materials, 33, pp. 2214011 - 2214011, http://dx.doi.org/10.1002/adfm.202214011

Journal articles | 2023

Hsueh YL; Kranz L; Keith D; Monir S; Chung Y; Gorman SK; Rahman R; Simmons MY, 2023, 'Hyperfine-mediated spin relaxation in donor-atom qubits in silicon', Physical Review Research, 5, http://dx.doi.org/10.1103/PhysRevResearch.5.023043

Journal articles | 2023

Krishnan R; Biswas S; Hsueh YL; Ma H; Rahman R; Weber B, 2023, 'Spin-Valley Locking for In-Gap Quantum Dots in a MoS2 Transistor', Nano Letters, 23, pp. 6171 - 6177, http://dx.doi.org/10.1021/acs.nanolett.3c01779

Journal articles | 2023

Sun W; Bharadwaj S; Yang LP; Hsueh YL; Wang Y; Jiao D; Rahman R; Jacob Z, 2023, 'Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.064038

Journal articles | 2022

Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach', Communications Physics, 5, http://dx.doi.org/10.1038/s42005-022-00948-6

Journal articles | 2022

Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Author Correction: Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach (Communications Physics, (2022), 5, 1, (165), 10.1038/s42005-022-00948-6)', Communications Physics, 5, http://dx.doi.org/10.1038/s42005-022-01014-x

Journal articles | 2022

Osika EN; Gorman SK; Monir S; Hsueh YL; Borscz M; Geng H; Thorgrimsson B; Simmons MY; Rahman R, 2022, 'Shelving and latching spin readout in atom qubits in silicon', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.075418

Journal articles | 2022

Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007

Journal articles | 2022

Tankasala A; Voisin B; Kembrey Z; Salfi J; Hsueh YL; Osika EN; Rogge S; Rahman R, 2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.155158

Journal articles | 2018

Ameen TA; Ilatikhameneh H; Tankasala A; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Rahman R; Klimeck G, 2018, 'Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot', Beilstein Journal of Nanotechnology, 9, pp. 1075 - 1084, http://dx.doi.org/10.3762/bjnano.9.99

Journal articles | 2018

Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', npj Quantum Information, 4, http://dx.doi.org/10.1038/s41534-018-0111-1

Journal articles | 2017

Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, 3, http://dx.doi.org/10.1126/sciadv.1602811

Journal articles | 2015

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, 106, http://dx.doi.org/10.1063/1.4921640

Journal articles | 2014

Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, 113, http://dx.doi.org/10.1103/PhysRevLett.113.246406
Preprints | 2022

Sun W; Bharadwaj S; Yang L-P; Hsueh Y-L; Wang Y; Jiao D; Rahman R; Jacob Z, 2022, Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations, , http://dx.doi.org/10.48550/arxiv.2207.09441

Preprints | 2021

Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02904

Conference Papers | 2017

Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Electron spin relaxation of single phosphorus donors and donor clusters in atomically engineered silicon devices', in 2017 Silicon Nanoelectronics Workshop, SNW 2017, pp. 23 - 24, http://dx.doi.org/10.23919/SNW.2017.8242278

Preprints | 2015

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, , http://dx.doi.org/10.48550/arxiv.1501.05669

Conference Papers | 2014

Ameen T; Ilatikhameneh H; Charles J; Hsueh Y; Chen S; Fonseca J; Povolotskyi M; Rahman R; Klimeck G, 2014, 'Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots', in Proceedings of the IEEE Conference on Nanotechnology, pp. 921 - 924, http://dx.doi.org/10.1109/NANO.2014.6968137