Research Staff Level B

Dr Chris Escott

Electrical Engineering and Telecommunications

Dr Chris Escott is a researcher in the Dzurak research group at the University of New South Wales in Sydney. His main interests are in silicon quantum dot device engineering, with experience in modelling, simulation and characterisation.

PhD, masters and honours projects are available.

  • Journal articles | 2022
    Saraiva A; Lim WH; Yang CH; Escott CC; Laucht A; Dzurak AS, 2022, 'Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits', Advanced Functional Materials, 32,
    Journal articles | 2021
    Huang JY; Lim WH; Leon RCC; Yang CH; Hudson FE; Escott CC; Saraiva A; Dzurak AS; Laucht A, 2021, 'A High-Sensitivity Charge Sensor for Silicon Qubits above 1 K', Nano Letters, 21, pp. 6328 - 6335,
    Journal articles | 2020
    Gilbert W; Saraiva A; Lim WH; Yang CH; Laucht A; Bertrand B; Rambal N; Hutin L; Escott CC; Vinet M; Dzurak AS, 2020, 'Single-electron operation of a silicon-CMOS 2 × 2 quantum dot array with integrated charge sensing', Nano Letters, 20, pp. 7882 - 7888,
    Journal articles | 2010
    Escott CC; Zwanenburg FA; Morello A, 2010, 'Resonant tunnelling features in quantum dots', Nanotechnology, 21, pp. 274018,
    Journal articles | 2010
    Huebl H; Nugroho C; Morello A; Escott CC; Eriksson M; Yang C; Jamieson DN; Clark RG; Dzurak A, 2010, 'Electron tunnel rates in a donor-silicon single electron transistor hybrid', Physical Review - Section B - Condensed Matter, 81, pp. 235318,
    Journal articles | 2010
    Morello A; Pla J; Zwanenburg FA; Chan KW; Tan K; Huebl H; Mottonen M; Nugroho C; Yang C; Van donkeelar J; Alves A; Jamieson DN; Escott CC; Hollenberg L; Clark RG; Dzurak A, 2010, 'Single-shot readout of an electron spin in silicon', Nature, 467, pp. 687 - 691,
    Journal articles | 2009
    Morello A; Escott CC; Huebl H; Willems Van Beveren LH; Hollenberg L; Jamieson DN; Dzurak A; Clark RG, 2009, 'Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 081307-1 - 081307-4,
    Journal articles | 2008
    Hudson FE; Ferguson AJ; Escott CC; Yang C; Jamieson DN; Clark RG; Dzurak A, 2008, 'Gate-controlled charge transfer in Si:P Double quantum dots', Nanotechnology, 19, pp. 195402 - 195496
    Journal articles | 2007
    Andresen SE; Brenner R; Wellard CJ; Yang C; Hopf T; Escott CC; Dzurak A; Jamieson DN; Hollenberg L; Clark RG, 2007, 'Charge state control and relaxation in an atomically doped silicon device', Nano Letters, 7, pp. 2000 - 2003,
    Journal articles | 2007
    Escott CC; Hudson FE; Chan VC; Petersson KD; Dzurak A; Clark RG, 2007, 'Scaling of ion implanted Si:P single electron devices', Nanotechnology, 18, pp. 235401 - 235405,
    Journal articles | 2005
    Lee KH; Greentree AD; Escott CC; Dzurak A; Clark RG; Dinale J, 2005, 'Modelling single electron transfer in Si : P double quantum dots', Nanotechnology, 16, pp. 74 - 81
  • Patents | 2019
    Morello A; Huebl H-G; Escott C; Jamieson D; Hollenberg L; van Beveren L; Clark R; Dzurak A, 2019, Control and Readout of Electron or Hole Spin, Patent No. 2248157
    Conference Papers | 2011
    Lim WH; Zwanenburg FA; Yang CH; Huebl H; Möttönen M; Chan KW; Escott CC; Morello A; Dzurak AS, 2011, 'Independent control of dot occupancy and reservoir electron density in a one-electron quantum dot', in AIP Conference Proceedings, pp. 349 - 350,