Dr Chris Escott

Research Staff Level B
Electrical Engineering and Telecommunications

Dr Chris Escott is a researcher in the Dzurak research group at the University of New South Wales in Sydney. His main interests are in silicon quantum dot device engineering, with experience in modelling, simulation and characterisation.

PhD, masters and honours projects are available.

  • Journal articles | 2023
    Gilbert W; Tanttu T; Lim WH; Feng MK; Huang JY; Cifuentes JD; Serrano S; Mai PY; Leon RCC; Escott CC; Itoh KM; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2023, 'On-demand electrical control of spin qubits', Nature Nanotechnology, 18, pp. 131 - 136, http://dx.doi.org/10.1038/s41565-022-01280-4
    Journal articles | 2023
    Jin IK; Kumar K; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Dzurak AS; Hamilton AR; Liles SD, 2023, 'Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform', Nano Letters, 23, pp. 1261 - 1266, http://dx.doi.org/10.1021/acs.nanolett.2c04417
    Journal articles | 2023
    Wang Z; Feng MK; Serrano S; Gilbert W; Leon RCC; Tanttu T; Mai P; Liang D; Huang JY; Su Y; Lim WH; Hudson FE; Escott CC; Morello A; Yang CH; Dzurak AS; Saraiva A; Laucht A, 2023, 'Jellybean Quantum Dots in Silicon for Qubit Coupling and On-Chip Quantum Chemistry', Advanced Materials, http://dx.doi.org/10.1002/adma.202208557
    Journal articles | 2022
    Saraiva A; Lim WH; Yang CH; Escott CC; Laucht A; Dzurak AS, 2022, 'Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits', Advanced Functional Materials, 32, http://dx.doi.org/10.1002/adfm.202105488
    Journal articles | 2021
    Huang JY; Lim WH; Leon RCC; Yang CH; Hudson FE; Escott CC; Saraiva A; Dzurak AS; Laucht A, 2021, 'A High-Sensitivity Charge Sensor for Silicon Qubits above 1 K', Nano Letters, 21, pp. 6328 - 6335, http://dx.doi.org/10.1021/acs.nanolett.1c01003
    Journal articles | 2020
    Gilbert W; Saraiva A; Lim WH; Yang CH; Laucht A; Bertrand B; Rambal N; Hutin L; Escott CC; Vinet M; Dzurak AS, 2020, 'Single-electron operation of a silicon-CMOS 2 × 2 quantum dot array with integrated charge sensing', Nano Letters, 20, pp. 7882 - 7888, http://dx.doi.org/10.1021/acs.nanolett.0c02397
    Journal articles | 2010
    Escott CC; Zwanenburg FA; Morello A, 2010, 'Resonant tunnelling features in quantum dots', Nanotechnology, 21, pp. 274018, http://dx.doi.org/10.1088/0957-4484/21/27/274018
    Journal articles | 2010
    Huebl H; Nugroho C; Morello A; Escott CC; Eriksson M; Yang C; Jamieson DN; Clark RG; Dzurak A, 2010, 'Electron tunnel rates in a donor-silicon single electron transistor hybrid', Physical Review - Section B - Condensed Matter, 81, pp. 235318, http://dx.doi.org/10.1103/PhysRevB.81.235318
    Journal articles | 2010
    Morello A; Pla J; Zwanenburg FA; Chan KW; Tan K; Huebl H; Mottonen M; Nugroho C; Yang C; Van donkeelar J; Alves A; Jamieson DN; Escott CC; Hollenberg L; Clark RG; Dzurak A, 2010, 'Single-shot readout of an electron spin in silicon', Nature, 467, pp. 687 - 691, http://dx.doi.org/10.1038/nature09392
    Journal articles | 2009
    Morello A; Escott CC; Huebl H; Willems Van Beveren LH; Hollenberg L; Jamieson DN; Dzurak A; Clark RG, 2009, 'Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 081307-1 - 081307-4, http://dx.doi.org/10.1103/PhysRevB.80.081307
    Journal articles | 2008
    Hudson FE; Ferguson AJ; Escott CC; Yang C; Jamieson DN; Clark RG; Dzurak A, 2008, 'Gate-controlled charge transfer in Si:P Double quantum dots', Nanotechnology, 19, pp. 195402 - 195496
    Journal articles | 2007
    Andresen SE; Brenner R; Wellard CJ; Yang C; Hopf T; Escott CC; Dzurak A; Jamieson DN; Hollenberg L; Clark RG, 2007, 'Charge state control and relaxation in an atomically doped silicon device', Nano Letters, 7, pp. 2000 - 2003, http://dx.doi.org/10.1021/nl070797t
    Journal articles | 2007
    Escott CC; Hudson FE; Chan VC; Petersson KD; Dzurak A; Clark RG, 2007, 'Scaling of ion implanted Si:P single electron devices', Nanotechnology, 18, pp. 235401 - 235405, http://dx.doi.org/10.1088/0957-4484/18/23/235401
    Journal articles | 2005
    Lee KH; Greentree AD; Escott CC; Dzurak A; Clark RG; Dinale J, 2005, 'Modelling single electron transfer in Si : P double quantum dots', Nanotechnology, 16, pp. 74 - 81
  • Patents | 2019
    Morello A; Huebl H-G; Escott C; Jamieson D; Hollenberg L; van Beveren L; Clark R; Dzurak A, 2019, Control and Readout of Electron or Hole Spin, Patent No. 2248157
    Conference Papers | 2011
    Lim WH; Zwanenburg FA; Yang CH; Huebl H; Möttönen M; Chan KW; Escott CC; Morello A; Dzurak AS, 2011, 'Independent control of dot occupancy and reservoir electron density in a one-electron quantum dot', in AIP Conference Proceedings, pp. 349 - 350, http://dx.doi.org/10.1063/1.3666397