Research Staff Level B

Dr Chris Escott

Engineering
Sch: Electrical Eng & Telecom

Dr Chris Escott is a researcher in the Dzurak research group at the University of New South Wales in Sydney. His main interests are in silicon quantum dot device engineering, with experience in modelling, simulation and characterisation.

PhD, masters and honours projects are available.

Publications

  • Journal articles | 2020
    Dr Chris Escott
    Gilbert W; Saraiva A; Lim WH; Yang CH; Laucht A; Bertrand B; Rambal N; Hutin L; Escott CC; Vinet M; Dzurak AS, 2020, 'Single-Electron Operation of a Silicon-CMOS 2 × 2 Quantum Dot Array with Integrated Charge Sensing', Nano Letters, http://dx.doi.org/10.1021/acs.nanolett.0c02397
    Journal articles | 2010
    Dr Chris Escott
    Huebl H; Nugroho C; Morello A; Escott CC; Eriksson M; Yang C; Jamieson DN; Clark RG; Dzurak A, 2010, 'Electron tunnel rates in a donor-silicon single electron transistor hybrid', Physical Review - Section B - Condensed Matter, vol. 81, pp. 235318, http://dx.doi.org/10.1103/PhysRevB.81.235318
    Journal articles | 2010
    Dr Chris Escott
    Escott CC; Zwanenburg FA; Morello A, 2010, 'Resonant tunnelling features in quantum dots', Nanotechnology, vol. 21, pp. 274018, http://dx.doi.org/10.1088/0957-4484/21/27/274018
    Journal articles | 2010
    Dr Chris Escott
    Morello A; Pla J; Zwanenburg FA; Chan KW; Tan K; Huebl H; Mottonen M; Nugroho C; Yang C; Van donkeelar J; Alves A; Jamieson DN; Escott CC; Hollenberg L; Clark RG; Dzurak A, 2010, 'Single-shot readout of an electron spin in silicon', Nature, vol. 467, pp. 687 - 691, http://dx.doi.org/10.1038/nature09392
    Journal articles | 2009
    Dr Chris Escott
    Morello A; Escott CC; Huebl H; Willems Van Beveren LH; Hollenberg L; Jamieson DN; Dzurak A; Clark RG, 2009, 'Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon', Physical Review - Section B - Condensed Matter, vol. 80, pp. 081307-1 - 081307-4, http://dx.doi.org/10.1103/PhysRevB.80.081307
    Journal articles | 2008
    Dr Chris Escott
    Hudson FE; Ferguson AJ; Escott CC; Yang C; Jamieson DN; Clark RG; Dzurak A, 2008, 'Gate-controlled charge transfer in Si:P Double quantum dots', Nanotechnology, vol. 19, pp. 195402 - 195496, http://dx.doi.org/10.1088/0957-4484/19/19/195402
    Journal articles | 2007
    Dr Chris Escott
    Escott CC; Hudson FE; Chan VC; Petersson KD; Dzurak A; Clark RG, 2007, 'Scaling of ion implanted Si:P single electron devices', Nanotechnology, vol. 18, pp. 235401 - 235405, http://dx.doi.org/10.1088/0957-4484/18/23/235401
    Journal articles | 2007
    Dr Chris Escott
    Andresen SE; Brenner R; Wellard CJ; Yang C; Hopf T; Escott CC; Dzurak A; Jamieson DN; Hollenberg L; Clark RG, 2007, 'Charge state control and relaxation in an atomically doped silicon device', Nano Letters, vol. 7, pp. 2000 - 2003, http://dx.doi.org/10.1021/nl070797t
    Journal articles | 2005
    Dr Chris Escott
    Lee KH; Greentree AD; Escott CC; Dzurak A; Clark RG; Dinale J, 2005, 'Modelling single electron transfer in Si : P double quantum dots', Nanotechnology, vol. 16, pp. 74 - 81, http://dx.doi.org/10.1088/0957-4484/16/1/016
  • Patents | 2019
    Dr Chris Escott
    Morello A; Huebl H-G; Escott C; Jamieson D; Hollenberg L; van Beveren L; Clark R; Dzurak A, 2019, Control and Readout of Electron or Hole Spin, Patent No. 2248157
    Conference Papers | 2011
    Dr Chris Escott
    Lim WH; Zwanenburg FA; Yang CH; Huebl H; Möttönen M; Chan KW; Escott CC; Morello A; Dzurak AS, 2011, 'Independent control of dot occupancy and reservoir electron density in a one-electron quantum dot', in AIP Conference Proceedings, pp. 349 - 350, http://dx.doi.org/10.1063/1.3666397

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