Dr Chris Escott

Research Staff Level B
Engineering
Electrical Engineering and Telecommunications

Dr Chris Escott is a researcher in the Dzurak research group at the University of New South Wales in Sydney. His main interests are in silicon quantum dot device engineering, with experience in modelling, simulation and characterisation.

PhD, masters and honours projects are available.

  • Journal articles | 2025
    Bartee SK; Gilbert W; Zuo K; Das K; Tanttu T; Yang CH; Dumoulin Stuyck N; Pauka SJ; Su RY; Lim WH; Serrano S; Escott CC; Hudson FE; Itoh KM; Laucht A; Dzurak AS; Reilly DJ, 2025, 'Spin-qubit control with a milli-kelvin CMOS chip', Nature, 643, pp. 382 - 387, http://dx.doi.org/10.1038/s41586-025-09157-x
    Journal articles | 2025
    Han Lim W; Tanttu T; Youn T; Huang JY; Serrano S; Dickie A; Yianni S; Hudson FE; Escott CC; Yang CH; Laucht A; Saraiva A; Chan KW; Cifuentes JD; Dzurak AS, 2025, 'A 2 × 2 Quantum Dot Array in Silicon with Fully Tunable Pairwise Interdot Coupling', Nano Letters, 25, pp. 10263 - 10269, http://dx.doi.org/10.1021/acs.nanolett.4c06264
    Journal articles | 2025
    Mai PY; Pereira PH; Alonso LA; Leon RCC; Yang CH; Hwang JCC; Dunmore D; Lemyre JC; Tanttu T; Huang W; Chan KW; Tan KY; Cifuentes JD; Hudson FE; Itoh KM; Laucht A; Pioro-Ladrière M; Escott CC; Dzurak A; Saraiva A; De Melo E Souza R; Feng MK, 2025, 'Enhancement of electric drive in silicon quantum dots with electric quadrupole spin resonance', Physical Review Research, 7, http://dx.doi.org/10.1103/gk5h-l7q4
    Journal articles | 2025
    Steinacker P; Dumoulin Stuyck N; Lim WH; Tanttu T; Feng MK; Serrano S; Nickl A; Candido M; Cifuentes JD; Vahapoglu E; Bartee SK; Hudson FE; Chan KW; Kubicek S; Jussot J; Canvel Y; Beyne S; Shimura Y; Loo R; Godfrin C; Raes B; Baudot S; Wan D; Laucht A; Yang CH; Saraiva A; Escott CC; De Greve K; Dzurak AS, 2025, 'Industry-compatible silicon spin-qubit unit cells exceeding 99% fidelity', Nature, 646, pp. 81 - 87, http://dx.doi.org/10.1038/s41586-025-09531-9
    Journal articles | 2025
    Steinacker P; Tanttu T; Lim WH; Dumoulin Stuyck N; Feng MK; Serrano S; Vahapoglu E; Su RY; Huang JY; Jones C; Itoh KM; Hudson FE; Escott CC; Morello A; Saraiva A; Yang CH; Dzurak AS; Laucht A, 2025, 'Bell inequality violation in gate-defined quantum dots', Nature Communications, 16, http://dx.doi.org/10.1038/s41467-025-57987-0
    Journal articles | 2024
    Cifuentes JD; Tanttu T; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Serrano S; Otter D; Dunmore D; Mai PY; Schlattner F; Feng MK; Itoh K; Abrosimov N; Pohl HJ; Thewalt M; Laucht A; Yang CH; Escott CC; Lim WH; Hudson FE; Rahman R; Dzurak AS; Saraiva A, 2024, 'Bounds to electron spin qubit variability for scalable CMOS architectures', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-48557-x
    Journal articles | 2024
    Cifuentes JD; Tanttu T; Steinacker P; Serrano S; Hansen I; Slack-Smith JP; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Stuyck ND; Itoh K; Abrosimov N; Pohl HJ; Thewalt M; Laucht A; Yang CH; Escott CC; Hudson FE; Lim WH; Rahman R; Dzurak AS; Saraiva A, 2024, 'Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays', Physical Review B, 110, http://dx.doi.org/10.1103/PhysRevB.110.125414
    Journal articles | 2024
    Huang JY; Su RY; Lim WH; Feng MK; van Straaten B; Severin B; Gilbert W; Dumoulin Stuyck N; Tanttu T; Serrano S; Cifuentes JD; Hansen I; Seedhouse AE; Vahapoglu E; Leon RCC; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Escott CC; Ares N; Bartlett SD; Morello A; Saraiva A; Laucht A; Dzurak AS; Yang CH, 2024, 'High-fidelity spin qubit operation and algorithmic initialization above 1 K', Nature, 627, pp. 772 - 777, http://dx.doi.org/10.1038/s41586-024-07160-2
    Journal articles | 2024
    Liles SD; Halverson DJ; Wang Z; Shamim A; Eggli RS; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Culcer D; Dzurak AS; Hamilton AR, 2024, 'A singlet-triplet hole-spin qubit in MOS silicon', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-51902-9
    Journal articles | 2024
    Serrano S; Feng MK; Lim WH; Seedhouse AE; Tanttu T; Gilbert W; Escott CC; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Saraiva A; Dzurak AS; Laucht A, 2024, 'Improved Single-Shot Qubit Readout Using Twin rf-SET Charge Correlations', Prx Quantum, 5, http://dx.doi.org/10.1103/PRXQuantum.5.010301
    Journal articles | 2024
    Tanttu T; Lim WH; Huang JY; Dumoulin Stuyck N; Gilbert W; Su RY; Feng MK; Cifuentes JD; Seedhouse AE; Seritan SK; Ostrove CI; Rudinger KM; Leon RCC; Huang W; Escott CC; Itoh KM; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Blume-Kohout R; Bartlett SD; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2024, 'Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots', Nature Physics, 20, pp. 1804 - 1809, http://dx.doi.org/10.1038/s41567-024-02614-w
    Journal articles | 2023
    Cifuentes JD; Mai PY; Schlattner F; Ercan HE; Feng M; Escott CC; Dzurak AS; Saraiva A, 2023, 'Path-integral simulation of exchange interactions in CMOS spin qubits', Physical Review B, 108, http://dx.doi.org/10.1103/PhysRevB.108.155413
    Journal articles | 2023
    Gilbert W; Tanttu T; Lim WH; Feng MK; Huang JY; Cifuentes JD; Serrano S; Mai PY; Leon RCC; Escott CC; Itoh KM; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2023, 'On-demand electrical control of spin qubits', Nature Nanotechnology, 18, pp. 131 - 136, http://dx.doi.org/10.1038/s41565-022-01280-4
    Journal articles | 2023
    Jin IK; Kumar K; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Dzurak AS; Hamilton AR; Liles SD, 2023, 'Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform', Nano Letters, 23, pp. 1261 - 1266, http://dx.doi.org/10.1021/acs.nanolett.2c04417
    Journal articles | 2023
    Wang Z; Feng MK; Serrano S; Gilbert W; Leon RCC; Tanttu T; Mai P; Liang D; Huang JY; Su Y; Lim WH; Hudson FE; Escott CC; Morello A; Yang CH; Dzurak AS; Saraiva A; Laucht A, 2023, 'Jellybean Quantum Dots in Silicon for Qubit Coupling and On-Chip Quantum Chemistry', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202208557
    Journal articles | 2022
    Saraiva A; Lim WH; Yang CH; Escott CC; Laucht A; Dzurak AS, 2022, 'Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits', Advanced Functional Materials, 32, http://dx.doi.org/10.1002/adfm.202105488
    Journal articles | 2021
    Huang JY; Lim WH; Leon RCC; Yang CH; Hudson FE; Escott CC; Saraiva A; Dzurak AS; Laucht A, 2021, 'A High-Sensitivity Charge Sensor for Silicon Qubits above 1 K', Nano Letters, 21, pp. 6328 - 6335, http://dx.doi.org/10.1021/acs.nanolett.1c01003
    Journal articles | 2020
    Gilbert W; Saraiva A; Lim WH; Yang CH; Laucht A; Bertrand B; Rambal N; Hutin L; Escott CC; Vinet M; Dzurak AS, 2020, 'Single-electron operation of a silicon-CMOS 2 × 2 quantum dot array with integrated charge sensing', Nano Letters, 20, pp. 7882 - 7888, http://dx.doi.org/10.1021/acs.nanolett.0c02397
    Journal articles | 2010
    Escott CC; Zwanenburg FA; Morello A, 2010, 'Resonant tunnelling features in quantum dots', Nanotechnology, 21, pp. 274018, http://dx.doi.org/10.1088/0957-4484/21/27/274018
    Journal articles | 2010
    Huebl H; Nugroho C; Morello A; Escott CC; Eriksson M; Yang C; Jamieson DN; Clark RG; Dzurak A, 2010, 'Electron tunnel rates in a donor-silicon single electron transistor hybrid', Physical Review - Section B - Condensed Matter, 81, pp. 235318, http://dx.doi.org/10.1103/PhysRevB.81.235318
    Journal articles | 2010
    Morello A; Pla J; Zwanenburg FA; Chan KW; Tan K; Huebl H; Mottonen M; Nugroho C; Yang C; Van donkeelar J; Alves A; Jamieson DN; Escott CC; Hollenberg L; Clark RG; Dzurak A, 2010, 'Single-shot readout of an electron spin in silicon', Nature, 467, pp. 687 - 691, http://dx.doi.org/10.1038/nature09392
    Journal articles | 2009
    Morello A; Escott CC; Huebl H; Willems Van Beveren LH; Hollenberg L; Jamieson DN; Dzurak A; Clark RG, 2009, 'Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 081307-1 - 081307-4, http://dx.doi.org/10.1103/PhysRevB.80.081307
    Journal articles | 2008
    Hudson FE; Ferguson AJ; Escott CC; Yang C; Jamieson DN; Clark RG; Dzurak A, 2008, 'Gate-controlled charge transfer in Si:P Double quantum dots', Nanotechnology, 19, pp. 195402 - 195496
    Journal articles | 2007
    Andresen SE; Brenner R; Wellard CJ; Yang C; Hopf T; Escott CC; Dzurak A; Jamieson DN; Hollenberg L; Clark RG, 2007, 'Charge state control and relaxation in an atomically doped silicon device', Nano Letters, 7, pp. 2000 - 2003, http://dx.doi.org/10.1021/nl070797t
    Journal articles | 2007
    Escott CC; Hudson FE; Chan VC; Petersson KD; Dzurak A; Clark RG, 2007, 'Scaling of ion implanted Si:P single electron devices', Nanotechnology, 18, pp. 235401 - 235405, http://dx.doi.org/10.1088/0957-4484/18/23/235401
    Journal articles | 2005
    Lee KH; Greentree AD; Escott CC; Dzurak A; Clark RG; Dinale J, 2005, 'Modelling single electron transfer in Si : P double quantum dots', Nanotechnology, 16, pp. 74 - 81
  • Conference Papers | 2024
    Stuyck ND; Feng MK; Lim WH; Ramirez SS; Escott CC; Botzem T; Tanttu T; Yang CH; Saraiva A; Laucht A; Kubicek S; Jussot J; Beyne S; Raes B; Li R; Godfrin C; Wan D; De Greve K; Dzurak AS, 2024, 'Demonstration of 99.9% single qubit control fidelity of a silicon quantum dot spin qubit made in a 300 mm foundry process', in 2024 IEEE Silicon Nanoelectronics Workshop Snw 2024, pp. 11 - 12, http://dx.doi.org/10.1109/SNW63608.2024.10639218
    Preprints | 2021
    Huang JY; Lim WH; Leon RCC; Yang CH; Hudson FE; Escott CC; Saraiva A; Dzurak AS; Laucht A, 2021, A high-sensitivity charge sensor for silicon qubits above one kelvin, http://dx.doi.org/10.1021/acs.nanolett.1c01003
    Patents | 2019
    Morello A; Huebl H-G; Escott C; Jamieson D; Hollenberg L; van Beveren L; Clark R; Dzurak A, 2019, Control and Readout of Electron or Hole Spin, Patent No. 2248157
    Conference Papers | 2011
    Lim WH; Zwanenburg FA; Yang CH; Huebl H; Möttönen M; Chan KW; Escott CC; Morello A; Dzurak AS, 2011, 'Independent control of dot occupancy and reservoir electron density in a one-electron quantum dot', in Aip Conference Proceedings, pp. 349 - 350, http://dx.doi.org/10.1063/1.3666397