Dr Fiacre Rougieux
Senior Lecturer

Dr Fiacre Rougieux

Engineering
Photovoltaic and Renewable Energy Engineering

Bio: Fiacre Rougieux has a PhD from the Australian National University in the field of photovoltaics and semiconductor materials. Between 2012 and 2018, he was an ARENA Post-doctoral Fellowand subsequently an ARC DECRA fellow at the ANU where he developed high-efficiency and low-cost solar cell concepts including efficiency records and successfully developed a wide range of processes to remove defects in solar cells and improve their efficiency.

Fiacre is currently a Senior Lecturer at UNSW. He has published and co-authored more than 100 papers. His research interests include advanced solar cell processes, system design and solar cell, module and system degradation.

The goal of our team is to engineer the materials, device and systems required to accelerate our transition to a decarbonised and circular economy. Our work lies at the intersection of materials science, semiconductor physics, solar cells, modules and systems. As a result of intensified research activities, our international research network has grown significantly and we collaborate with many the leading photovoltaics laboratories across the globe, including student research exchanges. We also welcome international and domestic visitors in our group.

Some of our recent research successes include the development of advanced characterisation techniques to measure dilute defects in ultra-high efficiency solar cells, the successful development of novel defect imaging techniques for defects in semiconductors, the creation of advanced defect analysis capability (Deep Level Transient Spectroscopy) at UNSW and the development of new recombination analysis theoretical framework and advanced measurement methods to link strain and recombination activity in photovoltaic materials.

We are currently looking for students enthusiastic about producing technologies to diagnose and mitigate underperformance of photovoltaic cells, modules and systems.

For a detailed description of all our topics please email us directly.

We also welcome students to suggest their own research project.

 

Course:

Solar Cells SOLA3507

Applied PV SOLA2540

Phone
+61 2 93859834
Location
School of Photovoltaic and Renewable Energy Engineering The University of New South Wales Sydney, NSW, 2052
  • Journal articles | 2022
    Sharma AS; Pusch A; Nielsen MP; Römer U; Tayebjee MJY; Rougieux FE; Ekins-Daukes NJ, 2022, 'Constraints imposed by the sparse solar photon flux on upconversion and hot carrier solar cells', Solar Energy, vol. 237, pp. 44 - 51, http://dx.doi.org/10.1016/j.solener.2022.03.037
    Journal articles | 2022
    Siriwardhana M; Rougieux F; Basnet R; Nguyen HT; Macdonald D, 2022, 'Photoluminescence Spectroscopy of Thermal Donors and Oxygen Precipitates Formed in Czochralski Silicon at 450 °c', IEEE Journal of Photovoltaics, vol. 12, pp. 222 - 229, http://dx.doi.org/10.1109/JPHOTOV.2021.3126120
    Journal articles | 2022
    Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon', IEEE Journal of Photovoltaics, pp. 1 - 8, http://dx.doi.org/10.1109/JPHOTOV.2022.3195098
    Journal articles | 2022
    Zhou Z; Rougieux F; Siriwardhana M; Coletti G, 2022, 'Characterisation of striations in n-type silicon wafer processed with polysilicon contacts', Solar Energy Materials and Solar Cells, vol. 248, http://dx.doi.org/10.1016/j.solmat.2022.111965
    Journal articles | 2022
    Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2022, 'Electronic Properties of the Boron-Oxygen Defect Precursor of the Light-Induced Degradation in Silicon', IEEE Journal of Photovoltaics, vol. 12, pp. 1135 - 1141, http://dx.doi.org/10.1109/JPHOTOV.2022.3190769
    Journal articles | 2021
    Basnet R; Sio H; Siriwardhana M; Rougieux FE; Macdonald D, 2021, 'Ring-Like Defect Formation in N-Type Czochralski-Grown Silicon Wafers during Thermal Donor Formation', Physica Status Solidi (A) Applications and Materials Science, vol. 218, http://dx.doi.org/10.1002/pssa.202000587
    Journal articles | 2021
    Jafari S; Zhu Y; Rougieux F; De Guzman JAT; Markevich VP; Peaker AR; Hameiri Z, 2021, 'On the correlation between light-induced degradation and minority carrier traps in boron-doped Czochralski silicon', ACS Applied Materials & Interfaces, vol. 13, pp. 6140 - 6146, http://dx.doi.org/10.1021/acsami.0c17549
    Journal articles | 2021
    Siriwardhana M; Zhu Y; Hameiri Z; Macdonald D; Rougieux F, 2021, 'Photoconductance determination of carrier capture cross sections of slow traps in silicon through variable pulse filling', IEEE Journal of Photovoltaics, vol. 11, pp. 273 - 281, http://dx.doi.org/10.1109/JPHOTOV.2020.3043835
    Journal articles | 2021
    Sun C; Zhu Y; Juhl M; Yang W; Rougieux F; Hameiri Z; Macdonald D, 2021, 'The role of charge and recombination-enhanced defect reaction effects in the dissociation of FeB pairs in p-type silicon under carrier injection', Physica Status Solidi - Rapid Research Letters, vol. 15, pp. 2000520 - 2000520, http://dx.doi.org/10.1002/pssr.202000520
    Journal articles | 2021
    Tan X; Chen R; Rougieux FE, 2021, 'The Mechanism of Surface Passivation Degradation in SiO2/SiNxStack under Light and Elevated Temperature', IEEE Journal of Photovoltaics, vol. 11, pp. 1380 - 1387, http://dx.doi.org/10.1109/JPHOTOV.2021.3106881
    Journal articles | 2021
    Zhu Y; Rougieux F; Grant NE; De Guzman JAT; Murphy JD; Markevich VP; Coletti G; Peaker AR; Hameiri Z, 2021, 'Electrical characterization of thermally activated defects in n-type float-zone silicon', IEEE Journal of Photovoltaics, vol. 11, pp. 26 - 35, http://dx.doi.org/10.1109/jphotov.2020.3031382
    Journal articles | 2020
    Basnet R; Phang SP; Sun C; Rougieux FE; MacDonald D, 2020, 'Onset of ring defects in n-type Czochralski-grown silicon wafers', Journal of Applied Physics, vol. 127, http://dx.doi.org/10.1063/5.0005899
    Journal articles | 2020
    Basnet R; Weigand W; Yu ZJ; Sun C; Phang SP; Sio HC; Rougieux FE; Holman ZC; Macdonald D, 2020, 'Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells', Solar Energy Materials and Solar Cells, vol. 205, http://dx.doi.org/10.1016/j.solmat.2019.110287
    Journal articles | 2020
    Chen D; Hamer P; Kim M; Chan C; Ciesla nee Wenham A; Rougieux F; Zhang Y; Abbott M; Hallam B, 2020, 'Hydrogen-induced degradation: Explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon', Solar Energy Materials and Solar Cells, vol. 207, http://dx.doi.org/10.1016/j.solmat.2019.110353
    Journal articles | 2020
    Raj V; Rougieux F; Fu L; Tan HH; Jagadish C, 2020, 'Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts', IEEE Journal of Photovoltaics, vol. 10, pp. 1657 - 1666, http://dx.doi.org/10.1109/JPHOTOV.2019.2961615
    Journal articles | 2020
    Rougieux FE; Sun C; Juhl M, 2020, 'Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results', Solar Energy Materials and Solar Cells, vol. 210, http://dx.doi.org/10.1016/j.solmat.2020.110481
    Journal articles | 2019
    Rougieux FE; Kwapil W; Heinz F; Siriwardhana M; Schubert MC, 2019, 'Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption', Scientific Reports, vol. 9, http://dx.doi.org/10.1038/s41598-019-49804-8
    Journal articles | 2019
    Sun C; Chen D; Rougieux F; basnet R; Hallam B; macdonald D, 2019, 'Kinetics and dynamics of the regeneration of boron-oxygen defects in compensated n-type silicon', Solar Energy Materials and Solar Cells, http://dx.doi.org/10.1016/j.solmat.2019.03.016
    Journal articles | 2018
    Basnet R; Rougieux FE; Sun C; Phang SP; Samundsett C; Einhaus R; Degoulange J; Macdonald D, 2018, 'Methods to improve bulk lifetime in n-type czochralski-grown upgraded metallurgical-grade silicon wafers', IEEE Journal of Photovoltaics, vol. 8, pp. 990 - 996, http://dx.doi.org/10.1109/JPHOTOV.2018.2834944
    Journal articles | 2018
    Basnet R; Sun C; Wu H; Nguyen HT; Rougieux FE; Macdonald D, 2018, 'Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman', Journal of Applied Physics, vol. 124, http://dx.doi.org/10.1063/1.5057724
    Journal articles | 2018
    Raj V; Dos Santos TS; Rougieux F; Vora K; Lysevych M; Fu L; Mokkapati S; Tan HH; Jagadish C, 2018, 'Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer', Journal of Physics D: Applied Physics, vol. 51, http://dx.doi.org/10.1088/1361-6463/aad7e3
    Journal articles | 2018
    Rougieux FE; Sun C; Macdonald D, 2018, 'Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review', Solar Energy Materials and Solar Cells, vol. 187, pp. 263 - 272, http://dx.doi.org/10.1016/j.solmat.2018.07.029
    Journal articles | 2017
    Rougieux FE; Nguyen HT; Macdonald DH; Mitchell B; Falster R, 2017, 'Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon', IEEE Journal of Photovoltaics, vol. 7, pp. 735 - 740, http://dx.doi.org/10.1109/JPHOTOV.2017.2678840
    Journal articles | 2017
    Shen D; Sun C; Zheng P; Macdonald D; Rougieux F, 2017, 'Carrier induced degradation in compensated n-type silicon solar cells: Impact of light-intensity, forward bias voltage, and temperature on the reaction kinetics', Japanese Journal of Applied Physics, vol. 56, http://dx.doi.org/10.7567/JJAP.56.08MB23
    Journal articles | 2017
    Sun C; Nguyen HT; Rougieux FE; Macdonald D, 2017, 'Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging', Journal of Crystal Growth, vol. 460, pp. 98 - 104, http://dx.doi.org/10.1016/j.jcrysgro.2016.12.084
    Journal articles | 2017
    Sun C; Nguyen HT; Sio HC; Rougieux FE; Macdonald D, 2017, 'Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence', IEEE Journal of Photovoltaics, vol. 7, pp. 988 - 995, http://dx.doi.org/10.1109/JPHOTOV.2017.2705420
    Journal articles | 2017
    Zheng P; Rougieux FE; Zhang X; Degoulange J; Einhaus R; Rivat P; MacDonald DH, 2017, '21.1% UMG Silicon Solar Cells', IEEE Journal of Photovoltaics, vol. 7, pp. 58 - 61, http://dx.doi.org/10.1109/JPHOTOV.2016.2616192
    Journal articles | 2016
    Grant NE; Markevich VP; Mullins J; Peaker AR; Rougieux F; Macdonald D, 2016, 'Thermal activation and deactivation of grown-in defects limiting the lifetime of float-zone silicon', Physica Status Solidi - Rapid Research Letters, vol. 10, pp. 443 - 447, http://dx.doi.org/10.1002/pssr.201600080
    Journal articles | 2016
    Grant NE; Markevich VP; Mullins J; Peaker AR; Rougieux F; Macdonald D; Murphy JD, 2016, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', Physica Status Solidi (A) Applications and Materials Science, vol. 213, pp. 2844 - 2849, http://dx.doi.org/10.1002/pssa.201600360
    Journal articles | 2016
    Nguyen HT; Rougieux FE; Yan D; Wan Y; Mokkapati S; De Nicolas SM; Seif JP; De Wolf S; MacDonald D, 2016, 'Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy', Solar Energy Materials and Solar Cells, vol. 145, pp. 403 - 411, http://dx.doi.org/10.1016/j.solmat.2015.11.006
    Journal articles | 2016
    Rougieux F; Samundsett C; Fong KC; Fell A; Zheng P; MacDonald D; Degoulange J; Einhaus R; Forster M, 2016, 'High efficiency UMG silicon solar cells: Impact of compensation on cell parameters', Progress in Photovoltaics: Research and Applications, vol. 24, pp. 725 - 734, http://dx.doi.org/10.1002/pip.2729
    Journal articles | 2016
    Sun C; Rougieux FE; Degoulange J; Einhaus R; Macdonald D, 2016, 'Reassessment of the recombination properties of aluminium–oxygen complexes in n- and p-type Czochralski-grown silicon', Physica Status Solidi (B) Basic Research, vol. 253, pp. 2079 - 2084, http://dx.doi.org/10.1002/pssb.201600363
    Journal articles | 2016
    Zheng P; Rougieux FE; Samundsett C; Yang X; Wan Y; Degoulange J; Einhaus R; Rivat P; Macdonald D, 2016, 'Upgraded metallurgical-grade silicon solar cells with efficiency above 20%', Applied Physics Letters, vol. 108, http://dx.doi.org/10.1063/1.4944788
    Journal articles | 2015
    Grant NE; Rougieux FE; MacDonald D; Bullock J; Wan Y, 2015, 'Grown-in defects limiting the bulk lifetime of p -type float-zone silicon wafers', Journal of Applied Physics, vol. 117, http://dx.doi.org/10.1063/1.4907804
    Journal articles | 2015
    Nguyen HT; Rougieux FE; Baker-Finch SC; MacDonald D, 2015, 'Impact of carrier profile and rear-side reflection on photoluminescence spectra in planar crystalline silicon wafers at different temperatures', IEEE Journal of Photovoltaics, vol. 5, pp. 77 - 81, http://dx.doi.org/10.1109/JPHOTOV.2014.2359737
    Journal articles | 2015
    Nguyen HT; Rougieux FE; Wang F; Tan H; Macdonald D, 2015, 'Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon', IEEE Journal of Photovoltaics, vol. 5, pp. 799 - 804, http://dx.doi.org/10.1109/JPHOTOV.2015.2407158
    Journal articles | 2015
    Rougieux FE; Grant NE; Barugkin C; MacDonald D; Murphy JD, 2015, 'Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon', IEEE Journal of Photovoltaics, vol. 5, pp. 495 - 498, http://dx.doi.org/10.1109/JPHOTOV.2014.2367912
    Journal articles | 2015
    Sun C; Liu AY; Phang SP; Rougieux FE; MacDonald D, 2015, 'Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon', Journal of Applied Physics, vol. 118, http://dx.doi.org/10.1063/1.4929757
    Journal articles | 2015
    Sun C; Rougieux FE; Macdonald D, 2015, 'A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon', Journal of Applied Physics, vol. 117, http://dx.doi.org/10.1063/1.4906465
    Journal articles | 2015
    Zheng P; Rougieux FE; Grant NE; Macdonald D, 2015, 'Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon', IEEE Journal of Photovoltaics, vol. 5, pp. 183 - 188, http://dx.doi.org/10.1109/JPHOTOV.2014.2366687
    Journal articles | 2014
    Forster M; Wagner P; Degoulange J; Einhaus R; Galbiati G; Rougieux FE; Cuevas A; Fourmond E, 2014, 'Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells', Solar Energy Materials and Solar Cells, vol. 120, pp. 390 - 395, http://dx.doi.org/10.1016/j.solmat.2013.06.014
    Journal articles | 2014
    Hameiri Z; Rougieux F; Sinton R; Trupke T, 2014, 'Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements', Applied Physics Letters, vol. 104, pp. 073506, http://dx.doi.org/10.1063/1.4865804
    Journal articles | 2014
    Nguyen HT; Rougieux FE; Mitchell B; Macdonald D, 2014, 'Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence', Journal of Applied Physics, vol. 115, http://dx.doi.org/10.1063/1.4862912
    Journal articles | 2014
    Rougieux FE; MacDonald D, 2014, 'Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density', Applied Physics Letters, vol. 104, http://dx.doi.org/10.1063/1.4870002
    Journal articles | 2014
    Sun C; Rougieux FE; Macdonald D, 2014, 'Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon', Journal of Applied Physics, vol. 115, http://dx.doi.org/10.1063/1.4881497
    Journal articles | 2014
    Zheng P; Rougieux FE; MacDonald D; Cuevas A, 2014, 'Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level', IEEE Journal of Photovoltaics, vol. 4, pp. 560 - 565, http://dx.doi.org/10.1109/JPHOTOV.2013.2294755
    Journal articles | 2013
    Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2013, 'Incomplete Ionization and Carrier Mobility in Compensated $p$-Type and $n$-Type Silicon', 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, pp. 1 - 6
    Journal articles | 2013
    Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2013, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', IEEE Journal of Photovoltaics, vol. 3, pp. 108 - 113, http://dx.doi.org/10.1109/JPHOTOV.2012.2210032
    Journal articles | 2013
    Lim SY; Rougieux FE; Macdonald D, 2013, 'Boron-oxygen defect imaging in p-type Czochralski silicon', Applied Physics Letters, vol. 103, http://dx.doi.org/10.1063/1.4819096
    Journal articles | 2013
    Rougieux FE; Grant NE; Macdonald D, 2013, 'Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers', Physica Status Solidi - Rapid Research Letters, vol. 7, pp. 616 - 618, http://dx.doi.org/10.1002/pssr.201308053
    Journal articles | 2012
    Forster M; Cuevas A; Fourmond E; Rougieux FE; Lemiti M, 2012, 'Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon', Journal of Applied Physics, vol. 111, http://dx.doi.org/10.1063/1.3686151
    Journal articles | 2012
    Forster M; Fourmond E; Rougieux FE; Cuevas A; Gotoh R; Fujiwara K; Uda S; Lemiti M, 2012, 'Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron', Applied Physics Letters, vol. 100, http://dx.doi.org/10.1063/1.3680205
    Journal articles | 2012
    MacDonald D; Phang SP; Rougieux FE; Lim SY; Paterson D; Howard DL; De Jonge MD; Ryan CG, 2012, 'Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering', Semiconductor Science and Technology, vol. 27, http://dx.doi.org/10.1088/0268-1242/27/12/125016
    Journal articles | 2012
    Rougieux FE; Zheng P; Thiboust M; Tan J; Grant NE; MacDonald DH; Cuevas A, 2012, 'A contactless method for determining the carrier mobility sum in silicon wafers', IEEE Journal of Photovoltaics, vol. 2, pp. 41 - 46, http://dx.doi.org/10.1109/JPHOTOV.2011.2175705
    Journal articles | 2011
    Rougieux FE; Forster M; MacDonald D; Cuevas A; Lim B; Schmidt J, 2011, 'Recombination activity and impact of the boron-oxygen-related defect in compensated N-type silicon', IEEE Journal of Photovoltaics, vol. 1, pp. 54 - 58, http://dx.doi.org/10.1109/JPHOTOV.2011.2165698
    Journal articles | 2011
    Rougieux FE; Lim B; Schmidt J; Forster M; MacDonald D; Cuevas A, 2011, 'Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon', Journal of Applied Physics, vol. 110, http://dx.doi.org/10.1063/1.3633492
    Journal articles | 2011
    Tan J; MacDonald D; Rougieux F; Cuevas A, 2011, 'Accurate measurement of the formation rate of iron-boron pairs in silicon', Semiconductor Science and Technology, vol. 26, http://dx.doi.org/10.1088/0268-1242/26/5/055019
    Journal articles | 2010
    MacDonald D; Rougieux F; Mansoulie Y; Tan J; Paterson D; Howard DL; De Jonge MD; Ryan CG, 2010, 'Scanning X-ray fluorescence microspectroscopy of metallic impurities in solar-grade silicon', Physica Status Solidi (A) Applications and Materials Science, vol. 207, pp. 1807 - 1810, http://dx.doi.org/10.1002/pssa.201026137
    Journal articles | 2010
    Rougieux FE; MacDonald D; Cuevas A; Ruffell S; Schmidt J; Lim B; Knights AP, 2010, 'Electron and hole mobility reduction and Hall factor in phosphorus-compensated p -type silicon', Journal of Applied Physics, vol. 108, http://dx.doi.org/10.1063/1.3456076
    Journal articles | 2010
    Rougieux FE; MacDonald D; McIntosh KR; Cuevas A, 2010, 'Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon', Semiconductor Science and Technology, vol. 25, http://dx.doi.org/10.1088/0268-1242/25/5/055009
    Journal articles | 2009
    MacDonald D; Rougieux F; Cuevas A; Lim B; Schmidt J; Di Sabatino M; Geerligs LJ, 2009, 'Light-induced boron-oxygen defect generation in compensated p -type Czochralski silicon', Journal of Applied Physics, vol. 105, http://dx.doi.org/10.1063/1.3121208
  • Conference Papers | 2022
    Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Deep Level Transient Spectroscopy Study of Float-zone Silicon Degradation under Light and Elevated Temperature', in AIP Conference Proceedings, AIP Publishing, presented at SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics, http://dx.doi.org/10.1063/5.0089221
    Conference Papers | 2021
    Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2021, 'Electronic Properties of the Boron-oxygen Defect Precursor in Silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, IEEE, pp. 269 - 271, presented at 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 20 June 2021 - 25 June 2021, http://dx.doi.org/10.1109/PVSC43889.2021.9519027
    Conference Papers | 2020
    Jafari S; Zhu Y; Rougieux F; De Guzman JA; Markevich V; Peaker A; Hameiri Z, 2020, 'Boron-oxygen-related traps in Czochralski grown silicon', Online, presented at Asia Pacific Solar Research Conference, Online, 30 November 2020
    Conference Papers | 2020
    Jafari S; Zhu Y; Rougieux F; De Guzman JAT; Markevich VP; Peaker AR; Hameiri Z, 2020, 'Boron-oxygen related light-induced degradation of Si solar cells: Transformation between minority carrier trapping and recombination active centers', Virtual, presented at 47th IEEE Photovoltaics Specialists Conference, Virtual, 15 June 2020 - 21 August 2020
    Conference Papers | 2020
    Rougieux F; Sun C; Juhl M, 2020, 'The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2522 - 2524, http://dx.doi.org/10.1109/PVSC45281.2020.9300431
    Conference Papers | 2020
    Siriwardhana M; Rougieux FE; MacDonald D, 2020, 'Defect luminescence from thermal donors in silicon: Impact of dopant type and thermal donor concentration', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2652 - 2654, http://dx.doi.org/10.1109/PVSC45281.2020.9300685
    Conference Posters | 2019
    Chen D; Hamer P; Ciesla A; Chan C; Chen R; Rougieux F; Liu S; Kim M; Samadi A; Wright B; Vargas C; Zhang X; Hameiri Z; Hao J; Wenham S; Abbott M; Hallam B, 2019, 'Hydrogen-Induced Degradation: An explanation of Light-and Elevated Temperature-Induced Degradation Mechanisms in n-and p-type Silicon', Leuven, Belgium, presented at 9thInternational Conference on Crystalline Silicon Photovoltaics 2019, Leuven, Belgium, 08 April 2019
    Conference Presentations | 2019
    Chen D; Hamer P; Kim M; Mullins J; Sen C; Khan M; Oshima T; Abe H; Liu S; Ciesla A; Chan C; Chen R; Rougieux F; Zhou Z; Wright B; Varshney U; Vicari Stefani B; Soeriyadi A; Vargas Castrillon C; Samadi A; Hameiri Z; zhang X; Jin H; Qi W; Abbott M; Chong C; Peaker A; Hallam B, 2019, 'Will LeTID remain a commercial problem? Evaluating the solutions and a possible root cause. (LeTID仍是一个商业难题吗?根源分析和问题解决)', presented at 18th Issue PV WE CLASS-Crystalline Silicon Advanced Technology and Materials Forum, Wuxi, China, 24 April 2019 - 24 May 2019
    Conference Presentations | 2019
    Ciesla A; Chen R; Rougieux F; Hallam B; Chan C; Chen D; Chong C; Abbott M; Wenham S, 2019, 'Hydrogen Charge States & Recombination Activity in PV Silicon', presented at 18th Conference - Gettering and Defect Engineering in Semiconductor Technology - GADEST, Zeuthen, Germany, 22 September 2019 - 27 September 2019
    Conference Papers | 2019
    Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Canberra, presented at Asia-Pacific Solar Research Conference, Canberra, 03 December 2019
    Conference Papers | 2019
    Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 09 September 2019 - 13 September 2019
    Conference Posters | 2019
    Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 09 September 2019 - 13 September 2019
    Conference Papers | 2019
    Zhu Y; Rougieux F; Grant N; Mullins J; Ann De Guzman J; Murphy J; Markevich V; Coletti G; Peaker A; Hameiri Z, 2019, 'New insights into the thermally activated defects in n-type float-zone silicon', Leuven, presented at 9th International Conference on Silicon Photovoltaics, Leuven, 08 April 2019 - 10 April 2019
    Conference Papers | 2018
    Basnet R; Weigand W; Yu ZJ; Sun C; Phang SP; Rougieux FE; Einhaus R; Degoulange J; Holman Z; Macdonald D, 2018, 'Impact of Tabula Rasa and Phosphorus Diffusion Gettering on 21% Heterojunction Solar Cells Based on n-Type Czochralski-Grown Upgrade Metallurgical-Grade Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 1687 - 1691, http://dx.doi.org/10.1109/PVSC.2018.8548218
    Conference Papers | 2018
    Juhl MK; Heinz FD; Coletti G; MacDonald D; Rougieux FE; Schindle F; Niewelt T; Schubert MC, 2018, 'An Open Source Based Repository for Defects in Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 328 - 332, http://dx.doi.org/10.1109/PVSC.2018.8547621
    Conference Papers | 2018
    Juhl MK; Heinz FD; Coletti G; Macdonald D; Rougieux FE; Schindle F; Niewelt T; Schubert MC, 2018, 'An Open Source Based Repository For Defects in Silicon', in 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), IEEE, HI, Waikoloa, pp. 0328 - 0332, presented at 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC, HI, Waikoloa, 10 June 2018 - 15 June 2018, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000469200400077&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
    Conference Papers | 2018
    Rougieux FE; Sun C; Zhu Y; MacDonald DH, 2018, 'Accurate defect recombination parameters: What are the limitations of current analyses?', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 2520 - 2523, http://dx.doi.org/10.1109/PVSC.2018.8547585
    Conference Papers | 2018
    Siriwardhana M; Macdonald D; Heinz FD; Rougieux FE, 2018, 'Slow minority carrier trapping and de-trapping in Czochralski silicon: Influence of thermal donors and the doping density', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3312 - 3314, http://dx.doi.org/10.1109/PVSC.2018.8547946
    Conference Papers | 2017
    Rougieux F; Nguyen H; Maconald D; Mitchell B; Falster R, 2017, 'Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime', in Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime, WIP-Renewable Energies, Munich, Germany, Amsterdam, presented at 35th European Photovoltaic Solar Energy Conference, Amsterdam, 24 September 2017 - 28 September 2017
    Conference Papers | 2016
    Grant NE; Rougieux FE; Macdonald D, 2016, 'Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers', in Solid State Phenomena, pp. 120 - 125, http://dx.doi.org/10.4028/www.scientific.net/SSP.242.120
    Conference Papers | 2016
    Shen D; Sun C; Zheng P; Macdonald D; Rougieux F, 2016, 'Carrier induced degradation in compensated n-type silicon solar cells', in Carrier induced degradation in compensated n-type silicon solar cells, 26th Photovoltaic Science and Engineering Conference, Singapore, presented at 26th Photovoltaic Science and Engineering Conference, Singapore, 24 October 2016 - 28 October 2016
    Conference Papers | 2016
    Sun C; Nguyen HT; Rougieux FE; Macdonald D, 2016, 'Characterization of Cu and Ni Precipitates in n- and p-type Czochralski-grown Silicon by Photoluminescence', in Energy Procedia, pp. 880 - 885, http://dx.doi.org/10.1016/j.egypro.2016.07.097
    Conference Papers | 2016
    Zheng P; Rougieux FE; Samundsett C; Yang X; Wan Y; Degoulange J; Einhaus R; Rivat P; MacDonald D, 2016, 'Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell', in Energy Procedia, pp. 434 - 442, http://dx.doi.org/10.1016/j.egypro.2016.07.124
    Conference Papers | 2015
    Macdonald D; Liu A; Nguyen HT; Lim SY; Rougieux F, 2015, 'Physical Modelling of Luminescence Spectra from Crystalline Silicon', in Physical Modelling of Luminescence Spectra from Crystalline Silicon, WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 31st European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 14 September 2015 - 18 September 2015
    Conference Papers | 2015
    Nguyen HT; Rougieux FE; Wang F; Macdonald D, 2015, 'Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon', in Energy Procedia, pp. 619 - 625, http://dx.doi.org/10.1016/j.egypro.2015.07.089
    Conference Papers | 2015
    Rougieux FE; Grant NE; Macdonald D; Murphy JD, 2015, 'Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?', in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, http://dx.doi.org/10.1109/PVSC.2015.7355687
    Conference Papers | 2015
    Sun C; Liu A; Rougieux FE; MacDonald D, 2015, 'Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon', in Energy Procedia, pp. 646 - 650, http://dx.doi.org/10.1016/j.egypro.2015.07.092
    Conference Papers | 2014
    Grant N; Markevich VP; Mullins J; Peaker A; Rougieux FIACRE; Macdonald D; Murphy JD, 2014, 'Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon', in Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon, European Materials Research Society Spring Meeting, Lille, presented at European Materials Research Society Spring Meeting, Lille, 26 May 2014 - 28 May 2014
    Conference Papers | 2014
    Grant NE; Rougieux FE; Macdonald D; Bullock J; Wan Y, 2014, 'Recombination active defects limiting the lifetime of float-zone silicon', in Recombination active defects limiting the lifetime of float-zone silicon, 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, presented at 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, 27 July 2014 - 30 July 2014
    Conference Papers | 2014
    Macdonald D; Zheng P; Rougieux F, 2014, 'Limiting defects in high-lifetime n-type silicon wafers', in Limiting defects in high-lifetime n-type silicon wafers, 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, presented at 24th Workshop on Crystalline Silicon Solar Cells and Modules Materials and Processes, Breckenridge, Colorado, Breckenridge, 27 July 2014 - 30 July 2014
    Conference Papers | 2014
    Nguyen HT; Rougieux FE; Baker-Finch S; Macdonald D, 2014, 'Temperature Dependence of Band-Band Absorption and Radiative Re-combination in Crystalline Silicon from Spectral Photoluminescence', in Temperature Dependence of Band-Band Absorption and Radiative Re-combination in Crystalline Silicon from Spectral Photoluminescence, 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, Denver, presented at 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, Denver, 08 June 2014 - 13 June 2014
    Conference Presentations | 2014
    Rougieux F; Grant N; Macdonald D; Murphy J, 2014, 'Nature of some recombination active defect in CZ and FZ n-type silicon for high efficiency solar cells', presented at European Materials Research Society Spring Meeting, Lille, France,, 26 April 2014 - 30 April 2014
    Conference Papers | 2014
    Rougieux F; Samundsett C; Zheng P; Fong K; Macdonald D, 2014, 'Towards high efficiency UMG silicon solar cells', in Towards high efficiency UMG silicon solar cells, 24th Photovoltaic Science and Engineering Conference, Kyoto, Japan,, Kyoto, presented at 24th Photovoltaic Science and Engineering Conference, Kyoto, Japan,, Kyoto, 23 October 2014 - 27 October 2014
    Conference Papers | 2014
    Rougieux FE; Grant NE; Macdonald D, 2014, 'Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers', in Energy Procedia, pp. 81 - 84, http://dx.doi.org/10.1016/j.egypro.2014.12.346
    Conference Papers | 2014
    Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level: Extension to p-type Silicon', in 2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), IEEE, CO, Denver, pp. 125 - 130, presented at 40th IEEE Photovoltaic Specialists Conference (PVSC), CO, Denver, 08 June 2014 - 13 June 2014, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000366638900029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
    Conference Papers | 2014
    Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon', in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, pp. 129 - 134, http://dx.doi.org/10.1109/PVSC.2014.6925391
    Conference Papers | 2013
    Grant NE; McIntosh KR; Tan J; Rougieux FE; Wan Y; Barugkin C, 2013, 'Light Enhanced Hydrofluoric Acid Passivation for Evaluating Silicon Bulk Lifetimes', in Light Enhanced Hydrofluoric Acid Passivation for Evaluating Silicon Bulk Lifetimes, 28th European Photovoltaic Solar Energy Conference, Paris, France, Paris, presented at 28th European Photovoltaic Solar Energy Conference, Paris, France, Paris, 30 September 2013 - 04 October 2013
    Conference Papers | 2013
    Lim S; Rougieux FE; Macdonald D, 2013, 'Boron-oxygen defect imaging in p-type Czochralskisilicon', in Boron-oxygen defect imaging in p-type Czochralskisilicon, 23rdWorkshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, Breckenridge, presented at 23rdWorkshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, Breckenridge, Colorado, Breckenridge, 28 July 2013 - 31 July 2013
    Conference Presentations | 2013
    Rougieux F; Grant NE; Macdonald D, 2013, 'Multi-millisecond n-type Si wafers for high efficiency silicon solar cells: spatial homogeneity and defect engineering', presented at 3rdnPVWorkshop,Chambery, France,, 22 April 2013 - 23 April 2013
    Conference Papers | 2012
    Cuevas A; Forster M; Rougieux F; Macdonald D, 2012, 'Compensation engineering for silicon solar cells', in Energy Procedia, pp. 67 - 77, http://dx.doi.org/10.1016/j.egypro.2012.02.008
    Conference Papers | 2012
    Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2012, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', in 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, IEEE, presented at 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 03 June 2012 - 08 June 2012, http://dx.doi.org/10.1109/pvsc-vol2.2013.6656739
    Conference Papers | 2012
    Rougieux F; Forster M; Macdonald D; Cuevas A, 2012, 'Impact of minority-impurity scattering on the carrier mobility in compensated silicon', in Impact of minority-impurity scattering on the carrier mobility in compensated silicon, 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, presented at 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, 05 November 2012 - 09 November 2012
    Conference Papers | 2012
    Rougieux F; Phang SP; Shalav A; Lim B; Macdonald D, 2012, 'Acceptor-related metastable defects in compensated n-type silicon', in Acceptor-related metastable defects in compensated n-type silicon, 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, presented at 22nd Photovoltaic Science and Engineering Conference, Hangzhou, China, Hangzhou, 05 November 2012 - 09 November 2012
    Conference Papers | 2011
    Rougieux F, 2011, 'Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon', in Recombination activity and impact of the boron-oxygen defect in compensated n-type silicon, 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, presented at 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, 19 June 2011 - 24 June 2011
    Conference Papers | 2011
    Rougieux F; Thiboust M; Zheng P; Tan J; Grant N; Macdonald D; Cuevas A, 2011, 'A contactless method for determining the carrier mobility sum in silicon wafers for solar cells', in A contactless method for determining the carrier mobility sum in silicon wafers for solar cells, 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, presented at 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, Seattle, 19 June 2011 - 24 June 2011
    Conference Papers | 2011
    Rougieux FE; MacDonald D; Cuevas A, 2011, 'Transport properties of p-type compensated silicon at room temperature', in Progress in Photovoltaics: Research and Applications, pp. 787 - 793, http://dx.doi.org/10.1002/pip.1036
    Conference Papers | 2011
    Rougieux FE; Macdonald D; Cuevas A; Lim B; Schmidt J, 2011, 'Formation kinetics and extent of the boron oxygen defect in compensated n-type silicon', in 2011 37th IEEE Photovoltaic Specialists Conference, IEEE, presented at 2011 37th IEEE Photovoltaic Specialists Conference (PVSC 2011), 19 June 2011 - 24 June 2011, http://dx.doi.org/10.1109/pvsc.2011.6186682
    Conference Papers | 2011
    Rougieux FE; Thiboust M; Grant N; Tan J; Macdonald D; Cuevas A, 2011, 'Contactless determination of the injection dependent carrier mobility sum in silicon', in 2011 37th IEEE Photovoltaic Specialists Conference, IEEE, presented at 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 19 June 2011 - 24 June 2011, http://dx.doi.org/10.1109/pvsc.2011.6186558
    Conference Papers | 2010
    Lim B; Liu A; Rougieux F; Macdonald D; Bothe K; Schmidt J, 2010, 'Boron-Oxygen-Related Recombination Centers in Compensated Silicon', in Boron-Oxygen-Related Recombination Centers in Compensated Silicon, WIP-Renewable Energies, Munich, Germany, Valencia, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valencia, 06 September 2010 - 10 September 2010
    Conference Papers | 2010
    Lim B; Rougieux F; MacDonald D; Bothe K; Schmidt J, 2010, 'Generation and annihilation of boron-oxygen-related recombination centers in compensated p - And n -type silicon', in Journal of Applied Physics, http://dx.doi.org/10.1063/1.3511741
    Conference Papers | 2010
    Rougieux F; Macdonald D; Cuevas A; Ruffel S; Schmidt J; Lim B, 2010, 'Electron and hole mobility reduction and Hall Factor in compensated p-type silicon', in Electron and hole mobility reduction and Hall Factor in compensated p-type silicon, WIP-Renewable Energies, Munich, Germany, Valenci, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valenci, 06 September 2010 - 10 September 2010
    Conference Papers | 2010
    Tan J; Macdonald D; Rougieux F; Cuevas A, 2010, 'revised equation for the formation rate of iron-boron pairs in silicon', in revised equation for the formation rate of iron-boron pairs in silicon, WIP-Renewable Energies, Munich, Germany, Valencia, presented at 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Valencia, 06 September 2010 - 10 September 2010
    Conference Papers | 2009
    Macdonald D; Rougieux F; Cuevas A; Lim B; Schmidt J; Di Sabatino M; Geerligs LJ, 2009, 'Boron-oxygen defects in compensated p-type Czochralski silicon', in Boron-oxygen defects in compensated p-type Czochralski silicon, WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 21 September 2009 - 25 September 2009
    Conference Papers | 2009
    Rougieux F; Macdonald D; McIntosh K; Cuevas A, 2009, 'Oxidation-induced inversion layer in compensated p-type silicon', in Oxidation-induced inversion layer in compensated p-type silicon, WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 21 September 2009 - 25 September 2009

Publications and grants:

Take a look at my publication and citation record at Google Scholar or ORCIDID.

I have a been awarded more than 10 grants as first (two personal fellowships) and/or partner investigators in the past 5 years.

  1. Semiconductor materials: Solar grade feedstocks - Fundamental semiconductor properties - Defect Engineering - Optoelectronic device
  2. Solar cells: Characterization - Advanced solar cells processes - Low cost solar cells - High efficiency n-type solar cells - Hybrid Solar Cells
  3. Solar panels: Potential Induced Degradation - Modelling Statistical Degradation - Mechanical Failure - High Yield Modules
  4. Systems: System Design - System Flexibility - Distributed Generation - System Underperformance Diagnosis

Research projects:

We have a range of exciting PhD projects, Masters projects and undergraduate research projects available. Please contact me directly regarding PhD supervision, PhD scholarships and potential PhD projects. There are scholarship opportunities for international and domestic students. Example of PhD projects include:

  • Engineering the next generation of high efficiency solar cell materials
  • Mitigating potential induced degradation in novel module structures
  • Statistical modelling of degradation and yield of modules
  • Advanced diagnosis of degradation in PV systems

Currently supervised PhD students:

  • Hanrong Huang
  • Ryan Hall
  • Abhinav Sharma
  • Yalun Cai

Previously supervised PhD students:

  • Zhuangyi Zhou
  • Manjula Siriwardhana
  • Tan Xingru
  • Vidur Raj
  • Chang Sun
  • Hieu Nguyen
  • Peting Zheng