Dr Ludwik Kranz
Research Staff Level C

Dr Ludwik Kranz

Science
School of Physics

Dr Kranz is a Research Fellow specialising in nanotechnology, quantum technologies and atomic-scale engineering. After obtaining his Bachelor and Master Degrees at top European institutions, he completed a PhD at the UNSW. Ludwik is currently working jointly with the team at Silicon Quantum Computing and at ARC Centre for Quantum Computation and Communication Technology. His current work is focused on the development and optimisation of multi-qubit devices based on atomically precise placement of dopants in silicon.

  • Journal articles | 2023
    Hsueh YL; Kranz L; Keith D; Monir S; Chung Y; Gorman SK; Rahman R; Simmons MY, 2023, 'Hyperfine-mediated spin relaxation in donor-atom qubits in silicon', Physical Review Research, 5, http://dx.doi.org/10.1103/PhysRevResearch.5.023043
    Journal articles | 2023
    2023, 'High-Fidelity CNOT Gate for Donor Electron Spin Qubits in Silicon', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.024068
    Journal articles | 2023
    2023, 'The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors', Advanced Materials, 35, pp. e2201625, http://dx.doi.org/10.1002/adma.202201625
    Journal articles | 2023
    2023, 'The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)', Advanced Materials, 35, pp. 2370039 - 2370039, http://dx.doi.org/10.1002/adma.202370039
    Journal articles | 2022
    2022, 'Erratum: Benchmarking high fidelity single-shot readout of semiconductor qubits (New J. Phys. (2019) 21 (063011) DOI: 10.1088/1367-2630/ab242c/meta)', New Journal of Physics, 24, http://dx.doi.org/10.1088/1367-2630/ac7479
    Journal articles | 2022
    2022, 'Impact of charge noise on electron exchange interactions in semiconductors', npj Quantum Information, 8, http://dx.doi.org/10.1038/s41534-022-00523-5
    Journal articles | 2022
    2022, 'Ramped measurement technique for robust high-fidelity spin qubit readout', Science Advances, 8, pp. eabq0455, http://dx.doi.org/10.1126/sciadv.abq0455
    Journal articles | 2021
    Fricke L; Hile SJ; Kranz L; Chung Y; He Y; Pakkiam P; House MG; Keizer JG; Simmons MY, 2021, 'Coherent control of a donor-molecule electron spin qubit in silicon', Nature Communications, 12, http://dx.doi.org/10.1038/s41467-021-23662-3
    Journal articles | 2020
    Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202003361
    Journal articles | 2020
    Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Quantum Computing: Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon (Adv. Mater. 40/2020)', Advanced Materials, 32, pp. 2070298 - 2070298, http://dx.doi.org/10.1002/adma.202070298
    Journal articles | 2019
    He Y; Gorman SK; Keith D; Kranz L; Keizer JG; Simmons MY, 2019, 'A two-qubit gate between phosphorus donor electrons in silicon', Nature, 571, pp. 371 - 375, http://dx.doi.org/10.1038/s41586-019-1381-2
    Journal articles | 2019
    Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2019, 'Benchmarking high fidelity single-shot readout of semiconductor qubits', New Journal of Physics, 21, http://dx.doi.org/10.1088/1367-2630/ab242c
  • Preprints | 2018
    2018, Benchmarking high fidelity single-shot readout of semiconductor qubits, , http://dx.doi.org/10.48550/arxiv.1811.03630