
Professor Sven Rogge is the Dean of the Faculty of Science at the University of New South Wales, Sydney (UNSW). Sven’s research interest is in condensed matter physics, in particular quantum electronics, at the School of Physics. Sven works on quantum computation in silicon in the ARC Centre for Quantum Computation and Communication Technology. In a team of enthusiastic researchers, they work on gaining atomistic insight into the interactions of quantum objects, like atoms and qubits, with their environment. This allows the team to manipulate quantum information and minimise decoherence. Before joining UNSW in 2011 Sven worked at the Kavli Institute for Quantum Nano Science at Delft University and Stanford University.
The goal of my research program is to understand the physics of qubit coupling with the environment to understand decoherence pathways and to control. The control over the electron wavefunction requires interface which lead to the loss of bulk properties of the qubit due to physical processes like the valley-orbit coupling, exchange, and many-body effects in coherent coupling. The atomistic understanding of the interaction between the environment and the qubit is essential for quantum computation since it allows the achievement of optimal coherence times and optimal robustness of the quantum gates. Optical addressing of electrons in Si is nontrivial but vastly beneficial due to the gained flexibility and unprecedented high resolution. We investigate efficient read-out and coupling schemes to open up new pathways into optical control.
We look for enthusiastic PhD and Honours candidates for research projects. Prestigious Scholarship are available which are typically valued at $36,000 per annum for up to three-and-a-half years. The successful scholarship applicant will be expected to enrol for a PhD degree and should have an honours degree (level 1 or 2A) or equivalent, in Physics, Applied Physics, Material Science or a related subject. International applicants with a Masters degree are strongly encouraged to apply. Interested candidates should contact me to discuss possible projects and the application procedure. International applicants are very welcome! Please email an application containing a complete resume including telephone numbers, email address, and contact details of three academic referees to me. You will get a confirmation within a few days. The scholarships will remain open until filled.
There are always projects in the main research areas which focus on low temperature scanning-tunnelling spectroscopy, atomistic transport, and the interaction of light and matter at the atomic scale. We have a team of 15 enthusiastic researchers ranging from undergraduates to postdoctoral fellows. My group combines different research strengths and is very international. UNSW offers a first class laboratory and intellectual environment for atomic-scale electronics research.
PHY3118: Quantum Physics of Solids and Devices
I am the President of the Australian Institute of Physics.
Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10
Mol J; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-15
Verduijn J; Tettamanzi G; Rogge S, 2013, 'Orbital Structure and Transport Characteristics of Single Donors', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-10
Mol JA; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Prati E; Shinada T (ed.), Single Atom Nanoelectronics, PAN STANFORD PUBLISHING PTE LTD, pp. 329 - 343, http://dx.doi.org/10.4032/9789814316699
, 2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15
Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2012, 'New tools for the direct characterisation of FinFETS', in CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications, pp. 361
Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034
Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034
Berkman IR; Lyasota A; De Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu BB; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2023, 'Observing Er3+ Sites in Si with an in Situ Single-Photon Detector', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.014037
Mikhail D; Voisin B; St Medar DD; Buchs G; Rogge S; Rachel S, 2022, 'Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.195408
Joch DJ; Slussarenko S; Wang Y; Pepper A; Xie S; Xu BB; Berkman IR; Rogge S; Pryde GJ, 2022, 'Certified random-number generation from quantum steering', Physical Review A, 106, http://dx.doi.org/10.1103/PhysRevA.106.L050401
Yang J; Wang J; Fan W; Zhang Y; Duan C; Hu G; De Boo GG; Johnson BC; McCallum JC; Rogge S; Yin C; Du J, 2022, 'Spectral Broadening of a Single Er3+ Ion in a Si Nanotransistor', Physical Review Applied, 18, http://dx.doi.org/10.1103/PhysRevApplied.18.034018
Yang J; Fan W; Zhang Y; Duan C; De Boo GG; Ahlefeldt RL; Longdell JJ; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, 'Zeeman and hyperfine interactions of a single Er 3+ 167 ion in Si', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.235306
Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', Materials for Quantum Technology, 2, pp. 025002 - 025002, http://dx.doi.org/10.1088/2633-4356/ac5d1d
Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006
Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007
Tankasala A; Voisin B; Kembrey Z; Salfi J; Hsueh YL; Osika EN; Rogge S; Rahman R, 2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.155158
Hu G; Ahlefeldt RL; De Boo GG; Lyasota A; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Single site optical spectroscopy of coupled Er3+ion pairs in silicon', Quantum Science and Technology, 7, http://dx.doi.org/10.1088/2058-9565/ac56c7
Hu G; De Boo GG; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Erratum: Time-Resolved Photoionization Detection of a Single Er3+Ion in Silicon (Nano Letters (2022) 22:1 (396-401) DOI: 10.1021/acs.nanolett.1c04072)', Nano Letters, 22, pp. 1456 - 1456, http://dx.doi.org/10.1021/acs.nanolett.2c00173
Hu G; De Boo GG; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Time-Resolved Photoionization Detection of a Single Er3+Ion in Silicon', Nano Letters, 22, pp. 396 - 401, http://dx.doi.org/10.1021/acs.nanolett.1c04072
Chong S; Rogge SMJ; Kim J, 2021, 'Tunable Electrical Conductivity of Flexible Metal-Organic Frameworks', CHEMISTRY OF MATERIALS, 34, pp. 254 - 265, http://dx.doi.org/10.1021/acs.chemmater.1c03236
Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2021, 'Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits', npj Quantum Information, 7, http://dx.doi.org/10.1038/s41534-021-00386-2
Voisin B; Salfi J; Rahman R; Rogge S, 2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, 46, pp. 616 - 622, http://dx.doi.org/10.1557/s43577-021-00136-x
Xu BB; De Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2021, 'Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators', Physical Review Applied, 15, http://dx.doi.org/10.1103/PhysRevApplied.15.044014
Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2021, 'Isotopic enrichment of silicon by high fluence 28Si- ion implantation', Physical Review Materials, 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.014601
Kobayashi T; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl HJ; Simmons MY; Rogge S, 2021, 'Engineering long spin coherence times of spin–orbit qubits in silicon', Nature Materials, 20, pp. 38 - 42, http://dx.doi.org/10.1038/s41563-020-0743-3
Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, 11, pp. 6124, http://dx.doi.org/10.1038/s41467-020-19835-1
De Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars MJ; Rogge S, 2020, 'High-resolution spectroscopy of individual erbium ions in strong magnetic fields', Physical Review B, 102, http://dx.doi.org/10.1103/PhysRevB.102.155309
Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, 'Scanned Single-Electron Probe inside a Silicon Electronic Device', ACS Nano, 14, pp. 9449 - 9455, http://dx.doi.org/10.1021/acsnano.0c00736
Rogge S, 2020, 'The role of science in the international response to COVID-19 and the imminent cuts to stem education', Australian Physics, 57, pp. 7
Everts JR; King GGG; Lambert NJ; Kocsis S; Rogge S; Longell JJ, 2020, 'Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare-earth ion spins', Physical Review B, 101, http://dx.doi.org/10.1103/PhysRevB.101.214414
Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2020, 'Certification of spin-based quantum simulators', Physical Review A, 101, http://dx.doi.org/10.1103/PhysRevA.101.052344
嵩 小; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2019, 'シリコン中のアクセプタ不純物スピン状態の制御による長いコヒーレンス時間の実現', , pp. 265 - 265, http://dx.doi.org/10.11316/jpsgaiyo.73.2.0_265
Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, 'Hole spin echo envelope modulations', Physical Review B, 100, http://dx.doi.org/10.1103/PhysRevB.100.125402
Zhang Q; Hu G; De Boo GG; Rančić M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2019, 'Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors', Nano Letters, 19, pp. 5025 - 5030, http://dx.doi.org/10.1021/acs.nanolett.9b01281
Zhang Y; Shi L; Hu D; Chen S; Xie S; Lu Y; Cao Y; Zhu Z; Jin L; Guan BO; Rogge S; Li X, 2019, 'Full-visible multifunctional aluminium metasurfaces by: In situ anisotropic thermoplasmonic laser printing', Nanoscale Horizons, 4, pp. 601 - 609, http://dx.doi.org/10.1039/c9nh00003h
van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, 4, pp. eaat9199, http://dx.doi.org/10.1126/sciadv.aat9199
Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.041032
嵩 小; van der Heijden J; Salfi J; House MG; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, 'Spin Echo Study of Boron in 28Si at Millikelvin Temperature', , pp. 1023 - 1023, http://dx.doi.org/10.11316/jpsgaiyo.72.2.0_1023
Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.031049
Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, 'Gigahertz Single-Electron Pumping Mediated by Parasitic States', Nano Letters, 18, pp. 4141 - 4147, http://dx.doi.org/10.1021/acs.nanolett.8b00874
Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2018, 'Entanglement control and magic angles for acceptor qubits in Si', Applied Physics Letters, 113, http://dx.doi.org/10.1063/1.5036521
Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, 97, http://dx.doi.org/10.1103/PhysRevB.97.195301
Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, 'Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon', Nanoscale, 9, pp. 17013 - 17019, http://dx.doi.org/10.1039/c7nr05081j
Fresch B; Bocquel J; Hiluf D; Rogge S; Levine RD; Remacle F, 2017, 'Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon', ChemPhysChem, 18, pp. 1790 - 1797, http://dx.doi.org/10.1002/cphc.201700222
Klymenko MV; Rogge S; Remacle F, 2017, 'Electronic states and valley-orbit coupling in linear and planar molecules formed by coupled P donors in silicon', Physical Review B, 95, http://dx.doi.org/10.1103/PhysRevB.95.205301
Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362
Van Der Heijden J; Tettamanzi GC; Rogge S, 2017, 'Dynamics of a single-atom electron pump', Scientific Reports, 7, http://dx.doi.org/10.1038/srep44371
Fresch B; Bocquel J; Rogge S; Levine RD; Remacle F, 2017, 'A Probabilistic Finite State Logic Machine Realized Experimentally on a Single Dopant Atom', Nano Letters, 17, pp. 1846 - 1852, http://dx.doi.org/10.1021/acs.nanolett.6b05149
Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies (vol 11, pg 2444, 2017)', ACS NANO, 11, pp. 3420 - 3420, http://dx.doi.org/10.1021/acsnano.6b08154
Agundez RR; Hill CD; Hollenberg LCL; Rogge S; Blaauboer M, 2017, 'Superadiabatic quantum state transfer in spin chains', Physical Review A, 95, http://dx.doi.org/10.1103/PhysRevA.95.012317
House MG; Bartlett I; Pakkiam P; Koch M; Peretz E; Van Der Heijden J; Kobayashi T; Rogge S; Simmons MY, 2016, 'High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation', Physical Review Applied, 6, http://dx.doi.org/10.1103/PhysRevApplied.6.044016
Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83
Salfi J; Mol JA; Culcer D; Rogge S, 2016, 'Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon', Physical Review Letters, 116, http://dx.doi.org/10.1103/PhysRevLett.116.246801
Salfi J; Tong M; Rogge S; Culcer D, 2016, 'Quantum computing with acceptor spins in silicon', Nanotechnology, 27, http://dx.doi.org/10.1088/0957-4484/27/24/244001
Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, 7, http://dx.doi.org/10.1038/ncomms11342
Kobayashi T; Van Der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, 'Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system', Applied Physics Letters, 108, http://dx.doi.org/10.1063/1.4945736
Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2016, 'Donor wave functions in Si gauged by STM images', Physical Review B, 93, http://dx.doi.org/10.1103/PhysRevB.93.045303
Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal', Physical Review A - Atomic, Molecular, and Optical Physics, 92, http://dx.doi.org/10.1103/PhysRevA.92.062313
House MG; Kobayashi T; Weber B; Hile SJ; Watson TF; Van Der Heijden J; Rogge S; Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, 6, http://dx.doi.org/10.1038/ncomms9848
Klymenko MV; Rogge S; Remacle F, 2015, 'Multivalley envelope function equations and effective potentials for phosphorus impurity in silicon', Physical Review B - Condensed Matter and Materials Physics, 92, http://dx.doi.org/10.1103/PhysRevB.92.195302
Hill CD; Peretz E; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY; Hollenberg LCL, 2015, 'Quantum Computing: A surface code quantum computer in silicon', Science Advances, 1, http://dx.doi.org/10.1126/sciadv.1500707
Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4929827
Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, 'A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4928589
Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, 91, http://dx.doi.org/10.1103/PhysRevB.91.245209
Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, 106, http://dx.doi.org/10.1063/1.4921640
Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154207
Schofield SR; Rogge S, 2015, 'Single dopants in semiconductors', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/150301
Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154203
Agundez RR; Salfi J; Rogge S; Blaauboer M, 2015, 'Local Kondo temperatures in atomic chains', Physical Review B - Condensed Matter and Materials Physics, 91, http://dx.doi.org/10.1103/PhysRevB.91.041117
Urdampilleta M; Chatterjee A; Lo CC; Kobayashi T; Mansir J; Barraud S; Betz AC; Rogge S; Gonzalez-Zalba MF; Morton JJL, 2015, 'Charge dynamics and spin blockade in a hybrid double quantum dot in silicon', Physical Review X, 5, http://dx.doi.org/10.1103/PhysRevX.5.031024
Rossi A; Tanttu T; Tan KY; Iisakka I; Zhao R; Chan KW; Tettamanzi GC; Rogge S; Dzurak AS; Möttönen M, 2014, 'An accurate single-electron pump based on a highly tunable silicon quantum dot', Nano Letters, 14, pp. 3405 - 3411, http://dx.doi.org/10.1021/nl500927q
Van Der Heijden J; Salfi J; Mol JA; Verduijn J; Tettamanzi GC; Hamilton AR; Collaert N; Rogge S, 2014, 'Probing the spin states of a single acceptor atom', Nano Letters, 14, pp. 1492 - 1496, http://dx.doi.org/10.1021/nl4047015
Verduijn J; Vinet M; Rogge S, 2014, 'Radio-frequency dispersive detection of donor atoms in a field-effect transistor', Applied Physics Letters, 104, pp. 102107-1 - 102107-4, http://dx.doi.org/10.1063/1.4868423
Tettamanzi GC; Wacquez R; Rogge S, 2014, 'Charge pumping through a single donor atom', New Journal of Physics, 16, http://dx.doi.org/10.1088/1367-2630/16/6/063036
Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941
Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2013, 'Silicon Quantum Electronics', Reviews of Modern Physics, 85, pp. 961 - 1019, http://dx.doi.org/10.1103/RevModPhys.85.961
Rogge S; Sellars MJ, 2013, 'Quantum computing: Atomic clocks in the solid state', Nature Nanotechnology, 8, pp. 544 - 545, http://dx.doi.org/10.1038/nnano.2013.152
Tettamanzi G, 2013, 'Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade (vol 107, 136602, 2011)', Physical Review Letters, 110, pp. 49901 - 049901, http://dx.doi.org/10.1103/PhysRevLett.110.049901
Simmons MY; Miwa JA; Rogge S; Mol J; Salfi J, 2013, 'Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants', Physical Review B, 87, pp. 245417, http://dx.doi.org/10.1103/PhysRevB.87.245417
Agundez RR; Verduijn J; Rogge S; Blaauboer M, 2013, 'Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system', Physical Review B, 87, pp. Article number235407, http://dx.doi.org/10.1103/PhysRevB.87.235407
Collini E; Levine RD; Remacle F; Rogge S; Willner I, 2013, 'Multi project: Multi-valued and parallel molecular logic', International Journal of Unconventional Computing, 8, pp. 307 - 312
Verduijn A; Agundez RR; Blaauboer M; Rogge S, 2013, 'Non-local coupling of two donor-bound electrons', New Journal of Physics, 15, http://dx.doi.org/10.1088/1367-2630/15/3/033020
Yin CM; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, 'Optical addressing of an individual erbium ion in silicon', Nature, 497, pp. 91 - 94, http://dx.doi.org/10.1038/nature12081
Simmons MY; Miwa JA; Mol J; Rogge S; Salfi J, 2013, 'Transport through a single donor in p-type silicon', Applied Physics Letters, 103, pp. 043106, http://dx.doi.org/10.1063/1.4816439
Verduijn A; Tettamanzi G; Rogge S, 2013, 'Wave function control over a single donor atom', Nano Letters, 14, pp. 1476 - 1480, http://dx.doi.org/10.1021/nl304518v
Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn JA; Tettamanzi G; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M, 2012, 'Few electron limit of n-type metal oxide semiconductor single electron transistors', Nanotechnology, 23, pp. 215204-1 - 215204-5, http://dx.doi.org/10.1088/0957-4484/23/21/215204
Paul A; Tettamanzi G; Lee S; Mehrotra SR; Collaert N; Biesemans S; Rogge S; Klimeck , 2012, 'Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs', Journal of Applied Physics, 110, pp. 124507 - 124516, http://dx.doi.org/10.1063/1.3660697
Tettamanzi G; Verduijn JA; Lansbergen G; Blaauboer M; Calderon M; Aquado R; Rogge S, 2012, 'Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor', Physical Review Letters, 108, pp. 46803 - 046807, http://dx.doi.org/10.1103/PhysRevLett.108.046803
Fresch B; Verduijn A; Mol J; Rogge S; Remacle F, 2012, 'Querying a quasi-classical Oracle: One-bit function identification problem implemented in a single atom transistor', Europhysics Letters, 99, pp. 28004-1 - 28004-6, http://dx.doi.org/10.1209/0295-5075/99/28004
Tung BT; Nguyen HM; Dao DV; Rogge S; Salemink HWM; Sugiyama S, 2011, 'Strain sensitive effect in a triangular lattice photonic crystal hole-modified nanocavity', IEEE Sensors Journal, 11, pp. 2657 - 2663, http://dx.doi.org/10.1109/JSEN.2011.2157122
Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, 83, http://dx.doi.org/10.1103/PhysRevB.83.239904
Jehl X; Roche B; Sanquer M; Voisin B; Wacquez R; Deshpande V; Previtali B; Vinet M; Verduijn J; Tettamanzi GC; Rogge S; Kotekar-Patil D; Ruoff M; Kern D; Wharam DA; Belli M; Prati E; Fanciulli M, 2011, 'Mass production of silicon MOS-SETs: Can we live with nano-devices' variability?', Procedia Computer Science, 7, pp. 266 - 268, http://dx.doi.org/10.1016/j.procs.2011.09.016
Mol J; Van der heijden J; Verduijn JA; Klein M; Remacle F; Rogge S, 2011, 'Balanced ternary addition using a gated silicon nanowire', Applied Physics Letters, 99, pp. 263109-1 - 263109-3, http://dx.doi.org/10.1063/1.3669536
Rahman ; Lansbergen ; Verduijn A; Tettamanzi G; Park ; Collaert ; Biesemans ; Klimeck ; Hollenberg ; Rogge S, 2011, 'Electric field reduced charging energies and two-electron bound excited states of single donors in silicon', Physical Review B, 84, pp. 115458-1 - 115458-7, http://dx.doi.org/10.1103/PhysRevB.84.115428
Rahman R; Verduijn JA; Kharche N; Lansbergen G; Klimeck ; Hollenberg ; Rogge S, 2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, 83, pp. 195323-1 - 195323-5, http://dx.doi.org/10.1103/PhysRevB.83.195323
Mol J; Verduijn A; Levine RD; Remacle F; Rogge S, 2011, 'Integrated logic circuits using single-atom transistors', Proceedings of the National Academy of Sciences of the United States of America, 108, pp. 13969 - 13972, http://dx.doi.org/10.1073/pnas.1109935108
Tettamanzi G; Paul A; Lee SH; Mehrotra S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2011, 'Interface trap density metrology of state-of-the-art undoped Si n-FinFETs', IEEE Electron Device Letters, 32, pp. 440 - 442, http://dx.doi.org/10.1109/LED.2011.2106150
Lansbergen G; Rahman R; Verduijn A; Tettamanzi G; Collaert N; Biesemans S; Klimeck G; Rogge S; Hollenberg L, 2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, 107, pp. 136602-1 - 136602-5, http://dx.doi.org/10.1103/PhysRevLett.107.136602
Gasseller M; Deninno M; Loo R; Harrison JF; Caymax M; Rogge S; Tessmer SH, 2011, 'Single-electron capacitance spectroscopy of individual dopants in silicon', Nano Letters, 11, pp. 5208 - 5212, http://dx.doi.org/10.1021/nl2025163
Tettamanzi GC; Lansbergen GP; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'A novel Kondo effect in single atom transistors', ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, pp. 319 - 321, http://dx.doi.org/10.1109/ICONN.2010.6045240
Nguyen HM; Dundar MA; van der Heijden RW; van der Drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact mach-zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics InfoBase Conference Papers
Tung BT; Dao DV; Susumu S; Nguyen HM; Rogge S; Salemink HWM, 2010, 'Strain sensitivity of a modified single-defect photonic crystal nanocavity for mechanical sensing', Proceedings of IEEE Sensors, pp. 2585 - 2588, http://dx.doi.org/10.1109/ICSENS.2010.5690169
Johnson BC; Alves A; Van Donkelaar J; Thompson S; Yang C; Jamieson D; Verduijn A; Mol J; Tettamanzi G; Rogge S; Wacquez R; Vinet M; Dzurak A, 2010, 'Single Dopant Implantation into a Nanoscale MOSFET Devices', ECS Meeting Abstracts, MA2010-02, pp. 1570 - 1570, http://dx.doi.org/10.1149/ma2010-02/23/1570
Mol JA; Beentjes SPC; Rogge S, 2010, 'A low temperature surface preparation method for STM nano-lithography on Si(100)', Applied Surface Science, 256, pp. 5042 - 5045, http://dx.doi.org/10.1016/j.apsusc.2010.03.052
Verduijn J; Tettamanzi G; Lansbergen G; Collaert N; Biesemans S; Rogge S, 2010, 'Coherent transport through a double donor system in silicon', Applied Physics Letters, 96, pp. 072110-1 - 072110-3, http://dx.doi.org/10.1063/1.3318271
Nguyen HM; Dundar MA; Van der heijden RW; Van der drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact Mach-Zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics Express, 18, pp. 6437 - 6446, http://dx.doi.org/10.1364/OE.18.006437
Johnson BC; Tettamanzi G; Alves A; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, 'Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation', Applied Physics Letters, 96, pp. 264102-1 - 264102-3, http://dx.doi.org/10.1063/1.3458783
Yan Y; Mol JA; Verduijn J; Rogge S; Levine RD; Remacle F, 2010, 'Electrically addressing a molecule-like donor pair in silicon: An atomic scale cyclable full Adder logic', Journal of Physical Chemistry C, 114, pp. 20380 - 20386, http://dx.doi.org/10.1021/jp103524d
Calderon M; Verduijn J; Lansbergen G; Tettamanzi G; Rogge S; Koiller B, 2010, 'Heterointerface effects on the charging energy of the shallow D− ground state in silicon: Role of dielectric mismatch', Physical Review - Section B - Condensed Matter, 82, pp. 075317-1 - 075317-7, http://dx.doi.org/10.1103/PhysRevB.82.075317
Rogge S, 2010, 'Nanoelectronics: Single dopants learn their place', Nature Nanotechnology, 5, pp. 100 - 101, http://dx.doi.org/10.1038/nnano.2010.11
Tettamanzi G; Lansbergen G; Paul A; Lee S; Deosarran P; Collaert N; Biesemans S; Rogge S, 2010, 'Sub-threshold study of undoped trigate nFinFET', Thin Solid Films, 518, pp. 2521 - 2523, http://dx.doi.org/10.1016/j.tsf.2009.10.114
Klein M; Mol JA; Verduijn J; Lansbergen G; Rogge S; Levine RD; Remacle F, 2010, 'Ternary logic implemented on a single dopant atom field effect silicon transistor', Applied Physics Letters, 96, pp. 043107, http://dx.doi.org/10.1063/1.3297906
Tettamanzi G; Paul A; Lansbergen G; Verduijn J; Lee S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Thermionic emission as a tool to study transport in undoped nFinFETs', IEEE Electron Device Letters, 31, pp. 150 - 152, http://dx.doi.org/10.1109/LED.2009.2036134
Lansbergen G; Tettamanzi G; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'Tunable Kondo effect in a single donor atom', Nano Letters, 10, pp. 455 - 460, http://dx.doi.org/10.1021/nl9031132
Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; van den Brink J, 2009, 'Evidence for the formation of a Mott state in potassium-intercalated pentacene', Physical Review - Section B - Condensed Matter, 79, pp. 125116-1 - 125116-8, http://dx.doi.org/10.1103/PhysRevB.79.125116
Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg L, 2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, 80, pp. 155301-1 - 155301-5, http://dx.doi.org/10.1103/PhysRevB.80.155301
Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314
Klein M; Lansbergen G; Mol JA; Rogge S; Levine RD; Remacle F, 2009, 'Reconfigurable Logic Devices on a Single Dopant Atom—Operation up to a Full Adder by Using Electrical Spectroscopy', Chemphyschem, 10, pp. 162 - 173, http://dx.doi.org/10.1002/cphc.200800568
Lansbergen G; Rahman R; Wellard C; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, 1067, pp. 12 - 17, http://dx.doi.org/10.1557/proc-1067-b03-07
Lansbergen GP; Rahman R; Wellard CJ; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, 1117, pp. 1 - 6, http://dx.doi.org/10.1557/proc-1117-j01-03
Nguyen MH; Rogge S; Caro J; van der Drift E; Salemink H, 2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', Optics InfoBase Conference Papers
Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994
Caro J; Roeling E; Rong B; Nguyen HM; Van der drift EWJM; Rogge S; Karouta F; Van der heijden RW; Salemink HWM, 2008, 'Transmission measurement of the photonic band gap of GaN photonic crystal slabs', Applied Physics Letters, 93, pp. 051117-1 - 051117-3, http://dx.doi.org/10.1063/1.2967744
Snijders P; Moon E; Gonzalez C; Rogge S; Ortega J; Flores F; Weitering H, 2007, 'Controlled self-organization of atom vacancies in monatomic gallium layers', Physical Review Letters, 99, pp. 116102-1 - 116102-4, http://dx.doi.org/10.1103/PhysRevLett.99.116102
Sellier H; Lansbergen G; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2007, 'Subthreshold channels at the edges of nanoscale triple-gate silicon transistors', Applied Physics Letters, 90, pp. 073502-1 - 073502-3, http://dx.doi.org/10.1063/1.2476343
Klein M; Rogge S; Remacle F; Levine RD, 2007, 'Transcending binary logic by gating three coupled quantum dots', Nano Letters, 7, pp. 2795 - 2799, http://dx.doi.org/10.1021/nl071376e
Lansbergen GP; Sellier H; Collaert N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 351 - 354, http://dx.doi.org/10.1109/ICONN.2006.340624
Sellier H; Lansbergen GP; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2006, 'Transport spectroscopy of a single dopant in a gated silicon nanowire', Physical Review Letters, 97, http://dx.doi.org/10.1103/PhysRevLett.97.206805
Snijders PC; Rogge S; Weitering HH, 2006, 'Density waves in atomic necklaces', Europhysics News, 37, pp. 27 - 30, http://dx.doi.org/10.1051/epn:2006506
Morpurgo A; Craciun M; Rogge S; Iwasa Y, 2006, 'Alkali-doped Metal-phthalocyanines: Electronic Properties and Structure', ECS Meeting Abstracts, MA2005-01, pp. 922 - 922, http://dx.doi.org/10.1149/ma2005-01/25/922
Craciun MF; Rogge S; den Boer M-JL; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Inside Front Cover: Electronic Transport through Electron-Doped Metal Phthalocyanine Materials (Adv. Mater. 3/2006)', Advanced Materials, 18, pp. NA - NA, http://dx.doi.org/10.1002/adma.200690014
Snijders P; Rogge S; Weitering H, 2006, 'Competing periodicities in fractionally filled one-dimensional bands', Physical Review Letters, 96, pp. 076801-1 - 076801-4, http://dx.doi.org/10.1103/PhysRevLett.96.076801
Craciun MF; Rogge S; den Boer M-JL; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Electronic Transport through Electron-Doped Metal Phthalocyanine Materials', Advanced Materials, 18, pp. 320 - 324, http://dx.doi.org/10.1002/adma.200501268
Margadonna S; Prassides K; Iwasa Y; Taguchi Y; Craciun MF; Rogge S; Morpurgo AF, 2006, 'Potassium Phthalocyanine, KPc: One-Dimensional Molecular Stacks Bridged by K+ Ions', Inorganic Chemistry, 45, pp. 10472 - 10478, http://dx.doi.org/10.1021/ic060727
de Boer R; Stassen A; Craciun MF; Mulder C; Molinari A; Rogge S; Morpurgo AF, 2005, 'Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors', Applied Physics Letters, 86, pp. 262109-1 - 262109-3, http://dx.doi.org/10.1063/1.1984093
Craciun MF; Rogge S; Morpurgo AF, 2005, 'Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped metal-phthalocyanine compounds', Journal of the American Chemical Society, 127, pp. 12210 - 12211, http://dx.doi.org/10.1021/ja054468j
Rogge S; Snijders P; Gonzalez C; Paul S; Ortega J; Flores F; Weitering H, 2005, 'Ga-induced atom wire formation and passivation of stepped Si(112)', Physical Review - Section B - Condensed Matter, 72, pp. 125343-1 - 125343-12, http://dx.doi.org/10.1103/PhysRevB.72.125343
Craciun MF; Rogge S; den Boer M-JL; Klapwijk T; Morpurgo AF, 2004, 'Electron transport and tunnelling spectroscopy in alkali doped metal phthalocyanines', Journal de Physique Iv, 114, pp. 607 - 610, http://dx.doi.org/10.1051/jp4:2004114144
Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics', Physical Review - Section B - Condensed Matter, 69, pp. 035338-1 - 035338-5, http://dx.doi.org/10.1103/PhysRevB.69.035338
Caro J; Vink I; Smit G; Rogge S; Klapwijk T; Loo R; Caymax M, 2004, 'Direct observation by resonant tunneling of the B+ level in a delta-doped silicon barrier', Physical Review - Section B - Condensed Matter, 69, pp. 125324-1 - 125324-5, http://dx.doi.org/10.1103/PhysRevB.69.125324
Gonzalez C; Snijders P; Ortega J; Perez R; Flores F; Rogge S; Weitering H, 2004, 'Formation of atom wires on vicinal silicon', Physical Review Letters, 93, pp. 126106-1 - 126106-4, http://dx.doi.org/10.1103/PhysRevLett.93.126106
Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Group-theoretical analysis of double acceptors in a magnetic field: Identification of the Si : B+ ground state', Physical Review - Section B - Condensed Matter, 69, pp. 085211-1 - 085211-7, http://dx.doi.org/10.1103/PhysRevB.69.085211
Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Stark effect in shallow impurities in Si', Physical Review - Section B - Condensed Matter, 70, pp. 035206-1 - 035206-10, http://dx.doi.org/10.1103/PhysRevB.70.035206
Rogge S; Durkut M; Klapwijk TM, 2003, 'Single domain transport measurements of C-60 films', PHYSICAL REVIEW B, 67, http://dx.doi.org/10.1103/PhysRevB67.033410
Smit G; Rogge S; Caro J; Klapwijk T, 2003, 'Gate-induced ionization of single dopant atoms', Physical Review - Section B - Condensed Matter, 68, pp. 193302-1 - 193302-4, http://dx.doi.org/10.1103/PhysRevB.68.193302
Snijders PC, 2003, 'New Structural Model of the Si(112)6 × 1-Ga Interface', AIP Conference Proceedings, http://dx.doi.org/10.1063/1.1639773
Craciun MF, 2003, 'Scanning Tunnelling Microscopy and Spectroscopy on Alkali Doped Copper Phthalocyanine', AIP Conference Proceedings, http://dx.doi.org/10.1063/1.1639741
Rogge S; Durkut M; Klapwijk T, 2003, 'Single domain transport measurements of C-60 films', Physical Review - Section B - Condensed Matter, 67, pp. 033410-1 - 033410-4, http://dx.doi.org/10.1103/PhysRevB.67.033410
Smit G; Rogge S; Klapwijk T, 2002, 'Enhanced tunneling across nanometer-scale metal-semiconductor interfaces', Applied Physics Letters, 80, pp. 2568 - 2570, http://dx.doi.org/10.1063/1.1467980
Smit G; Flokstra M; Rogge S; Klapwijk T, 2002, 'Scaling of micro-fabricated nanometer-sized Schottky diodes', Microelectronic Engineering, 64, pp. 429 - 433, http://dx.doi.org/10.1016/S0167-9317(02)00817-1
Smit G; Rogge S; Klapwijk T, 2002, 'Scaling of nano-Schottky-diodes', Applied Physics Letters, 81, pp. 3852 - 3854, http://dx.doi.org/10.1063/1.1521251
Rogge S; Timmerman R; Scholte P; Geerligs L; Salemink HWM, 2001, 'Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001)', Journal of Vacuum Science and Technology B, 19, pp. 659 - 665, http://dx.doi.org/10.1116/1.1372925
Rogge S; Dunn A; Melin T; Dekker C; Geerligs L, 2000, 'Electrical transport through ultrathin ordered K3C60 films on Si', Carbon, 38, pp. 1647 - 1651, http://dx.doi.org/10.1016/S0008-6223(00)00052-X
Rogge S; Timmerman R; Scholte P; Geerligs L; Salemink HWM, 2000, 'Surface polymerization of epitaxial Sb wires on Si(001)', Physical Review - Section B - Condensed Matter, 62, pp. 15341 - 15344, http://dx.doi.org/10.1103/PhysRevB.62.15341
Wilken HC; Rogge S; Götze O; Werfel T; Zwirner J, 1999, 'Specific detection by flow cytometry of histidine-tagged ligands bound to their receptors using a tag-specific monoclonal antibody', Journal of Immunological Methods, 226, pp. 139 - 145, http://dx.doi.org/10.1016/S0022-1759(99)00064-2
Zuiddam M; Rogge S; Geerligs L; Van der drift EWJM; Ilge B; Palasantzas G, 1998, 'Contact and alignment marker technology for atomic scale device fabrication', Microelectronic Engineering, 42, pp. 567 - 570, http://dx.doi.org/10.1016/S0167-9317(98)00133-6
Rogge S; Natelson D; Osheroff DD, 1997, '3He immersion cell for ultralow temperature study of amorphous solids', Review of Scientific Instruments, 68, pp. 1831 - 1834, http://dx.doi.org/10.1063/1.1148055
Rogge S; Natelson D; Osheroff D, 1997, 'He-3 immersion cell for ultralow temperature study of amorphous solids', Review of Scientific Instruments, 68, pp. 1831 - 1834, http://dx.doi.org/10.1063/1.1148055
Rogge S; Natelson D; Osheroff D, 1997, 'Nonequilibrium and hysteretic low temperature dielectric response to strain in glasses', Journal of Low Temperature Physics, 106, pp. 717 - 725, http://dx.doi.org/10.1007/BF02395933
Rogge S; Natelson D; Tigner B; Osheroff D, 1997, 'Nonlinear dielectric response of glasses at low temperature', Physical Review - Section B - Condensed Matter, 55, pp. 11256 - 11262, http://dx.doi.org/10.1103/PhysRevB.55.11256
Rogge S; Natelson D; Osheroff D, 1996, 'Anomalous behavior of epsilon(omega) in glasses at low temperature due to bias application', Czechoslovak Journal of Physics, 46, pp. 2263 - 2264, http://dx.doi.org/10.1007/BF02571123
Osheroff D; Rogge S; Natelson D, 1996, 'Anomalous dielectric properties of amorphous solids at low temperatures', Physica B - Condensed Matter, 219-220, pp. 243 - 246, http://dx.doi.org/10.1016/0921-4526(95)00708-3
Natelson D; Rogge S; Osheroff D, 1996, 'Dielectric response of two level systems to strain fields at low temperatures', Czechoslovak Journal of Physics, 46, pp. 2265 - 2266, http://dx.doi.org/10.1007/BF02571124
Rogge S; Natelson D; Osheroff D, 1996, 'Evidence for the importance of interactions between active defects in glasses', Physical Review Letters, 76, pp. 3136 - 3139, http://dx.doi.org/10.1103/PhysRevLett.76.3136
Osheroff D; Rogge S; Natelson D, 1996, 'Interactions between active defects in glasses at low temperatures', Czechoslovak Journal of Physics, 46, pp. 3295 - 3302, http://dx.doi.org/10.1007/BF02548143
Salvino D; Rogge S; Tigner B; Osheroff D, 1994, 'Low Temperature ac Dielectric Response of Glasses to High dc Electric Fields', Physical Review Letters, 73, pp. 268 - 271, http://dx.doi.org/10.1103/PhysRevLett.73.268
Rogge S; Salvino D; Tigner B; Osheroff D, 1994, 'Low temperature time and electric field dependence of the dielectric constant in amorphous materials', Physica B - Condensed Matter, 194-196, pp. 407 - 408, http://dx.doi.org/10.1016/0921-4526(94)90533-9
Berkman IR; Lyasota A; de Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu BB; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2022, 'In-Situ Single-Photon Detection of Er Sites in Si', in 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings, Optica Publishing Group, presented at CLEO: QELS_Fundamental Science, http://dx.doi.org/10.1364/cleo_qels.2022.fm5d.5
Culcer D; Salfi J; Rogge S, 2016, 'A single-atom spin-orbit qubit in Si (Conference Presentation)', in Drouhin H-J; Wegrowe J-E; Razeghi M (eds.), Spintronics IX, SPIE, presented at Spintronics IX, 28 August 2016 - 01 September 2016, http://dx.doi.org/10.1117/12.2231059
Rossi A; Tanttu T; Tan KY; Zhao R; Chan KW; Iisakka I; Tettamanzi GC; Rogge S; Dzurak AS; Mottonen M, 2015, 'A silicon single-electron pump with tunable electrostatic confinement', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348563
Van Der Heijden J; Tettamanzi GC; Rogge S, 2015, 'Modeling the pumping of electrons through a single dopant atom in a Si MOSFET', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, pp. 89 - 90, http://dx.doi.org/10.1109/SNW.2014.7348561
Van Der Heijden J; Salfi J; Mol JA; Verduijn J; Tettamanzi GC; Hamilton AR; Collaert N; Rogge S, 2015, 'Probing a single acceptor in a silicon nanotransistor', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348587
Fernandez-Gonzalvo X; Williamson LA; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Upconversion of microwave to optical photons using erbium impurities in a solid', in Conference on Lasers and Electro-Optics Europe - Technical Digest
Rossi A; Tanttu T; Tan KY; Zhao R; Chan KW; Iisakka I; Tettamanzi GC; Rogge S; Möttönen M; Dzurak AS, 2014, 'Effects of electrostatic confinement in a silicon single-electron pump', in CPEM Digest (Conference on Precision Electromagnetic Measurements), pp. 440 - 441, http://dx.doi.org/10.1109/CPEM.2014.6898448
Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2014, 'Frequency up-conversion of microwave photons to the telecommunications band in an Er: YSO crystal', in Optics InfoBase Conference Papers
Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2014, 'Frequency up-conversion of microwave photons to the telecommunications band in an Er: YSO crystal', in Optics InfoBase Conference Papers
Tettamanzi GC; Van Der Heijden J; Rogge S, 2014, 'Charge pumping through isolated dopant atoms', in 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, pp. 298 - 300, http://dx.doi.org/10.1109/COMMAD.2014.7038716
Tettamanzi GC; Van Der Heijden J; Rogge S, 2014, 'Charge pumping through isolated dopant atoms', in 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, pp. 298 - 300, http://dx.doi.org/10.1109/COMMAD.2014.7038716
Yin CM; Rancic M; Stavrias N; de Boo GG; McCallum JC; Sellars MJ; Rogge S, 2012, 'Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor', in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings, IEEE, Piscataway, NJ, United States, pp. 197 - 198, presented at 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC., 12 December 2012 - 14 December 2012, http://dx.doi.org/10.1109/COMMAD.2012.6472428
Tettamanzi G; Lansbergen G; Verduijn J; Rahman R; Paul A; Lee SH; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Innovative characterization techniques for ultra-scaled FinFETs', in Proceedings of the 10th IEEE International Conference on Nanotechnology, IEEE, Korea, pp. 25 - 30, presented at 10th IEEE International Conference on Nanotechnology joint Symposium with Nano Korea 2010, Korea, 17 August 2010 - 20 August 2010, http://dx.doi.org/10.1109/NANO.2010.5698069
Nguyen HM; Van Der Drift EWJM; Caro J; Rogge S; Salemink HWM, 2010, 'Photonic crystal Mach-Zehnder interferometer operating in the self-collimation mode of light', in Adibi A; Lin SY; Scherer A (eds.), Proceedings of SPIE - The International Society for Optical Engineering, SPIE-INT SOC OPTICAL ENGINEERING, San Francisco, CA, presented at Conference on Photonic and Phononic Crystal Materials and Devices X, San Francisco, CA, 26 - 28 January 2010, http://dx.doi.org/10.1117/12.841701
Lansbergen GP; Rahman R; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2009, '+Level spectrum of single gated as donors', in Caldas MJ; Studart N (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Rio de Janeiro, BRAZIL, pp. 93 - 94, presented at 29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, 27 July - 01 August 2008, http://dx.doi.org/10.1063/1.3295570
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Zhang Y; Fan W; Yang J; Guan H; Zhang Q; Qin X; Duan C; de Boo GG; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution, , http://dx.doi.org/10.48550/arxiv.2212.00440
Mikhail D; Voisin B; Medar DDS; Buchs G; Rogge S; Rachel S, 2022, Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation, , http://dx.doi.org/10.48550/arxiv.2208.03906
Yang J; Fan W; Zhang Y; Duan C; Boo GGD; Ahlefeldt RL; Longdell JJ; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si, , http://dx.doi.org/10.1103/PhysRevB.105.235306
Yang J; Wang J; Fan W; Zhang Y; Duan C; Hu G; Boo GGD; Johnson BC; McCallum JC; Rogge S; Yin C; Du J, 2022, Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor, , http://dx.doi.org/10.1103/PhysRevApplied.18.034018
Joch DJ; Slussarenko S; Wang Y; Pepper A; Xie S; Xu B-B; Berkman IR; Rogge S; Pryde GJ, 2021, Certified Random Number Generation from Quantum Steering, , http://dx.doi.org/10.48550/arxiv.2111.09506
Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2021, Valley population of donor states in highly strained silicon, , http://dx.doi.org/10.48550/arxiv.2109.08540
Hu G; Ahlefeldt RL; de Boo GG; Lyasota A; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2021, Optical and Zeeman spectroscopy of individual Er ion pairs in silicon, , http://dx.doi.org/10.48550/arxiv.2108.07442
Berkman IR; Lyasota A; de Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu B-B; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2021, Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection, , http://dx.doi.org/10.48550/arxiv.2108.07090
Voisin B; Salfi J; Rahman R; Rogge S, 2021, Novel characterisation of dopant-based qubits, , http://dx.doi.org/10.48550/arxiv.2107.00784
Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2021, Valley interference and spin exchange at the atomic scale in silicon, , http://dx.doi.org/10.48550/arxiv.2105.10931
Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02906
Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02904
Xu B-B; de Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2020, Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators, , http://dx.doi.org/10.48550/arxiv.2011.14792
Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2020, Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation, , http://dx.doi.org/10.48550/arxiv.2009.08594
Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, Scanned single-electron probe inside a silicon electronic device, , http://dx.doi.org/10.48550/arxiv.2001.10225
de Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars M; Rogge S, 2019, High resolution spectroscopy of individual erbium ions in strong magnetic fields, , http://dx.doi.org/10.48550/arxiv.1912.05795
Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2019, Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits, , http://dx.doi.org/10.48550/arxiv.1911.11143
Everts J; King GGG; Lambert N; Kocsis S; Rogge S; Longdell JJ, 2019, Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare earth ion spins, , http://dx.doi.org/10.48550/arxiv.1911.11311
Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, Hole-Spin-Echo Envelope Modulations, , http://dx.doi.org/10.48550/arxiv.1906.11953
Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2019, Certification of spin-based quantum simulators, , http://dx.doi.org/10.48550/arxiv.1905.01724
Kobayashi T; Salfi J; van der Heijden J; Chua C; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, Engineering long spin coherence times of spin-orbit systems, , http://dx.doi.org/10.48550/arxiv.1809.10859
Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, Single-shot single-gate RF spin readout in silicon, , http://dx.doi.org/10.48550/arxiv.1809.01802
Zhang Q; Hu G; de Boo GG; Rancic M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2018, Single rare-earth ions as atomic-scale probes in ultra-scaled transistors, , http://dx.doi.org/10.48550/arxiv.1803.01573
Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, Gigahertz Single-Electron Pumping Mediated by Parasitic States, , http://dx.doi.org/10.48550/arxiv.1803.00791
Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon, , http://dx.doi.org/10.48550/arxiv.1706.09981
Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, , http://dx.doi.org/10.48550/arxiv.1706.09261
Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2017, Entanglement control and magic angles for acceptor qubits in Si, , http://dx.doi.org/10.48550/arxiv.1706.08858
Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, , http://dx.doi.org/10.48550/arxiv.1703.04175
van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Lavieville R; Simmons MY; Rogge S, 2017, Spin-orbit dynamics of single acceptor atoms in silicon, , http://dx.doi.org/10.48550/arxiv.1703.03538
Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies, , http://dx.doi.org/10.48550/arxiv.1702.08569
Klymenko MV; Rogge S; Remacle F, 2016, Linear and planar molecules formed by coupled P donors in silicon, , http://dx.doi.org/10.48550/arxiv.1611.07154
Klymenko MV; Rogge S; Remacle F, 2016, Multi-valley envelope function equations and effective potentials for P impurity in silicon, , http://dx.doi.org/10.48550/arxiv.1611.05908
van der Heijden J; Tettamanzi GC; Rogge S, 2016, Dynamics of a single-atom electron pump, , http://dx.doi.org/10.48550/arxiv.1607.08696
Salfi J; Tong M; Rogge S; Culcer D, 2016, Quantum Computing with Acceptor Spins in Silicon, , http://dx.doi.org/10.48550/arxiv.1606.04697
Agundez R; Hill CD; Hollenberg LCL; Rogge S; Blaauboer M, 2016, Superadiabatic quantum state transfer in spin chains, , http://dx.doi.org/10.48550/arxiv.1604.04885
Kobayashi T; van der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot, , http://dx.doi.org/10.48550/arxiv.1604.04020
Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LLC, 2016, Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision, , http://dx.doi.org/10.48550/arxiv.1601.02326
Rahman R; Verduijn J; Wang Y; Yin C; De Boo G; Klimeck G; Rogge S, 2015, Bulk and sub-surface donor bound excitons in silicon under electric fields, , http://dx.doi.org/10.48550/arxiv.1510.00065
Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, Radio frequency reflectometry and charge sensing of a precision placed donor in silicon, , http://dx.doi.org/10.48550/arxiv.1509.03315
Salfi J; Mol JA; Culcer D; Rogge S, 2015, Charge-insensitive single-atom spin-orbit qubit in silicon, , http://dx.doi.org/10.48550/arxiv.1508.04259
Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2015, Donor Wavefunctions in Si Gauged by STM Images, , http://dx.doi.org/10.48550/arxiv.1508.02772
Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2015, Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon, , http://dx.doi.org/10.48550/arxiv.1507.06125
Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures, , http://dx.doi.org/10.48550/arxiv.1506.01224
Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon, , http://dx.doi.org/10.48550/arxiv.1504.06370
Urdampilleta M; Chatterjee A; Lo CC; Kobayashi T; Mansir J; Barraud S; Betz AC; Rogge S; Gonzalez-Zalba MF; Morton JJL, 2015, Charge dynamics and spin blockade in a hybrid double quantum dot in silicon, , http://dx.doi.org/10.48550/arxiv.1503.01049
Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, , http://dx.doi.org/10.48550/arxiv.1501.05669
Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, Spatially resolved resonant tunneling on single atoms in silicon, , http://dx.doi.org/10.48550/arxiv.1501.05042
Fernandez-Gonzalvo X; Chen Y-H; Yin C; Rogge S; Longdell JJ, 2015, Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal, , http://dx.doi.org/10.48550/arxiv.1501.02014
Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2014, Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory, , http://dx.doi.org/10.48550/arxiv.1410.1951
Agundez R; Salfi J; Rogge S; Blaauboer M, 2014, Local Kondo temperatures in atomic chains, , http://dx.doi.org/10.48550/arxiv.1408.6447
Rossi A; Tanttu T; Tan KY; Iisakka I; Zhao R; Chan KW; Tettamanzi GC; Rogge S; Dzurak AS; Möttönen M, 2014, An accurate single-electron pump based on a highly tunable silicon quantum dot, , http://dx.doi.org/10.48550/arxiv.1406.1267
Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, Spatially Resolving Valley Quantum Interference of a Donor in Silicon, , http://dx.doi.org/10.48550/arxiv.1403.4648
Tettamanzi GC; Wacquez R; Rogge S, 2014, Charge Pumping Through a Single Donor Atom, , http://dx.doi.org/10.48550/arxiv.1401.3080
Verduijn J; Vinet M; Rogge S, 2013, Radio-frequency dispersive detection of donor atoms in a field-effect transistor, , http://dx.doi.org/10.48550/arxiv.1312.3363
Yin C; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, Optical addressing of an individual erbium ion in silicon, , http://dx.doi.org/10.48550/arxiv.1304.2117
Mol JA; Salfi J; Miwa JA; Simmons MY; Rogge S, 2013, Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants, , http://dx.doi.org/10.48550/arxiv.1303.2712
Agundez RR; Verduijn J; Rogge S; Blaauboer M, 2013, Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system, , http://dx.doi.org/10.48550/arxiv.1301.4235
Verduijn J; Agundez RR; Blaauboer M; Rogge S, 2012, Non-local coupling of two donor-bound electrons, , http://dx.doi.org/10.48550/arxiv.1209.4726
Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2012, Silicon Quantum Electronics, , http://dx.doi.org/10.48550/arxiv.1206.5202
Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn A; Tettamanzi G; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M, 2012, Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors, , http://dx.doi.org/10.48550/arxiv.1203.4811
Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2011, New tools for the direct characterisation of FinFETs, , http://dx.doi.org/10.48550/arxiv.1111.5655
Lansbergen GP; Rahman R; Tettamanzi GC; Verduijn J; Hollenberg LCL; Klimeck G; Rogge S, 2011, Dopant metrology in advanced FinFETs, , http://dx.doi.org/10.48550/arxiv.1111.4238
Mol JA; van der Heijden J; Verduijn J; Klein M; Remacle F; Rogge S, 2011, Balanced ternary addition using a gated silicon nanowire, , http://dx.doi.org/10.48550/arxiv.1108.5527
Rahman R; Lansbergen GP; Verduijn J; Tettamanzi GC; Park SH; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, , http://dx.doi.org/10.48550/arxiv.1107.2701
Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon, , http://dx.doi.org/10.48550/arxiv.1102.5311
Tettamanzi GC; Verduijn J; Lansbergen GP; Blaauboer M; Calderón MJ; Aguado R; Rogge S, 2011, Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor, , http://dx.doi.org/10.48550/arxiv.1102.2977
Paul A; Tettamanzi GC; Lee S; Mehrotra S; Colleart N; Biesemans S; Rogge S; Klimeck G, 2011, Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs, , http://dx.doi.org/10.48550/arxiv.1102.0140
Tettamanzi GC; Paul A; Lee S; Mehrotra SR; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs, , http://dx.doi.org/10.48550/arxiv.1011.2582
Lansbergen GP; Rahman R; Verduijn J; Tettamanzi GC; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2010, Lifetime enhanced transport in silicon due to spin and valley blockade, , http://dx.doi.org/10.48550/arxiv.1008.1381
Johnson BC; Tettamanzi GC; Alves ADC; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation, , http://dx.doi.org/10.48550/arxiv.1007.5190
Calderon MJ; Verduijn J; Lansbergen GP; Tettamanzi GC; Rogge S; Koiller B, 2010, Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch, , http://dx.doi.org/10.48550/arxiv.1005.1237
Tettamanzi GC; Paul A; Lansbergen GP; Verduijn J; Lee S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, Thermionic Emission as a tool to study transport in undoped nFinFETs, , http://dx.doi.org/10.48550/arxiv.1003.5441
Verduijn J; Tettamanzi GC; Lansbergen GP; Collaert N; Biesemans S; Rogge S, 2009, Coherent transport through a double donor system in silicon, , http://dx.doi.org/10.48550/arxiv.0912.2196
Lansbergen GP; Tettamanzi GC; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2009, Tunable Kondo effect in a single donor atom, , http://dx.doi.org/10.48550/arxiv.0909.5602
Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg LCL, 2009, Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors, , http://dx.doi.org/10.48550/arxiv.0905.3200
Rahman R; Lansbergen GP; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg LCL, 2009, Orbital Stark effect and quantum confinement transition of donors in silicon, , http://dx.doi.org/10.48550/arxiv.0904.4281
Gasseller M; Loo R; Harrison JF; Caymax M; Rogge S; Tessmer SH, 2009, Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon, , http://dx.doi.org/10.48550/arxiv.0904.2617
Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; Brink JVD, 2008, Evidence for the formation of a Mott state in potassium-intercalated pentacene, , http://dx.doi.org/10.48550/arxiv.0802.2813
Sellier H; Lansbergen GP; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2006, Transport spectroscopy of a single dopant in a gated silicon nanowire, , http://dx.doi.org/10.48550/arxiv.cond-mat/0608159
Sellier H; Lansbergen GP; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2006, Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors, , http://dx.doi.org/10.48550/arxiv.cond-mat/0603430
Craciun MF; Rogge S; Morpurgo AF, 2006, Evolution of the conductivity of potassium-doped pentacene films, , http://dx.doi.org/10.48550/arxiv.cond-mat/0603261
Craciun MF; Rogge S; Morpurgo AF, 2006, Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped Metal-Phthalocyanine compounds, , http://dx.doi.org/10.48550/arxiv.cond-mat/0602329
Snijders PC; Rogge S; Weitering HH, 2005, Competing periodicities in fractionally filled one-dimensional bands, , http://dx.doi.org/10.48550/arxiv.cond-mat/0510574
Snijders PC; Gonzalez C; Rogge S; Perez R; Ortega J; Flores F; Weitering HH, 2005, Ga-induced atom wire formation and passivation of stepped Si(112), , http://dx.doi.org/10.48550/arxiv.cond-mat/0505343
de Boer RWI; Stassen AF; Craciun MF; Mulder CL; Molinari A; Rogge S; Morpurgo AF, 2005, Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors, , http://dx.doi.org/10.48550/arxiv.cond-mat/0503282
Gonzalez C; Snijders PC; Ortega J; Perez R; Flores F; Rogge S; Weitering HH, 2004, Formation of atom wires on vicinal silicon, , http://dx.doi.org/10.48550/arxiv.cond-mat/0404285
Craciun MF; Rogge S; Boer MJLD; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2004, Electronic transport through electron-doped Metal-Phthalocyanine Materials, , http://dx.doi.org/10.48550/arxiv.cond-mat/0401036
Caro J; Vink ID; Smit GDJ; Rogge S; Klapwijk TM, 2003, Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier, , http://dx.doi.org/10.48550/arxiv.cond-mat/0309139
Rogge S; Durkut M; Klapwijk TM, 2002, Single domain transport measurements of C60 films, , http://dx.doi.org/10.48550/arxiv.cond-mat/0206221