Scientia Professor Sven Rogge

Dean of Science

PhD in Physics (Stanford University, 1997) | BSc in Physics (Universität Karlsruhe, 1991)

Science

School of Physics

Professor Sven Rogge is the Dean of the Faculty of Science at the University of New South Wales, Sydney (UNSW). Sven’s research interest is in condensed matter physics, in particular quantum electronics, at the School of Physics. Sven works on quantum computation in silicon in the ARC Centre for Quantum Computation and Communication Technology. In a team of enthusiastic researchers, they work on gaining atomistic insight into the interactions of quantum objects, like atoms and qubits, with their environment. This allows the team to manipulate quantum information and minimise decoherence. Before joining UNSW in 2011 Sven worked at the Kavli Institute for Quantum Nano Science at Delft University and Stanford University.

Telephone

+61 2 9385 5979

Location

Newton Building (2nd floor)

Control entanglement in a solid-state system, i.e. qubits

Study the interaction between qubits and light

Build and control molecular states in a solid with atomic precision
The goal of my research program is to understand the physics of qubit coupling with the environment to understand decoherence pathways and to control. The control over the electron wavefunction requires interface which lead to the loss of bulk properties of the qubit due to physical processes like the valley-orbit coupling, exchange, and many-body effects in coherent coupling. The atomistic understanding of the interaction between the environment and the qubit is essential for quantum computation since it allows the achievement of optimal coherence times and optimal robustness of the quantum gates. Optical addressing of electrons in Si is nontrivial but vastly beneficial due to the gained flexibility and unprecedented high resolution. We investigate efficient read-out and coupling schemes to open up new pathways into optical control.
We look for enthusiastic PhD and Honours candidates for research projects. Prestigious Scholarship are available which are typically valued at $36,000 per annum for up to three-and-a-half years. The successful scholarship applicant will be expected to enrol for a PhD degree and should have an honours degree (level 1 or 2A) or equivalent, in Physics, Applied Physics, Material Science or a related subject. International applicants with a Masters degree are strongly encouraged to apply. Interested candidates should contact me to discuss possible projects and the application procedure. International applicants are very welcome! Please email an application containing a complete resume including telephone numbers, email address, and contact details of three academic referees to me. You will get a confirmation within a few days. The scholarships will remain open until filled.
There are always projects in the main research areas which focus on low temperature scanning-tunnelling spectroscopy, atomistic transport, and the interaction of light and matter at the atomic scale. We have a team of 15 enthusiastic researchers ranging from undergraduates to postdoctoral fellows. My group combines different research strengths and is very international. UNSW offers a first class laboratory and intellectual environment for atomic-scale electronics research.
PHY3118: Quantum Physics of Solids and Devices
I am the President of the Australian Institute of Physics.

Publications

Book Chapters
Journal Articles
Conference Papers
Patents
Preprints

Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10

Mol J; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-15

Verduijn J; Tettamanzi G; Rogge S, 2013, 'Orbital Structure and Transport Characteristics of Single Donors', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-10

Mol JA; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Prati E; Shinada T (ed.), Single Atom Nanoelectronics, PAN STANFORD PUBLISHING PTE LTD, pp. 329 - 343, http://dx.doi.org/10.4032/9789814316699

, 2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15

Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2012, 'New tools for the direct characterisation of FinFETS', in CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications, pp. 361

Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034

Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034

Berkman IR; Lyasota A; De Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu BB; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2023, 'Observing Er3+ Sites in Si with an in Situ Single-Photon Detector', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.014037

Mikhail D; Voisin B; St Medar DD; Buchs G; Rogge S; Rachel S, 2022, 'Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.195408

Joch DJ; Slussarenko S; Wang Y; Pepper A; Xie S; Xu BB; Berkman IR; Rogge S; Pryde GJ, 2022, 'Certified random-number generation from quantum steering', Physical Review A, 106, http://dx.doi.org/10.1103/PhysRevA.106.L050401

Yang J; Wang J; Fan W; Zhang Y; Duan C; Hu G; De Boo GG; Johnson BC; McCallum JC; Rogge S; Yin C; Du J, 2022, 'Spectral Broadening of a Single Er3+ Ion in a Si Nanotransistor', Physical Review Applied, 18, http://dx.doi.org/10.1103/PhysRevApplied.18.034018

Yang J; Fan W; Zhang Y; Duan C; De Boo GG; Ahlefeldt RL; Longdell JJ; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, 'Zeeman and hyperfine interactions of a single Er 3+ 167 ion in Si', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.235306

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', Materials for Quantum Technology, 2, pp. 025002 - 025002, http://dx.doi.org/10.1088/2633-4356/ac5d1d

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006

Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007

Tankasala A; Voisin B; Kembrey Z; Salfi J; Hsueh YL; Osika EN; Rogge S; Rahman R, 2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.155158

Hu G; Ahlefeldt RL; De Boo GG; Lyasota A; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Single site optical spectroscopy of coupled Er3+ion pairs in silicon', Quantum Science and Technology, 7, http://dx.doi.org/10.1088/2058-9565/ac56c7

Hu G; De Boo GG; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Erratum: Time-Resolved Photoionization Detection of a Single Er3+Ion in Silicon (Nano Letters (2022) 22:1 (396-401) DOI: 10.1021/acs.nanolett.1c04072)', Nano Letters, 22, pp. 1456 - 1456, http://dx.doi.org/10.1021/acs.nanolett.2c00173

Hu G; De Boo GG; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Time-Resolved Photoionization Detection of a Single Er3+Ion in Silicon', Nano Letters, 22, pp. 396 - 401, http://dx.doi.org/10.1021/acs.nanolett.1c04072

Chong S; Rogge SMJ; Kim J, 2021, 'Tunable Electrical Conductivity of Flexible Metal-Organic Frameworks', CHEMISTRY OF MATERIALS, 34, pp. 254 - 265, http://dx.doi.org/10.1021/acs.chemmater.1c03236

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2021, 'Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits', npj Quantum Information, 7, http://dx.doi.org/10.1038/s41534-021-00386-2

Voisin B; Salfi J; Rahman R; Rogge S, 2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, 46, pp. 616 - 622, http://dx.doi.org/10.1557/s43577-021-00136-x

Xu BB; De Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2021, 'Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators', Physical Review Applied, 15, http://dx.doi.org/10.1103/PhysRevApplied.15.044014

Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2021, 'Isotopic enrichment of silicon by high fluence 28Si- ion implantation', Physical Review Materials, 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.014601

Kobayashi T; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl HJ; Simmons MY; Rogge S, 2021, 'Engineering long spin coherence times of spin–orbit qubits in silicon', Nature Materials, 20, pp. 38 - 42, http://dx.doi.org/10.1038/s41563-020-0743-3

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, 11, pp. 6124, http://dx.doi.org/10.1038/s41467-020-19835-1

De Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars MJ; Rogge S, 2020, 'High-resolution spectroscopy of individual erbium ions in strong magnetic fields', Physical Review B, 102, http://dx.doi.org/10.1103/PhysRevB.102.155309

Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, 'Scanned Single-Electron Probe inside a Silicon Electronic Device', ACS Nano, 14, pp. 9449 - 9455, http://dx.doi.org/10.1021/acsnano.0c00736

Rogge S, 2020, 'The role of science in the international response to COVID-19 and the imminent cuts to stem education', Australian Physics, 57, pp. 7

Everts JR; King GGG; Lambert NJ; Kocsis S; Rogge S; Longell JJ, 2020, 'Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare-earth ion spins', Physical Review B, 101, http://dx.doi.org/10.1103/PhysRevB.101.214414

Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2020, 'Certification of spin-based quantum simulators', Physical Review A, 101, http://dx.doi.org/10.1103/PhysRevA.101.052344

嵩小; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2019, 'シリコン中のアクセプタ不純物スピン状態の制御による長いコヒーレンス時間の実現', , pp. 265 - 265, http://dx.doi.org/10.11316/jpsgaiyo.73.2.0_265

Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, 'Hole spin echo envelope modulations', Physical Review B, 100, http://dx.doi.org/10.1103/PhysRevB.100.125402

Zhang Q; Hu G; De Boo GG; Rančić M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2019, 'Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors', Nano Letters, 19, pp. 5025 - 5030, http://dx.doi.org/10.1021/acs.nanolett.9b01281

Zhang Y; Shi L; Hu D; Chen S; Xie S; Lu Y; Cao Y; Zhu Z; Jin L; Guan BO; Rogge S; Li X, 2019, 'Full-visible multifunctional aluminium metasurfaces by: In situ anisotropic thermoplasmonic laser printing', Nanoscale Horizons, 4, pp. 601 - 609, http://dx.doi.org/10.1039/c9nh00003h

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, 4, pp. eaat9199, http://dx.doi.org/10.1126/sciadv.aat9199

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.041032

嵩小; van der Heijden J; Salfi J; House MG; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, 'Spin Echo Study of Boron in 28Si at Millikelvin Temperature', , pp. 1023 - 1023, http://dx.doi.org/10.11316/jpsgaiyo.72.2.0_1023

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.031049

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, 'Gigahertz Single-Electron Pumping Mediated by Parasitic States', Nano Letters, 18, pp. 4141 - 4147, http://dx.doi.org/10.1021/acs.nanolett.8b00874

Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2018, 'Entanglement control and magic angles for acceptor qubits in Si', Applied Physics Letters, 113, http://dx.doi.org/10.1063/1.5036521

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, 97, http://dx.doi.org/10.1103/PhysRevB.97.195301

Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, 'Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon', Nanoscale, 9, pp. 17013 - 17019, http://dx.doi.org/10.1039/c7nr05081j

Fresch B; Bocquel J; Hiluf D; Rogge S; Levine RD; Remacle F, 2017, 'Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon', ChemPhysChem, 18, pp. 1790 - 1797, http://dx.doi.org/10.1002/cphc.201700222

Klymenko MV; Rogge S; Remacle F, 2017, 'Electronic states and valley-orbit coupling in linear and planar molecules formed by coupled P donors in silicon', Physical Review B, 95, http://dx.doi.org/10.1103/PhysRevB.95.205301

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362

Van Der Heijden J; Tettamanzi GC; Rogge S, 2017, 'Dynamics of a single-atom electron pump', Scientific Reports, 7, http://dx.doi.org/10.1038/srep44371

Fresch B; Bocquel J; Rogge S; Levine RD; Remacle F, 2017, 'A Probabilistic Finite State Logic Machine Realized Experimentally on a Single Dopant Atom', Nano Letters, 17, pp. 1846 - 1852, http://dx.doi.org/10.1021/acs.nanolett.6b05149

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies (vol 11, pg 2444, 2017)', ACS NANO, 11, pp. 3420 - 3420, http://dx.doi.org/10.1021/acsnano.6b08154

Agundez RR; Hill CD; Hollenberg LCL; Rogge S; Blaauboer M, 2017, 'Superadiabatic quantum state transfer in spin chains', Physical Review A, 95, http://dx.doi.org/10.1103/PhysRevA.95.012317

House MG; Bartlett I; Pakkiam P; Koch M; Peretz E; Van Der Heijden J; Kobayashi T; Rogge S; Simmons MY, 2016, 'High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation', Physical Review Applied, 6, http://dx.doi.org/10.1103/PhysRevApplied.6.044016

Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83

Salfi J; Mol JA; Culcer D; Rogge S, 2016, 'Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon', Physical Review Letters, 116, http://dx.doi.org/10.1103/PhysRevLett.116.246801

Salfi J; Tong M; Rogge S; Culcer D, 2016, 'Quantum computing with acceptor spins in silicon', Nanotechnology, 27, http://dx.doi.org/10.1088/0957-4484/27/24/244001

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, 7, http://dx.doi.org/10.1038/ncomms11342

Kobayashi T; Van Der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, 'Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system', Applied Physics Letters, 108, http://dx.doi.org/10.1063/1.4945736

Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2016, 'Donor wave functions in Si gauged by STM images', Physical Review B, 93, http://dx.doi.org/10.1103/PhysRevB.93.045303

Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal', Physical Review A - Atomic, Molecular, and Optical Physics, 92, http://dx.doi.org/10.1103/PhysRevA.92.062313

House MG; Kobayashi T; Weber B; Hile SJ; Watson TF; Van Der Heijden J; Rogge S; Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, 6, http://dx.doi.org/10.1038/ncomms9848

Klymenko MV; Rogge S; Remacle F, 2015, 'Multivalley envelope function equations and effective potentials for phosphorus impurity in silicon', Physical Review B - Condensed Matter and Materials Physics, 92, http://dx.doi.org/10.1103/PhysRevB.92.195302

Hill CD; Peretz E; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY; Hollenberg LCL, 2015, 'Quantum Computing: A surface code quantum computer in silicon', Science Advances, 1, http://dx.doi.org/10.1126/sciadv.1500707

Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4929827

Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, 'A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4928589

Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, 91, http://dx.doi.org/10.1103/PhysRevB.91.245209

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, 106, http://dx.doi.org/10.1063/1.4921640

Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154207

Schofield SR; Rogge S, 2015, 'Single dopants in semiconductors', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/150301

Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154203

Agundez RR; Salfi J; Rogge S; Blaauboer M, 2015, 'Local Kondo temperatures in atomic chains', Physical Review B - Condensed Matter and Materials Physics, 91, http://dx.doi.org/10.1103/PhysRevB.91.041117

Urdampilleta M; Chatterjee A; Lo CC; Kobayashi T; Mansir J; Barraud S; Betz AC; Rogge S; Gonzalez-Zalba MF; Morton JJL, 2015, 'Charge dynamics and spin blockade in a hybrid double quantum dot in silicon', Physical Review X, 5, http://dx.doi.org/10.1103/PhysRevX.5.031024

Rossi A; Tanttu T; Tan KY; Iisakka I; Zhao R; Chan KW; Tettamanzi GC; Rogge S; Dzurak AS; Möttönen M, 2014, 'An accurate single-electron pump based on a highly tunable silicon quantum dot', Nano Letters, 14, pp. 3405 - 3411, http://dx.doi.org/10.1021/nl500927q

Van Der Heijden J; Salfi J; Mol JA; Verduijn J; Tettamanzi GC; Hamilton AR; Collaert N; Rogge S, 2014, 'Probing the spin states of a single acceptor atom', Nano Letters, 14, pp. 1492 - 1496, http://dx.doi.org/10.1021/nl4047015

Verduijn J; Vinet M; Rogge S, 2014, 'Radio-frequency dispersive detection of donor atoms in a field-effect transistor', Applied Physics Letters, 104, pp. 102107-1 - 102107-4, http://dx.doi.org/10.1063/1.4868423

Tettamanzi GC; Wacquez R; Rogge S, 2014, 'Charge pumping through a single donor atom', New Journal of Physics, 16, http://dx.doi.org/10.1088/1367-2630/16/6/063036

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941

Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2013, 'Silicon Quantum Electronics', Reviews of Modern Physics, 85, pp. 961 - 1019, http://dx.doi.org/10.1103/RevModPhys.85.961

Rogge S; Sellars MJ, 2013, 'Quantum computing: Atomic clocks in the solid state', Nature Nanotechnology, 8, pp. 544 - 545, http://dx.doi.org/10.1038/nnano.2013.152

Tettamanzi G, 2013, 'Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade (vol 107, 136602, 2011)', Physical Review Letters, 110, pp. 49901 - 049901, http://dx.doi.org/10.1103/PhysRevLett.110.049901

Simmons MY; Miwa JA; Rogge S; Mol J; Salfi J, 2013, 'Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants', Physical Review B, 87, pp. 245417, http://dx.doi.org/10.1103/PhysRevB.87.245417

Agundez RR; Verduijn J; Rogge S; Blaauboer M, 2013, 'Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system', Physical Review B, 87, pp. Article number235407, http://dx.doi.org/10.1103/PhysRevB.87.235407

Collini E; Levine RD; Remacle F; Rogge S; Willner I, 2013, 'Multi project: Multi-valued and parallel molecular logic', International Journal of Unconventional Computing, 8, pp. 307 - 312

Verduijn A; Agundez RR; Blaauboer M; Rogge S, 2013, 'Non-local coupling of two donor-bound electrons', New Journal of Physics, 15, http://dx.doi.org/10.1088/1367-2630/15/3/033020

Yin CM; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, 'Optical addressing of an individual erbium ion in silicon', Nature, 497, pp. 91 - 94, http://dx.doi.org/10.1038/nature12081

Simmons MY; Miwa JA; Mol J; Rogge S; Salfi J, 2013, 'Transport through a single donor in p-type silicon', Applied Physics Letters, 103, pp. 043106, http://dx.doi.org/10.1063/1.4816439

Verduijn A; Tettamanzi G; Rogge S, 2013, 'Wave function control over a single donor atom', Nano Letters, 14, pp. 1476 - 1480, http://dx.doi.org/10.1021/nl304518v

Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn JA; Tettamanzi G; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M, 2012, 'Few electron limit of n-type metal oxide semiconductor single electron transistors', Nanotechnology, 23, pp. 215204-1 - 215204-5, http://dx.doi.org/10.1088/0957-4484/23/21/215204

Paul A; Tettamanzi G; Lee S; Mehrotra SR; Collaert N; Biesemans S; Rogge S; Klimeck , 2012, 'Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs', Journal of Applied Physics, 110, pp. 124507 - 124516, http://dx.doi.org/10.1063/1.3660697

Tettamanzi G; Verduijn JA; Lansbergen G; Blaauboer M; Calderon M; Aquado R; Rogge S, 2012, 'Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor', Physical Review Letters, 108, pp. 46803 - 046807, http://dx.doi.org/10.1103/PhysRevLett.108.046803

Fresch B; Verduijn A; Mol J; Rogge S; Remacle F, 2012, 'Querying a quasi-classical Oracle: One-bit function identification problem implemented in a single atom transistor', Europhysics Letters, 99, pp. 28004-1 - 28004-6, http://dx.doi.org/10.1209/0295-5075/99/28004

Tung BT; Nguyen HM; Dao DV; Rogge S; Salemink HWM; Sugiyama S, 2011, 'Strain sensitive effect in a triangular lattice photonic crystal hole-modified nanocavity', IEEE Sensors Journal, 11, pp. 2657 - 2663, http://dx.doi.org/10.1109/JSEN.2011.2157122

Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, 83, http://dx.doi.org/10.1103/PhysRevB.83.239904

Jehl X; Roche B; Sanquer M; Voisin B; Wacquez R; Deshpande V; Previtali B; Vinet M; Verduijn J; Tettamanzi GC; Rogge S; Kotekar-Patil D; Ruoff M; Kern D; Wharam DA; Belli M; Prati E; Fanciulli M, 2011, 'Mass production of silicon MOS-SETs: Can we live with nano-devices' variability?', Procedia Computer Science, 7, pp. 266 - 268, http://dx.doi.org/10.1016/j.procs.2011.09.016

Mol J; Van der heijden J; Verduijn JA; Klein M; Remacle F; Rogge S, 2011, 'Balanced ternary addition using a gated silicon nanowire', Applied Physics Letters, 99, pp. 263109-1 - 263109-3, http://dx.doi.org/10.1063/1.3669536

Rahman ; Lansbergen ; Verduijn A; Tettamanzi G; Park ; Collaert ; Biesemans ; Klimeck ; Hollenberg ; Rogge S, 2011, 'Electric field reduced charging energies and two-electron bound excited states of single donors in silicon', Physical Review B, 84, pp. 115458-1 - 115458-7, http://dx.doi.org/10.1103/PhysRevB.84.115428

Rahman R; Verduijn JA; Kharche N; Lansbergen G; Klimeck ; Hollenberg ; Rogge S, 2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, 83, pp. 195323-1 - 195323-5, http://dx.doi.org/10.1103/PhysRevB.83.195323

Mol J; Verduijn A; Levine RD; Remacle F; Rogge S, 2011, 'Integrated logic circuits using single-atom transistors', Proceedings of the National Academy of Sciences of the United States of America, 108, pp. 13969 - 13972, http://dx.doi.org/10.1073/pnas.1109935108

Tettamanzi G; Paul A; Lee SH; Mehrotra S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2011, 'Interface trap density metrology of state-of-the-art undoped Si n-FinFETs', IEEE Electron Device Letters, 32, pp. 440 - 442, http://dx.doi.org/10.1109/LED.2011.2106150

Lansbergen G; Rahman R; Verduijn A; Tettamanzi G; Collaert N; Biesemans S; Klimeck G; Rogge S; Hollenberg L, 2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, 107, pp. 136602-1 - 136602-5, http://dx.doi.org/10.1103/PhysRevLett.107.136602

Gasseller M; Deninno M; Loo R; Harrison JF; Caymax M; Rogge S; Tessmer SH, 2011, 'Single-electron capacitance spectroscopy of individual dopants in silicon', Nano Letters, 11, pp. 5208 - 5212, http://dx.doi.org/10.1021/nl2025163

Tettamanzi GC; Lansbergen GP; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'A novel Kondo effect in single atom transistors', ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology, pp. 319 - 321, http://dx.doi.org/10.1109/ICONN.2010.6045240

Nguyen HM; Dundar MA; van der Heijden RW; van der Drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact mach-zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics InfoBase Conference Papers

Tung BT; Dao DV; Susumu S; Nguyen HM; Rogge S; Salemink HWM, 2010, 'Strain sensitivity of a modified single-defect photonic crystal nanocavity for mechanical sensing', Proceedings of IEEE Sensors, pp. 2585 - 2588, http://dx.doi.org/10.1109/ICSENS.2010.5690169

Johnson BC; Alves A; Van Donkelaar J; Thompson S; Yang C; Jamieson D; Verduijn A; Mol J; Tettamanzi G; Rogge S; Wacquez R; Vinet M; Dzurak A, 2010, 'Single Dopant Implantation into a Nanoscale MOSFET Devices', ECS Meeting Abstracts, MA2010-02, pp. 1570 - 1570, http://dx.doi.org/10.1149/ma2010-02/23/1570

Mol JA; Beentjes SPC; Rogge S, 2010, 'A low temperature surface preparation method for STM nano-lithography on Si(100)', Applied Surface Science, 256, pp. 5042 - 5045, http://dx.doi.org/10.1016/j.apsusc.2010.03.052

Verduijn J; Tettamanzi G; Lansbergen G; Collaert N; Biesemans S; Rogge S, 2010, 'Coherent transport through a double donor system in silicon', Applied Physics Letters, 96, pp. 072110-1 - 072110-3, http://dx.doi.org/10.1063/1.3318271

Nguyen HM; Dundar MA; Van der heijden RW; Van der drift EWJM; Salemink HWM; Rogge S; Caro J, 2010, 'Compact Mach-Zehnder interferometer based on self-collimation of light in a silicon photonic crystal', Optics Express, 18, pp. 6437 - 6446, http://dx.doi.org/10.1364/OE.18.006437

Johnson BC; Tettamanzi G; Alves A; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, 'Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation', Applied Physics Letters, 96, pp. 264102-1 - 264102-3, http://dx.doi.org/10.1063/1.3458783

Yan Y; Mol JA; Verduijn J; Rogge S; Levine RD; Remacle F, 2010, 'Electrically addressing a molecule-like donor pair in silicon: An atomic scale cyclable full Adder logic', Journal of Physical Chemistry C, 114, pp. 20380 - 20386, http://dx.doi.org/10.1021/jp103524d

Calderon M; Verduijn J; Lansbergen G; Tettamanzi G; Rogge S; Koiller B, 2010, 'Heterointerface effects on the charging energy of the shallow D− ground state in silicon: Role of dielectric mismatch', Physical Review - Section B - Condensed Matter, 82, pp. 075317-1 - 075317-7, http://dx.doi.org/10.1103/PhysRevB.82.075317

Rogge S, 2010, 'Nanoelectronics: Single dopants learn their place', Nature Nanotechnology, 5, pp. 100 - 101, http://dx.doi.org/10.1038/nnano.2010.11

Tettamanzi G; Lansbergen G; Paul A; Lee S; Deosarran P; Collaert N; Biesemans S; Rogge S, 2010, 'Sub-threshold study of undoped trigate nFinFET', Thin Solid Films, 518, pp. 2521 - 2523, http://dx.doi.org/10.1016/j.tsf.2009.10.114

Klein M; Mol JA; Verduijn J; Lansbergen G; Rogge S; Levine RD; Remacle F, 2010, 'Ternary logic implemented on a single dopant atom field effect silicon transistor', Applied Physics Letters, 96, pp. 043107, http://dx.doi.org/10.1063/1.3297906

Tettamanzi G; Paul A; Lansbergen G; Verduijn J; Lee S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Thermionic emission as a tool to study transport in undoped nFinFETs', IEEE Electron Device Letters, 31, pp. 150 - 152, http://dx.doi.org/10.1109/LED.2009.2036134

Lansbergen G; Tettamanzi G; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2010, 'Tunable Kondo effect in a single donor atom', Nano Letters, 10, pp. 455 - 460, http://dx.doi.org/10.1021/nl9031132

Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; van den Brink J, 2009, 'Evidence for the formation of a Mott state in potassium-intercalated pentacene', Physical Review - Section B - Condensed Matter, 79, pp. 125116-1 - 125116-8, http://dx.doi.org/10.1103/PhysRevB.79.125116

Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg L, 2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, 80, pp. 155301-1 - 155301-5, http://dx.doi.org/10.1103/PhysRevB.80.155301

Rahman R; Lansbergen G; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg L, 2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314

Klein M; Lansbergen G; Mol JA; Rogge S; Levine RD; Remacle F, 2009, 'Reconfigurable Logic Devices on a Single Dopant Atom—Operation up to a Full Adder by Using Electrical Spectroscopy', Chemphyschem, 10, pp. 162 - 173, http://dx.doi.org/10.1002/cphc.200800568

Lansbergen G; Rahman R; Wellard C; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, 1067, pp. 12 - 17, http://dx.doi.org/10.1557/proc-1067-b03-07

Lansbergen GP; Rahman R; Wellard CJ; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, 1117, pp. 1 - 6, http://dx.doi.org/10.1557/proc-1117-j01-03

Nguyen MH; Rogge S; Caro J; van der Drift E; Salemink H, 2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', Optics InfoBase Conference Papers

Lansbergen G; Rahman R; Wellard CJ; Woo I; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994

Caro J; Roeling E; Rong B; Nguyen HM; Van der drift EWJM; Rogge S; Karouta F; Van der heijden RW; Salemink HWM, 2008, 'Transmission measurement of the photonic band gap of GaN photonic crystal slabs', Applied Physics Letters, 93, pp. 051117-1 - 051117-3, http://dx.doi.org/10.1063/1.2967744

Snijders P; Moon E; Gonzalez C; Rogge S; Ortega J; Flores F; Weitering H, 2007, 'Controlled self-organization of atom vacancies in monatomic gallium layers', Physical Review Letters, 99, pp. 116102-1 - 116102-4, http://dx.doi.org/10.1103/PhysRevLett.99.116102

Sellier H; Lansbergen G; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2007, 'Subthreshold channels at the edges of nanoscale triple-gate silicon transistors', Applied Physics Letters, 90, pp. 073502-1 - 073502-3, http://dx.doi.org/10.1063/1.2476343

Klein M; Rogge S; Remacle F; Levine RD, 2007, 'Transcending binary logic by gating three coupled quantum dots', Nano Letters, 7, pp. 2795 - 2799, http://dx.doi.org/10.1021/nl071376e

Lansbergen GP; Sellier H; Collaert N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 351 - 354, http://dx.doi.org/10.1109/ICONN.2006.340624

Sellier H; Lansbergen GP; Caro J; Rogge S; Collaert N; Ferain I; Jurczak M; Biesemans S, 2006, 'Transport spectroscopy of a single dopant in a gated silicon nanowire', Physical Review Letters, 97, http://dx.doi.org/10.1103/PhysRevLett.97.206805

Snijders PC; Rogge S; Weitering HH, 2006, 'Density waves in atomic necklaces', Europhysics News, 37, pp. 27 - 30, http://dx.doi.org/10.1051/epn:2006506

Morpurgo A; Craciun M; Rogge S; Iwasa Y, 2006, 'Alkali-doped Metal-phthalocyanines: Electronic Properties and Structure', ECS Meeting Abstracts, MA2005-01, pp. 922 - 922, http://dx.doi.org/10.1149/ma2005-01/25/922

Craciun MF; Rogge S; den Boer M-JL; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Inside Front Cover: Electronic Transport through Electron-Doped Metal Phthalocyanine Materials (Adv. Mater. 3/2006)', Advanced Materials, 18, pp. NA - NA, http://dx.doi.org/10.1002/adma.200690014

Snijders P; Rogge S; Weitering H, 2006, 'Competing periodicities in fractionally filled one-dimensional bands', Physical Review Letters, 96, pp. 076801-1 - 076801-4, http://dx.doi.org/10.1103/PhysRevLett.96.076801

Craciun MF; Rogge S; den Boer M-JL; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, 'Electronic Transport through Electron-Doped Metal Phthalocyanine Materials', Advanced Materials, 18, pp. 320 - 324, http://dx.doi.org/10.1002/adma.200501268

Margadonna S; Prassides K; Iwasa Y; Taguchi Y; Craciun MF; Rogge S; Morpurgo AF, 2006, 'Potassium Phthalocyanine, KPc: One-Dimensional Molecular Stacks Bridged by K+ Ions', Inorganic Chemistry, 45, pp. 10472 - 10478, http://dx.doi.org/10.1021/ic060727

de Boer R; Stassen A; Craciun MF; Mulder C; Molinari A; Rogge S; Morpurgo AF, 2005, 'Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors', Applied Physics Letters, 86, pp. 262109-1 - 262109-3, http://dx.doi.org/10.1063/1.1984093

Craciun MF; Rogge S; Morpurgo AF, 2005, 'Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped metal-phthalocyanine compounds', Journal of the American Chemical Society, 127, pp. 12210 - 12211, http://dx.doi.org/10.1021/ja054468j

Rogge S; Snijders P; Gonzalez C; Paul S; Ortega J; Flores F; Weitering H, 2005, 'Ga-induced atom wire formation and passivation of stepped Si(112)', Physical Review - Section B - Condensed Matter, 72, pp. 125343-1 - 125343-12, http://dx.doi.org/10.1103/PhysRevB.72.125343

Craciun MF; Rogge S; den Boer M-JL; Klapwijk T; Morpurgo AF, 2004, 'Electron transport and tunnelling spectroscopy in alkali doped metal phthalocyanines', Journal de Physique Iv, 114, pp. 607 - 610, http://dx.doi.org/10.1051/jp4:2004114144

Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics', Physical Review - Section B - Condensed Matter, 69, pp. 035338-1 - 035338-5, http://dx.doi.org/10.1103/PhysRevB.69.035338

Caro J; Vink I; Smit G; Rogge S; Klapwijk T; Loo R; Caymax M, 2004, 'Direct observation by resonant tunneling of the B+ level in a delta-doped silicon barrier', Physical Review - Section B - Condensed Matter, 69, pp. 125324-1 - 125324-5, http://dx.doi.org/10.1103/PhysRevB.69.125324

Gonzalez C; Snijders P; Ortega J; Perez R; Flores F; Rogge S; Weitering H, 2004, 'Formation of atom wires on vicinal silicon', Physical Review Letters, 93, pp. 126106-1 - 126106-4, http://dx.doi.org/10.1103/PhysRevLett.93.126106

Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Group-theoretical analysis of double acceptors in a magnetic field: Identification of the Si : B+ ground state', Physical Review - Section B - Condensed Matter, 69, pp. 085211-1 - 085211-7, http://dx.doi.org/10.1103/PhysRevB.69.085211

Smit G; Rogge S; Caro J; Klapwijk T, 2004, 'Stark effect in shallow impurities in Si', Physical Review - Section B - Condensed Matter, 70, pp. 035206-1 - 035206-10, http://dx.doi.org/10.1103/PhysRevB.70.035206

Rogge S; Durkut M; Klapwijk TM, 2003, 'Single domain transport measurements of C-60 films', PHYSICAL REVIEW B, 67, http://dx.doi.org/10.1103/PhysRevB67.033410

Smit G; Rogge S; Caro J; Klapwijk T, 2003, 'Gate-induced ionization of single dopant atoms', Physical Review - Section B - Condensed Matter, 68, pp. 193302-1 - 193302-4, http://dx.doi.org/10.1103/PhysRevB.68.193302

Snijders PC, 2003, 'New Structural Model of the Si(112)6 × 1-Ga Interface', AIP Conference Proceedings, http://dx.doi.org/10.1063/1.1639773

Craciun MF, 2003, 'Scanning Tunnelling Microscopy and Spectroscopy on Alkali Doped Copper Phthalocyanine', AIP Conference Proceedings, http://dx.doi.org/10.1063/1.1639741

Rogge S; Durkut M; Klapwijk T, 2003, 'Single domain transport measurements of C-60 films', Physical Review - Section B - Condensed Matter, 67, pp. 033410-1 - 033410-4, http://dx.doi.org/10.1103/PhysRevB.67.033410

Smit G; Rogge S; Klapwijk T, 2002, 'Enhanced tunneling across nanometer-scale metal-semiconductor interfaces', Applied Physics Letters, 80, pp. 2568 - 2570, http://dx.doi.org/10.1063/1.1467980

Smit G; Flokstra M; Rogge S; Klapwijk T, 2002, 'Scaling of micro-fabricated nanometer-sized Schottky diodes', Microelectronic Engineering, 64, pp. 429 - 433, http://dx.doi.org/10.1016/S0167-9317(02)00817-1

Smit G; Rogge S; Klapwijk T, 2002, 'Scaling of nano-Schottky-diodes', Applied Physics Letters, 81, pp. 3852 - 3854, http://dx.doi.org/10.1063/1.1521251

Rogge S; Timmerman R; Scholte P; Geerligs L; Salemink HWM, 2001, 'Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001)', Journal of Vacuum Science and Technology B, 19, pp. 659 - 665, http://dx.doi.org/10.1116/1.1372925

Rogge S; Dunn A; Melin T; Dekker C; Geerligs L, 2000, 'Electrical transport through ultrathin ordered K3C60 films on Si', Carbon, 38, pp. 1647 - 1651, http://dx.doi.org/10.1016/S0008-6223(00)00052-X

Rogge S; Timmerman R; Scholte P; Geerligs L; Salemink HWM, 2000, 'Surface polymerization of epitaxial Sb wires on Si(001)', Physical Review - Section B - Condensed Matter, 62, pp. 15341 - 15344, http://dx.doi.org/10.1103/PhysRevB.62.15341

Wilken HC; Rogge S; Götze O; Werfel T; Zwirner J, 1999, 'Specific detection by flow cytometry of histidine-tagged ligands bound to their receptors using a tag-specific monoclonal antibody', Journal of Immunological Methods, 226, pp. 139 - 145, http://dx.doi.org/10.1016/S0022-1759(99)00064-2

Zuiddam M; Rogge S; Geerligs L; Van der drift EWJM; Ilge B; Palasantzas G, 1998, 'Contact and alignment marker technology for atomic scale device fabrication', Microelectronic Engineering, 42, pp. 567 - 570, http://dx.doi.org/10.1016/S0167-9317(98)00133-6

Rogge S; Natelson D; Osheroff DD, 1997, '3He immersion cell for ultralow temperature study of amorphous solids', Review of Scientific Instruments, 68, pp. 1831 - 1834, http://dx.doi.org/10.1063/1.1148055

Rogge S; Natelson D; Osheroff D, 1997, 'He-3 immersion cell for ultralow temperature study of amorphous solids', Review of Scientific Instruments, 68, pp. 1831 - 1834, http://dx.doi.org/10.1063/1.1148055

Rogge S; Natelson D; Osheroff D, 1997, 'Nonequilibrium and hysteretic low temperature dielectric response to strain in glasses', Journal of Low Temperature Physics, 106, pp. 717 - 725, http://dx.doi.org/10.1007/BF02395933

Rogge S; Natelson D; Tigner B; Osheroff D, 1997, 'Nonlinear dielectric response of glasses at low temperature', Physical Review - Section B - Condensed Matter, 55, pp. 11256 - 11262, http://dx.doi.org/10.1103/PhysRevB.55.11256

Rogge S; Natelson D; Osheroff D, 1996, 'Anomalous behavior of epsilon(omega) in glasses at low temperature due to bias application', Czechoslovak Journal of Physics, 46, pp. 2263 - 2264, http://dx.doi.org/10.1007/BF02571123

Osheroff D; Rogge S; Natelson D, 1996, 'Anomalous dielectric properties of amorphous solids at low temperatures', Physica B - Condensed Matter, 219-220, pp. 243 - 246, http://dx.doi.org/10.1016/0921-4526(95)00708-3

Natelson D; Rogge S; Osheroff D, 1996, 'Dielectric response of two level systems to strain fields at low temperatures', Czechoslovak Journal of Physics, 46, pp. 2265 - 2266, http://dx.doi.org/10.1007/BF02571124

Rogge S; Natelson D; Osheroff D, 1996, 'Evidence for the importance of interactions between active defects in glasses', Physical Review Letters, 76, pp. 3136 - 3139, http://dx.doi.org/10.1103/PhysRevLett.76.3136

Osheroff D; Rogge S; Natelson D, 1996, 'Interactions between active defects in glasses at low temperatures', Czechoslovak Journal of Physics, 46, pp. 3295 - 3302, http://dx.doi.org/10.1007/BF02548143

Salvino D; Rogge S; Tigner B; Osheroff D, 1994, 'Low Temperature ac Dielectric Response of Glasses to High dc Electric Fields', Physical Review Letters, 73, pp. 268 - 271, http://dx.doi.org/10.1103/PhysRevLett.73.268

Rogge S; Salvino D; Tigner B; Osheroff D, 1994, 'Low temperature time and electric field dependence of the dielectric constant in amorphous materials', Physica B - Condensed Matter, 194-196, pp. 407 - 408, http://dx.doi.org/10.1016/0921-4526(94)90533-9

Berkman IR; Lyasota A; de Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu BB; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2022, 'In-Situ Single-Photon Detection of Er Sites in Si', in 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings, Optica Publishing Group, presented at CLEO: QELS_Fundamental Science, http://dx.doi.org/10.1364/cleo_qels.2022.fm5d.5

Culcer D; Salfi J; Rogge S, 2016, 'A single-atom spin-orbit qubit in Si (Conference Presentation)', in Drouhin H-J; Wegrowe J-E; Razeghi M (eds.), Spintronics IX, SPIE, presented at Spintronics IX, 28 August 2016 - 01 September 2016, http://dx.doi.org/10.1117/12.2231059

Rossi A; Tanttu T; Tan KY; Zhao R; Chan KW; Iisakka I; Tettamanzi GC; Rogge S; Dzurak AS; Mottonen M, 2015, 'A silicon single-electron pump with tunable electrostatic confinement', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348563

Van Der Heijden J; Tettamanzi GC; Rogge S, 2015, 'Modeling the pumping of electrons through a single dopant atom in a Si MOSFET', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, pp. 89 - 90, http://dx.doi.org/10.1109/SNW.2014.7348561

Van Der Heijden J; Salfi J; Mol JA; Verduijn J; Tettamanzi GC; Hamilton AR; Collaert N; Rogge S, 2015, 'Probing a single acceptor in a silicon nanotransistor', in 2014 Silicon Nanoelectronics Workshop, SNW 2014, http://dx.doi.org/10.1109/SNW.2014.7348587

Fernandez-Gonzalvo X; Williamson LA; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Upconversion of microwave to optical photons using erbium impurities in a solid', in Conference on Lasers and Electro-Optics Europe - Technical Digest

Rossi A; Tanttu T; Tan KY; Zhao R; Chan KW; Iisakka I; Tettamanzi GC; Rogge S; Möttönen M; Dzurak AS, 2014, 'Effects of electrostatic confinement in a silicon single-electron pump', in CPEM Digest (Conference on Precision Electromagnetic Measurements), pp. 440 - 441, http://dx.doi.org/10.1109/CPEM.2014.6898448

Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2014, 'Frequency up-conversion of microwave photons to the telecommunications band in an Er: YSO crystal', in Optics InfoBase Conference Papers

Tettamanzi GC; Van Der Heijden J; Rogge S, 2014, 'Charge pumping through isolated dopant atoms', in 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, pp. 298 - 300, http://dx.doi.org/10.1109/COMMAD.2014.7038716

Yin CM; Rancic M; Stavrias N; de Boo GG; McCallum JC; Sellars MJ; Rogge S, 2012, 'Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor', in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings, IEEE, Piscataway, NJ, United States, pp. 197 - 198, presented at 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC., 12 December 2012 - 14 December 2012, http://dx.doi.org/10.1109/COMMAD.2012.6472428

Tettamanzi G; Lansbergen G; Verduijn J; Rahman R; Paul A; Lee SH; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, 'Innovative characterization techniques for ultra-scaled FinFETs', in Proceedings of the 10th IEEE International Conference on Nanotechnology, IEEE, Korea, pp. 25 - 30, presented at 10th IEEE International Conference on Nanotechnology joint Symposium with Nano Korea 2010, Korea, 17 August 2010 - 20 August 2010, http://dx.doi.org/10.1109/NANO.2010.5698069

Nguyen HM; Van Der Drift EWJM; Caro J; Rogge S; Salemink HWM, 2010, 'Photonic crystal Mach-Zehnder interferometer operating in the self-collimation mode of light', in Adibi A; Lin SY; Scherer A (eds.), Proceedings of SPIE - The International Society for Optical Engineering, SPIE-INT SOC OPTICAL ENGINEERING, San Francisco, CA, presented at Conference on Photonic and Phononic Crystal Materials and Devices X, San Francisco, CA, 26 - 28 January 2010, http://dx.doi.org/10.1117/12.841701

Lansbergen GP; Rahman R; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2009, '+Level spectrum of single gated as donors', in Caldas MJ; Studart N (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Rio de Janeiro, BRAZIL, pp. 93 - 94, presented at 29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, 27 July - 01 August 2008, http://dx.doi.org/10.1063/1.3295570

Verduijn J; Lansbergen GP; Tettamanzi GC; Rahman R; Biesemans S; Colleart N; Klimeck G; L. Hollenberg LC; Rogge S, 2009, 'From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs', in Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, presented at 2009 International Conference on Solid State Devices and Materials, 06 October 2009 - 09 October 2009, http://dx.doi.org/10.7567/ssdm.2009.k-1-1

Lansbergen GP; Rahman R; Wellard CJ; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Transport-based dopant metrology in advanced FinFETs', in Technical Digest - International Electron Devices Meeting, IEDM, IEEE, San Francisco, CA, pp. 713 - +, presented at IEEE International Electron Devices Meeting, San Francisco, CA, 15 - 17 December 2008, http://dx.doi.org/10.1109/IEDM.2008.4796794

Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 164 - 167, http://dx.doi.org/10.1109/ICONN.2008.4639272

Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/109/1/012003

Nguyen MH; Rogge S; Caro J; van der Drift E; Salemink H, 2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', in Optics InfoBase Conference Papers, http://dx.doi.org/10.1364/ipnra.2008.ima5

Lansbergen GP; Sellier H; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2007, 'One-dimensional sub-threshold channels in nanoscale triple-gate silicon transistors', in Jantsch W; Schaffler F (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Vienna, AUSTRIA, pp. 1397 - 1398, presented at 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, 24 - 28 July 2006, http://dx.doi.org/10.1063/1.2730426

Lansbergen GP; Sellier H; Collaer N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', in 2006 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, VOLS 1 AND 2, IEEE, AUSTRALIA, Brisbane, pp. 675 - +, presented at International Conference on Nanoscience and Nanotechnology, AUSTRALIA, Brisbane, 03 July 2006 - 07 July 2006, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000249051500174

Caro J; Smit GDJ; Sellier H; Loo R; Caymax M; Rogge S; Klapwijk TM, 2005, 'Towards tunneling through a single dopant atom', in Menendez J; VanDeWalle CG (eds.), AIP Conference Proceedings, AMER INST PHYSICS, Flagstaff, AZ, pp. 1587 - 1588, presented at 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, AZ, 26 - 30 July 2004, http://dx.doi.org/10.1063/1.1994725

Bisch C; Rogge S; Mélin T; Janssen GCAM, 2000, 'Selective aluminum CVD on Si(100) from DMAH', in Gonis A; Turchi PE A; Ardell AJ (eds.), Materials Research Society Symposium - Proceedings, MATERIALS RESEARCH SOCIETY, BOSTON, MA, pp. 141 - 146, presented at Symposium on Nucleation and Growth Processes in Materials held at the 1999 MRS Fall Meeting, BOSTON, MA, 29 November - 01 December 1999, http://dx.doi.org/10.1557/PROC-580-141

Palasantzas G; Ilge B; Rogge S; Geerligs LJ, 1999, 'Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface', in Microelectronic Engineering, pp. 133 - 136, http://dx.doi.org/10.1016/S0167-9317(99)00035-0

TIGNER B; SALVINO DJ; ROGGE S; OSHEROFF DD, 1992, 'LOW-TEMPERATURE HISTORY-DEPENDENT DIELECTRIC-CONSTANT IN AMORPHOUS SIO2 AND SIO1.8 FILMS', in Meissner M; Pohl RO (ed.), PHONON SCATTERING IN CONDENSED MATTER VII, SPRINGER-VERLAG BERLIN, NY, CORNELL UNIV, ITHACA, pp. 285 - 286, presented at 7th International Conference on Phonon Scattering in Condensed Matter, NY, CORNELL UNIV, ITHACA, 03 August 1992 - 07 August 1992, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993BB68D00112&

ROGGE SM, 1959, 'SENSITOMETRIC EVALUATION WITH BASIC DATA PROCESSING EQUIPMENT', in PHOTOGRAPHIC SCIENCE AND ENGINEERING, I S & T - SOC IMAGING SCIENCE TECHNOLOGY, pp. 250 - 250, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1959XG21500026

Simmons M; Hollenberg L; Rogge S; Hile S; House M; Fuechsle M; Peretz E; Hill C, 2021, Advanced processing apparatus, Patent No. Australian 2021 pat no.2015252051

Simmons M; Hollenberg L; Hill C; Peretz E; Hile S; Fuechsle M; Rogge S, 2019, A Quantum Processor, Patent No. Australia patent no. 2015252050; Switzerland patent no. 3016034; Germany patent no. 602015048909.8; Spain patent no. E15192761; France patent no. 3016034; United Kingdom patent no. 3016034; Ireland patent no. 3016034; Netherlands patent no. 3016034, https://worldwide.espacenet.com/publicationDetails/biblio?II=1&ND=3&adjacent=true&locale=en_EP&FT=D&date=20160519&CC=AU&NR=2015252050A1&KC=A1

Simmons M; Hollenberg L; Rogge S; Hile S; House M; Fuechsle M; Peretz E; Hill C, 2019, Apparatus and method for quantum processing, Patent No. 10229365, http://patft.uspto.gov/netacgi/nph-Parser

Mol J; Rogge S; Salfi J, 2017, Quantum computing with acceptor-based qubits, Australia, Patent No. 2014234949, https://worldwide.espacenet.com/publicationDetails/biblio?CC=AU&NR=2014234949B2&KC=B2&FT=D#

De Boo G; Mccallum J; Rancic M; Rogge S; Sellars M; Stavrias N; Yin C, 2017, Optical addressing of individual targets in solids, Patent No. 2013360022-B2, http://pericles.ipaustralia.gov.au/ols/auspat/pdfSource.do

Rogge S; Sellars MJ; Yin C; McCallum JC; De Boo GG; Rancic M; Stavrias N, 2014, Optical addressing of individual targets in solids, Patent No. WO/2014/089621, Patent Agent:FB RICE & CO, http://patentscope.wipo.int/search/en/WO2014089621

Zhang Y; Fan W; Yang J; Guan H; Zhang Q; Qin X; Duan C; de Boo GG; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution, , http://dx.doi.org/10.48550/arxiv.2212.00440

Mikhail D; Voisin B; Medar DDS; Buchs G; Rogge S; Rachel S, 2022, Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation, , http://dx.doi.org/10.48550/arxiv.2208.03906

Yang J; Fan W; Zhang Y; Duan C; Boo GGD; Ahlefeldt RL; Longdell JJ; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si, , http://dx.doi.org/10.1103/PhysRevB.105.235306

Yang J; Wang J; Fan W; Zhang Y; Duan C; Hu G; Boo GGD; Johnson BC; McCallum JC; Rogge S; Yin C; Du J, 2022, Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor, , http://dx.doi.org/10.1103/PhysRevApplied.18.034018

Joch DJ; Slussarenko S; Wang Y; Pepper A; Xie S; Xu B-B; Berkman IR; Rogge S; Pryde GJ, 2021, Certified Random Number Generation from Quantum Steering, , http://dx.doi.org/10.48550/arxiv.2111.09506

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2021, Valley population of donor states in highly strained silicon, , http://dx.doi.org/10.48550/arxiv.2109.08540

Hu G; Ahlefeldt RL; de Boo GG; Lyasota A; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2021, Optical and Zeeman spectroscopy of individual Er ion pairs in silicon, , http://dx.doi.org/10.48550/arxiv.2108.07442

Berkman IR; Lyasota A; de Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu B-B; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2021, Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection, , http://dx.doi.org/10.48550/arxiv.2108.07090

Voisin B; Salfi J; Rahman R; Rogge S, 2021, Novel characterisation of dopant-based qubits, , http://dx.doi.org/10.48550/arxiv.2107.00784

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2021, Valley interference and spin exchange at the atomic scale in silicon, , http://dx.doi.org/10.48550/arxiv.2105.10931

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02906

Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02904

Xu B-B; de Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2020, Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators, , http://dx.doi.org/10.48550/arxiv.2011.14792

Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2020, Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation, , http://dx.doi.org/10.48550/arxiv.2009.08594

Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, Scanned single-electron probe inside a silicon electronic device, , http://dx.doi.org/10.48550/arxiv.2001.10225

de Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars M; Rogge S, 2019, High resolution spectroscopy of individual erbium ions in strong magnetic fields, , http://dx.doi.org/10.48550/arxiv.1912.05795

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2019, Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits, , http://dx.doi.org/10.48550/arxiv.1911.11143

Everts J; King GGG; Lambert N; Kocsis S; Rogge S; Longdell JJ, 2019, Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare earth ion spins, , http://dx.doi.org/10.48550/arxiv.1911.11311

Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, Hole-Spin-Echo Envelope Modulations, , http://dx.doi.org/10.48550/arxiv.1906.11953

Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2019, Certification of spin-based quantum simulators, , http://dx.doi.org/10.48550/arxiv.1905.01724

Kobayashi T; Salfi J; van der Heijden J; Chua C; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, Engineering long spin coherence times of spin-orbit systems, , http://dx.doi.org/10.48550/arxiv.1809.10859

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, Single-shot single-gate RF spin readout in silicon, , http://dx.doi.org/10.48550/arxiv.1809.01802

Zhang Q; Hu G; de Boo GG; Rancic M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2018, Single rare-earth ions as atomic-scale probes in ultra-scaled transistors, , http://dx.doi.org/10.48550/arxiv.1803.01573

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, Gigahertz Single-Electron Pumping Mediated by Parasitic States, , http://dx.doi.org/10.48550/arxiv.1803.00791

Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon, , http://dx.doi.org/10.48550/arxiv.1706.09981

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, , http://dx.doi.org/10.48550/arxiv.1706.09261

Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2017, Entanglement control and magic angles for acceptor qubits in Si, , http://dx.doi.org/10.48550/arxiv.1706.08858

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, , http://dx.doi.org/10.48550/arxiv.1703.04175

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Lavieville R; Simmons MY; Rogge S, 2017, Spin-orbit dynamics of single acceptor atoms in silicon, , http://dx.doi.org/10.48550/arxiv.1703.03538

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies, , http://dx.doi.org/10.48550/arxiv.1702.08569

Klymenko MV; Rogge S; Remacle F, 2016, Linear and planar molecules formed by coupled P donors in silicon, , http://dx.doi.org/10.48550/arxiv.1611.07154

Klymenko MV; Rogge S; Remacle F, 2016, Multi-valley envelope function equations and effective potentials for P impurity in silicon, , http://dx.doi.org/10.48550/arxiv.1611.05908

van der Heijden J; Tettamanzi GC; Rogge S, 2016, Dynamics of a single-atom electron pump, , http://dx.doi.org/10.48550/arxiv.1607.08696

Salfi J; Tong M; Rogge S; Culcer D, 2016, Quantum Computing with Acceptor Spins in Silicon, , http://dx.doi.org/10.48550/arxiv.1606.04697

Agundez R; Hill CD; Hollenberg LCL; Rogge S; Blaauboer M, 2016, Superadiabatic quantum state transfer in spin chains, , http://dx.doi.org/10.48550/arxiv.1604.04885

Kobayashi T; van der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot, , http://dx.doi.org/10.48550/arxiv.1604.04020

Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LLC, 2016, Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision, , http://dx.doi.org/10.48550/arxiv.1601.02326

Rahman R; Verduijn J; Wang Y; Yin C; De Boo G; Klimeck G; Rogge S, 2015, Bulk and sub-surface donor bound excitons in silicon under electric fields, , http://dx.doi.org/10.48550/arxiv.1510.00065

Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, Radio frequency reflectometry and charge sensing of a precision placed donor in silicon, , http://dx.doi.org/10.48550/arxiv.1509.03315

Salfi J; Mol JA; Culcer D; Rogge S, 2015, Charge-insensitive single-atom spin-orbit qubit in silicon, , http://dx.doi.org/10.48550/arxiv.1508.04259

Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2015, Donor Wavefunctions in Si Gauged by STM Images, , http://dx.doi.org/10.48550/arxiv.1508.02772

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2015, Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon, , http://dx.doi.org/10.48550/arxiv.1507.06125

Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures, , http://dx.doi.org/10.48550/arxiv.1506.01224

Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon, , http://dx.doi.org/10.48550/arxiv.1504.06370

Urdampilleta M; Chatterjee A; Lo CC; Kobayashi T; Mansir J; Barraud S; Betz AC; Rogge S; Gonzalez-Zalba MF; Morton JJL, 2015, Charge dynamics and spin blockade in a hybrid double quantum dot in silicon, , http://dx.doi.org/10.48550/arxiv.1503.01049

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, , http://dx.doi.org/10.48550/arxiv.1501.05669

Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, Spatially resolved resonant tunneling on single atoms in silicon, , http://dx.doi.org/10.48550/arxiv.1501.05042

Fernandez-Gonzalvo X; Chen Y-H; Yin C; Rogge S; Longdell JJ, 2015, Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal, , http://dx.doi.org/10.48550/arxiv.1501.02014

Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2014, Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory, , http://dx.doi.org/10.48550/arxiv.1410.1951

Agundez R; Salfi J; Rogge S; Blaauboer M, 2014, Local Kondo temperatures in atomic chains, , http://dx.doi.org/10.48550/arxiv.1408.6447

Rossi A; Tanttu T; Tan KY; Iisakka I; Zhao R; Chan KW; Tettamanzi GC; Rogge S; Dzurak AS; Möttönen M, 2014, An accurate single-electron pump based on a highly tunable silicon quantum dot, , http://dx.doi.org/10.48550/arxiv.1406.1267

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, Spatially Resolving Valley Quantum Interference of a Donor in Silicon, , http://dx.doi.org/10.48550/arxiv.1403.4648

Tettamanzi GC; Wacquez R; Rogge S, 2014, Charge Pumping Through a Single Donor Atom, , http://dx.doi.org/10.48550/arxiv.1401.3080

Verduijn J; Vinet M; Rogge S, 2013, Radio-frequency dispersive detection of donor atoms in a field-effect transistor, , http://dx.doi.org/10.48550/arxiv.1312.3363

Yin C; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, Optical addressing of an individual erbium ion in silicon, , http://dx.doi.org/10.48550/arxiv.1304.2117

Mol JA; Salfi J; Miwa JA; Simmons MY; Rogge S, 2013, Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants, , http://dx.doi.org/10.48550/arxiv.1303.2712

Agundez RR; Verduijn J; Rogge S; Blaauboer M, 2013, Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system, , http://dx.doi.org/10.48550/arxiv.1301.4235

Verduijn J; Agundez RR; Blaauboer M; Rogge S, 2012, Non-local coupling of two donor-bound electrons, , http://dx.doi.org/10.48550/arxiv.1209.4726

Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2012, Silicon Quantum Electronics, , http://dx.doi.org/10.48550/arxiv.1206.5202

Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn A; Tettamanzi G; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M, 2012, Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors, , http://dx.doi.org/10.48550/arxiv.1203.4811

Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2011, New tools for the direct characterisation of FinFETs, , http://dx.doi.org/10.48550/arxiv.1111.5655

Lansbergen GP; Rahman R; Tettamanzi GC; Verduijn J; Hollenberg LCL; Klimeck G; Rogge S, 2011, Dopant metrology in advanced FinFETs, , http://dx.doi.org/10.48550/arxiv.1111.4238

Mol JA; van der Heijden J; Verduijn J; Klein M; Remacle F; Rogge S, 2011, Balanced ternary addition using a gated silicon nanowire, , http://dx.doi.org/10.48550/arxiv.1108.5527

Rahman R; Lansbergen GP; Verduijn J; Tettamanzi GC; Park SH; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, , http://dx.doi.org/10.48550/arxiv.1107.2701

Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon, , http://dx.doi.org/10.48550/arxiv.1102.5311

Tettamanzi GC; Verduijn J; Lansbergen GP; Blaauboer M; Calderón MJ; Aguado R; Rogge S, 2011, Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor, , http://dx.doi.org/10.48550/arxiv.1102.2977

Paul A; Tettamanzi GC; Lee S; Mehrotra S; Colleart N; Biesemans S; Rogge S; Klimeck G, 2011, Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs, , http://dx.doi.org/10.48550/arxiv.1102.0140

Tettamanzi GC; Paul A; Lee S; Mehrotra SR; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs, , http://dx.doi.org/10.48550/arxiv.1011.2582

Lansbergen GP; Rahman R; Verduijn J; Tettamanzi GC; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2010, Lifetime enhanced transport in silicon due to spin and valley blockade, , http://dx.doi.org/10.48550/arxiv.1008.1381

Johnson BC; Tettamanzi GC; Alves ADC; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation, , http://dx.doi.org/10.48550/arxiv.1007.5190

Calderon MJ; Verduijn J; Lansbergen GP; Tettamanzi GC; Rogge S; Koiller B, 2010, Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch, , http://dx.doi.org/10.48550/arxiv.1005.1237

Tettamanzi GC; Paul A; Lansbergen GP; Verduijn J; Lee S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, Thermionic Emission as a tool to study transport in undoped nFinFETs, , http://dx.doi.org/10.48550/arxiv.1003.5441

Verduijn J; Tettamanzi GC; Lansbergen GP; Collaert N; Biesemans S; Rogge S, 2009, Coherent transport through a double donor system in silicon, , http://dx.doi.org/10.48550/arxiv.0912.2196

Lansbergen GP; Tettamanzi GC; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2009, Tunable Kondo effect in a single donor atom, , http://dx.doi.org/10.48550/arxiv.0909.5602

Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg LCL, 2009, Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors, , http://dx.doi.org/10.48550/arxiv.0905.3200

Rahman R; Lansbergen GP; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg LCL, 2009, Orbital Stark effect and quantum confinement transition of donors in silicon, , http://dx.doi.org/10.48550/arxiv.0904.4281

Gasseller M; Loo R; Harrison JF; Caymax M; Rogge S; Tessmer SH, 2009, Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon, , http://dx.doi.org/10.48550/arxiv.0904.2617

Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; Brink JVD, 2008, Evidence for the formation of a Mott state in potassium-intercalated pentacene, , http://dx.doi.org/10.48550/arxiv.0802.2813

Sellier H; Lansbergen GP; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2006, Transport spectroscopy of a single dopant in a gated silicon nanowire, , http://dx.doi.org/10.48550/arxiv.cond-mat/0608159

Sellier H; Lansbergen GP; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2006, Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors, , http://dx.doi.org/10.48550/arxiv.cond-mat/0603430

Craciun MF; Rogge S; Morpurgo AF, 2006, Evolution of the conductivity of potassium-doped pentacene films, , http://dx.doi.org/10.48550/arxiv.cond-mat/0603261

Craciun MF; Rogge S; Morpurgo AF, 2006, Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped Metal-Phthalocyanine compounds, , http://dx.doi.org/10.48550/arxiv.cond-mat/0602329

Snijders PC; Rogge S; Weitering HH, 2005, Competing periodicities in fractionally filled one-dimensional bands, , http://dx.doi.org/10.48550/arxiv.cond-mat/0510574

Snijders PC; Gonzalez C; Rogge S; Perez R; Ortega J; Flores F; Weitering HH, 2005, Ga-induced atom wire formation and passivation of stepped Si(112), , http://dx.doi.org/10.48550/arxiv.cond-mat/0505343

de Boer RWI; Stassen AF; Craciun MF; Mulder CL; Molinari A; Rogge S; Morpurgo AF, 2005, Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors, , http://dx.doi.org/10.48550/arxiv.cond-mat/0503282

Gonzalez C; Snijders PC; Ortega J; Perez R; Flores F; Rogge S; Weitering HH, 2004, Formation of atom wires on vicinal silicon, , http://dx.doi.org/10.48550/arxiv.cond-mat/0404285

Craciun MF; Rogge S; Boer MJLD; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2004, Electronic transport through electron-doped Metal-Phthalocyanine Materials, , http://dx.doi.org/10.48550/arxiv.cond-mat/0401036

Caro J; Vink ID; Smit GDJ; Rogge S; Klapwijk TM, 2003, Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier, , http://dx.doi.org/10.48550/arxiv.cond-mat/0309139

Rogge S; Durkut M; Klapwijk TM, 2002, Single domain transport measurements of C60 films, , http://dx.doi.org/10.48550/arxiv.cond-mat/0206221

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