Silicon CMOS quantum dot qubit device hold immense potential for the realization of full-scale quantum computers. However, to reach full potential, quantum processors need to scale from their current size of tens of quantum bits (qubits) to thousands and even millions of qubits. The fabrication and characterization efforts become enormously exhausting as we scale-up to realize a universal quantum processor. Therefore, it is useful to build a silicon quantum dot device simulator to feedback on the actual device (digital clone) characteristic and assist in auto-tuning and machine learning projects. The simulator can also be used for educational purposes.
School
Electrical Engineering and Telecommunications
Research Area
Quantum engineering | Quantum computing
- Research environment
- Expected outcomes
- Supervisory team
- Reference material/links
- The research group is led by Prof. Andrew Dzurak with a dynamic team members of research staff and students. The group is also closely affiliated to a start-up company, Diraq with plenty of support and interaction in both academic and industry aspects.
The student will build a simulator for single to multi quantum dot in silicon for quantum computing application. Background knowledge in programming languages, in particular Python, will be useful to lead this project. This project builds upon existing simulator with macros and graphical user interfaces which produced single sweep of single-electron transistor turn-on characteristic, coulomb oscillations and double quantum dot charge stability diagram. The student will expand and add features to the simulator such as 2-dimensional sweep and increase in number of quantum dots. The simulator should be able to cater for parametrized qubit design to study effect of different architecture. In later stages, the simulator will be used to generate training data for a customized quantum dot machine learning model.
- Angus et al "Gate-Defined Quantum Dots in Intrinsic Silicon" Nano Lett. 2007, 7, 7, 2051 - 2055 https://pubs.acs.org/doi/abs/10.1021/nl070949k
- Lim et al "Observation of the single-electron regime in a highly tunable silicon quantum dot" Appl. Phys. Lett. 95, 242102 2009 https://aip.scitation.org/doi/10.1063/1.3272858
- Yang et al “Generic Hubbard model description of semiconductor quantum-dot spin qubits” Phys. Rev. B 83, 161301(R) 2011 Generic Hubbard model description of semiconductor quantum-dot spin qubits | Phys. Rev. B
- van der Wiel et al “Electron transport through double quantum dots” Rev. Mod. Phys. 75, 1 2002 Electron transport through double quantum dots | Rev. Mod. Phys.